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公开(公告)号：US10002580B2
公开(公告)日：2018-06-19
申请号：US15299515
申请日：2016-10-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Tatsuji Nishijima , Seiichi Yoneda , Takuro Ohmaru , Jun Koyama
IPC: H01L29/10 , G09G3/36 , H01L33/16 , H01L27/12 , G09G5/393 , G09G5/395 , H01L27/105 , H01L29/24 , H01L29/786 , G02F1/1362
CPC classification number: G09G3/3648 , G02F2001/136295 , G09G3/3614 , G09G3/3677 , G09G5/393 , G09G5/395 , G09G2300/0842 , G09G2310/0264 , G09G2330/021 , G09G2330/022 , G09G2360/121 , H01L27/1052 , H01L27/1225 , H01L29/24 , H01L29/7869 , H01L33/16
Abstract: In the case where a still image is displayed on a pixel portion having a pixel, for example, a driver circuit for controlling writing of an image signal having image data to the pixel portion stops by stopping supply of power supply voltage to the driver circuit, and writing of an image signal to the pixel portion is stopped. After the driver circuit stops, supply of power supply voltage to a panel controller for controlling the operation of the driver circuit and an image memory for storing the image data is stopped, and supply of power supply voltage to a CPU for collectively controlling the operation of the panel controller, the image memory, and a power supply controller for controlling supply of power supply voltage to a variety of circuits in a semiconductor display device is stopped.
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公开(公告)号：US09900007B2
公开(公告)日：2018-02-20
申请号：US15454225
申请日：2017-03-09
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Seiichi Yoneda , Tatsuji Nishijima
IPC: H03K19/00 , H03K19/177 , H01L29/786 , H01L27/12
CPC classification number: H03K19/0013 , H01L27/1225 , H01L27/124 , H01L29/7869 , H03K19/0008 , H03K19/17736 , H03K19/17744
Abstract: An object is to provide a programmable logic device having logic blocks connected to each other by a programmable switch, where the programmable switch is characterized by an oxide semiconductor transistor incorporated therein. The extremely low off-state current of the oxide semiconductor transistor provides a function as a non-volatile memory due to its high ability to hold a potential of a gate electrode of a transistor which is connected to the oxide semiconductor transistor. The ability of the oxide semiconductor transistor to function as a non-volatile memory allows the configuration data for controlling the connection of the logic blocks to be maintained even in the absence of a power supply potential. Hence, the rewriting process of the configuration data at starting of the device can be omitted, which contributes to the reduction in power consumption of the device.
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公开(公告)号：US09478704B2
公开(公告)日：2016-10-25
申请号：US13686366
申请日：2012-11-27
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Tatsuji Nishijima , Seiichi Yoneda , Takuro Ohmaru , Jun Koyama
IPC: H01L29/10 , H01L33/16 , G09G3/36 , H01L27/12 , G02F1/1362
CPC classification number: G09G3/3648 , G02F2001/136295 , G09G3/3614 , G09G3/3677 , G09G5/393 , G09G5/395 , G09G2300/0842 , G09G2310/0264 , G09G2330/021 , G09G2330/022 , G09G2360/121 , H01L27/1052 , H01L27/1225 , H01L29/24 , H01L29/7869 , H01L33/16
Abstract: In the case where a still image is displayed on a pixel portion having a pixel, for example, a driver circuit for controlling writing of an image signal having image data to the pixel portion stops by stopping supply of power supply voltage to the driver circuit, and writing of an image signal to the pixel portion is stopped. After the driver circuit stops, supply of power supply voltage to a panel controller for controlling the operation of the driver circuit and an image memory for storing the image data is stopped, and supply of power supply voltage to a CPU for collectively controlling the operation of the panel controller, the image memory, and a power supply controller for controlling supply of power supply voltage to a variety of circuits in a semiconductor display device is stopped.
