公开(公告)号：US07473945B2

公开(公告)日：2009-01-06

申请号：US11086989

申请日：2005-03-23

申请人： Tsuyoshi Takahashi ,  Katsuya Okabe ,  Akira Hatsugai

发明人： Tsuyoshi Takahashi ,  Katsuya Okabe ,  Akira Hatsugai

IPC分类号： H01L27/148

CPC分类号： H01L27/14643 ,  H01L27/14623 ,  H01L27/1463

摘要： Disclosed is an optical semiconductor integrated circuit device has an opening portion in an insulating layer, which is formed in a light receiving region of a photodiode stepwise. Thus, a step of the opening portion is reduced, leading to an improvement of a step coverage of a light shadowing film formed on the insulating film so as to cover the insulating film. By the improvement of the step coverage of the opening portion, the light shadowing film located on a plane of the light shadowing film of the photodiode is not broken. A problem that a conventional light shadowing film is broken is solved in the photodiode for a blue laser beam.

摘要翻译： 公开了一种光学半导体集成电路器件，其在绝缘层中具有开口部分，其形成在光电二极管的光接收区域中。 因此，开口部分的台阶减小，导致形成在绝缘膜上的遮光膜的台阶覆盖率得以改善以覆盖绝缘膜。 通过提高开口部的台阶覆盖率，位于光电二极管的遮光膜的平面上的遮光膜不会破裂。 在蓝色激光束的光电二极管中解决了传统的遮光膜被破坏的问题。

公开(公告)号：US20080139000A1

公开(公告)日：2008-06-12

申请号：US11972503

申请日：2008-01-10

申请人： Masanobu IGETA ,  Shintaro Aoyama ,  Hiroshi Shinriki ,  Tsuyoshi Takahashi

发明人： Masanobu IGETA ,  Shintaro Aoyama ,  Hiroshi Shinriki ,  Tsuyoshi Takahashi

IPC分类号： H01L21/31

CPC分类号： H01L21/28185 ,  C23C16/34 ,  C23C16/405 ,  C23C16/482 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/316 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662 ,  H01L21/67017 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method of nitriding an insulation film, includes the steps of forming nitrogen radicals by high-frequency plasma, and causing nitridation in a surface of an insulation film containing therein oxygen, by supplying the nitrogen radicals to the surface of the insulation film.

摘要翻译： 对绝缘膜进行氮化的方法包括以下步骤：通过在绝缘膜的表面供给氮自由基，通过高频等离子体形成氮自由基，并在其中含有氧的绝缘膜的表面发生氮化。

公开(公告)号：US07301721B2

公开(公告)日：2007-11-27

申请号：US11282673

申请日：2005-11-21

申请人： Tatsuya Ito ,  Tadashi Okumura ,  Tsuyoshi Takahashi ,  Masatoshi Ishikawa ,  Yuji Nishimura ,  Tetsuo Yuki

发明人： Tatsuya Ito ,  Tadashi Okumura ,  Tsuyoshi Takahashi ,  Masatoshi Ishikawa ,  Yuji Nishimura ,  Tetsuo Yuki

IPC分类号： G11B21/02 ,  G11B17/00 ,  G01L9/00 ,  G11B5/58

CPC分类号： G01P15/0891 ,  G11B5/54 ,  G11B19/04 ,  G11B21/12

摘要： A falling sensor is provided, which detects a falling of a magnetic disk drive or an information processing device installed with said magnetic disk drive and which is effective for avoiding physical damages of magnetic heads and magnetic disk media. The magnetic disk drive or the information processing device, include an unload mechanism moving or evacuating said magnetic head from a surface of said magnetic disk media, and a falling sensor comprising a conductive flexible beams 9 or members having a compatible function, a conductive weight 10 supported by these beams and a conductive wall 11 arranged to be made contact or non-contact with said weight 10. The sensor can detect a falling of the magnetic disk drive or the information processing device which is typically a notebook personal computer installing with the magnetic disk drive, and evacuate the magnetic head by the unload mechanism. The conductive wall 11 can be formed as a tubular member.

