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    CLOCK CONTROL IN SEMICONDUCTOR SYSTEM
    21.
    发明申请
    CLOCK CONTROL IN SEMICONDUCTOR SYSTEM 审中-公开

    公开(公告)号：US20190115904A1

    公开(公告)日：2019-04-18

    申请号：US15988064

    申请日：2018-05-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： YONG HWAN KIM ,  Wook Kim ,  Ji Youn Kim

    IPC: H03K3/03 ,  H03K19/00 ,  H03K19/003 ,  G06F1/08

    Abstract: Clock generation and control in a semiconductor system having process, voltage and temperature (PVT) variation. A semiconductor device may include at least first and second ring oscillators, each disposed at locations respectively closest to first and second logic circuits of an operation circuit, and generating first and second oscillating signals. A detecting circuit is configured to perform a predetermined logic operation on the first oscillating signal and the second oscillating signal to generate a first clock signal. A calibration circuit is configured to receive the first clock signal from the detecting circuit and perform a delay control on each of the first ring oscillator and the second ring oscillator to generate a second clock signal for operating the operation circuit.

    SEMICONDUCTOR PROCESS MODELING SYSTEM AND METHOD
    26.
    发明申请
    SEMICONDUCTOR PROCESS MODELING SYSTEM AND METHOD 有权

    公开(公告)号：US20230010252A1

    公开(公告)日：2023-01-12

    申请号：US17700825

    申请日：2022-03-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Shigenobu Maeda ,  Wook Kim ,  Hongsik Kim ,  Heejun Kim ,  Seyoung Park ,  Seongjin Yoo ,  Minhong Yun ,  Daehan Han

    IPC: G06F30/398 ,  G06F30/27

    Abstract: Provided is a semiconductor process modeling system. The semiconductor process modeling system includes a preprocessing component configured to generate tensor data from raw data obtained from semiconductor manufacturing equipment, wherein, when the raw data is expressed as a raw matrix representing values of a plurality of process parameters for each of a plurality of wafers, at least one element of the raw matrix is omitted, when the tensor data is expressed as a tensor matrix representing values of a plurality of preprocessed process parameters for each of the plurality of wafers, the number of omitted elements of the tensor matrix is less than the number of omitted elements of the raw matrix, and the preprocessing component is configured to generate the tensor data by modifying the raw data based on at least one of characteristics of the semiconductor manufacturing equipment and characteristics of the plurality of process parameters.

    METHOD OF DYNAMIC THERMAL MANAGEMENT OF ELECTRONIC DEVICE
    28.
    发明申请
    METHOD OF DYNAMIC THERMAL MANAGEMENT OF ELECTRONIC DEVICE 有权

    公开(公告)号：US20210405670A1

    公开(公告)日：2021-12-30

    申请号：US17471378

    申请日：2021-09-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yun-Hyeok Im ,  Myung-Kyoon Yim ,  Wook Kim ,  Kyoung-Min Lee ,  Kyung-Soo Lee

    IPC: G05D23/19 ,  H05K7/20 ,  G01K13/00 ,  G06F1/20

    Abstract: To dynamically manage a temperature of an electronic device, a local temperature is provided by measuring a temperature of a local spot in the electronic device and a reference temperature is provided by measuring a temperature of a reference spot in the electronic device where the reference spot and the local spot are thermally coupled. A target temperature corresponding to a limit value of the reference temperature is adjusted based on the local temperature and a power level of the electronic device is controlled based on the same target temperature. The target temperature may be set to a relatively high value to secure performance of the electronic device when the local temperature is relatively low. Alternatively, the target temperature may be set to a relatively low value to pursue stability of the electronic device when the local temperature is relatively high.

    Clock control in semiconductor system
    30.
    发明授权
    Clock control in semiconductor system 有权

    公开(公告)号：US10972080B2

    公开(公告)日：2021-04-06

    申请号：US16865502

    申请日：2020-05-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yong Hwan Kim ,  Wook Kim ,  Ji Youn Kim

    IPC: H03K3/03 ,  H03K3/011 ,  G06F1/08 ,  H03K19/00 ,  H03K19/003 ,  G06F1/324

    Abstract: Clock generation and control in a semiconductor system having process, voltage and temperature (PVT) variation. A semiconductor device may include at least first and second ring oscillators, each disposed at locations respectively closest to first and second logic circuits of an operation circuit, and generating first and second oscillating signals. A detecting circuit is configured to perform a predetermined logic operation on the first oscillating signal and the second oscillating signal to generate a first clock signal. A calibration circuit is configured to receive the first clock signal from the detecting circuit and perform a delay control on each of the first ring oscillator and the second ring oscillator to generate a second clock signal for operating the operation circuit.

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