Abstract translation: 在静止图像显示在具有像素的像素部分的情况下，例如通过停止对驱动电路的电源电压的供给来停止将具有图像数据的图像信号写入到像素部分的驱动电路， 并且停止向像素部分写入图像信号。 在驱动器电路停止之后，停止向用于控制驱动器电路的操作的面板控制器的电源电压供给和用于存储图像数据的图像存储器，并且向CPU提供电源电压以集中地控制 停止面板控制器，图像存储器和用于控制对半导体显示装置中的各种电路的电源电压供给的电源控制器。
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公开(公告)号：US09293427B2
公开(公告)日：2016-03-22
申请号：US14151269
申请日：2014-01-09
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Seiichi Yoneda
IPC: H01L23/66 , H01L21/8252 , H01L27/06 , H01L27/12
CPC classification number: H01L27/0629 , H01L21/8252 , H01L23/5222 , H01L23/528 , H01L23/535 , H01L23/66 , H01L27/0605 , H01L27/0733 , H01L27/1225 , H01L27/1255 , H01L29/41758 , H01L29/7869 , H01L2924/0002 , H02J50/12 , H03C2200/0029 , H03H7/1741 , H03J1/00 , H03J3/10 , H01L2924/00
Abstract: A semiconductor device includes an antenna functioning as a coil, a capacitor electrically connected to the antenna in parallel, a passive element forming a resonance circuit with the antenna and the capacitor by being electrically connected to the antenna and the capacitor in parallel, a first field effect transistor controlling whether the passive element is electrically connected to the antenna and the capacitor in parallel or not, and a memory circuit. The memory circuit includes a second field effect transistor which includes an oxide semiconductor layer where a channel is formed and in which a data signal is input to one of a source and a drain. The gate voltage of the first field effect transistor is set depending on the voltage of the other of the source and the drain of the second field effect transistor.
Abstract translation: 半导体器件包括用作线圈的天线，与天线并联电连接的电容器，通过与天线和电容器并联电连接而形成与天线和电容器的谐振电路的无源元件，第一场 效应晶体管，控制无源元件是否并联电连接到天线和电容器，以及存储器电路。 存储电路包括第二场效应晶体管，其包括其中形成沟道并且其中数据信号被输入到源极和漏极中的一个的氧化物半导体层。 第一场效应晶体管的栅极电压根据第二场效应晶体管的源极和漏极中的另一个的电压来设定。
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公开(公告)号：US09058867B2
公开(公告)日：2015-06-16
申请号：US13900578
申请日：2013-05-23
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Seiichi Yoneda
IPC: G11C14/00 , G06F1/30 , G06F11/14 , G06F11/10 , G06F1/32 , G06F1/28 , G06F12/02 , G11C11/00 , G11C5/14
CPC classification number: G11C14/00 , G06F1/28 , G06F1/30 , G06F1/3203 , G06F1/3206 , G06F1/3225 , G06F1/3234 , G06F1/3275 , G06F11/10 , G06F11/1048 , G06F11/1441 , G06F12/0246 , G11C5/144 , G11C11/005 , G11C11/1697 , G11C2029/0411
Abstract: A data saving period control circuit; a power gating control circuit; and a data processing circuit including a general-purpose register, an error correction code storage register, and an error correction code circuit are included. The general-purpose register and the error correction code storage register each include a volatile memory unit and a nonvolatile memory unit. The data saving period control circuit is a circuit for changing a length of a data saving period in which data output from the power gating control circuit is saved from the volatile memory unit to the nonvolatile memory unit included in the general-purpose register, depending on whether an error in an error correction code stored in the error correction code storage register is detected by the error correction code circuit.