摘要翻译： 提供了一种下降传感器，其检测安装有所述磁盘驱动器的磁盘驱动器或信息处理装置的下落，并且其有效地避免磁头和磁盘介质的物理损坏。 磁盘驱动器或信息处理装置包括从所述磁盘介质的表面移动或抽出所述磁头的卸载机构，以及包括导电柔性梁9或具有兼容功能的构件的下落传感器，导电重量10 由这些梁支撑，导电壁11布置成与所述配重10接触或不接触。 传感器可以检测磁盘驱动器或信息处理装置的掉落，该装置通常是与磁盘驱动器一起安装的笔记本个人计算机，并且通过卸载机构排出磁头。 导电壁11可以形成为管状构件。

公开(公告)号：US20070268608A1

公开(公告)日：2007-11-22

申请号：US11522675

申请日：2006-09-18

申请人： Tsuyoshi Takahashi

发明人： Tsuyoshi Takahashi

IPC分类号： G11B21/02

CPC分类号： G11B5/6005 ,  G11B5/607

摘要： A head floating amount control unit control a head floating amount of each of a plurality of heads respectively having a heater, with respect to a recording medium, by detecting contact between each head and a corresponding recording medium by detecting a thermal asperity or a read error, and judging a heating amount of the heater at a time when the contact is detected as a state where the head floating amount is zero, and controlling the head floating amount of each head to an optimum head floating amount based on a relationship of the heating amount of the heater and an amount of thermal expansion of each head.

摘要翻译： 磁头浮动量控制单元通过检测每个磁头和对应的记录介质之间的接触来检测分别具有加热器的多个磁头中的每一个的磁头浮动量，通过检测热凹凸或读出错误 ，并且当检测到接触被检测为头浮动量为零的状态时判断加热器的加热量，并且基于加热的关系将每个头部的头部浮动量控制到最佳头部浮动量 加热器的量和每个头部的热膨胀量。

公开(公告)号：US07235418B2

公开(公告)日：2007-06-26

申请号：US10949707

申请日：2004-09-27

申请人： Tsuyoshi Takahashi ,  Katsuya Okabe ,  Akira Hatsugai

发明人： Tsuyoshi Takahashi ,  Katsuya Okabe ,  Akira Hatsugai

IPC分类号： H01L21/00

CPC分类号： H01L31/10 ,  H01L27/1443 ,  H01L27/1463 ,  H01L27/14681 ,  H01L31/18

摘要： In an existing optical semiconductor integrated circuit device, a multi-layered wiring layer is formed on a top surface of a substrate. Therefore, a film thickness of an insulating layer on a top surface of a photodiode could be uniformed with difficulty. Thus there was a problem in the constitution of the insulating layer wherein light incidence was caused to fluctuate, and thereby a desired sensitivity to light could not be obtained. In an optical semiconductor integrated circuit device according to the present invention, after a multi-layered wiring layer is formed on a top surface of a substrate, an insulating layer on a top surface of an anti-reflection film of a photodiode is dry-etched to remove. At this time, a barrier metal layer is used as an etching stopper film. Thereby, in the invention, a manufacturing process can be simplified and owing to adoption of the dry etching miniaturization can be realized. Furthermore, since the anti-reflection film is exposed from the insulating layer, fluctuation of incident light can be suppressed and the sensitivity to light can be improved.

摘要翻译： 在现有的光半导体集成电路器件中，在衬底的顶表面上形成多层布线层。 因此，难以将光电二极管的上表面的绝缘层的膜厚均匀化。 因此，存在导致光入射波动的绝缘层的结构的问题，从而不能获得对光的期望的敏感度。 在根据本发明的光半导体集成电路器件中，在衬底的顶表面上形成多层布线层之后，将光电二极管的防反射膜的顶表面上的绝缘层干蚀刻 去除。 此时，使用阻挡金属层作为蚀刻停止膜。 因此，在本发明中，可以简化制造工艺，并且可以实现采用干蚀刻小型化。 此外，由于防反射膜从绝缘层露出，因此可以抑制入射光的波动，并且可以提高对光的灵敏度。

