公开(公告)号：US20110186868A1

公开(公告)日：2011-08-04

申请号：US12886911

申请日：2010-09-21

申请人： Gen Watari ,  Satoshi Shimizu ,  Hiroaki Oshio ,  Tatsuo Tonedachi ,  Kazuhisa Iwashita ,  Tetsuro Komatsu ,  Teruo Takeuchi ,  Iwao Matsumoto

发明人： Gen Watari ,  Satoshi Shimizu ,  Hiroaki Oshio ,  Tatsuo Tonedachi ,  Kazuhisa Iwashita ,  Tetsuro Komatsu ,  Teruo Takeuchi ,  Iwao Matsumoto

IPC分类号： H01L33/50 ,  H01L33/62

CPC分类号： H01L24/49 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01041 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/01063 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/48227 ,  H01L2224/05599 ,  H01L2224/4554

摘要： According to one embodiment, an LED package includes a first and a second lead frame, an LED chip and a resin body. The first and second lead frames are apart from each other. The LED chip is provided above the first and second lead frames, and has one terminal connected to the first lead frame and another terminal connected to the second lead frame. The wire connects the one terminal to the first lead frame. The resin body covers the first and second lead frames, the LED chip, and the wire. The first lead frame includes a base portion and a plurality of extending portions. As viewed from above, a bonding position of the wire is located inside one of polygonal regions connecting between roots of the two or more of the extending portions. An appearance of the resin body is a part of an appearance of the LED package.

摘要翻译： 根据一个实施例，LED封装包括第一和第二引线框架，LED芯片和树脂体。 第一和第二引线框彼此分开。 LED芯片设置在第一和第二引线框架的上方，并且具有连接到第一引线框架的一个端子和连接到第二引线框架的另一个端子。 线将一个端子连接到第一引线框架。 树脂体覆盖第一和第二引线框架，LED芯片和导线。 第一引线框架包括基部和多个延伸部分。 从上方观察，线的接合位置位于连接两个或更多个延伸部分的根部的多边形区域之一内。 树脂体的外观是LED封装的外观的一部分。

公开(公告)号：US07991120B2

公开(公告)日：2011-08-02

申请号：US12394607

申请日：2009-02-27

申请人： Masahiko Okunuki ,  Osamu Tsujii ,  Satoshi Shimizu ,  Takashi Ogura

发明人： Masahiko Okunuki ,  Osamu Tsujii ,  Satoshi Shimizu ,  Takashi Ogura

IPC分类号： H01J35/08

CPC分类号： A61B6/405 ,  A61B6/00 ,  A61B6/4007 ,  A61B6/4028 ,  A61B6/4035 ,  A61B6/4233 ,  A61B6/482 ,  H01J35/065 ,  H01J35/08 ,  H01J2235/062 ,  H01J2235/068 ,  H01J2235/087

摘要： A multi X-ray generating apparatus which has a plurality of electron sources arranged two-dimensionally and targets arranged at positions opposite to the electron sources includes a multi electron source which includes a plurality of electron sources and outputs electrons from driven electron sources by selectively driving a plurality of electron sources in accordance with supplied driving signals, and a target unit which includes a plurality of targets which generate X-rays in accordance with irradiation of electrons output from the multi electron source and outputs X-rays with different radiation qualities in accordance with the generation locations of X-rays. The generation locations and radiation qualities of X-rays from the target unit are controlled by selectively driving the electron sources of the multi electron source.

摘要翻译： 具有二维布置的多个电子源和布置在与电子源相对的位置的目标的多X射线产生装置包括多电子源，其包括多个电子源，并通过选择性驱动从驱动电子源输出电子 根据提供的驱动信号的多个电子源，以及目标单元，其包括根据从多电子源输出的电子的照射产生X射线的多个靶，并输出具有不同辐射质量的X射线 与X射线的发生位置。 通过选择性地驱动多电子源的电子源来控制来自目标单元的X射线的产生位置和辐射质量。

