公开(公告)号：US06845778B2

公开(公告)日：2005-01-25

申请号：US10112639

申请日：2002-03-29

申请人： John M. Boyd ,  Katrina Mikhaylich

发明人： John M. Boyd ,  Katrina Mikhaylich

IPC分类号： H01L21/304 ,  B08B3/02 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00 ,  H01L21/306 ,  B08B7/04

CPC分类号： H01L21/02052 ,  B08B3/02 ,  B08B3/10 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/67051 ,  Y10S134/902

摘要： An apparatus for cleaning a semiconductor substrate is provided. In embodiment of the present invention, a megasonic cleaner capable of providing localized heating is provided. The megasonic cleaner includes a transducer and a resonator. The resonator is configured to propagate energy from the transducer. The resonator has a first and a second end, the first end is operatively coupled to the transducer and the second end is configured to provide localized heating while propagating the energy from the transducer. A system for cleaning a semiconductor substrate through megasonic cleaning and a method for cleaning a semiconductor substrate is also provided.

摘要翻译： 提供了一种用于清洁半导体衬底的设备。 在本发明的实施例中，提供了能够提供局部加热的兆声波清洗器。 兆声波清洗器包括换能器和谐振器。 谐振器被配置成传播来自换能器的能量。 谐振器具有第一端和第二端，第一端可操作地耦合到换能器，并且第二端构造成在传播来自换能器的能量的同时提供局部加热。 还提供了一种通过兆声波清洗来清洁半导体衬底的系统和用于清洁半导体衬底的方法。

公开(公告)号：US06752703B2

公开(公告)日：2004-06-22

申请号：US10029515

申请日：2001-12-21

申请人： John M. Boyd ,  Miguel A. Saldana ,  Damon Vincent Williams

发明人： John M. Boyd ,  Miguel A. Saldana ,  Damon Vincent Williams

IPC分类号： B24B722

CPC分类号： B24B37/27 ,  B24B37/30

摘要： CMP systems and methods provide necessary vacuum and pressure to be applied from a vacuum chuck through a carrier film to a wafer without interfering with desired wafer planarization during CMP operations. Prior low polish rate-areas on the wafer may be eliminated from an exposed surface of the wafer by structure to uniformly compress the carrier film in response to a force from the wafer on the carrier film during the CMP operations. A distance between, and diameters of, adjacent holes of the carrier film are reduced, and the locations of the holes are in an array to coordinate with passageways through the vacuum chuck. The structure significantly reduces a maximum value of compression of the carrier film during CMP operations. As a result, during the CMP operations the wafer does not deform in a manner that exactly matches the compression of the carrier film, but remains essentially flat.

摘要翻译： CMP系统和方法提供了从真空卡盘通过载体膜施加到晶片的必要的真空和压力，而不会在CMP操作期间干扰期望的晶片平面化。 可以通过结构从晶片的暴露表面去除先前的晶圆上的低抛光率区域，以在CMP操作期间响应于载体膜上的晶片的力均匀地压缩载体膜。 载体膜的相邻孔之间的距离和直径减小，并且孔的位置处于与通过真空卡盘的通道协调的阵列中。 该结构在CMP操作期间显着降低了载体膜的压缩的最大值。 结果，在CMP操作期间，晶片不会以与载体膜的压缩精确匹配的方式变形，而是保持基本上平坦。

公开(公告)号：US06702202B1

公开(公告)日：2004-03-09

申请号：US10186941

申请日：2002-06-28

申请人： John M. Boyd ,  Carl Woods

发明人： John M. Boyd ,  Carl Woods

IPC分类号： B05B300

CPC分类号： H01L21/67051 ,  B08B3/022 ,  Y10S134/902

摘要： A fluid delivery device for delivering fluid to the backside of a substrate while minimizing waste. The device includes an inner cylindrical tube having a top opening and a bottom opening. An upper cap overlying a top portion of the inner cylindrical tube is included. The upper cap is moveably disposed over the inner cylindrical tube. The upper cap includes a top with at least one hole defined therein. The top includes a sidewall extending therefrom. A system and a method for reducing an amount of a cleaning chemistry applied to a backside of a wafer during a cleaning operation are also provided.

