公开(公告)号：US11430404B2

公开(公告)日：2022-08-30

申请号：US17053901

申请日：2019-05-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Susumu Kawashima ,  Naoto Kusumoto

IPC: G09G3/36 ,  G09G3/3225 ,  G09G3/3275 ,  H01L27/12 ,  H01L27/32 ,  G02F1/1368 ,  H01L29/786

Abstract: A display device capable of improving image quality is provided. The display device is provided with an adder circuit in and outside a display region, and the adder circuit has a function of adding a plurality of data supplied from a source driver together. Components of the adder circuit are divided and partly arranged in the display region. Thus, limitation on the size of the component included in the adder circuit can be eased, and data addition can be performed efficiently. In addition, by providing other components included in the adder circuit outside the display region, the number of wirings in the display region can be reduced and the aperture ratio of the pixel can be increased.

公开(公告)号：US11373610B2

公开(公告)日：2022-06-28

申请号：US17298999

申请日：2019-12-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Susumu Kawashima ,  Koji Kusunoki ,  Kazunori Watanabe ,  Naoto Kusumoto

IPC: G09G3/36 ,  G02F1/1368

Abstract: A display apparatus with low-power consumption is provided. The display apparatus includes an inverter circuit and a pixel having a function of adding data, and the inverter circuit has a function of inverting data supplied from a source driver. The inverter circuit has a function of inverting data supplied from a source driver. The pixel has a function of adding data supplied from the source driver and the inverter circuit. Accordingly, the pixel can generate a voltage several times higher than the output voltage of the source driver and can supply the voltage to a display device. With such a structure, the output voltage of the source driver can be lowered, so that a display apparatus with low power consumption can be achieved.

公开(公告)号：US11302278B2

公开(公告)日：2022-04-12

申请号：US16644103

申请日：2018-09-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Susumu Kawashima ,  Koji Kusunoki ,  Kazunori Watanabe ,  Kouhei Toyotaka ,  Naoto Kusumoto ,  Shunpei Yamazaki

IPC: G09G3/36 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/105 ,  H01L27/12 ,  H01L29/24 ,  H01L29/786

Abstract: A display device capable of performing image processing is provided. A memory node is provided in each pixel included in the display device. An intended correction data is held in the memory node. The correction data is calculated by an external device and written into each pixel. The correction data is added to image data by capacitive coupling, and the resulting data is supplied to a display element. Thus, the display element can display a corrected image. The correction enables image upconversion, for example.

公开(公告)号：US10910427B2

公开(公告)日：2021-02-02

申请号：US16541292

申请日：2019-08-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takayuki Ikeda ,  Naoto Kusumoto

IPC: H01L27/146 ,  H01L27/12 ,  H01L29/786 ,  H01L29/78

Abstract: An imaging device having a three-dimensional integration structure is provided. A first structure including a transistor including silicon in an active layer or an active region and a second structure including an oxide semiconductor in an active layer are fabricated. After that, the first and second structures are bonded to each other so that metal layers included in the first and second structures are bonded to each other; thus, an imaging device having a three-dimensional integration structure is formed.

公开(公告)号：US20200212094A1

公开(公告)日：2020-07-02

申请号：US16812441

申请日：2020-03-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takuro Ohmaru ,  Naoto Kusumoto

IPC: H01L27/146 ,  H01L31/0272 ,  H04N5/378 ,  H04N5/225 ,  H04N5/3745 ,  H04N5/353 ,  H04N5/32

Abstract: An imaging device that has a structure where a transistor is used in common by a plurality of pixels and is capable of imaging with a global shutter system is provided. A transistor that resets the potential of a charge detection portion, a transistor that outputs a signal corresponding to the potential of the charge detection portion, and a transistor that selects a pixel are used in common by the plurality of pixels. A node AN (a first charge retention portion), a node FD (a second charge retention portion), and a node FDX (the charge detection portion) are provided. Imaging data obtained in the node AN is transferred to the node FD, and the imaging data is sequentially transferred from the node FD to the node FDX to be read.

公开(公告)号：US10394069B2

公开(公告)日：2019-08-27

申请号：US15616179

申请日：2017-06-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Daisuke Kubota ,  Naoto Kusumoto

IPC: G02F1/1335 ,  G09G3/32 ,  G09G3/36 ,  H01L31/14 ,  G02B5/30 ,  G09G3/3233

Abstract: A display device includes a first region and a second region adjacent to the first region. A display element included in the first region has a function of reflecting visible light and a function of emitting visible light. A display element included in the second region has a function of emitting visible light. In an electronic device including the display device, the first region is located on a first surface (e.g., top surface) on which a main image is displayed, and the second region is located on a second surface (e.g., side surface) on which an auxiliary image is displayed.

