公开(公告)号：US20160035567A1

公开(公告)日：2016-02-04

申请号：US14878399

申请日：2015-10-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro SATO ,  Yasutaka NAKAZAWA ,  Takayuki CHO ,  Shunsuke KOSHIOKA ,  Hajime TOKUNAGA ,  Masami JINTYOU

IPC: H01L21/02 ,  H01L21/306 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  G02F1/136277 ,  G02F1/1368 ,  H01L21/02365 ,  H01L21/02403 ,  H01L21/02422 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/30604 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3248 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US20150270404A1

公开(公告)日：2015-09-24

申请号：US14733489

申请日：2015-06-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro SATO ,  Yasutaka NAKAZAWA ,  Takayuki CHO ,  Shunsuke KOSHIOKA ,  Hajime TOKUNAGA ,  Masami JINTYOU

IPC: H01L29/786 ,  H01L29/04 ,  G02F1/1362 ,  H01L27/12 ,  H01L27/32 ,  G02F1/1368 ,  H01L29/24 ,  H01L29/423

CPC classification number: H01L29/7869 ,  G02F1/136277 ,  G02F1/1368 ,  H01L21/02365 ,  H01L21/02403 ,  H01L21/02422 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/30604 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3248 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

Abstract translation: 晶体管包括层叠有氧化物半导体膜和氧化膜的多层膜，栅极电极和栅极绝缘膜。 多层膜与栅电极重叠，栅极绝缘膜介于其间。 多层膜具有在氧化物半导体膜的底面和氧化物半导体膜的侧面之间具有第一角度的形状，以及氧化物膜的底面与氧化膜的侧面之间的第二角度。 第一个角度是锐角并小于第二个角度。 此外，制造包括这种晶体管的半导体器件。

公开(公告)号：US20140151685A1

公开(公告)日：2014-06-05

申请号：US14089085

申请日：2013-11-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime TOKUNAGA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: H01L29/22

CPC classification number: H01L29/78696 ,  H01L29/22 ,  H01L29/247 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693

Abstract: A highly reliable semiconductor device having stable electrical characteristics is provided. Oxide films each containing one or more kinds of metal elements included in an oxide semiconductor film are formed in contact with an upper side and a lower side of the oxide semiconductor film where a channel is formed, whereby interface states are not easily generated at an upper interface and a lower interface of the oxide semiconductor film. A material which has a lower electron affinity than the oxide semiconductor film is used for the oxide films in contact with the oxide semiconductor film, whereby electrons flowing in the channel hardly move in the oxide films and mainly move in the oxide semiconductor film. Thus, even when an interface state exists between the oxide film and an insulating film formed on the outside of the oxide film, the state hardly influences the movement of electrons.

Abstract translation: 提供了具有稳定的电气特性的高度可靠的半导体器件。 与包含在氧化物半导体膜中的一种或多种金属元素的氧化物膜形成为与形成沟道的氧化物半导体膜的上侧和下侧接触，由此在上部不容易产生界面状态 界面和氧化物半导体膜的下界面。 与氧化物半导体膜接触的氧化物膜使用具有比氧化物半导体膜更低的电子亲和力的材料，由此在沟道中流动的电子在氧化膜中几乎不会移动，并且主要在氧化物半导体膜中移动。 因此，即使在氧化物膜和形成在氧化物膜的外部的绝缘膜之间存在界面状态的情况下，该状态几乎不影响电子的移动。

公开(公告)号：US20230317857A1

公开(公告)日：2023-10-05

申请号：US18207176

申请日：2023-06-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro SATO ,  Yasutaka NAKAZAWA ,  Takayuki CHO ,  Shunsuke KOSHIOKA ,  Hajime TOKUNAGA ,  Masami JINTYOU

IPC: H01L29/786 ,  H01L29/10 ,  H01L21/02 ,  H01L21/465 ,  H10K59/123 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/04 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L21/306 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/1033 ,  H01L29/786 ,  H01L21/02551 ,  H01L21/02554 ,  H01L29/78693 ,  H01L21/02422 ,  H01L21/02631 ,  H01L21/465 ,  H01L29/78603 ,  H10K59/123 ,  H01L29/78696 ,  G02F1/136277 ,  G02F1/1368 ,  H01L21/02365 ,  H01L21/02403 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/24 ,  H01L29/42356 ,  H01L21/02565 ,  H01L21/30604 ,  H01L27/1259 ,  H01L29/66742 ,  H01L29/66969

