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公开(公告)号:US20190139873A1
公开(公告)日:2019-05-09
申请号:US16178265
申请日:2018-11-01
Applicant: ROHM CO., LTD.
Inventor: Koshun SAITO
IPC: H01L23/495 , H01L23/31 , H01L21/56 , H01L21/48 , H01L23/00
Abstract: A semiconductor device includes a semiconductor element, leads, and an encapsulation resin covering a portion of each of the leads and the semiconductor element. Each of the leads includes an external connection portion projecting from a side surface of the encapsulation resin. The external connection portion of at least one of the leads has opposite ends in a width-wise direction that extends along the side surface of the encapsulation resin. The external connection portion includes two recesses arranged toward a center in the width-wise direction from the opposite ends. The two recesses extend from a distal surface toward the encapsulation resin. The opposite ends in the width-wise direction define an end connection part. The external connection portion includes a part between the two recesses defining a center connection part.
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公开(公告)号:US20240347405A1
公开(公告)日:2024-10-17
申请号:US18752182
申请日:2024-06-24
Applicant: ROHM CO., LTD.
Inventor: Koshun SAITO
IPC: H01L23/31 , H01L23/00 , H01L23/495
CPC classification number: H01L23/3121 , H01L23/49513 , H01L23/49562 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/29111 , H01L2224/29139 , H01L2224/29147 , H01L2224/29155 , H01L2224/29166 , H01L2224/32245 , H01L2224/45124 , H01L2224/48175 , H01L2224/73265
Abstract: A semiconductor device includes a semiconductor element, first and second leads, and a sealing resin. The semiconductor element includes first and second electrodes. The first lead includes a mounting base having a main face to which the first electrode is bonded and a back face, and includes a first terminal connected to the first electrode. The second lead includes a second terminal connected to the second electrode. The sealing resin includes a main face and a back face opposite to each other, and includes an end face oriented in the protruding direction of the terminals. The back face of the mounting base is exposed from the back face of the resin. The sealing resin includes a groove formed in its back face and disposed between the back face of the mounting base and a boundary between the second terminal and the end face of the resin.
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公开(公告)号:US20240112990A1
公开(公告)日:2024-04-04
申请号:US18249473
申请日:2021-12-14
Applicant: ROHM CO., LTD.
Inventor: Koshun SAITO , Kota ISE , Kosuke YAMADA
IPC: H01L23/495 , H01L23/00
CPC classification number: H01L23/49524 , H01L23/49537 , H01L24/27 , H01L24/32 , H01L24/35 , H01L24/40 , H01L24/41 , H01L24/73 , H01L24/96 , H01L23/49562 , H01L2224/27515 , H01L2224/32245 , H01L2224/35985 , H01L2224/40245 , H01L2224/4103 , H01L2224/73263 , H01L2924/13064
Abstract: A semiconductor device manufacturing method includes a first preparation step, a second preparation step, a mounting step, a third preparation step, a placing step and a curing step. In the first preparation step, a first leadframe including an island part is prepared. In the second preparation step, a semiconductor element including an element obverse surface, an element reverse surface, a first electrode and a second electrode is prepared. In the mounting step, the semiconductor element is mounted on the island part with a first conductive paste interposed between the element reverse surface and the island part. In the third preparation step, a second leadframe including a first part, a second part, a frame part, a first connecting part and a second connecting part is prepared. In the placing step, the second leadframe is placed with a second conductive paste interposed between the first part and the first electrode and with a third conductive paste interposed between the second part and the second electrode. In the curing step, the first conductive paste, the second conductive paste and the third conductive paste are hardened.
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公开(公告)号:US20210391287A1
公开(公告)日:2021-12-16
申请号:US17459604
申请日:2021-08-27
Applicant: ROHM CO., LTD.
Inventor: Koshun SAITO
IPC: H01L23/00 , H01L21/768 , H01L23/31 , H01L23/495
Abstract: A semiconductor device includes a predetermined number of leads, a semiconductor element electrically connected to the leads and supported by one of the leads, and a sealing resin that covers the semiconductor element and a part of each lead. Each lead includes some portions exposed from the sealing resin. A surface plating layer is formed on at least one of the exposed portions of the respective leads.
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公开(公告)号:US20210343629A1
公开(公告)日:2021-11-04
申请号:US17373165
申请日:2021-07-12
Applicant: Rohm Co., Ltd.
Inventor: Koshun SAITO , Hiroyuki SAKAIRI , Yasufumi MATSUOKA , Kenichi YOSHIMOCHI
IPC: H01L23/495 , H01L23/00
Abstract: A semiconductor device provided with first and second semiconductor element each having an obverse and a reverse surface with a drain electrode, source electrode and gate electrode provided on the obverse surface. The semiconductor device is also provided with a control element electrically connected to the gate electrodes of the respective semiconductor elements, and with a plurality of leads, which include a first lead carrying the first semiconductor element, a second lead carrying the second semiconductor element, and a third lead carrying the control element. The first and second leads overlap with each other as viewed in a first direction perpendicular to the thickness direction of the semiconductor device, and the third lead overlaps with the first and second leads as viewed in a second direction perpendicular to the thickness direction and the first direction.
