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公开(公告)号：US11682622B2
公开(公告)日：2023-06-20
申请号：US17165246
申请日：2021-02-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung-Eun Byun , Keunwook Shin , Yonghoon Kim , Hyeonjin Shin , Hyunjae Song , Changseok Lee , Changhyun Kim , Yeonchoo Cho
IPC: H01L23/532 , H01L21/768 , H01L23/522
CPC classification number: H01L23/53276 , H01L21/76802 , H01L21/76846 , H01L21/76849 , H01L21/76877 , H01L23/5226
Abstract: Provided are an interconnect structure and an electronic device including the interconnect structure. The interconnect structure includes a dielectric layer including at least one trench, a conductive wiring filling an inside of the at least one trench, and a cap layer on at least one surface of the conductive wiring. The cap layer includes nanocrystalline graphene. The nanocrystalline includes nano-sized crystals.
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公开(公告)号：US11626282B2
公开(公告)日：2023-04-11
申请号：US16678115
申请日：2019-11-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Eunkyu Lee , Kyung-Eun Byun , Hyunjae Song , Hyeonjin Shin , Changhyun Kim , Keunwook Shin , Changseok Lee , Alum Jung
IPC: H01L21/02 , H01L29/16 , H01L29/165
Abstract: Provided are a graphene structure and a method of forming the graphene structure. The graphene structure includes a substrate and graphene on a surface of the substrate. Here, a bonding region in which a material of the substrate and carbon of the graphene are covalently bonded is formed between the surface of the substrate and the graphene.
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公开(公告)号：US11545358B2
公开(公告)日：2023-01-03
申请号：US16851675
申请日：2020-04-17
Inventor： Changhyun Kim , Sang-Woo Kim , Kyung-Eun Byun , Hyeonjin Shin , Ahrum Sohn , Jaehwan Jung
Abstract: Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: providing a substrate in a reaction chamber; depositing a transition metal dichalcogenide thin film on the substrate using a sputtering process that uses a transition metal precursor and a chalcogen precursor and is performed at a first temperature; and injecting the chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film at a second temperature that is higher than the first temperature. The substrate may include a sapphire substrate, a silicon oxide (SiO2) substrate, a nanocrystalline graphene substrate, or a molybdenum disulfide (MoS2) substrate.
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公开(公告)号：US11149346B2
公开(公告)日：2021-10-19
申请号：US16244906
申请日：2019-01-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Changhyun Kim , Hyeonjin Shin , Kyung-Eun Byun , Keunwook Shin , Changseok Lee , Seunggeol Nam , Sungjoo An , Janghee Lee , Jeonil Lee , Yeonchoo Cho
IPC: C23C16/26 , C01B32/186 , C23C14/02 , C23C16/56 , C23C14/06
Abstract: Provided are methods of directly growing a carbon material. The method may include a first operation and a second operation. The first operation may include adsorbing carbons onto a substrate by supplying the carbons to the substrate. The second operation may include removing unreacted carbon residues from the substrate after suspending the supplying the carbons of the first operation. The two operations may be repeated until a desired graphene is formed on the substrate. The substrate may be maintained at a temperature less than 700° C. In another embodiment, the method may include forming a carbon layer on a substrate, removing carbons that are not directly adsorbed to the substrate on the carbon layer, and repeating the two operations until desired graphene is formed on the substrate. The forming of the carbon layer includes supplying individual carbons onto the substrate by preparing the individual carbons.
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公开(公告)号：US11069619B2
公开(公告)日：2021-07-20
申请号：US16238208
申请日：2019-01-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seunggeol Nam , Hyeonjin Shin , Keunwook Shin , Changhyun Kim , Kyung-Eun Byun , Hyunjae Song , Eunkyu Lee , Changseok Lee , Alum Jung , Yeonchoo Cho
IPC: H01L23/532 , H01L23/528 , H01L23/522
Abstract: An interconnect structure and an electronic device including the interconnect structure are disclosed. The interconnect structure may include a metal interconnect having a bottom surface and two opposite side surfaces surrounded by a dielectric layer, a graphene layer on the metal interconnect, and a metal bonding layer providing interface adhesion between the metal interconnect and the graphene layer. The metal bonding layer includes a metal material.