公开(公告)号：US20060235199A1

公开(公告)日：2006-10-19

申请号：US10568392

申请日：2004-06-21

申请人： Hisakazu Mihara ,  Tsuyoshi Takahashi ,  Hideo Ooshima

发明人： Hisakazu Mihara ,  Tsuyoshi Takahashi ,  Hideo Ooshima

IPC分类号： G01N33/53 ,  C07K7/08

CPC分类号： C07K14/4711

摘要： There are disclosed a natural peptide search in which a template reaction with the nucleus of a minute amount of amyloid β-protein having undergone amyloid fibrosis is induced so as to form amyloid fibers, followed by fiber amount increase and amplification; designing and development of a novel artificial peptide which can be a substitute therefor; a method of amplifying the amyloid fibrosis of amyloid β-protein with the use thereof and a reagent for use therein; and a method of detecting disease caused by amyloidosis and a reagent for use therein. In particular, there are provided a method of amplifying the amyloid fibrosis of amyloid β-protein with the use of a reagent comprising a peptide composed of 14 to 23 residues of amyloid β-peptide or a peptide resulting from substitution of all the positive-charge side chain amino acids of the peptide with Lys and substitution of all the negative-charge side chain amino acids thereof with Glu; a reagent for use therein; a method of detecting disease caused by amyloidosis with the use of a reagent comprising the above peptide; a reagent for use therein; and a novel artificial peptide which can be used therein.

摘要翻译： 公开了一种天然肽搜索，其中诱导与微量淀粉样蛋白β蛋白的细胞核的模板反应，以形成淀粉样蛋白纤维，然后进行纤维量的增加和扩增; 一种新型人造肽的设计与开发，可作为替代品; 一种使用淀粉样蛋白β蛋白的淀粉样蛋白纤维化进行扩增的方法和用于其中的试剂; 以及检测由淀粉样变性引起的疾病的方法和用于其中的试剂。 特别地，提供了使用包含由14至23个淀粉样蛋白β肽残基组成的肽的试剂或由所有正电荷取代产生的肽的淀粉样蛋白β蛋白的淀粉样蛋白纤维化的方法 肽的侧链氨基酸与Lys，并用Glu取代所有负电荷侧链氨基酸; 用于其中的试剂; 使用包含上述肽的试剂检测由淀粉样变性引起的疾病的方法; 用于其中的试剂; 和可用于其中的新型人造肽。

公开(公告)号：US20060049427A1

公开(公告)日：2006-03-09

申请号：US11041979

申请日：2005-01-26

申请人： Tsuyoshi Takahashi

发明人： Tsuyoshi Takahashi

IPC分类号： H01L29/739

CPC分类号： H01L29/66462 ,  H01L27/0605 ,  H01L29/7784

摘要： A field effect type semiconductor device is disclosed wherein a channel is easily depleted just under a gate electrode to implement an E-mode, but a channel is hard to be depleted just under a gate recess region so that the transconductance gm and the cutoff frequency fT can be set to sufficiently high values. The present device includes a first etching stop layer Schottky contacting with an end face of the gate electrode and a second etching stop layer extending to a position in the proximity of a side face of the gate electrode. The first etching stop layer is formed from a material which is easily depleted (one of materials of a group including InAlP, InP, InAsP, InSbP, InAlAsP, and InAlSbP), and the second etching stop layer is formed from a material which is hard to be depleted (one of materials of a group including InGaP, InGaAsP, InGaSbP).

摘要翻译： 公开了一种场效应型半导体器件，其中通道在栅电极正下方容易耗尽以实现E模式，但是沟道在栅极凹陷区域正下方难以耗尽，因此跨导gm和截止频率f 可以将T设定为足够高的值。 本装置包括与栅电极的端面肖特基接触的第一蚀刻停止层和延伸到栅电极的侧面附近的位置的第二蚀刻停止层。 第一蚀刻停止层由易于耗尽的材料（包括InAlP，InP，InAsP，InSbP，InAlAsP和InAlSbP的组中的一种）形成，并且第二蚀刻停止层由硬的材料形成 （包括InGaP，InGaAsP，InGaSbP的材料之一）。

公开(公告)号：US20050118815A1

公开(公告)日：2005-06-02

申请号：US10948740

申请日：2004-09-24

申请人： Tsuyoshi Takahashi ,  Katsuya Okabe ,  Akira Hatsugai

发明人： Tsuyoshi Takahashi ,  Katsuya Okabe ,  Akira Hatsugai

IPC分类号： H01L27/14 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/461 ,  H01L21/82 ,  H01L27/06 ,  H01L31/10 ,  H01L31/18

CPC分类号： H01L31/18 ,  H01L27/14683

摘要： In an existing optical semiconductor integrated circuit device, a silicon nitride film that is an anti-reflection film is used as an etching stopper film at the etching of an insulating film and by means of wet etching the insulating film is removed once for all. Accordingly, there is a problem in that the processing accuracy is poor. In an optical semiconductor integrated circuit device according to the present invention, after a multi-layered wiring layer is formed on a top surface of a silicon substrate, an insulating layer on a top surface of an anti-reflection film of a photodiode is removed by means of dry etching. At this time, a polycrystal silicon film is used as an etching stopper film. Thereby, in the photodiode according to the invention, although the dry etching is used, since a silicon nitride film that is an anti-reflection film is not over-etched, the dispersion of film thickness thereof can be inhibited from occurring. As a result, a photodiode according to the present invention can realize an improvement in the sensitivity of incident light and a miniaturization structure can be realized.

