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公开(公告)号：US20180254764A1
公开(公告)日：2018-09-06
申请号：US15797265
申请日：2017-10-30
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Tae Kyung LEE , Won HAN , Tae Yoon KIM , Jong Woon KIM , Moon Chul LEE , Chang Hyun LIM , Sang Kee YOON , Hwa Sun LEE , Dae Hun JEONG
CPC classification number: H03H9/174 , H03H3/02 , H03H9/02118 , H03H9/0504 , H03H9/173 , H03H9/547 , H03H2003/021 , H03H2003/023
Abstract: An acoustic resonator includes: a central portion; an extension portion extended outwardly of the central portion; a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on a substrate, in the central portion; and an insertion layer disposed below the piezoelectric layer in the extension portion, wherein the piezoelectric layer includes a piezoelectric portion disposed in the central portion, and a bent portion disposed in the extension portion and extended from the piezoelectric portion at an incline depending on a shape of the insertion layer.
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公开(公告)号：US20180062608A1
公开(公告)日：2018-03-01
申请号：US15647660
申请日：2017-07-12
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Tae Kyung LEE , Tae Yoon KIM , Dae Ho KIM , Chang Hyun LIM , Tae Hun LEE , Sang Kee YOON , Jong Woon KIM , Won HAN , Moon Chul LEE
IPC: H03H9/02 , H03H9/54 , H01L41/047 , H03H9/56
CPC classification number: H03H9/02015 , H01L41/047 , H03H3/02 , H03H9/02062 , H03H9/02118 , H03H9/02157 , H03H9/173 , H03H9/542 , H03H9/545 , H03H9/547 , H03H9/562 , H03H9/568 , H03H9/605 , H03H2003/021
Abstract: A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 Å or less.
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公开(公告)号：US20180054182A1
公开(公告)日：2018-02-22
申请号：US15635551
申请日：2017-06-28
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Tae Yoon KIM , Tae Kyung LEE , Sung Min CHO , Sang Kee YOON , Moon Chul LEE
CPC classification number: H03H9/173 , H03H9/02133 , H03H9/174
Abstract: A bulk acoustic wave resonator includes: a support part disposed on a substrate; a layer disposed on the support part, wherein an air cavity is formed between the support part, the substrate and the layer; and a frame extending along the layer, within the air cavity, and spaced apart from the support part.
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公开(公告)号：US20170179923A1
公开(公告)日：2017-06-22
申请号：US15085072
申请日：2016-03-30
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Ran Hee SHIN , Tae Kyung LEE , Sung HAN , Yun Sung KANG , Sung Sun KIM , Jin Suk SON , Jeong Suong YANG , Hwa Sun LEE , Eun Tae PARK
CPC classification number: H03H9/173 , H03H3/02 , H03H9/02015 , H03H9/02118 , H03H9/174 , H03H2003/021 , H03H2003/023
Abstract: An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part.
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公开(公告)号：US20160300996A1
公开(公告)日：2016-10-13
申请号：US15003045
申请日：2016-01-21
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Tae Kyung LEE , Sung HAN , Ran Hee SHIN , Hwa Sun LEE , Seung Joo SHIN
IPC: H03H9/54 , H03H9/17 , H01L41/047 , H03H9/13
CPC classification number: H01L41/0477 , H03H9/13 , H03H9/173 , H03H9/587 , H03H9/605
Abstract: In examples, there is provided a bulk acoustic wave resonator including: a substrate, a first electrode and a second electrode formed on the substrate, and a piezoelectric layer formed between the first electrode and the second electrode, wherein at least one of the first electrode and the second electrode is formed of an alloy including a molybdenum element. Additionally, such a bulk acoustic wave resonator may include an air cavity formed between the substrate and the first electrode.
