公开(公告)号：US20100041213A1

公开(公告)日：2010-02-18

申请号：US12539477

申请日：2009-08-11

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L21/20 ,  C23C16/458 ,  C23C16/455

CPC classification number: H01L21/02521 ,  C23C16/45551 ,  H01L21/4814

Abstract: A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.

Abstract translation: 气相沉积反应器包括填充有第一材料的腔室和腔室中的至少一个反应模块。 反应模块可以被配置为使得基板通过反应模块通过基板和反应模块之间的相对运动。 反应模块可以包括用于将第二材料注入基底的注射单元。 一种用于形成薄膜的方法包括将基板定位在室中，填充室中的第一材料，相对于室中的反应模块移动基板，以及在基板通过反应模块时将第二材料注入到基板。

公开(公告)号：US20180290171A1

公开(公告)日：2018-10-11

申请号：US15942205

申请日：2018-03-30

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: B05D1/02 ,  B05D3/14 ,  B05B7/16

Abstract: Embodiments relate to surface treating a substrate, spraying precursor onto the substrate using supercritical carrier fluid, and post-treating the substrate sprayed with the precursor to form a layer with nanometer thickness of material on the substrate. A spraying assembly for spraying the precursor includes one or more spraying modules and one or more radical injectors at one or more sides of the spraying module. A differential spread mechanism is provided between the spraying module and the radical injectors to inject spread gas that isolates the sprayed precursor and radicals generated by the radical injectors. As relative movement between the substrate and the spraying assembly is made, portions of the substrate is exposed to first radicals, sprayed with precursors either one of the spraying modules or both spraying modules using supercritical carrier fluid, and then exposed to second radicals again.

公开(公告)号：US20120302071A1

公开(公告)日：2012-11-29

申请号：US13572555

申请日：2012-08-10

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L21/31

CPC classification number: H01L21/76224 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/0262 ,  H01L21/3141 ,  H01L21/31604

Abstract: A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.

Abstract translation: 通过在具有凹部的基板上形成第一材料层来制造基板结构，使用与第一材料反应的第二材料从基板的除了凹部的部分除去第一材料层，并从 所述第一材料层使用与所述第一材料反应的第三材料。 制造器件的方法可以包括形成衬底结构的方法。

公开(公告)号：US20120301632A1

公开(公告)日：2012-11-29

申请号：US13563611

申请日：2012-07-31

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/50

CPC classification number: C23C16/45538 ,  C23C16/06 ,  C23C16/34 ,  C23C16/45517 ,  C23C16/45523 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/50 ,  C23C16/545

Abstract: A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.

Abstract translation: 使用由等离子体产生的自由基形成薄膜的方法可包括使用等离子体产生反应物前体的自由基; 通过将衬底暴露于反应物前体的自由基和源前体的混合物，在衬底上形成第一薄膜; 将基底暴露于源前体; 以及通过将所述衬底暴露于所述反应物前体和所述源前体的自由基的混合物而在所述衬底上形成第二薄膜。 由于在第一薄膜的形成和第二薄膜的形成之间将基板暴露于源极前体，因此可以提高沉积速率。

公开(公告)号：US20120213947A1

公开(公告)日：2012-08-23

申请号：US13372290

申请日：2012-02-13

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/44 ,  H05H1/24 ,  C23C16/04

CPC classification number: C23C16/045 ,  C23C16/403 ,  C23C16/45551

Abstract: Embodiments relate to depositing a layer of material on a permeable substrate by passing the permeable substrate between a set of reactors. The reactors may inject source precursor, reactant precursor, purge gas or a combination thereof onto the permeable substrate as the permeable substrate passes between the reactors. Part of the gas injected by a reactor penetrates the permeable substrate and is discharged by the other reactor. The remaining gas injected by the reactor moves in parallel to the surface of the permeable substrate and is discharged via an exhaust portion formed on the same reactor.

Abstract translation: 实施例涉及通过在一组反应器之间通过可渗透基底将一层材料沉积在可渗透基底上。 当可渗透的基底通过反应器之前，反应器可将源前体，反应物前体，吹扫气体或其组合注入到可渗透基底上。 由反应器注入的气体的一部分穿透可渗透的基底并被另一个反应器排出。 由反应器喷射的剩余气体平行于可渗透基底的表面移动，并经由形成在同一反应器上的排气部排出。

公开(公告)号：US20120207948A1

公开(公告)日：2012-08-16

申请号：US13369717

申请日：2012-02-09

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/455 ,  C23C16/50

CPC classification number: C23C16/513 ,  C23C16/308 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45542 ,  C23C16/45551

Abstract: Performing atomic layer deposition (ALD) using radicals of a mixture of nitrogen compounds to increase the deposition rate of a layer deposited on a substrate. A mixture of nitrogen compound gases is injected into a radical reactor. Plasma of the compound gas is generated by applying voltage across two electrodes in the radical reactor to generate radicals of the nitrogen compound gases. The radicals are injected onto the surface of a substrate previously injected with source precursor. The radicals function as a reactant precursor and deposit a layer of material on the substrate.

