-
21.发明申请公开(公告)号：US20140209952A1
公开(公告)日：2014-07-31
申请号：US14229713
申请日：2014-03-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Kyung Hee YE , Chang Youn Kim , Jin Cheol Shin , Joon Hee Lee , Jong Kyun You , Hong Chol Lim
CPC classification number: H01L33/46 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/387 , H01L33/42 , H01L33/44
Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.
Abstract translation: 一种高效率发光二极管，包括：位于支撑基板上的半导体堆叠，包括p型化合物半导体层，有源层和n型化合物半导体层; 设置在分隔所述p型化合物半导体层和有源层的开口中的绝缘层; 设置在绝缘层和p型化合物半导体层上的透明电极层; 覆盖所述透明电极层的反射绝缘层，以将来自所述有源层的光反射离开所述支撑基板; 覆盖反射绝缘层的p电极; 并且在n型化合物半导体层的顶部上形成n电极。 p电极通过绝缘层与透明电极层电连接。
-
公开(公告)号：US20140131729A1
公开(公告)日：2014-05-15
申请号：US14053098
申请日：2013-10-14
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jeong Hun HEO , Yeo Jin Yoon , Joo Won Choi , Joon Hee Lee , Chang Yeon Kim , Su Young Lee
IPC: H01L27/15
CPC classification number: H01L33/0075 , H01L27/156 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2933/0066 , H01L2924/00
Abstract: Exemplary embodiments of the present invention disclose a semiconductor device and a method of fabricating the same. The semiconductor device includes a gallium nitride substrate, a plurality of semiconductor stacks disposed on the gallium nitride substrate, and an insulation pattern disposed between the gallium nitride substrate and the plurality of semiconductor stacks, the insulation pattern insulating the semiconductor stacks from the gallium nitride substrate.
Abstract translation: 本发明的示例性实施例公开了一种半导体器件及其制造方法。 半导体器件包括氮化镓衬底，设置在氮化镓衬底上的多个半导体堆叠以及设置在氮化镓衬底和多个半导体堆叠之间的绝缘图案，该绝缘图案使半导体堆叠与氮化镓衬底绝缘 。
-
公开(公告)号：US20240372038A1
公开(公告)日：2024-11-07
申请号：US18773032
申请日：2024-07-15
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Joon Hee Lee
Abstract: A light-emitting diode includes a first conductive semiconductor layer, an upper insulating layer positioned on the first conductive semiconductor layer, a mesa including an active layer and a second conductive semiconductor layer and positioned under a certain region of the first conductive semiconductor layer, and first and second through-holes through which the first conductive semiconductor layer is exposed. The first through-holes are arranged in a region encompassed by the edge of the mesa. The second through-holes are arranged along the edge of the mesa so that some of the second through-holes are encompassed by the active layer and the second conductive semiconductor layer, respectively.
-
公开(公告)号：US20190148596A1
公开(公告)日：2019-05-16
申请号：US16246565
申请日：2019-01-14
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Ju Yong Park , Seong Gyu Jang , Kyu Ho Lee , Joon Hee Lee
Abstract: An ultraviolet light-emitting diode includes: a substrate; an n-type semiconductor layer located on the substrate; a mesa arranged on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer coming in contact with the n-type semiconductor layer; a p-ohmic contact layer coming in contact with the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa includes a main branch and a plurality of sub branches extending from the main branch, the n-ohmic contact layer encompasses the mesa and is interposed in an area between the sub branches, and the n-bump and the p-bump respectively cover the upper part and sides of the mesa. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.
-
公开(公告)号：US20190044027A1
公开(公告)日：2019-02-07
申请号：US15872900
申请日：2018-01-16
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Mi Hee Lee , Chang Yeon Kim , Ju Yong Park , Jong Kyun You , Joon Hee Lee
Abstract: Disclosed herein is a vertical type light emitting diode having a mesa including a groove. The light emitting diode includes: a support substrate; a first conductivity type semiconductor layer disposed on the support substrate; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer through the second conductivity type semiconductor layer and the active layer; a first electrode disposed between the second conductivity type semiconductor layer and the support substrate and including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.
-
Patent Agency Ranking
公开(公告)号：US20180323343A1
公开(公告)日：2018-11-08
申请号：US15969723
申请日：2018-05-02
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seong Kyu Jang , Ji Hyeon Jeong , Kyu Ho Lee , Joon Hee Lee
CPC classification number: H01L33/38 , H01L27/156 , H01L33/0025 , H01L33/06 , H01L33/08 , H01L33/145 , H01L33/20 , H01L33/32 , H01L33/387 , H01L33/405 , H01L33/44 , H01L33/62
Abstract: An ultraviolet light emitting diode is provided to comprise an n-type semiconductor layer disposed on a substrate; light emitting elements disposed on the n-type semiconductor layer, each comprising an active layer and a p-type semiconductor layer; an n-type ohmic contact layer contacting the n-type semiconductor layer around the micro light emitting elements; p-type ohmic contact layers contacting the p-type semiconductor layers, respectively; an n-bump electrically connecting to the n-type ohmic contact layer; and a p-bump electrically connected to the p-type ohmic contact layers, wherein each of the n-bump and the p-bump is disposed across over a plurality of micro light emitting elements. The micro light emitting elements may be arranged over a wide area of the substrate, and thus light output can be improved and a forward voltage may be lowered, in addition, the n-bump and the p-bump may be formed relatively widely.
