公开(公告)号：US20060087199A1

公开(公告)日：2006-04-27

申请号：US10971169

申请日：2004-10-22

Applicant: John Larson ,  Stephen Gilbert ,  Ken Nishimura

Inventor： John Larson ,  Stephen Gilbert ,  Ken Nishimura

IPC: H01L41/107

CPC classification number: H02M3/24 ,  H01L41/107

Abstract: The piezoelectric isolating transformer is characterized by an operating frequency range and includes a resonant structure having at least one mechanical resonance in the operating frequency range. The resonant structure has an insulating substrate, a first electro-acoustic transducer and a second electro-acoustic transducer. The substrate has a first major surface and a second major surface opposite the first major surface. The first electro-acoustic transducer is mechanically coupled to the first major surface. The second electro-acoustic transducer is mechanically coupled to the second major surface. One of the transducers is operable to convert input electrical power in the operating frequency range to acoustic energy that excites mechanical vibration in the resonant structure. The other of the transducers converts the mechanical vibration to output electrical power.

Abstract translation: 压电隔离变压器的特征在于工作频率范围，并且包括在工作频率范围内具有至少一个机械谐振的谐振结构。 谐振结构具有绝缘基板，第一电声换能器和第二电声换能器。 衬底具有与第一主表面相对的第一主表面和第二主表面。 第一电声换能器机械耦合到第一主表面。 第二电声换能器机械耦合到第二主表面。 换能器中的一个可操作以将工作频率范围内的输入电力转换成激发谐振结构中的机械振动的声能。 另一个换能器将机械振动转换成输出电力。

公开(公告)号：US20050287730A1

公开(公告)日：2005-12-29

申请号：US11215499

申请日：2005-08-30

Applicant: John Snyder ,  John Larson

Inventor： John Snyder ,  John Larson

IPC: H01L27/095 ,  H01L29/51 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/47 ,  H01L29/812 ,  H01L31/07 ,  H01L31/108

CPC classification number: H01L29/7839 ,  H01L27/095 ,  H01L29/517

Abstract: A CMOS device and method of fabrication are disclosed. The present invention utilizes Schottky barrier contacts for source and/or drain contact fabrication within the context of a CMOS device and CMOS integrated circuits, to eliminate the requirement for halo/pocket implants, shallow source/drain extensions to control short channel effects, well implant steps, and complex device isolation steps. Additionally, the present invention eliminates the parasitic bipolar gain associated with CMOS device operation, reduces manufacturing costs, tightens control of device performance parameters, and provides for superior device characteristics as compared to the prior art. The present invention, in one embodiment, uses a silicide exclusion mask process to form the dual silicide Schottky barrier source and/or drain contact for the complimentary PMOS and NMOS devices forming the CMOS device.

Abstract translation: 公开了CMOS器件和制造方法。 本发明在CMOS器件和CMOS集成电路的上下文中利用肖特基势垒触点来制造源极和/或漏极接触，以消除对光晕/凹穴注入的需求，用于控制短沟道效应的浅源极/漏极扩展，良好注入 步骤和复杂的设备隔离步骤。 此外，本发明消除了与CMOS器件操作相关联的寄生双极增益，降低了制造成本，加强了器件性能参数的控制，并且与现有技术相比提供了优异的器件特性。 在一个实施例中，本发明使用硅化物排除掩模工艺来形成用于形成CMOS器件的互补PMOS和NMOS器件的双硅化物肖特基势垒源和/或漏极接触。

公开(公告)号：US20050118793A1

公开(公告)日：2005-06-02

申请号：US10957913

申请日：2004-10-04

Applicant: John Snyder ,  John Larson

Inventor： John Snyder ,  John Larson

IPC: H01L21/336 ,  H01L29/417 ,  H01L29/78 ,  H01L31/119 ,  H01L21/28 ,  H01L21/44 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

CPC classification number: H01L29/66643 ,  H01L29/41766 ,  H01L29/66636 ,  H01L29/7839

Abstract: A method of fabricating a transistor device for regulating the flow of electric current is provided wherein the device has Schottky-barrier metal source-drain contacts. The method, in one embodiment, utilizes an isotropic etch process prior to the formation of the metal source-drain contacts to provide better control of the Schottky-barrier junction location to a channel region. The improvements from the controllability of the placement of the Schottky-barrier junction enables additional drive current and optimizes device performance, thereby significantly improving manufacturability.