Abstract translation: 使用氮化合物的混合物的自由基进行原子层沉积（ALD），以增加沉积在基底上的层的沉积速率。 将氮化合物气体的混合物注入自由基反应器中。 通过在自由基反应器中的两个电极上施加电压以产生氮化合物气体的自由基来产生复合气体的等离子体。 将基团注入预先注入源前体的基底的表面上。 该基团用作反应物前体并在衬底上沉积一层材料。

公开(公告)号：US20120125258A1

公开(公告)日：2012-05-24

申请号：US13295012

申请日：2011-11-11

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/50

CPC classification number: C23C16/45551 ,  C23C16/45536 ,  H01J37/32376 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/32752 ,  H01J37/32807

Abstract: An elongated reactor assembly in a deposition device for performing atomic layer deposition (ALD) on a large substrate. The elongated reactor assembly includes one or more injectors and/or radical reactors. Each injector or radical reactor injects a gas or radicals onto the substrate as the substrate passes the injector or radical reactor as part of the ALD process. Each injector or radical reactor includes a plurality of sections where at least two sections have different cross sectional configurations. By providing different sections in the injector or radical reactor, the injector or radical reactor may inject the gas or the radicals more uniformly over the substrate. Each injector or radical reactor may include more than one outlet for discharging excess gas or radicals outside the deposition device.

Abstract translation: 用于在大型衬底上进行原子层沉积（ALD）的沉积装置中的细长反应器组件。 细长的反应器组件包括一个或多个注射器和/或自由基反应器。 当基板作为ALD过程的一部分通过注射器或自由基反应器时，每个注射器或自由基反应器将气体或自由基注入到基底上。 每个喷射器或自由基反应器包括多个部分，其中至少两个部分具有不同的横截面构造。 通过在注射器或自由基反应器中提供不同的部分，注射器或自由基反应器可以将气体或自由基更均匀地注入基底上。 每个注射器或自由基反应器可以包括用于排出沉积装置外部的多余气体或自由基的多于一个的出口。

公开(公告)号：US20120027953A1

公开(公告)日：2012-02-02

申请号：US13190104

申请日：2011-07-25

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/455 ,  C23C16/50

CPC classification number: C23C16/45551 ,  C23C16/45536 ,  C23C16/54

Abstract: A rotating reactor assembly includes an injector rotor comprising a channel extending in a direction parallel to a rotational axis of the injector rotor and at least one injection hole connected to the channel; and an intake port through which a material is introduced. As the injector rotor rotates, the channel is timely and/or periodically connected to the intake port such that the material is injected to a substrate through the at least one injection hole.

Abstract translation: 旋转反应器组件包括喷射器转子，其包括在平行于喷射器转子的旋转轴线的方向上延伸的通道和连接到通道的至少一个喷射孔; 以及引入材料的进气口。 当喷射器转子旋转时，通道及时地和/或周期性地连接到进气口，使得材料通过至少一个喷射孔喷射到基底。

公开(公告)号：US20100215871A1

公开(公告)日：2010-08-26

申请号：US12709763

申请日：2010-02-22

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/50

CPC classification number: C23C16/45538 ,  C23C16/06 ,  C23C16/34 ,  C23C16/45517 ,  C23C16/45523 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/50 ,  C23C16/545

Abstract: A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.

Abstract translation: 使用由等离子体产生的自由基形成薄膜的方法可包括使用等离子体产生反应物前体的自由基; 通过将衬底暴露于反应物前体的自由基和源前体的混合物，在衬底上形成第一薄膜; 将基底暴露于源前体; 以及通过将所述衬底暴露于所述反应物前体和所述源前体的自由基的混合物而在所述衬底上形成第二薄膜。 由于在第一薄膜的形成和第二薄膜的形成之间将基板暴露于源极前体，因此可以提高沉积速率。

公开(公告)号：US20100037824A1

公开(公告)日：2010-02-18

申请号：US12539142

申请日：2009-08-11

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/06

CPC classification number: C23C16/513 ,  H01J37/3244 ,  H01J37/32449 ,  H05H1/42 ,  H05H1/48 ,  H05H2001/481

Abstract: A plasma reactor includes a plasma generator configured to spray plasma, and an injector located adjacent to the plasma generator and configured to inject a precursor to the plasma sprayed from the plasma injector. The injector includes a platform having an opening, at least one injection hole formed in the platform to inject the precursor to the opening, and a channel formed in the platform to connect with the at least one injection hole to carry the precursor. The plasma reactor may allow supply of the plasma together with the precursor. In case corona plasma is used where a vacuum state is not needed, a wider process window may be ensured.

Abstract translation: 等离子体反应器包括被配置为喷射等离子体的等离子体发生器和位于等离子体发生器附近的喷射器，并配置成将前体喷射到等离子体喷射器喷射的等离子体上。 喷射器包括具有开口的平台，在平台中形成的至少一个喷射孔以将前体喷射到开口，以及形成在平台中的与至少一个喷射孔连接以承载前体的通道。 等离子体反应器可以允许将等离子体与前体一起供应。 在不需要真空状态的情况下使用电晕等离子体的情况下，可以确保更宽的工艺窗口。