公开(公告)号：US20110163821A1

公开(公告)日：2011-07-07

申请号：US13048334

申请日：2011-03-15

申请人： Hiroyuki Souma ,  Seigo Fukuchi ,  Satoshi Shimizu

发明人： Hiroyuki Souma ,  Seigo Fukuchi ,  Satoshi Shimizu

IPC分类号： H03B5/12

CPC分类号： H03B5/364 ,  H03H9/14597

摘要： In a circuit including a CMOS inverter (inverting amplifier) (IV02), a floating capacitance resulting from the circuit and peripheral interconnections thereof is Cs, a capacitive element (Cg) is connected to the input side of the CMOS inverter (inverting amplifier) (IV02), a capacitive element (Cd) is connected to the output side thereof, and the capacitances of the capacitive element (Cg) and the capacitive element (Cd) are determined (tuned) so that a load capacitance (CL) of a piezoelectric vibrator (X2) satisfies a relational expression “CL=Cs+Cg×Cd/(Cg+Cd)”. By determining the capacitances of the capacitive element (Cg) and the capacitive element (Cd) in this way, it is possible to improve the oscillation frequency stability with respect to a variation in capacitance value of the load capacitance (CL) in a region of a low load capacitance (CL) (for example, 3 pF).

摘要翻译： 在包括CMOS反相器（反相放大器）（IV02）的电路中，由电路及其外围互连产生的浮动电容为Cs，电容元件（Cg）连接到CMOS反相器（反相放大器）的输入侧 IV02），电容元件（Cd）连接到其输出侧，并且电容元件（Cg）和电容元件（Cd）的电容被确定（调谐），使得压电元件的负载电容（CL） 振动器（X2）满足关系式“CL = Cs + Cg×Cd /（Cg + Cd）”。 通过以这种方式确定电容元件（Cg）和电容元件（Cd）的电容，可以提高相对于负载电容（CL）的电容值的变化的振荡频率稳定性 低负载电容（CL）（例如3 pF）。

公开(公告)号：US20110075573A1

公开(公告)日：2011-03-31

申请号：US12841968

申请日：2010-07-22

申请人： Yasunori Saigusa ,  Satoshi Shimizu ,  Takayuki Nakagawa ,  Shinya Motoyama

发明人： Yasunori Saigusa ,  Satoshi Shimizu ,  Takayuki Nakagawa ,  Shinya Motoyama

IPC分类号： H04L12/26

CPC分类号： H04L12/437 ,  H04L12/4641

摘要： A control node includes: a monitoring packet transmission section for transmitting a monitoring packet; a monitoring packet reception section for receiving a monitoring packet; an adjustment section for selecting a redundant node from a non-control nodes; a packet generation section for generating a setup packet for specifying the redundant node out of the non-control nodes in accordance with information about the redundant node selected by the adjustment section; and a packet transmission section for transmitting the setup packet to the non-control node. The non-control node includes a control section that acquires information about the traffic upon receiving the monitoring packet, transmits a monitoring packet after acquisition of the traffic, and specifies the non-control node as the redundant node based on information about the redundant node contained in the setup packet upon receiving the setup packet.

摘要翻译： 控制节点包括：监视分组发送部分，用于发送监视分组; 监视分组接收部分，用于接收监视分组; 用于从非控制节点选择冗余节点的调整部分; 分组生成部，其根据关于由所述调整部所选择的所述冗余节点的信息，生成用于从所述非控制节点指定所述冗余节点的建立分组; 以及分组发送部分，用于将建立分组发送到非控制节点。 非控制节点包括控制部分，其在接收到监视分组时获取关于业务的信息，在获取业务之后发送监控分组，并且基于关于包含的冗余节点的信息将非控制节点指定为冗余节点 在收到建立包后的安装包中。

公开(公告)号：US20100310051A1

公开(公告)日：2010-12-09

申请号：US12745437

申请日：2009-02-04

申请人： Osamu Tsujii ,  Makoto Sato ,  Masahiko Okunuki ,  Satoshi Shimizu ,  Takashi Ogura

发明人： Osamu Tsujii ,  Makoto Sato ,  Masahiko Okunuki ,  Satoshi Shimizu ,  Takashi Ogura

IPC分类号： H01J35/14

CPC分类号： H01J35/06 ,  A61B6/4021 ,  A61B6/405 ,  A61B6/4405 ,  A61B6/4441 ,  A61B6/469 ,  A61B6/542 ,  H01J35/065 ,  H01J2235/062 ,  H01J2235/068

摘要： In an X-ray generator which includes an electron beam generating unit which has a plurality of electron emitters and generates an electron beam corresponding to driven electron emitters, and a target electrode which generates X-rays with the irradiation position of an electron beam generated by the electron beam generating unit being an X-ray focus, the X-ray focus shape formed by a set of X-ray focuses on the target electrode is controlled by individually controlling driving of the plurality of electron emitters.

