公开(公告)号：US20170222028A1

公开(公告)日：2017-08-03

申请号：US15493215

申请日：2017-04-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masami JINTYOU ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Suzunosuke HIRAISHI

IPC: H01L29/66 ,  H01L21/385 ,  H01L21/4757 ,  H01L29/786 ,  H01L21/441

CPC classification number: H01L27/1225 ,  H01L21/385 ,  H01L21/441 ,  H01L21/47573 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: To suppress change in electric characteristics and improve reliability of a semiconductor device including a transistor formed using an oxide semiconductor. A semiconductor device includes a transistor including a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, and a pair of electrodes. The gate electrode and the oxide semiconductor film overlap with each other. The oxide semiconductor film is located between the first insulating film and the second insulating film and in contact with the pair of electrodes. The first insulating film is located between the gate electrode and the oxide semiconductor film. An etching rate of a region of at least one of the first insulating film and the second insulating film is higher than 8 nm/min when etching is performed using a hydrofluoric acid.

公开(公告)号：US20150053971A1

公开(公告)日：2015-02-26

申请号：US14456069

申请日：2014-08-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akiharu MIYANAGA ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Motoki NAKASHIMA ,  Masahiro TAKAHASHI ,  Shunsuke ADACHI ,  Takuya HIROHASHI

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/24

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.

Abstract translation: 在使用包括氧化物半导体的晶体管的半导体器件中，电特性的变化被抑制并提高了可靠性。 半导体器件包括绝缘表面上的栅电极; 与所述栅电极重叠的氧化物半导体膜; 栅极绝缘膜，位于栅电极和氧化物半导体膜之间并与氧化物半导体膜接触; 与氧化物半导体膜的与栅极绝缘膜接触的表面的相反侧的表面接触的保护膜; 以及与氧化物半导体膜接触的一对电极。 通过电子自旋共振光谱测定的栅极绝缘膜或保护膜的自旋密度低于1×1018自旋/ cm3，优选为1×1017以上/ cm3以上，低于1×1018自旋/ cm3。

公开(公告)号：US20240321577A1

公开(公告)日：2024-09-26

申请号：US18668768

申请日：2024-05-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toshimitsu OBONAI ,  Yasuharu HOSAKA ,  Kenichi OKAZAKI ,  Masahiro TAKAHASHI ,  Tomonori NAKAYAMA ,  Tomosato KANAGAWA ,  Shunpei YAMAZAKI

IPC: H01L21/02 ,  C23C14/00 ,  C23C14/08 ,  C23C14/34 ,  H01L21/66

CPC classification number: H01L21/02554 ,  C23C14/081 ,  C23C14/086 ,  C23C14/087 ,  C23C14/34 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/02631 ,  H01L22/12 ,  C23C14/0036 ,  C23C14/08

Abstract: A metal oxide film with high electrical characteristics is provided. A metal oxide film with high reliability is provided. The metal oxide film contains indium, M (M is aluminum, gallium, yttrium, or tin), and zinc. In the metal oxide film, distribution of interplanar spacings d determined by electron diffraction by electron beam irradiation from a direction perpendicular to a film surface of the metal oxide film has a first peak and a second peak. The top of the first peak is positioned at greater than or equal to 0.25 nm and less than or equal to 0.30 nm, and the top of the second peak is positioned at greater than or equal to 0.15 nm and less than or equal to 0.20 nm. The distribution of the interplanar spacings d is obtained from a plurality of electron diffraction patterns of a plurality of regions of the metal oxide film. The electron diffraction is performed using an electron beam with a beam diameter of greater than or equal to 0.3 nm and less than or equal to 10 nm.

公开(公告)号：US20240014137A1

公开(公告)日：2024-01-11

申请号：US18370916

申请日：2023-09-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Toshimitsu OBONAI ,  Masami JINTYOU ,  Daisuke KUROSAKI

IPC: H01L29/66 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L29/7869

Abstract: A semiconductor device having favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, and a first conductive layer. The semiconductor layer includes an island-shaped top surface. The first insulating layer is provided in contact with a top surface and a side surface of the semiconductor layer. The first conductive layer is positioned over the first insulating layer and includes a portion overlapping with the semiconductor layer. In addition, the semiconductor layer includes a metal oxide, and the first insulating layer includes an oxide. The semiconductor layer includes a first region overlapping with the first conductive layer and a second region not overlapping with the first conductive layer. The first insulating layer includes a third region overlapping with the first conductive layer and a fourth region not overlapping with the first conductive layer. Furthermore, the second region and the fourth region contain phosphorus or boron.

公开(公告)号：US20220310517A1

公开(公告)日：2022-09-29

申请号：US17729306

申请日：2022-04-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Toshimitsu OBONAI ,  Masami JINTYOU ,  Daisuke KUROSAKI

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/263 ,  H01L21/265

Abstract: A semiconductor device having favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, and a first conductive layer. The semiconductor layer includes an island-shaped top surface. The first insulating layer is provided in contact with a top surface and a side surface of the semiconductor layer. The first conductive layer is positioned over the first insulating layer and includes a portion overlapping with the semiconductor layer. In addition, the semiconductor layer includes a metal oxide, and the first insulating layer includes an oxide. The semiconductor layer includes a first region overlapping with the first conductive layer and a second region not overlapping with the first conductive layer. The first insulating layer includes a third region overlapping with the first conductive layer and a fourth region not overlapping with the first conductive layer. Furthermore, the second region and the fourth region contain phosphorus or boron.

