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    IMAGING DEVICE, OPERATING METHOD THEREOF, AND ELECTRONIC DEVICE
    21.
    发明申请
    IMAGING DEVICE, OPERATING METHOD THEREOF, AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20220345655A1

    公开(公告)日：2022-10-27

    申请号：US17863660

    申请日：2022-07-13

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takuro OHMARU ,  Naoto KUSUMOTO ,  Kentaro HAYASHI

    IPC: H04N5/3745 ,  H01L27/146 ,  H04N5/232 ,  H04N5/347 ,  H04N5/369

    Abstract: An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.

    SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
    23.
    发明申请
    SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20170092674A1

    公开(公告)日：2017-03-30

    申请号：US15272093

    申请日：2016-09-21

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takuro OHMARU ,  Yukio MAEHASHI

    IPC: H01L27/146 ,  H01L29/24 ,  H01L29/786

    CPC classification number: H01L27/14616 ,  H01L27/14636 ,  H01L29/24 ,  H01L29/7869 ,  H04N5/378

    Abstract: A small semiconductor device suitable for high-speed operation is provided. The semiconductor device includes a first circuit, a global bit line pair for writing, a global bit line pair for reading, and a local bit line pair. The first circuit includes second to fifth circuits. The second to fifth circuits are electrically connected to each other by the local bit line pair. The second circuit functions as a read/write selection switch. The third circuit functions as a working memory that stores 1-bit complementary data temporarily. The fourth circuit has a function of precharging the local bit line pair. The fifth circuit includes n (n is an integer of 2 or more) sixth circuits. The sixth circuits each have a function of retaining 1-bit complementary data written from the third circuit.

    SEMICONDUCTOR DEVICE
    24.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20170033130A1

    公开(公告)日：2017-02-02

    申请号：US15293488

    申请日：2016-10-14

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Seiichi YONEDA ,  Takuro OHMARU

    IPC: H01L27/12 ,  H01L29/786

    CPC classification number: H01L27/1251 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/045 ,  H01L29/78 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869

    Abstract: A semiconductor device includes a first transistor which includes a first gate electrode below its oxide semiconductor layer and a second gate electrode above its oxide semiconductor layer, and a second transistor which includes a first gate electrode above its oxide semiconductor layer and a second gate electrode below its oxide semiconductor layer and is provided so as to at least partly overlap with the first transistor. In the semiconductor device, a conductive film serving as the second gate electrode of the first transistor and the second gate electrode of the second transistor is shared between the first transistor and the second transistor. Note that the second gate electrode not only controls the threshold voltages (Vth) of the first transistor and the second transistor but also has an effect of reducing interference of an electric field applied from respective first gate electrodes of the first transistor and the second transistor.

    Abstract translation: 半导体器件包括：第一晶体管，其包括在其氧化物半导体层下方的第一栅极电极和位于其氧化物半导体层上方的第二栅电极;以及第二晶体管，其在其氧化物半导体层上方包括第一栅极电极和第二栅电极， 其氧化物半导体层被设置成至少部分地与第一晶体管重叠。 在半导体器件中，用作第一晶体管的第二栅电极的导电膜和第二晶体管的第二栅电极在第一晶体管和第二晶体管之间共用。 注意，第二栅电极不仅控制第一晶体管和第二晶体管的阈值电压（Vth），而且还具有减小从第一晶体管和第二晶体管的各个第一栅电极施加的电场的干扰的效果。

    SEMICONDUCTOR DEVICE, IMAGING SYSTEM, AND ELECTRONIC DEVICE
    25.
    发明申请
    SEMICONDUCTOR DEVICE, IMAGING SYSTEM, AND ELECTRONIC DEVICE 审中-公开
    半导体器件，成像系统和电子器件

    公开(公告)号：US20160329368A1

    公开(公告)日：2016-11-10

    申请号：US15137381

    申请日：2016-04-25

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takuro OHMARU

    IPC: H01L27/146 ,  H01L31/0272 ,  H04N9/04 ,  H01L29/786

    CPC classification number: H01L27/14616 ,  H01L27/14636 ,  H01L27/14663 ,  H01L27/14667 ,  H01L29/7869 ,  H04N5/35563 ,  H04N5/3698 ,  H04N5/3745 ,  H04N5/37457 ,  H04N9/045

    Abstract: To provide a novel semiconductor device, a semiconductor device capable of operating at a high speed, or a semiconductor device with reduced area, or a semiconductor device with low power consumption. The semiconductor device which has a function of taking a moving image includes a pixel portion including a plurality of pixels, a first circuit, and a second circuit. Each of the plurality of pixels has a function of converting irradiation light to generate first data and a function of generating second data corresponding to a difference between the first data in a first frame period and the first data in a second frame period. The first circuit has a function of converting the second data into a digital signal and outputting the digital signal as compressed data of the moving image. The second circuit has a function of controlling output of the compressed data.