摘要翻译： 在现有的光学半导体集成电路器件中，作为防反射膜的氮化硅膜在蚀刻绝缘膜时用作蚀刻阻挡膜，并且通过湿蚀刻，绝缘膜全部被去除一次。 因此，存在加工精度差的问题。 在根据本发明的光半导体集成电路器件中，在硅衬底的顶表面上形成多层布线层之后，通过光电二极管的抗反射膜的顶表面上的绝缘层被除去 干蚀刻手段。 此时，使用多晶硅膜作为蚀刻停止膜。 因此，在根据本发明的光电二极管中，尽管使用干法蚀刻，但是由于作为防反射膜的氮化硅膜未被过度蚀刻，所以可以抑制其膜厚分散。 结果，根据本发明的光电二极管可以实现入射光的灵敏度的提高，并且可以实现小型化结构。

公开(公告)号：US06692982B2

公开(公告)日：2004-02-17

申请号：US10355220

申请日：2003-01-31

申请人： Tsuyoshi Takahashi ,  Toshiyuki Okoda

发明人： Tsuyoshi Takahashi ,  Toshiyuki Okoda

IPC分类号： H01L2100

CPC分类号： H01L29/66272 ,  H01L27/0664 ,  H01L27/1443 ,  H01L31/105

摘要： In an optical semiconductor integrated circuit device in which a vertical pnp transistor and a photodiode are formed, the preferred embodiments of the present invention eliminates difficulty in performance improvement of the two elements. In an illustrative optical semiconductor integrated circuit device, a vertical pnp transistor and a photodiode have been formed, and first and second epitaxial layers and are stacked without doping. This enables a depletion layer forming region to be remarkably increased in the photodiode, and high-speed response becomes possible. Additionally, in the vertical pnp transistor, an n+ type diffusion region surrounds the transistor forming region. This can remarkably improve voltage endurance of the vertical pnp transistor 21.

摘要翻译： 在其中形成有垂直pnp晶体管和光电二极管的光学半导体集成电路器件中，本发明的优选实施例消除了两个元件的性能改进的困难。 在说明性的光学半导体集成电路器件中，已经形成了垂直pnp晶体管和光电二极管，以及第一和第二外延层，并且不掺杂地堆叠。 这使得光电二极管中的耗尽层形成区域显着增加，并且可以实现高速响应。 此外，在垂直pnp晶体管中，n +型扩散区围绕晶体管形成区域。 这可以显着提高垂直pnp晶体管21的耐压。

公开(公告)号：US06687783B1

公开(公告)日：2004-02-03

申请号：US09349320

申请日：1999-07-08

申请人： Tsuyoshi Takahashi

发明人： Tsuyoshi Takahashi

IPC分类号： G06F1202

CPC分类号： G06F3/0632 ,  G06F3/0607 ,  G06F3/0619 ,  G06F3/0679 ,  G11B19/122 ,  G11B20/00086 ,  G11B27/034

摘要： When a storage medium is set in a control unit, a controller reads out device ID data, CIS data and Identify-Drive data from the storage medium. Based on the device ID data and the CIS data, the controller authenticates the storage medium and stores the Identify-Drive data. A CPU in the controller reads out replacement Identify-Drive data from a storage section in response to a command from a computer. Using the replacement Identify-Drive data, the CPU updates the Identify-Drive data stored in the controller. Hereafter the controller accesses the storage medium in accordance with conditions represented by the updated Identify-Drive data.

摘要翻译： 当存储介质设置在控制单元中时，控制器从存储介质读出设备ID数据，CIS数据和识别驱动数据。 基于设备ID数据和CIS数据，控制器对存储介质进行认证并存储识别驱动数据。 响应于来自计算机的命令，控制器中的CPU从存储部分读出替换识别驱动器数据。 使用替换的识别驱动器数据，CPU更新存储在控制器中的识别驱动器数据。 此后，控制器根据由更新的识别驱动数据表示的条件访问存储介质。