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Patent Agency Ranking
公开(公告)号：US20200032388A1
公开(公告)日：2020-01-30
申请号：US16244906
申请日：2019-01-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Changhyun Kim , Hyeonjin Shin , Kyung-Eun Byun , Keunwook Shin , Changseok Lee , Seunggeol Nam , Sungjoo An , Janghee Lee , Jeonil Lee , Yeonchoo Cho
IPC: C23C16/26 , C01B32/186 , C23C14/06 , C23C16/56 , C23C14/02
Abstract: Provided are methods of directly growing a carbon material. The method may include a first operation and a second operation. The first operation may include adsorbing carbons onto a substrate by supplying the carbons to the substrate. The second operation may include removing unreacted carbon residues from the substrate after suspending the supplying the carbons of the first operation. The two operations may be repeated until a desired graphene is formed on the substrate. The substrate may be maintained at a temperature less than 700° C. In another embodiment, the method may include forming a carbon layer on a substrate, removing carbons that are not directly adsorbed to the substrate on the carbon layer, and repeating the two operations until desired graphene is formed on the substrate. The forming of the carbon layer includes supplying individual carbons onto the substrate by preparing the individual carbons.
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公开(公告)号：US10444752B2
公开(公告)日：2019-10-15
申请号：US15440138
申请日：2017-02-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Changhyun Kim , Hyoa Kang , Changwoo Shin , Baek Hwan Cho , Derek Daehyun Ji
IPC: G05D1/00 , G05D1/02 , H04N13/00 , G06K9/00 , G06T7/593 , H04N13/243 , H04N13/296 , B60W30/00 , H04N13/128 , H04N13/239
Abstract: Disclosed is a stereo camera-based autonomous driving method and apparatus, the method including estimating a driving situation of a vehicle, determining a parameter to control a stereo camera width of a stereo camera based on the estimated driving situation, controlling a capturer configured to control arrangement between two cameras of the stereo camera for a first direction based on the determined parameter, and measuring a depth of an object located in the first direction based on two images respectively captured by the two cameras with the controlled arrangement.
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公开(公告)号：US12032829B2
公开(公告)日：2024-07-09
申请号：US17861569
申请日：2022-07-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seon Wook Kim , Yoonah Paik , Changhyun Kim , Won Jun Lee
IPC: G06F3/06
CPC classification number: G06F3/0611 , G06F3/0659 , G06F3/0673
Abstract: Disclosed is a memory device including a plurality of memory banks, each of which performs an operation based on first operand data including pieces of first unit data and second operand data including pieces of second unit data and a processing in-memory interface unit (PIM IU) that delivers signals for an operation request to the plurality of memory banks. Each of the plurality of memory banks includes a memory cell array configured to store one of the pieces of first unit data and a PIM engine that reads the one of the pieces of first unit data from the memory cell array, reads the pieces of second unit data broadcast to the plurality of memory banks, and generates an operation result by performing an operation based on the one of the pieces of first unit data and the pieces of second unit data.
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公开(公告)号：US11909063B2
公开(公告)日：2024-02-20
申请号：US17250634
申请日：2019-08-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Soonwan Chung , Myungheon Kang , Junho Park , Junghyun Lee , Changhyun Kim
IPC: H01M50/293 , H01M50/247 , H01M50/202 , C09J109/06 , C09J123/22 , H04M1/02 , H01M50/264 , H01M50/244 , H01M50/289 , H01M50/284
CPC classification number: H01M50/293 , C09J109/06 , C09J123/22 , H01M50/202 , H01M50/244 , H01M50/247 , H01M50/264 , H04M1/0262 , H01M50/284 , H01M50/289 , H01M2220/30
Abstract: An electronic device, according to various embodiments of the present disclosure, may comprise: a housing including a seating groove therein; a battery seated in the seating groove, at least a partial area of which includes a curved surface; and an adhesive member disposed between the battery and the seating groove and formed along at least a portion of an edge of the battery. The adhesive member may be formed having varied predetermined thicknesses, corresponding to a position of the battery.
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30.发明公开公开(公告)号：US20240047564A1
公开(公告)日：2024-02-08
申请号：US18321290
申请日：2023-05-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Joungeun YOO , Changhyun Kim , Kyung-Eun Byun , Minsu Seol , Keunwook Shin , Eunkyu Lee
CPC classification number: H01L29/7606 , H01L29/24
Abstract: A semiconductor device may include a channel layer including a two-dimensional (2D) semiconductor material, a gate insulating layer on a center portion of the channel layer, a gate electrode on the gate insulating layer, and a first conductive layer and a second conductive layer respectively contacting opposite sides of the channel layer. Each of the first and second conductive layers may include metal boride.
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