Abstract translation: 在实施例中，提供了一种体声波谐振器，包括：基板，形成在基板上的第一电极和第二电极，以及形成在第一电极和第二电极之间的压电层，其中，第一电极 并且第二电极由包括钼元素的合金形成。 另外，这样的体声波谐振器可以包括在基板和第一电极之间形成的空气腔。
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Patent Agency Ranking
公开(公告)号：US20150220184A1
公开(公告)日：2015-08-06
申请号：US14267655
申请日：2014-05-01
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Jang Ho PARK , Beom Seok OH , Tae Kyung LEE
CPC classification number: H01Q1/22 , G06F3/044 , H01Q1/243 , H04M1/0266 , H04M2250/22
Abstract: Embodiments of the invention provide a touch sensor, including a window substrate including a central region and an edge region formed to enclose the central region, a bezel part formed in the edge region on a rear of the window substrate and including at least one bezel layer, an antenna pattern formed in the bezel part and transmitted or received to or from the outside by wireless communication, and a sensor module including an electrode pattern, which is formed on a base substrate and corresponds to the central region and formed on a plane different from the antenna pattern.
Abstract translation: 本发明的实施例提供了一种触摸传感器，包括：窗口基板，包括中心区域和形成为封闭中心区域的边缘区域;边框部分形成在窗口基板后部的边缘区域中，并且包括至少一个边框层 形成在边框部分中并通过无线通信传输或接收到外部的天线图案，以及包括电极图案的传感器模块，其形成在基底基板上并对应于中心区域并形成在不同的平面上 从天线图案。
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公开(公告)号：US20230350104A1
公开(公告)日：2023-11-02
申请号：US18101396
申请日：2023-01-25
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Tae Kyung LEE , Sang Kee YOON , Jin Woo YI , Joung Hun KIM , Jae Goon AUM
CPC classification number: G02B1/18 , G02B1/11 , G02B5/0221
Abstract: A lens includes a lens unit including an uneven surface structure, and an uneven layer formed on at least a portion of the uneven surface structure of the lens unit and comprising an uneven surface structure. The uneven surface structure of the lens unit and the uneven surface structure of the uneven layer have different shapes.
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公开(公告)号：US20230318562A1
公开(公告)日：2023-10-05
申请号：US18319603
申请日：2023-05-18
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Tae Kyung LEE , Je Hong KYOUNG , Sung Sun KIM , Jin Suk SON , Ran Hee SHIN , Hwa Sun LEE
CPC classification number: H03H9/02102 , H03H9/176 , H03H9/174 , H03H9/02031
Abstract: A bulk-acoustic wave resonator comprises a substrate, a resonant portion comprising a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate, and further comprising a center portion and an extension portion that is disposed along a periphery of the center portion, and an insertion layer that is disposed in the extension portion between the first electrode and the piezoelectric layer, and the insertion layer is formed of an aluminum alloy containing scandium (Sc).
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公开(公告)号：US20220209744A1
公开(公告)日：2022-06-30
申请号：US17315577
申请日：2021-05-10
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Tae Kyung LEE , Chan Hee PARK , Jae Goon AUM
Abstract: A bulk acoustic resonator filter includes: a series bulk acoustic resonator electrically connected, in series, between first and second ports through which a radio frequency (RF) signal passes; a second shunt bulk acoustic resonator, electrically shunt connected between the series bulk acoustic resonator and a ground and having a resonance frequency lower than that of the series bulk acoustic resonator; and a first shunt bulk acoustic resonator electrically connected to the second shunt bulk acoustic resonator in series and having a resonance frequency higher than that of the second shunt bulk acoustic resonator. One or both of the series bulk acoustic resonator and the first shunt bulk acoustic resonator includes a first electrode disposed above a substrate; a piezoelectric layer disposed on the first electrode; a second electrode disposed on the piezoelectric layer; and a trench formed in an upper surface or above the second electrode and recessed downwardly.
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公开(公告)号：US20220209737A1
公开(公告)日：2022-06-30
申请号：US17337899
申请日：2021-06-03
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Tae Kyung LEE , Jae Goon AUM
Abstract: A bulk-acoustic wave resonator includes: a substrate; and a resonator including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate. The piezoelectric layer is formed of aluminum nitride (AlN) containing scandium (Sc), the content of scandium in the piezoelectric layer is 10 wt % to 25 wt %, and the piezoelectric layer has a leakage current density of 1 μA/cm2 or less.
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