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公开(公告)号:US20210320044A1
公开(公告)日:2021-10-14
申请号:US17268277
申请日:2019-09-18
Applicant: ROHM CO., LTD.
Inventor: Koshun SAITO
IPC: H01L23/31
Abstract: A semiconductor device includes a semiconductor element, first and second leads, and a sealing resin. The semiconductor element includes first and second electrodes. The first lead includes a mounting base having a main face to which the first electrode is bonded and a back face, and includes a first terminal connected to the first electrode. The second lead includes a second terminal connected to the second electrode. The sealing resin includes a main face and a back face opposite to each other, and includes an end face oriented in the protruding direction of the terminals. The back face of the mounting base is exposed from the back face of the resin. The sealing resin includes a groove formed in its back face and disposed between the back face of the mounting base and a boundary between the second terminal and the end face of the resin.
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公开(公告)号:US20190333885A1
公开(公告)日:2019-10-31
申请号:US16509159
申请日:2019-07-11
Applicant: ROHM CO., LTD.
Inventor: Koshun SAITO
IPC: H01L23/00 , H01L21/768 , H01L23/495 , H01L23/31
Abstract: A semiconductor device includes a predetermined number of leads, a semiconductor element electrically connected to the leads and supported by one of the leads, and a sealing resin that covers the semiconductor element and a part of each lead. Each lead includes some portions exposed from the sealing resin. A surface plating layer is formed on at least one of the exposed portions of the respective leads.
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公开(公告)号:US20190304879A1
公开(公告)日:2019-10-03
申请号:US16364517
申请日:2019-03-26
Applicant: Rohm Co., Ltd.
Inventor: Koshun SAITO
IPC: H01L23/495 , H01L23/31 , H01L21/48 , H01L21/56 , H01L21/683 , H01L23/00 , C23F17/00 , C25D7/12
Abstract: A semiconductor device includes a semiconductor element, a plurality of leads electrically connected to the semiconductor element and one of which supports the semiconductor element, a sealing resin covering the semiconductor element and a portion of each leads, and first and second plating layers exposed from the sealing resin. The sealing resin includes a resin side surface facing in a first direction perpendicular to the thickness direction. At least one of the leads has a lead end surface connected to its back surface and flush with the resin side surface. The first plating layer covers the back surface of the lead. The second plating layer covers the lead end surface and projects in the first direction relative to the resin side surface. An edge of the second plating layer overlaps with the first plating layer as viewed in the first direction.
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公开(公告)号:US20170316997A1
公开(公告)日:2017-11-02
申请号:US15496800
申请日:2017-04-25
Applicant: ROHM CO., LTD.
Inventor: Koshun SAITO
IPC: H01L23/29 , H01L21/56 , H01L23/00 , H01L21/768 , H01L21/48 , H01L23/498 , H01L23/495
CPC classification number: H01L24/05 , H01L21/76867 , H01L23/3107 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49582 , H01L23/562 , H01L24/29 , H01L24/46 , H01L24/49 , H01L24/97 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/0603 , H01L2224/29644 , H01L2224/32245 , H01L2224/48247 , H01L2224/48465 , H01L2224/49111 , H01L2224/49113 , H01L2224/49431 , H01L2224/73265 , H01L2224/97 , H01L2924/00014 , H01L2924/15747 , H01L2924/181 , H01L2224/85 , H01L2224/83 , H01L2924/00012 , H01L2224/45099
Abstract: A semiconductor device includes a predetermined number of leads, a semiconductor element electrically connected to the leads and supported by one of the leads, and a sealing resin that covers the semiconductor element and a part of each lead. Each lead includes some portions exposed from the sealing resin. A surface plating layer is formed on at least one of the exposed portions of the respective leads.
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公开(公告)号:US20240282676A1
公开(公告)日:2024-08-22
申请号:US18649331
申请日:2024-04-29
Applicant: Rohm Co., Ltd.
Inventor: Ryotaro KAKIZAKI , Yasumasa KASUYA , Koshun SAITO
IPC: H01L23/495 , H01L23/00 , H01L23/31
CPC classification number: H01L23/49513 , H01L23/3107 , H01L23/49562 , H01L24/45 , H01L24/48 , H01L2224/45144 , H01L2224/48245 , H01L2924/13091
Abstract: A semiconductor device includes a semiconductor element, a lead and a sealing resin. The lead includes a die pad and terminal. The die pad includes a lead obverse surface facing a first side in a thickness direction for mounting the semiconductor element, and a lead reverse surface facing a second side in the thickness direction. The sealing resin includes a first resin surface facing the first side in the thickness direction, a second resin surface facing the second side in the thickness direction, and a third resin surface facing a first side in a first direction orthogonal to the thickness direction. The sealing covers resin the semiconductor element and a part of the die pad. The lead reverse surface includes a portion exposed from the second resin surface and located on the first side in the first direction from the third resin surface as viewed in the thickness direction.
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