公开(公告)号：US12225800B2

公开(公告)日：2025-02-11

申请号：US17686934

申请日：2022-03-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Gon Kim ,  Shin Ae Jun ,  Deukseok Chung ,  Garam Park ,  Sung Hun Lee ,  Byoung Ki Choi

IPC: H10K59/38 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/02 ,  C09K11/08 ,  C09K11/88 ,  H10K50/13 ,  H10K59/124 ,  H10K102/00

Abstract: A display panel may include a light emitting panel, and a color conversion panel. The light emitting panel is configured to emit incident light including a first light and a second light, a luminescent peak wavelength of the first light may be greater than or equal to about 450 nm and less than or equal to about 480 nm and a luminescent peak wavelength of the second light may be greater than or equal to about 500 nm and less than or equal to about 580 nm. The color conversion panel includes a color conversion layer including a conversion region, and optionally, a partition wall defining each region of the color conversion panel. The color conversion region includes a first region corresponding to a red pixel, and the first region include a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix, and in the UV-Vis absorption spectrum, an absorbance ratio at a wavelength of 520 nm with respect to a wavelength of 350 nm may be greater than or equal to about 0.04:1.

公开(公告)号：US20240215250A1

公开(公告)日：2024-06-27

申请号：US18340419

申请日：2023-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seyun KIM ,  Jooheon Kang ,  Yumin Kim ,  Garam Park ,  Hyunjae Song ,  Dongho Ahn ,  Seungyeul Yang ,  Myunghun Woo ,  Jinwoo Lee ,  Seungdam Hyun

IPC: H10B43/35 ,  G11C16/04 ,  H10B43/10 ,  H10B43/27

CPC classification number: H10B43/35 ,  G11C16/0483 ,  H10B43/10 ,  H10B43/27

Abstract: A memory device including the vertical stack structure includes a gate electrode, a resistance change layer, a channel between the gate electrode and the resistance change layer, and an island structure between the resistance change layer and the channel and in contact with the resistance change layer and the channel, and a gate insulating layer between the gate electrode and the channel.

公开(公告)号：US11958998B2

公开(公告)日：2024-04-16

申请号：US17308333

申请日：2021-05-05

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung Display Co., Ltd. ,  SAMSUNG SDI CO., LTD.

Inventor： Ha Il Kwon ,  Tae Gon Kim ,  Shang Hyeun Park ,  Eun Joo Jang ,  Shin Ae Jun ,  Garam Park

IPC: C09K11/02 ,  C08K3/16 ,  C08K3/30 ,  C08K5/09 ,  C08K5/37 ,  C08K9/04 ,  C09K11/08 ,  C09K11/56 ,  C09K11/62 ,  C09K11/88 ,  G02F1/13357 ,  H01L33/50 ,  G02F1/1335

CPC classification number: C09K11/02 ,  C08K3/16 ,  C08K3/30 ,  C08K9/04 ,  C09K11/562 ,  G02F1/1336 ,  C08K2003/168 ,  C08K2003/3036 ,  G02F1/133614

Abstract: A composition including a plurality of quantum dots; a binder polymer; a thiol compound having at least two thiol groups; a polyvalent metal compound; a polymerizable monomer having a carbon-carbon double bond; a photoinitiator; and a solvent.

公开(公告)号：US20240065000A1

公开(公告)日：2024-02-22

申请号：US18169436

申请日：2023-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yumin Kim ,  Jooheon Kang ,  Sunho Kim ,  Seyun Kim ,  Garam Park ,  Hyunjae Song ,  Dongho Ahn ,  Seungyeul Yang ,  Myunghun Woo ,  Jinwoo Lee

IPC: H10B63/00 ,  G11C13/00 ,  G06N3/063

CPC classification number: H10B63/34 ,  G11C13/0007 ,  G11C13/003 ,  H10B63/845 ,  G06N3/063 ,  G11C2213/71 ,  G11C2213/75 ,  G11C2213/79

Abstract: Provided are a nonvolatile memory device and an operating method thereof. The nonvolatile memory device may include a conductive pillar, a resistance change layer surrounding a side surface of the conductive pillar, a semiconductor layer surrounding a side surface of the resistance change layer, a gate insulating layer surrounding a side surface of the semiconductor layer, and a plurality of insulating patterns and a plurality of gate electrodes alternately arranged along a surface of the gate insulating layer. The plurality of insulating patterns and the plurality of gate electrodes may surround a side surface of the gate insulating layer.

公开(公告)号：US11142685B2

公开(公告)日：2021-10-12

申请号：US16245544

申请日：2019-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Nayoun Won ,  Sungwoo Hwang ,  Eun Joo Jang ,  Soo Kyung Kwon ,  Yong Wook Kim ,  Jihyun Min ,  Garam Park ,  Shang Hyeun Park ,  Hyo Sook Jang ,  Shin Ae Jun ,  Yong Seok Han

IPC: H01L51/50 ,  C09K11/08 ,  C08L57/10 ,  G02F1/13357 ,  H01L27/32 ,  C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  C09K11/88 ,  H05B33/14 ,  B82Y40/00 ,  B82Y20/00 ,  G02F1/1335

Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.

公开(公告)号：US11021650B2

公开(公告)日：2021-06-01

申请号：US15672608

申请日：2017-08-09

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung Display Co., Ltd. ,  SAMSUNG SDI CO., LTD.

Inventor： Ha Il Kwon ,  Tae Gon Kim ,  Shang Hyeun Park ,  Eun Joo Jang ,  Shin Ae Jun ,  Garam Park

IPC: C09K11/02 ,  C09K11/56 ,  C08K3/30 ,  C08K9/04 ,  C08K3/16 ,  G02F1/13357 ,  G02F1/1335

Abstract: A composition including a plurality of quantum dots; a binder polymer; a thiol compound having at least two thiol groups; a polyvalent metal compound; a polymerizable monomer having a carbon-carbon double bond; a photoinitiator; and a solvent.

公开(公告)号：US11011672B2

公开(公告)日：2021-05-18

申请号：US16786004

申请日：2020-02-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Garam Park ,  Tae Hyung Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Shin Ae Jun ,  Yongwook Kim ,  Taekhoon Kim ,  Jihyun Min ,  Yuho Won

IPC: H01L33/04 ,  C09K11/02 ,  C09K11/61 ,  C09K11/70 ,  C09K11/88 ,  H01L33/24 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/34

Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.

公开(公告)号：US10074770B2

公开(公告)日：2018-09-11

申请号：US15386512

申请日：2016-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Garam Park ,  Tae Hyung Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Shin Ae Jun ,  Yongwook Kim ,  Taekhoon Kim ,  Jihyun Min ,  Yuho Won

IPC: H01L29/06 ,  H01L33/04 ,  H01L33/24 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/34 ,  C09K11/02 ,  C09K11/61 ,  C09K11/70 ,  C09K11/88

CPC classification number: H01L33/04 ,  C09K11/025 ,  C09K11/615 ,  C09K11/70 ,  C09K11/883 ,  H01L33/24 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/34

Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.