摘要翻译： 在包括电子束产生单元的X射线发生器中，该电子束产生单元具有多个电子发射器并产生对应于被驱动的电子发射体的电子束，以及由电子束的照射位置产生X射线的目标电极， 电子束产生单元是X射线焦点，通过单独控制多个电子发射器的驱动来控制通过一组X射线聚焦在目标电极上形成的X射线焦点形状。

公开(公告)号：US07535083B2

公开(公告)日：2009-05-19

申请号：US11362313

申请日：2006-02-24

申请人： Masayuki Sato ,  Atsushi Kamiyama ,  Junji Teraya ,  Kazunori Ishii ,  Satoshi Shimizu

发明人： Masayuki Sato ,  Atsushi Kamiyama ,  Junji Teraya ,  Kazunori Ishii ,  Satoshi Shimizu

IPC分类号： H01L23/495

CPC分类号： H03H9/0519 ,  H01L2924/0002 ,  H03H3/02 ,  H01L2924/00

摘要： A lead frame has a pair of side frames each having a plurality of positioning holes and spaced apart from each other in a width direction of the lead frame. At least one section bar extends between the pair of side frames. First lead sections extend from the section bar and are arranged at predetermined intervals along the width direction of the lead frame. Second lead sections extend from the section bar along the width direction of the lead frame and are disposed in confronting and spaced-apart relation to the respective first lead sections in a longitudinal direction of the lead frame to define a frame area extending between the pair of side frames. Each of the second lead sections has a pair of separate and independent protruding portions disposed adjacent one another.

摘要翻译： 引线框架具有一对侧框架，每个侧框架具有多个定位孔，并且在引线框架的宽度方向上彼此间隔开。 至少一个截面杆在一对侧框之间延伸。 第一引线部分从截面杆延伸并且沿着引线框架的宽度方向以预定间隔布置。 第二引线部分沿着引线框架的宽度方向从截面棒延伸，并且在引线框架的纵向方向上相对于相应的第一引线部分以相对且间隔的关系设置，以限定在引线框架的纵向方向之间延伸的框架区域 侧框架 每个第二引线部分具有彼此相邻布置的一对独立且独立的突出部分。

公开(公告)号：US07425498B2

公开(公告)日：2008-09-16

申请号：US11602293

申请日：2006-11-21

申请人： Satoshi Shimizu

发明人： Satoshi Shimizu

IPC分类号： H01L21/3213 ,  H01L21/4763

CPC分类号： H01L27/11521 ,  H01L21/76897 ,  H01L27/115 ,  H01L29/7881 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a gate electrode having a straight portion, a dummy electrode located at a point on the extension of the straight portion, a stopper insulating film, a sidewall insulating film, an interlayer insulating film, and a linear contact portion extending, when viewed from above, parallel to the straight portion. The longer side of the rectangle defined by the linear contact portion is, when viewed from above, located beyond the sidewall insulating film and within the top region of the gate electrode and the dummy electrode. A gap G between the gate electrode and the dummy electrode appearing, when viewed from above, in the linear contact portion is filled with the sidewall insulating film such that the semiconductor substrate is not exposed.

摘要翻译： 一种半导体器件包括：具有直线部分的栅极电极，位于直线部分延伸点上的虚拟电极，阻挡绝缘膜，侧壁绝缘膜，层间绝缘膜和延伸的线性接触部分 从上方观察，平行于直线部分。 当从上方观察时，由线性接触部分限定的矩形的长边位于侧壁绝缘膜之外并且位于栅电极和虚拟电极的顶部区域内。 当从上方观察时，在直线接触部分中出现的栅电极和虚拟电极之间的间隙G被填充有侧壁绝缘膜，使得半导体衬底不暴露。