-
公开(公告)号：US09960318B2
公开(公告)日：2018-05-01
申请号：US15288043
申请日：2016-10-07
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Gyun Kim , Joon Hee Lee , Ki Hyun Kim , Sung Su Son
CPC classification number: H01L33/145 , H01L33/10 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/44 , H01L33/46 , H01L2933/0016
Abstract: A light emitting diode includes a light emitting structure including first and second conductive type semiconductor layers, an active layer, a first electrode electrically connected to the first conductive type semiconductor layer, a current blocking layer disposed on a lower surface of the light emitting structure, and a second electrode electrically connected to the second conductive type semiconductor layer. The second electrode includes a first reflective metal layer adjoining the second conductive type semiconductor layer, and a second reflective metal layer covering a lower surface of the current blocking layer and a lower surface of the first reflective metal layer, and adjoining the second conductive type semiconductor layer. A contact resistance between the second reflective metal layer and the second conductive type semiconductor layer is higher than a contact resistance between the first reflective metal layer and the second conductive type semiconductor layer.
-
公开(公告)号：US09537045B2
公开(公告)日：2017-01-03
申请号：US14796421
申请日：2015-07-10
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jeong Hun Heo , Yeo Jin Yoon , Joo Won Choi , Joon Hee Lee , Chang Yeon Kim , Su Young Lee
CPC classification number: H01L33/0075 , H01L27/156 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2933/0066 , H01L2924/00
Abstract: A method of fabricating a semiconductor device includes forming an insulation pattern including a mask region and an open region on a gallium nitride substrate, growing gallium nitride semiconductor layers to cover the insulation pattern, and patterning the semiconductor layers to form a plurality of semiconductor stacks separated from each other, the plurality of semiconductor stacks being electrically isolated from the gallium nitride substrate by the insulation pattern.
Abstract translation: 制造半导体器件的方法包括在氮化镓衬底上形成包括掩模区域和开放区域的绝缘图案，生长氮化镓半导体层以覆盖绝缘图案，以及图案化半导体层以形成分离的多个半导体堆叠 所述多个半导体堆叠通过所述绝缘图案与所述氮化镓衬底电隔离。
-
公开(公告)号：US09337175B2
公开(公告)日：2016-05-10
申请号：US14229773
申请日：2014-03-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Won Cheol Seo , Joon Hee Lee , Jong Kyun You , Chang Youn Kim , Jin Cheul Shin , Hwa Mok Kim , Jang Woo Lee , Yeo Jin Yoon , Jong Kyu Kim
IPC: H01L25/075 , H01L27/15 , H01L33/62 , H01L33/00 , H01L33/46
CPC classification number: H01L33/60 , H01L25/0753 , H01L27/156 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
Abstract: A light emitting device and a method of fabricating the same. The light emitting device includes a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells includes a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.
Abstract translation: 发光器件及其制造方法。 发光器件包括衬底。 多个发光单元设置在基板的顶部上以彼此间隔开。 每个发光单元包括第一上半导体层，有源层和第二下半导体层。 反射金属层位于基板和发光单元之间。 防止反射金属层暴露于外部。
-
30.发明申请公开(公告)号：US20150243847A1
公开(公告)日：2015-08-27
申请号：US14694651
申请日：2015-04-23
Applicant: Seoul Viosys Co., Ltd.
Inventor： Chang Yeon KIM , Da Hye Kim , Hong Chul Lim , Joon Hee Lee , Jong Kyun You
CPC classification number: H01L33/382 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/46 , H01L2224/48463 , H01L2224/73265
Abstract: Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack.
Abstract translation: 本发明的示例性实施例涉及一种高效率发光二极管（LED）。 根据示例性实施例的LED包括衬底，布置在衬底上的半导体堆叠，其中半导体堆叠具有p型半导体层，有源层和n型半导体层，插入在衬底之间的第一金属层 半导体堆叠，与半导体堆叠欧姆接触的第一金属层，布置在半导体堆叠上的第一电极焊盘，从第一电极焊盘延伸的电极延伸部，其中电极延伸部具有接触n型 半导体层，插入在所述基板和所述半导体堆叠之间的第一绝缘层，其中所述第一绝缘层覆盖所述电极延伸部的接触区域下方的所述p型半导体层的表面区域，以及插入在所述第一绝缘层之间的第二绝缘层 电极焊盘和半导体堆叠。
-
-
-
-
-
-
-
-
-
Search Results
31
records
(took 0.024 seconds)
