摘要:
I/O delay testing for devices utilizing on-chip delay generation. An embodiment of an apparatus includes I/O buffer circuits, at least one of the buffer circuits including a transmitter and a receiver that are coupled for loop-back testing of the buffer circuit; and testing circuitry for the loop-back testing for the at least one buffer circuit, the loop-back testing including determining whether test data transmitted by the transmitter of the buffer circuit matches test data received by the respective coupled receiver. The testing circuitry includes a delay line to provide delay values from a transmit clock signal for the testing of the at least one buffer circuit, a counter to provide a count to choose one of the plurality of delay values, and test logic for the loop-back testing.
摘要:
A boundary scan chain for stacked memory. An embodiment of a memory device includes a system element and a memory stack including one or more memory die layers, each memory die layer including input-output (I/O) cells and a boundary scan chain for the I/O cells. A boundary scan chain of a memory die layer includes a scan chain portion for each of the I/O cells, the scan chain portion for an I/O cell including a first scan logic multiplexer a scan logic latch, an input of the scan logic latch being coupled with an output of the first scan logic multiplexer, and a decoder to provide command signals to the boundary scan chain.
摘要:
Embodiments provide access to a memory over a high speed serial link at slower speeds than the high speed serial links regular operation. An embodiment may comprise a memory apparatus with a differential receiver coupled to a protocol recognition circuit, a low speed receiving circuit that has a first receiver coupled with a first input of the differential receiver and a second receiver coupled with a second input of the differential receiver, wherein the low speed receiving circuit is coupled with the protocol recognition circuit, allowing the first and second receivers to access the protocol recognition block at a different frequency than the differential receiver.
摘要:
An apparatus for data storage is presented. In one embodiment, the apparatus includes a phase change memory device comprising phase change memory storage elements. The apparatus further includes control logic to control two or more set pipelines to serve memory requests in a staggered manner, such that set operations of the memory requests begin at different times.
摘要:
Embodiments provide access to a memory over a high speed serial link at slower speeds than the high speed serial links regular operation. An embodiment may comprise a memory apparatus with a differential receiver coupled to a protocol recognition circuit, a low speed receiving circuit that has a first receiver coupled with a first input of the differential receiver and a second receiver coupled with a second input of the differential receiver, wherein the low speed receiving circuit is coupled with the protocol recognition circuit, allowing the first and second receivers to access the protocol recognition block at a different frequency than the differential receiver.
摘要:
An apparatus, system, and method provide for on chip redundancy repair for stacked memory devices. A memory device may include a memory stack including one or more layers of dynamic random-access memory (DRAM) and a system element coupled with the memory stack, the system element including a memory controller for control of the memory stack, and repair logic that is coupled with the memory controller. The repair logic is to hold repair addresses that are identified as failing addresses for defective areas of the memory stack, with the repair logic to receive a memory operation request and implement redundancy repair for an operation address for the request using a repair logic memory to store the repair addresses and data for the repair addresses.
摘要:
An apparatus for data storage is presented. In one embodiment, the apparatus includes a phase change memory device comprising phase change memory storage elements. The apparatus further includes control logic to control two or more set pipelines to serve memory requests in a staggered manner, such that set operations of the memory requests begin at different times.
摘要:
Techniques and mechanisms for evaluating I/O buffer circuits. In an embodiment, test rounds are performed for a device including the I/O buffer circuits, each of the test rounds comprising a respective loop-back test for each of the I/O buffer circuits. Each of the test rounds corresponds to a different respective delay between a transmit clock signal and a receive clock signal. In another embodiment, a first test round indicates a failure condition for at least one I/O buffer circuit and a second test round indicates the failure condition for each of the I/O buffer circuits. Evaluation of the I/O buffer circuits determines whether the device satisfies a test condition, where the determining is based on a difference between the delay corresponding to the first test round and the delay corresponding to the second test round.
摘要:
Techniques and mechanisms for evaluating I/O buffer circuits. In an embodiment, test rounds are performed for a device including the I/O buffer circuits, each of the test rounds comprising a respective loop-back test for each of the I/O buffer circuits. Each of the test rounds corresponds to a different respective delay between a transmit clock signal and a receive clock signal. In another embodiment, a first test round indicates a failure condition for at least one I/O buffer circuit and a second test round indicates the failure condition for each of the I/O buffer circuits. Evaluation of the I/O buffer circuits determines whether the device satisfies a test condition, where the determining is based on a difference between the delay corresponding to the first test round and the delay corresponding to the second test round.
摘要:
A nonvolatile storage or memory device is accessed over a memory bus. The memory bus has an electrical interface typically used for volatile memory devices. A controller coupled to the bus sends synchronous data access commands to the nonvolatile memory device, and reads the response from the device bus based on an expected timing of a reply from the nonvolatile memory device. The controller determines the expected timing based on when the command was sent, and characteristics of the nonvolatile memory device. The controller may not need all the electrical signal lines available on the memory bus, and could issue data access commands to different groups of nonvolatile memory devices over different groups of electrical signal lines. The memory bus may be available and configured for either use with a memory controller and volatile memory devices, or a storage controller and nonvolatile memory devices.