    Abstract translation: 为了提供一种新型半导体器件，能够高速工作的半导体器件，或具有减小面积的半导体器件，或者具有低功耗的半导体器件。 具有拍摄运动图像的功能的半导体装置包括包括多个像素的像素部分，第一电路和第二电路。 多个像素中的每一个具有转换照射光以产生第一数据的功能，以及产生与第一帧周期中的第一数据和第二帧周期中的第一数据之间的差相对应的第二数据的功能。 第一电路具有将第二数据转换为数字信号并将数字信号作为运动图像的压缩数据输出的功能。 第二电路具有控制压缩数据的输出的功能。

    SEMICONDUCTOR DEVICE, IMAGING DEVICE, AND ELECTRONIC DEVICE
    27.
    发明申请
    SEMICONDUCTOR DEVICE, IMAGING DEVICE, AND ELECTRONIC DEVICE 审中-公开
    半导体器件，成像器件和电子器件

    公开(公告)号：US20160126283A1

    公开(公告)日：2016-05-05

    申请号：US14925130

    申请日：2015-10-28

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takuro OHMARU

    IPC: H01L27/146 ,  H01L31/032 ,  H04N5/225 ,  H01L29/786

    CPC classification number: H04N5/2253 ,  H01L27/1225 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14641 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/37457

    Abstract: Provided is a novel semiconductor device, a semiconductor device with reduced area, or a versatile semiconductor device. The semiconductor device includes a pixel portion including a first pixel, a second pixel, a third pixel, and a fourth pixel; a first switch and a second switch located outside the first to fourth pixels; a first wiring located outside the first to fourth pixels; a second wiring electrically connected to the first and second pixels; and a third wiring electrically connected to the third and fourth pixels. A first terminal of the first switch is electrically connected to the first wiring. A second terminal of the first switch is electrically connected to the second wiring. A first terminal of the second switch is electrically connected to the first wiring. A second terminal of the second switch is electrically connected to the third wiring.

    Abstract translation: 提供了一种新颖的半导体器件，具有减小的面积的半导体器件或多功能半导体器件。 半导体器件包括包括第一像素，第二像素，第三像素和第四像素的像素部分; 位于第一至第四像素之外的第一开关和第二开关; 位于第一至第四像素外的第一布线; 电连接到第一和第二像素的第二布线; 以及电连接到第三和第四像素的第三布线。 第一开关的第一端子电连接到第一布线。 第一开关的第二端子电连接到第二布线。 第二开关的第一端子电连接到第一布线。 第二开关的第二端子电连接到第三布线。

    CONTROL CIRCUIT AND DC-DC CONVERTER
    28.
    发明申请
    CONTROL CIRCUIT AND DC-DC CONVERTER 审中-公开
    控制电路和直流 - 直流转换器

    公开(公告)号：US20150035509A1

    公开(公告)日：2015-02-05

    申请号：US14330016

    申请日：2014-07-14

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Jun KOYAMA ,  Kei TAKAHASHI ,  Takuro OHMARU

    IPC: H02M3/157

    CPC classification number: H02M3/157

    Abstract: To provide a control circuit in a DC-DC converter, which includes transistors with the same conductivity type. The control circuit generates a pulse signal (GS), and includes a hysteresis comparator, a logic unit, a digital-analog converter circuit, and a comparator. The hysteresis comparator converts a signal (FB) based on an output voltage of the DC-DC converter into a digital signal (comp). The logic unit generates, in accordance with the signal comp, a pulse width modulation signal (pwm) determining a pulse width of the signal GS. The logic unit also divides a reference clock signal to generate an m-bit (m is greater than or equal to 2) second digital signal. The digital-analog converter circuit converts the m-bit second digital signal into an analog signal to generate a 2m-level triangular wave signal. The comparator compares the signal pwm with the triangular wave signal to output the comparison result as the signal GS.

    Abstract translation: 在DC-DC转换器中提供一种控制电路，它包括具有相同导电类型的晶体管。 控制电路产生脉冲信号（GS），并且包括滞后比较器，逻辑单元，数模转换器电路和比较器。 滞后比较器将基于DC-DC转换器的输出电压的信号（FB）转换为数字信号（comp）。 逻辑单元根据信号comp产生确定信号GS的脉冲宽度的脉宽调制信号（pwm）。 逻辑单元还划分参考时钟信号以产生m位（m大于或等于2）的第二数字信号。 数模转换器电路将m位第二数字信号转换为模拟信号以产生2m级的三角波信号。 比较器将信号pwm与三角波信号进行比较，输出比较结果作为信号GS。

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