Abstract translation: 提供一种制造用于调节电流流动的晶体管器件的方法，其中器件具有肖特基势垒金属源极 - 漏极触点。 在一个实施例中，该方法在形成金属源极 - 漏极接触之前利用各向同性蚀刻工艺，以提供对沟道区域的肖特基势垒连接位置的更好控制。 从肖特基势垒结的放置的可控制性的改进可以实现额外的驱动电流并优化器件性能，从而显着提高可制造性。

公开(公告)号：US20050110598A1

公开(公告)日：2005-05-26

申请号：US10977398

申请日：2004-10-29

Applicant: John Larson

Inventor： John Larson

IPC: H03H9/02 ,  H03H9/13 ,  H03H9/58 ,  H03H9/60 ,  H03H9/56

CPC classification number: H03H9/605 ,  H03H9/02102 ,  H03H9/132 ,  H03H9/175 ,  H03H9/584 ,  H03H9/587 ,  H03H9/589

Abstract: The temperature-compensated film bulk acoustic resonator (FBAR) device comprises an FBAR stack. The FBAR stack comprises an FBAR and a temperature-compensating element. The FBAR is characterized by a resonant frequency having a temperature coefficient, and comprises opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element has a temperature coefficient on which the temperature coefficient of the resonant frequency depends at least in part. The temperature-compensating element has a temperature coefficient opposite in sign to the temperature coefficient of the piezoelectric element.

Abstract translation: 温度补偿膜体声波谐振器（FBAR）装置包括FBAR堆叠。 FBAR堆叠包括FBAR和温度补偿元件。 FBAR的特征在于具有温度系数的谐振频率，并且包括相对的平面电极和电极之间的压电元件。 压电元件具有温度系数，谐振频率的温度系数至少部分地取决于该温度系数。 温度补偿元件具有与压电元件的温度系数相符的温度系数。

公开(公告)号：US20050104152A1

公开(公告)日：2005-05-19

申请号：US10944627

申请日：2004-09-17

Applicant: John Snyder ,  John Larson

Inventor： John Snyder ,  John Larson

IPC: H01L21/336 ,  H01L21/8238 ,  H01L27/095 ,  H01L29/78 ,  H01L29/76

CPC classification number: H01L29/66643 ,  H01L21/823814 ,  H01L27/095 ,  H01L29/7839

Abstract: A Schottky barrier integrated circuit is disclosed, the circuit having at least one PMOS device or at least one NMOS device, at least one of the PMOS device or NMOS device having metal source-drain contacts forming Schottky barrier or Schottky-like contacts to the semiconductor substrate. The device provides a new distribution of mobile charge carriers in the bulk region of the semiconductor substrate, which improves device and circuit performance by lowering gate capacitance, improving effective carrier mobility {overscore (μ)}, reducing noise, reducing gate insulator leakage, reducing hot carrier effect and improving reliability.

Abstract translation: 公开了一种肖特基势垒集成电路，该电路具有至少一个PMOS器件或至少一个NMOS器件，PMOS器件或NMOS器件中的至少一个具有金属源极 - 漏极接触，形成肖特基势垒或肖特基接触到半导体 基质。 该器件在半导体衬底的主体区域提供了移动电荷载体的新分布，通过降低栅极电容来提高器件和电路性能，提高有效的载流子迁移率（超滤（mu，降低噪声，减少栅极绝缘体泄漏，减少热载流子 效果和可靠性提高。

公开(公告)号：US5501319A

公开(公告)日：1996-03-26

申请号：US263071

申请日：1994-06-21

Applicant: John Larson ,  Jack R. Raum

Inventor： John Larson ,  Jack R. Raum

IPC: B65G17/06 ,  B65G21/18

CPC classification number: B65G21/18 ,  B65G17/064 ,  B65G2201/02 ,  B65G2207/24

Abstract: The present invention provides a conveyor belt for traveling along both straight and laterally curved paths. A plurality of rods extend across the belt and are pivotally connected together by tractive links which are at least longitudinally expandable. The orientation of one edge link is reversed such that the terminal end thereof leads in the direction of travel of the belt in order to prevent damage to the links and/or the cage drive system when the belt is driven by the cage drive in a spiral system.