摘要翻译： 流体输送装置，用于将流体输送到衬底的背面，同时最小化废物。 该装置包括具有顶部开口和底部开口的内部圆柱形管。 包括覆盖内圆柱形管的顶部的上盖。 上盖可移动地设置在内圆柱形管上。 上盖包括其中限定有至少一个孔的顶部。 顶部包括从其延伸的侧壁。 还提供了一种用于在清洁操作期间减少施加到晶​​片背面的清洁化学品的量的系统和方法。

公开(公告)号：US06547651B1

公开(公告)日：2003-04-15

申请号：US09709972

申请日：2000-11-10

申请人： John M. Boyd ,  Michael S. Lacy ,  David G. Halley

发明人： John M. Boyd ,  Michael S. Lacy ,  David G. Halley

IPC分类号： B24B722

CPC分类号： B24B37/245 ,  B24B37/20 ,  B24B37/26 ,  B24D9/085

摘要： Specific embodiments of the present invention provide a chemical-mechanical planarization apparatus for planarizing an object comprising a platen assembly for holding an object having a target surface to be planarized. A polishing pad is configured to contact the object during planarization with a contact portion over a contact area which is smaller in area than the target surface. The polishing pad has a noncontact portion which is not in contact with the object during planarization. The polishing pad is movable relative to the object to move the noncontact portion in contact with the object and move the contact portion out of contact with the object. A conditioner is configured to condition the noncontact portion of the polishing pad. The noncontact portion of the polishing pad may be conditioned continuously during planarization of the object by the polishing pad. An abrasive may be delivered to the contact area between the polishing pad and the target surface of the object.

公开(公告)号：US06435952B1

公开(公告)日：2002-08-20

申请号：US09608522

申请日：2000-06-30

申请人： John M. Boyd ,  Katrina Mikhaylich ,  Mike Ravkin

发明人： John M. Boyd ,  Katrina Mikhaylich ,  Mike Ravkin

IPC分类号： B24B5300

CPC分类号： B24B53/017 ,  B24B21/04 ,  B24B53/12

摘要： A method and apparatus for qualifying a polishing pad used in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes at least one qualifying member including at least one collimated hole structure, wherein the collimated hole structure forms multiple channels within the qualifying member. The method includes providing at least one qualifying member formed with at least one capillary tube array, wherein the capillary tube array forms multiple channels within the qualifying member, pressing the qualifying member against the polishing pad, and moving the qualifying member along the polishing pad along a trajectory to simulate the polishing of a semiconductor wafer.

公开(公告)号：US06358118B1

公开(公告)日：2002-03-19

申请号：US09608462

申请日：2000-06-30

申请人： Robert G. Boehm ,  John M. Boyd

发明人： Robert G. Boehm ,  John M. Boyd

IPC分类号： B24B4916

CPC分类号： B24B37/20 ,  B24B1/005 ,  B24B49/16 ,  B24D9/08

摘要： A polishing tool includes a polish pad, a bladder, a fluid, and a flux guide. A bladder containing fluid supports the polishing pad that is positioned adjacent to a surface to be polished. Flux guides positioned along a portion of the bladder direct a field or a magnetic flux to selected locations of the bladder. The method of polishing a surface adjusts the field or the magnetic flux emanating from the flux guides which changes the mechanical properties of the fluid. By adjusting the magnitude of the field or level of magnetic flux flowing from the flux guides independent pressure adjustments occur at selected locations of the bladder that control the polishing profile of the surface.

摘要翻译： 抛光工具包括抛光垫，气囊，流体和通量引导件。 含膀胱的流体支撑抛光垫，该抛光垫邻近被抛光表面定位。 沿着膀胱的一部分定位的通量引导件将场或磁通量引导到膀胱的选定位置。 抛光表面的方法调整从引导件发出的磁场或磁通，其改变流体的机械性能。 通过调节磁通量的磁场强度或磁通量的水平，独立的压力调节发生在控制表面的抛光轮廓的气囊的选定位置处。

公开(公告)号：US5614750A

公开(公告)日：1997-03-25

申请号：US496650

申请日：1995-06-29

申请人： Joseph P. Ellul ,  John M. Boyd

发明人： Joseph P. Ellul ,  John M. Boyd

IPC分类号： H01L21/8249 ,  H01L27/06 ,  H01L29/417 ,  H01L29/76 ,  H01L27/082 ,  H01L27/102 ,  H01L29/94

CPC分类号： H01L21/743 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/41708

摘要： A buried layer contact for a integrated circuit structure is provided, with particular application for a contact for a buried collector of a bipolar transistor. The buried layer contact takes the form of a sinker comprising a fully recessed trench isolated structure having dielectric lined sidewalls and filled with conductive material, e.g. doped polysilicon which contacts the buried layer. The trench isolated contact is more compact than a conventional diffused sinker structure, and thus beneficially allows for reduced transistor area. Advantageously, a reduced area sinker reduces the parasitic capacitance and power dissipation. In a practical implementation, the structure provides for an annular collector contact structure to reduce collector resistance.