公开(公告)号：US20220127713A1

公开(公告)日：2022-04-28

申请号：US17431275

申请日：2020-02-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toshimitsu OBONAI ,  Yasuharu HOSAKA ,  Kenichi OKAZAKI ,  Masahiro TAKAHASHI ,  Tomonori NAKAYAMA ,  Tomosato KANAGAWA ,  Shunpei YAMAZAKI

IPC: C23C14/34 ,  C23C14/08 ,  H01L21/66

Abstract: A metal oxide film with high electrical characteristics is provided. A metal oxide film with high reliability is provided. The metal oxide film contains indium, M (M is aluminum, gallium, yttrium, or tin), and zinc. In the metal oxide film, distribution of interplanar spacings d determined by electron diffraction by electron beam irradiation from a direction perpendicular to a film surface of the metal oxide film has a first peak and a second peak. The top of the first peak is positioned at greater than or equal to 0.25 nm and less than or equal to 0.30 nm, and the top of the second peak is positioned at greater than or equal to 0.15 nm and less than or equal to 0.20 nm. The distribution of the interplanar spacings d is obtained from a plurality of electron diffraction patterns of a plurality of regions of the metal oxide film. The electron diffraction is performed using an electron beam with a beam diameter of greater than or equal to 0.3 nm and less than or equal to 10 nm.

公开(公告)号：US20210343869A1

公开(公告)日：2021-11-04

申请号：US17367677

申请日：2021-07-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yasutaka NAKAZAWA ,  Toshimitsu OBONAI

IPC: H01L29/786 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/66

Abstract: A semiconductor device with favorable electrical characteristics, a semiconductor device with stable electrical characteristics, or a highly reliable semiconductor device or display device is provided. A first insulating layer and a first conductive layer are stacked over a first region of a first metal oxide layer. A first layer is formed in contact with a second metal oxide layer and a second region of the first metal oxide layer that is not overlapped by the first insulating layer. Heat treatment is performed to lower the resistance of the second region and the second metal oxide layer. A second insulating layer is formed. A second conductive layer electrically connected to the second region is formed over the second insulating layer. Here, the first layer is formed to contain at least one of aluminum, titanium, tantalum, and tungsten.

公开(公告)号：US20180040722A1

公开(公告)日：2018-02-08

申请号：US15664353

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshimitsu OBONAI ,  Hironobu TAKAHASHI ,  Yasuharu HOSAKA ,  Masahiro WATANABE ,  Takuya HANDA ,  Yukinori SHIMA ,  Takashi HAMOCHI

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02359 ,  H01L21/02554 ,  H01L21/02631 ,  H01L21/6719 ,  H01L29/78648 ,  H01L29/7869

Abstract: Provided is a semiconductor device with favorable electrical characteristics. Provided is a semiconductor device with stable electrical characteristics. Provided is a manufacturing method of a semiconductor device with a high yield. The manufacturing method includes a first step of forming an insulating film over a substrate, a second step of transferring the substrate in an atmospheric atmosphere, a third step of heating the insulating film, and a fourth step of forming a metal oxide film. The third step and the fourth step are successively performed in an atmosphere where water vapor partial pressure is lower than water vapor partial pressure in the atmospheric air.

公开(公告)号：US20160343733A1

公开(公告)日：2016-11-24

申请号：US15226008

申请日：2016-08-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi OOTA ,  Noritaka ISHIHARA ,  Motoki NAKASHIMA ,  Yoichi KUROSAWA ,  Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA

IPC: H01L27/12 ,  H01L21/425 ,  H01L29/66 ,  H01L21/477

Abstract: To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.

公开(公告)号：US20160155803A1

公开(公告)日：2016-06-02

申请号：US14952459

申请日：2015-11-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masami JINTYOU ,  Yasutaka NAKAZAWA ,  Toshimitsu OBONAI ,  Yukinori SHIMA ,  Daisuke KUROSAKI

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/127 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: A change in electrical characteristics is inhibited and reliability is improved in a semiconductor device including an oxide semiconductor film. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, and a pair of electrodes over the oxide semiconductor film. The oxide semiconductor film includes a channel region and n-type regions in contact with the pair of electrodes. The channel region has fewer oxygen vacancies than the n-type regions.

Abstract translation: 在包括氧化物半导体膜的半导体器件中，电特性的变化受到抑制，可靠性提高。 半导体器件包括栅电极，栅电极上的栅极绝缘膜，栅极绝缘膜上的氧化物半导体膜，以及氧化物半导体膜上的一对电极。 氧化物半导体膜包括与该对电极接触的沟道区和n型区。 通道区域具有比n型区域少的氧空位。