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    SPIN-TORQUE OSCILLATOR BASED ON EASY-CONE ANISOTROPY
    22.
    发明申请
    SPIN-TORQUE OSCILLATOR BASED ON EASY-CONE ANISOTROPY 有权

    公开(公告)号：US20170149387A1

    公开(公告)日：2017-05-25

    申请号：US15067009

    申请日：2016-03-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dmytro Apalkov ,  Roman Chepulskyy ,  Vladimir Nikitin

    IPC: H03B15/00

    CPC classification number: H03B15/006 ,  G11C11/16 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

    Abstract: A spin-torque oscillator includes: a driving reference layer having a fixed magnetization; a nonmagnetic spacer layer; and a free layer having a changeable magnetization exhibiting an easy-cone magnetic anisotropy, the nonmagnetic spacer layer being between the driving reference layer and the free layer, a magnetic anisotropy energy of the free layer having a local maximum along an axis, a local minimum at an angle from the axis, and a global maximum different from the local maximum, the angle being greater than zero degrees, wherein the spin-torque oscillator is configured such that the changeable magnetization of the free layer precesses around the axis.

    METHOD AND SYSTEM FOR REMOVING BORON FROM MAGNETIC JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MEMORY APPLICATIONS
    23.
    发明申请
    METHOD AND SYSTEM FOR REMOVING BORON FROM MAGNETIC JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MEMORY APPLICATIONS 有权
    用于从转子扭转记忆体应用中可用的磁性结移除硼的方法和系统

    公开(公告)号：US20160197270A1

    公开(公告)日：2016-07-07

    申请号：US14981107

    申请日：2015-12-28

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Robert Beach ,  Roman Chepulskyy ,  Dustin William Erickson ,  Vladimir Nikitin

    IPC: H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02

    CPC classification number: H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: A method provides a magnetic junction having a top and sides. A first magnetic layer, a nonmagnetic spacer layer and a second magnetic layer are deposited. The nonmagnetic spacer layer is between the first and second magnetic layers. A free layer is one of the magnetic layers. A reference layer is the other of the magnetic layers. The second magnetic layer includes an amorphous magnetic layer having nonmagnetic constituent(s) that are glass-formming. An anneal is performed in a gas having an affinity for the nonmagnetic constituent(s). The gas includes at least one of first and second gases. The first gas forms a gaseous compound with the nonmagnetic constituent(s) The second gas forms a solid compound with the nonmagnetic constituent(s). The second gas is usable if the anneal is performed after the magnetic junction has been defined. The solid compound is at least on the sides of the magnetic junction.

    Abstract translation: 一种方法提供具有顶部和侧面的磁结。 沉积第一磁性层，非磁性间隔层和第二磁性层。 非磁性间隔层位于第一和第二磁性层之间。 自由层是磁性层之一。 参考层是另一个磁性层。 第二磁性层包括具有玻璃形成的非磁性成分的非晶磁性层。 在对非磁性成分具有亲和性的气体中进行退火。 气体包括第一和第二气体中的至少一种。 第一气体与非磁性成分形成气态化合物第二气体与非磁性成分形成固体化合物。 如果在定义了磁性结后进行退火，则可以使用第二种气体。 固体化合物至少在磁性结的两侧。

    Method and system for providing a thermally assisted spin transfer torque magnetic device including smart thermal barriers
    24.
    发明授权
    Method and system for providing a thermally assisted spin transfer torque magnetic device including smart thermal barriers 有权
    用于提供包括智能热障的热辅助旋转传递扭矩磁性装置的方法和系统

    公开(公告)号：US09384811B2

    公开(公告)日：2016-07-05

    申请号：US14559536

    申请日：2014-12-03

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Dmytro Apalkov ,  Roman Chepulskyy

    IPC: G11C11/15 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08

    CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08

    Abstract: A magnetic device usable in electronic devices is described. The magnetic device includes a magnetic junction and at least one smart thermal barrier that is thermally coupled with the magnetic junction. The magnetic junction includes at least one reference layer, at least one nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer(s) are between the reference layer(s) and the free layer. The free layer is switchable between stable magnetic states when a write current passed through the magnetic junction. The smart thermal barrier has a low heat conductance below a transition temperature range, and a high heat conductance above the transition temperature range.