摘要翻译： 提供了一种用于集成电路结构的掩埋层接触，特别适用于双极晶体管的埋地集电极的接触。 掩埋层接触采取沉降片的形式，其包括完全凹陷的沟槽隔离结构，其具有电介质衬里侧壁并填充有导电材料，例如， 接触埋层的掺杂多晶硅。 沟槽隔离触点比常规扩散沉降片结构更紧凑，因此有利地减少了晶体管面积。 有利的是，减小的面积沉降片减小了寄生电容和功耗。 在实际实施中，该结构提供环形集电极接触结构以减小集电极电阻。

公开(公告)号：US08485120B2

公开(公告)日：2013-07-16

申请号：US11735987

申请日：2007-04-16

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

IPC分类号： B05C11/00 ,  B05D1/28

CPC分类号： H01L21/02104 ,  C23C18/1619 ,  H01L21/67005 ,  H01L21/6715

摘要： A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.

摘要翻译： 半导体晶片化学镀设备包括压板和流体碗。 压板具有限定为支撑晶片的顶表面和从顶表面的周边向下延伸到压板的下表面的外表面。 流体碗具有由内表面限定的内部容积，以便在内部容积内容纳压板和要支撑在其上的晶片。 密封件设置在流体碗的内表面周围，以便当接合在流体碗的内表面和压板的外表面之间时形成液密屏障。 多个流体分配喷嘴被定位成在密封件上方的流体碗内分配电镀溶液，以便在压板上升起并流动，从而当存在于压板上时流过晶片。

公开(公告)号：US08403727B1

公开(公告)日：2013-03-26

申请号：US10816417

申请日：2004-03-31

申请人： Fred C. Redeker ,  John M. Boyd ,  Yezdi Dordi ,  Sabir A. Majumder ,  Simon McClatchie

发明人： Fred C. Redeker ,  John M. Boyd ,  Yezdi Dordi ,  Sabir A. Majumder ,  Simon McClatchie

IPC分类号： B24B1/00 ,  B24B7/19 ,  B24B7/30

CPC分类号： H01L21/32115 ,  B24B37/042 ,  B24B37/107 ,  B24B37/11 ,  B24D7/06 ,  H01L21/68785

摘要： A method for producing a normalized surface on a substrate for a chemical mechanical planarization process is provided. The method initiates with grinding a surface of the substrate with a first surface associated with a first planarization length. The method includes planarizing the surface of the substrate with a second surface associated with a second planarization length. Here, the second planarization length being less than the first planarization length. A system for processing a semiconductor substrate is also provided.

摘要翻译： 提供了一种用于在化学机械平面化处理用基板上制造标准化表面的方法。 该方法通过用与第一平坦化长度相关联的第一表面研磨衬底的表面来启动。 该方法包括用与第二平坦化长度相关联的第二表面平坦化衬底的表面。 这里，第二平坦化长度小于第一平坦化长度。 还提供了一种用于处理半导体衬底的系统。

公开(公告)号：US20110011335A1

公开(公告)日：2011-01-20

申请号：US12891639

申请日：2010-09-27

申请人： William Thie ,  John M. Boyd ,  Yezdi Dordi ,  Fritz C. Redeker

发明人： William Thie ,  John M. Boyd ,  Yezdi Dordi ,  Fritz C. Redeker

IPC分类号： C23C18/16 ,  C23C18/52 ,  C23C18/32 ,  C23C18/34 ,  B05C5/00 ,  H01L21/445

CPC分类号： C23C18/1617 ,  C23C18/163 ,  C23C18/1678 ,  H01L21/67092

摘要： An electroless plating system is provided. The system includes a first vacuum chuck supporting a first wafer and a second vacuum chuck supporting a second wafer such that a top surface of the second wafer is opposing a top surface of the first wafer. The system also includes a fluid delivery system configured to deliver a plating solution to the top surface of the first wafer, wherein in response to delivery of the plating solution, the top surface of the second wafer is brought proximate to the top surface of the first wafer so that the plating solution contacts both top surfaces. A method for applying an electroless plating solution to a substrate is also provided.

摘要翻译： 提供无电镀系统。 该系统包括支撑第一晶片的第一真空卡盘和支撑第二晶片的第二真空卡盘，使得第二晶片的顶表面与第一晶片的顶表面相对。 该系统还包括配置成将电镀溶液输送到第一晶片的顶表面的流体输送系统，其中响应于电镀溶液的输送，第二晶片的顶表面靠近第一晶片的顶表面 使得电镀溶液接触两个顶表面。 还提供了一种将无电镀液施加到基底上的方法。