公开(公告)号：US10020336B2

公开(公告)日：2018-07-10

申请号：US15383327

申请日：2016-12-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takayuki Ikeda ,  Naoto Kusumoto

IPC: H01L27/146 ,  H01L29/786 ,  H01L29/78

CPC classification number: H01L27/14634 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1229 ,  H01L27/14601 ,  H01L27/14616 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14692 ,  H01L29/78 ,  H01L29/7869 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: An imaging device having a three-dimensional integration structure is provided. A first structure including a transistor including silicon in an active layer or an active region and a second structure including an oxide semiconductor in an active layer are fabricated. After that, the first and second structures are bonded to each other so that metal layers included in the first and second structures are bonded to each other; thus, an imaging device having a three-dimensional integration structure is formed.

公开(公告)号：US20180077408A1

公开(公告)日：2018-03-15

申请号：US15702170

申请日：2017-09-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akio Suzuki ,  Naoto Kusumoto

IPC: H04N13/04 ,  H04N13/00 ,  H01L27/32

CPC classification number: H04N13/31 ,  G02B27/2214 ,  G02F1/13338 ,  G02F1/133514 ,  G02F1/133528 ,  G02F1/1368 ,  G02F1/137 ,  G02F2201/44 ,  G02F2203/02 ,  G02F2203/09 ,  H01L27/1225 ,  H01L27/323 ,  H01L27/3232 ,  H01L27/3262 ,  H01L27/3269 ,  H01L27/3272 ,  H01L29/786 ,  H01L29/7869 ,  H04N13/156 ,  H04N13/32 ,  H04N13/351 ,  H04N2213/001

Abstract: A display system which enables a stereoscopic image to be perceived by the naked eye is provided. The display system includes a display panel which can display a first image, a second image, a third image, and a fourth image. The first image has a region overlapping with the third image. The second image has a region overlapping with the fourth image. The first image and the third image are perceived by one of the right and left eyes and the second image and the fourth image are perceived by the other of the right and left eyes, so that a composite image of the first to fourth images is stereoscopically perceivable.

公开(公告)号：US09419143B2

公开(公告)日：2016-08-16

申请号：US14532406

申请日：2014-11-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kazuya Hanaoka ,  Naoto Kusumoto

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/45 ,  H01L27/12 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/0262 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/307 ,  H01L29/2206 ,  H01L29/247 ,  H01L29/45 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device with a structure in which an increase in the number of oxygen vacancies in an oxide semiconductor layer can be suppressed and a method for manufacturing the semiconductor device are provided. The semiconductor device includes an oxide insulating layer; intermediate layers apart from each other over the oxide insulating layer; a source electrode layer and a drain electrode layer over the intermediate layers; an oxide semiconductor layer that is electrically connected to the source electrode layer and the drain electrode layer and is in contact with the oxide insulating layer; a gate insulating film over the source electrode layer, the drain electrode layer, and the oxide semiconductor layer; and a gate electrode layer that is over the gate insulating film and overlaps with the source electrode layer, the drain electrode layer, and the oxide semiconductor layer.

Abstract translation: 可以抑制氧化物半导体层中氧空位数增加的结构的半导体器件和半导体器件的制造方法。 半导体器件包括氧化物绝缘层; 在氧化物绝缘层上彼此分开的中间层; 中间层上的源电极层和漏电极层; 与源电极层和漏电极层电连接并与氧化物绝缘层接触的氧化物半导体层; 源极电极层上的栅极绝缘膜，漏极电极层和氧化物半导体层; 以及在栅极绝缘膜上方并与源极电极层，漏极电极层和氧化物半导体层重叠的栅极电极层。

公开(公告)号：US08987738B2

公开(公告)日：2015-03-24

申请号：US13628458

申请日：2012-09-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takashi Hirose ,  Naoto Kusumoto

IPC: H01L31/18 ,  H01L31/06 ,  H01L31/075 ,  H01L31/04 ,  H01L31/20 ,  H01L31/0264 ,  H01L27/146 ,  H01L31/0224 ,  H01L31/0747

CPC classification number: H01L31/068 ,  H01L31/022425 ,  H01L31/028 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

Abstract: A photoelectric conversion device with improved electric characteristics is provided. The photoelectric conversion device has a structure in which a window layer is formed by a stack of a first silicon semiconductor layer and a second silicon semiconductor layer, and the second silicon semiconductor layer has high carrier concentration than the first silicon semiconductor layer and has an opening. Light irradiation is performed on the first silicon semiconductor layer through the opening without passing through the second silicon semiconductor layer; thus, light absorption loss in the window layer can be reduced.

Abstract translation: 提供了具有改善的电特性的光电转换装置。 光电转换装置具有通过第一硅半导体层和第二硅半导体层的堆叠形成窗口层的结构，并且第二硅半导体层的载流子浓度高于第一硅半导体层，并且具有开口 。 通过开口对第一硅半导体层进行光照射而不通过第二硅半导体层; 因此，可以降低窗口层中的光吸收损失。