公开(公告)号：US20080035985A1

公开(公告)日：2008-02-14

申请号：US11882164

申请日：2007-07-31

申请人： Satoshi Shimizu ,  Yoshihiro Ikeda

发明人： Satoshi Shimizu ,  Yoshihiro Ikeda

IPC分类号： H01L29/788 ,  H01L21/31

CPC分类号： H01L27/115 ,  H01L21/7682 ,  H01L27/11521 ,  H01L27/11524

摘要： The semiconductor device which is hard to generate malfunction and whose reliability of an element is high, and its manufacturing method are offered.Each of a plurality of convex patterns is formed on the front surface of a semiconductor substrate so that it may have a floating gate and a control gate. The insulating layer has covered the side surface and the upper surface of a plurality of convex patterns, and the bottom between convex patterns. A contact interlayer insulating layer covers the cavity part located via an insulating layer between a plurality of convex patterns and on a plurality of convex patterns, and has a through hole. An insulating layer closes a through hole and occludes the cavity part.

摘要翻译： 难以产生故障，元件的可靠性高的半导体装置及其制造方法。 多个凸形图案中的每一个形成在半导体衬底的前表面上，使得其可以具有浮动栅极和控制栅极。 绝缘层已经覆盖了多个凸形图案的侧表面和上表面，以及凸起图案之间的底部。 接触层间绝缘层覆盖经由多个凸形图案之间的绝缘层和多个凸形图案上的绝缘层，并具有通孔。 绝缘层封闭通孔并封闭空腔部分。

公开(公告)号：US20070269949A1

公开(公告)日：2007-11-22

申请号：US11822467

申请日：2007-07-06

申请人： Jun Sumino ,  Satoshi Shimizu ,  Tsuyoshi Sugihara

发明人： Jun Sumino ,  Satoshi Shimizu ,  Tsuyoshi Sugihara

IPC分类号： H01L21/336

CPC分类号： H01L27/10873 ,  H01L21/76229 ,  H01L21/76232 ,  H01L21/76235 ,  H01L27/10855 ,  H01L27/10888 ,  H01L27/10894

摘要： The present fabrication method includes the steps of: providing a nitride film in a main surface of a semiconductor substrate; providing an upper trench, with the nitride film used as a mask; filling the upper trench with an oxide film introduced therein; removing the oxide film to expose at least a portion of a bottom of the upper trench and allowing a remainder of the oxide film to serve as a sidewall; providing a lower trench in a bottom of the upper trench, with the sidewall used as a mask; and with the upper trench having the sidewall remaining therein, providing an oxide film in the upper trench and the lower trench. This can provide a semiconductor device fabrication method and a semiconductor device preventing a contact from penetrating the device in an interconnection process.

摘要翻译： 本发明的制造方法包括以下步骤：在半导体衬底的主表面上设置氮化物膜; 提供上部沟槽，其中所述氮化物膜用作掩模; 用引入其中的氧化膜填充上沟槽; 去除所述氧化物膜以暴露所述上部沟槽的底部的至少一部分并且允许所述氧化膜的其余部分用作侧壁; 在所述上沟槽的底部提供下沟槽，所述侧壁用作掩模; 并且具有保留其侧壁的上沟槽，在上沟槽和下沟槽中提供氧化膜。 这可以提供半导体器件制造方法和半导体器件，以防止接触在互连过程中穿透器件。

公开(公告)号：US07289146B2

公开(公告)日：2007-10-30

申请号：US10766461

申请日：2004-01-27

申请人： Akio Saigusa ,  Satoshi Shimizu

发明人： Akio Saigusa ,  Satoshi Shimizu

IPC分类号： H04N9/64

CPC分类号： H04N5/359 ,  H04N1/1008 ,  H04N1/193 ,  H04N2201/0079 ,  H04N2201/0412

摘要： In an image reading apparatus using a solid state image pickup element, a smear amount and the total received light amount at whole image taking region of the CCD linear sensor when a light source is turned on without film, are measured and calculated.Using a ratio of the total received light amount when a light source is turned on without film to the one at the time of image reading, a smear correction data of each line is calculated for correction processing.

摘要翻译： 在使用固体摄像元件的图像读取装置中，测定并计算光源未被膜接通时CCD线性传感器的整个摄像区域的总体接收光量。 当光源在没有胶片的情况下打开时，使用总的接收光量的比例与图像读取时的总接收光量的比率，计算每行的涂片校正数据，以进行校正处理。