Abstract translation: 数据保存周期控制电路; 电源门控控制电路; 并且包括包括通用寄存器，纠错码存储寄存器和纠错码电路的数据处理电路。 通用寄存器和纠错码存储寄存器各自包括易失性存储器单元和非易失性存储器单元。 数据保存周期控制电路是用于将从电源选通控制电路输出的数据从易失性存储器单元保存到包括在通用寄存器中的非易失性存储器单元的数据保存期间的长度，根据 是否由纠错码电路检测存储在纠错码存储寄存器中的纠错码中的错误。
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Patent Agency Ranking
公开(公告)号：US11314484B2
公开(公告)日：2022-04-26
申请号：US16609902
申请日：2018-05-07
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Munehiro Kozuma , Takeshi Aoki , Seiichi Yoneda , Yoshiyuki Kurokawa
Abstract: A semiconductor device having a novel structure is provided.
The semiconductor device includes a plurality of operation circuits that can switch different kinds of operation processing; a plurality of switch circuits that can switch a connection state between the operation circuits; and a controller. The operation circuit includes a first memory that stores data corresponding to a weight parameter used in the plurality of kinds of operation processing. The operation circuit executes a product-sum operation by switching weight data in accordance with a context. The switch circuit includes a second memory that stores data for switching a plurality of connection states in response to switching of a second context signal. The controller generates a second context signal on the basis of a first context signal. The amount of data stored in the second memory can be smaller than the amount of data stored in the first memory in the operation circuit.-
公开(公告)号：US11302819B2
公开(公告)日：2022-04-12
申请号：US16882994
申请日：2020-05-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Seiichi Yoneda
IPC: H01L29/786 , H01L27/12
Abstract: A first transistor and a second transistor are stacked. The first transistor and the second transistor have a gate electrode in common. At least one of semiconductor films used in the first transistor and the second transistor is an oxide semiconductor film. With the use of the oxide semiconductor film as the semiconductor film in the transistor, high field-effect mobility and high-speed operation can be achieved. Since the first transistor and the second transistor are stacked and have the gate electrode in common, the area of a region where the transistors are disposed can be reduced.
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公开(公告)号：US10784885B2
公开(公告)日：2020-09-22
申请号：US16623588
申请日：2018-06-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Takayuki Ikeda , Seiichi Yoneda
Abstract: A semiconductor device in which an increase of circuit area is prevented is provided. A semiconductor device including a control circuit with a plurality of scan chain circuits, a DA converter electrically connected to the control circuit, and a plurality of potential holding units electrically connected to the DA converter is provided. The plurality of potential holding units each include a transistor including an oxide semiconductor in a channel formation region and a capacitor electrically connected to the transistor. In accordance with digital data held in any one of the plurality of scan chain circuits, an output potential output from the DA converter is held in any one of the plurality of potential holding units.
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公开(公告)号：US10680110B2
公开(公告)日：2020-06-09
申请号：US16002435
申请日：2018-06-07
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Seiichi Yoneda
IPC: H01L29/786 , H01L27/12
Abstract: A first transistor and a second transistor are stacked. The first transistor and the second transistor have a gate electrode in common. At least one of semiconductor films used in the first transistor and the second transistor is an oxide semiconductor film. With the use of the oxide semiconductor film as the semiconductor film in the transistor, high field-effect mobility and high-speed operation can be achieved. Since the first transistor and the second transistor are stacked and have the gate electrode in common, the area of a region where the transistors are disposed can be reduced.
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公开(公告)号：US10559249B2
公开(公告)日：2020-02-11
申请号：US15386947
申请日：2016-12-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Seiichi Yoneda
IPC: H04N19/513 , G09G3/20 , H04N19/10 , H04N19/423 , H04N19/44 , H04N19/65 , G09G3/32 , G09G3/36 , H04N5/44
Abstract: To provide a novel device, a device with low power consumption, or a versatile device, the device includes a decoder, a driver circuit, and a display portion. The driver circuit includes a plurality of circuits. The display portion includes a plurality of display panels. The decoder has a function of generating a signal corresponding to an image displayed on the display portion. The decoder has a function of determining the necessity of rewriting an image of each of the display panels by detecting a change in the image of each of the display panels. The circuit has a function of outputting a signal to a display panel for which that image rewriting is determined to be necessary. The circuit has a function of stopping output of a signal to a display panel for which image rewriting is determined to be unnecessary.
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