    Abstract translation: 描述可用于电子设备的磁性装置。 磁性装置包括磁结和至少一个与磁结热耦合的智能热障。 磁结包括至少一个参考层，至少一个非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 当写入电流通过磁性结时，自由层可在稳定的磁状态之间切换。 智能隔热板具有低于过渡温度范围的低导热系数，高于过渡温度范围的高导热系数。

    Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions
    25.
    发明授权
    Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions 有权
    具有插入层的磁结和使用磁结的磁存储器

    公开(公告)号：US09130155B2

    公开(公告)日：2015-09-08

    申请号：US14048329

    申请日：2013-10-08

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Roman Chepulskyy ,  Xueti Tang ,  Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi

    IPC: H01L43/08 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12

    CPC classification number: H01L43/10 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  G11C11/5607 ,  H01L43/08 ,  H01L43/12

    Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. A portion of the magnetic junction includes at least one magnetic substructure. The magnetic substructure includes at least one Fe layer and at least one nonmagnetic insertion layer. The at least one Fe layer shares at least one interface with the at least one nonmagnetic insertion layer. Each of the at least one nonmagnetic insertion layer consists of at least one of W, I, Hf, Bi, Zn, Mo, Ag, Cd, Os and In.

    Abstract translation: 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁结包括参考层，非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。 磁结的一部分包括至少一个磁性子结构。 磁性亚结构包括至少一个Fe层和至少一个非磁性插入层。 所述至少一个Fe层与所述至少一个非磁性插入层共享至少一个界面。 所述至少一个非磁性插入层中的每一个由W，I，Hf，Bi，Zn，Mo，Ag，Cd，Os和In中的至少一种构成。

    METHOD AND SYSTEM FOR PROVIDING AN ENGINEERED MAGNETIC LAYER INCLUDING HEUSLER LAYERS AND AN AMORPHOUS INSERTION LAYER
    26.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING AN ENGINEERED MAGNETIC LAYER INCLUDING HEUSLER LAYERS AND AN AMORPHOUS INSERTION LAYER 有权
    用于提供工程磁层的方法和系统，包括高分子层和非晶层插入层

    公开(公告)号：US20150162378A1

    公开(公告)日：2015-06-11

    申请号：US14478963

    申请日：2014-09-05

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Matthew J. Carey ,  Keith Chan ,  Roman Chepulskyy

    IPC: H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

    CPC classification number: H01L43/12 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. At least one of the free and pinned layers includes at least one engineered Heusler structure having a first magnetic layer, a second magnetic layer and an amorphous layer between the magnetic layers. At least one of the first and second magnetic layer(s) is a Heusler layer. The first magnetic layer's perpendicular magnetic anisotropy energy (PMAE) exceeds is out-of-plane demagnetization energy. The second magnetic layer's PMAE exceeds its out-of-plane demagnetization energy. The free layer and/or the pinned layer has a PMAE greater than an out-of-plane demagnetization energy. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

    Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁性结包括自由层，被钉扎层和位于游离层和被钉扎层之间的非磁性间隔层。 至少一个自由层和被钉扎层包括至少一个设计的Heusler结构，其具有第一磁性层，第二磁性层和位于磁性层之间的非晶层。 第一和第二磁性层中的至少一个是Heusler层。 第一磁性层的垂直磁各向异性能（PMAE）超过了平面外退磁能。 第二磁性层的PMAE超过其平面外退磁能。 自由层和/或被钉扎层具有大于面外去磁能的PMAE。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。

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