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US20220285562A1

公开(公告)日：2022-09-08

申请号：US17750487

申请日：2022-05-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA ,  Toshinari SASAKI ,  Keisuke MURAYAMA ,  Daisuke MATSUBAYASHI

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/51 ,  H01L29/66 ,  H01L29/24

Abstract: In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide semiconductor film has an amorphous structure or a microcrystalline structure, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

公开(公告)号：US20170323978A1

公开(公告)日：2017-11-09

申请号：US15661312

申请日：2017-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime TOKUNAGA ,  Takuya HANDA

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/45 ,  H01L27/12 ,  H01L27/146 ,  H01L29/24 ,  G02F1/1368 ,  H01L27/32

CPC classification number: H01L29/78696 ,  G02F1/1368 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/14616 ,  H01L27/14632 ,  H01L27/14687 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

公开(公告)号：US20170309751A1

公开(公告)日：2017-10-26

申请号：US15648914

申请日：2017-07-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/49 ,  H01L29/423 ,  H01L29/24 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78696

Abstract: A highly reliable semiconductor device including an oxide semiconductor is provided by preventing a change in its electrical characteristics. A semiconductor device which includes a first oxide semiconductor layer which is in contact with a source electrode layer and a drain electrode layer and a second oxide semiconductor layer which serves as a main current path (channel) of a transistor is provided. The first oxide semiconductor layer serves as a buffer layer for preventing a constituent element of the source and drain electrode layers from diffusing into the channel. By providing the first oxide semiconductor layer, it is possible to prevent diffusion of the constituent element into an interface between the first oxide semiconductor layer and the second oxide semiconductor layer and into the second oxide semiconductor layer.

公开(公告)号：US20160293641A1

公开(公告)日：2016-10-06

申请号：US15187106

申请日：2016-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro SATO ,  Yasutaka NAKAZAWA ,  Takayuki CHO ,  Shunsuke KOSHIOKA ,  Hajime TOKUNAGA ,  Masami JINTYOU

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1362 ,  H01L29/66 ,  G02F1/1368 ,  H01L27/32 ,  H01L29/04

CPC classification number: H01L29/7869 ,  G02F1/136277 ,  G02F1/1368 ,  H01L21/02365 ,  H01L21/02403 ,  H01L21/02422 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/30604 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3248 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US20160254371A1

公开(公告)日：2016-09-01

申请号：US15150587

申请日：2016-05-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA ,  Toshinari SASAKI ,  Keisuke MURAYAMA ,  Daisuke MATSUBAYASHI

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/51

CPC classification number: H01L29/66969 ,  H01L21/022 ,  H01L21/02263 ,  H01L27/1225 ,  H01L29/513 ,  H01L29/78609 ,  H01L29/7869

Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

Abstract translation: 为了减少半导体器件中的氧化物半导体膜的缺陷。 为了改善包括氧化物半导体膜的半导体器件的电特性和可靠性。 在包括晶体管的半导体器件中，所述晶体管包括形成在衬底上的栅电极，覆盖栅电极的栅极绝缘膜，与栅电极重叠的多层膜，栅极绝缘膜设置在其间;以及一对电极， 多层膜，覆盖晶体管的第一氧化物绝缘膜和形成在第一氧化物绝缘膜上的第二氧化物绝缘膜，多层膜包括氧化物半导体膜和含有In或Ga的氧化物膜，第一氧化物绝缘膜为 氧透过氧化物绝缘膜，第二氧化物绝缘膜是比化学计量组合物含有氧更多的氧化物绝缘膜。

公开(公告)号：US20140034945A1

公开(公告)日：2014-02-06

申请号：US13953316

申请日：2013-07-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime TOKUNAGA ,  Takuya HANDA

IPC: H01L29/24 ,  H01L21/02

CPC classification number: H01L29/78696 ,  G02F1/1368 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/14616 ,  H01L27/14632 ,  H01L27/14687 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

Abstract translation: 提供具有几乎不变化的晶体管特性并包括氧化物半导体的半导体器件。 半导体器件包括绝缘膜上的导电膜上的绝缘膜和氧化物半导体膜。 氧化物半导体膜包括第一氧化物半导体层，第一氧化物半导体层上的第二氧化物半导体层，以及在第二氧化物半导体层上的第三氧化物半导体层。 第二氧化物半导体层的导带的底部的能级低于第一和第三氧化物半导体层的能级。 第二氧化物半导体层的端部位于比第一氧化物半导体层的端部更靠内侧。