Abstract translation: 本发明提供一种用于沿直线和横向弯曲路径行进的传送带。 多个杆延伸穿过皮带并且通过至少纵向可伸展的牵引连杆枢转地连接在一起。 一个边缘连杆的方向被反转，使得其末端在带的行进方向上引导，以便当皮带由笼式驱动器以螺旋状驱动时，防止对连杆和/或保持架驱动系统的损坏 系统。

公开(公告)号：US20100276516A1

公开(公告)日：2010-11-04

申请号：US12808540

申请日：2008-12-23

Applicant: John Larson ,  Alan Arthur Burmester

Inventor： John Larson ,  Alan Arthur Burmester

IPC: B05B7/04 ,  B05B1/00 ,  B05B7/28 ,  B05B17/00

CPC classification number: B05B7/0846 ,  B05B7/066 ,  B05B7/0815 ,  B05B7/0869 ,  B05B7/2429 ,  B05B7/2435 ,  B05B7/2472 ,  B05B7/2478 ,  B05B7/2481 ,  B05D1/02 ,  B05D1/34

Abstract: The present invention is directed to a delivery device and a system for introducing the catalyst into the atomized coating composition. This invention is also directed to a system for producing a mixed composition comprising two or more components.

Abstract translation: 本发明涉及一种用于将催化剂引入雾化涂料组合物的输送装置和系统。 本发明还涉及一种用于生产包含两种或多种组分的混合组合物的系统。

公开(公告)号：US20100210291A1

公开(公告)日：2010-08-19

申请号：US12705453

申请日：2010-02-12

Applicant: John Lauer ,  Anthony Riemma ,  John Larson ,  Michael Smyers

Inventor： John Lauer ,  Anthony Riemma ,  John Larson ,  Michael Smyers

IPC: H04W4/12

CPC classification number: H04W4/14 ,  H04L51/04 ,  H04L51/14 ,  H04L51/38

Abstract: A computer readable storage medium includes executable instructions, which when executed by a computer, cause the computer to designate a selected thread identification value from a collection of thread identification values based upon recognition criteria. The selected thread identification value is utilized during bidirectional text messaging between a first user and a second user.

Abstract translation: 计算机可读存储介质包括可执行指令，当由计算机执行时，计算机使得计算机基于识别标准从线程标识值的集合中指定所选择的线程标识值。 所选择的线程标识值在第一用户和第二用户之间的双向文本消息传送期间被使用。

公开(公告)号：US20080079107A1

公开(公告)日：2008-04-03

申请号：US11983859

申请日：2007-11-12

Applicant: John Snyder ,  John Larson

Inventor： John Snyder ,  John Larson

IPC: H01L31/107

CPC classification number: H01L29/0847 ,  H01L21/28194 ,  H01L21/823412 ,  H01L29/105 ,  H01L29/1054 ,  H01L29/47 ,  H01L29/51 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66643 ,  H01L29/7839

Abstract: The present invention is a field effect transistor having a strained semiconductor substrate and Schottky-barrier source and drain electrodes, and a method for making the transistor. The bulk charge carrier transport characteristic of the Schottky barrier field effect transistor minimizes carrier surface scattering, which enables the strained substrate to provide improved power and speed performance characteristics in this device, as compared to conventional devices.

Abstract translation: 本发明是具有应变半导体衬底和肖特基势垒源极和漏极的场效应晶体管及其制造方法。 与传统器件相比，肖特基势垒场效应晶体管的体电荷载流子传输特性使载流子表面散射最小化，这使得应变衬底能够在该器件中提供改进的功率和速度性能特性。

公开(公告)号：US20080042386A1

公开(公告)日：2008-02-21

申请号：US11974556

申请日：2007-10-15

Applicant: John Larson

Inventor： John Larson

IPC: B62B9/00

CPC classification number: A61G5/1059 ,  A61G5/00 ,  A61G5/02 ,  A61G5/10 ,  A61G5/1054 ,  A61G5/1067 ,  A61G5/1075 ,  A61G5/12 ,  A61G5/125 ,  A61G5/14

Abstract: A wheeled work chair has all the attributes and style of an office chair but is equipped with wheelchair-type supporting wheels. The chair is height adjustable with the upper portion of the chair moving relative to the lower portion of the chair. Wheels connected to the upper portion of the chair move with the chair seat as the height of the chair is adjusted. Wheels connected to the lower portion of the chair remain on the ground as the height of the chair is adjusted. A static surface is provided on the arm of a height adjustable chair to support the weight of a user while that chair is being raised.

Abstract translation: 轮式工作椅具有办公椅的所有属性和风格，但配有轮椅式支撑轮。 椅子高度可调节，椅子的上部相对于椅子的下部移动。 连接到椅子上部的轮子随着椅子的高度被调节而与椅子座椅一起移动。 随着椅子的高度被调整，连接到椅子下部的轮子保持在地面上。 在高度可调椅子的臂上设置静态表面，以在椅子被升起的同时支撑使用者的重量。