公开(公告)号：US20220190166A1

公开(公告)日：2022-06-16

申请号：US17687817

申请日：2022-03-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro SAKATA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L29/24

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

公开(公告)号：US20210384356A1

公开(公告)日：2021-12-09

申请号：US17349974

申请日：2021-06-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04

Abstract: To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.

公开(公告)号：US20180226510A1

公开(公告)日：2018-08-09

申请号：US15942957

申请日：2018-04-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.

公开(公告)号：US20170309904A1

公开(公告)日：2017-10-26

申请号：US15594711

申请日：2017-05-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takuya HIROHASHI ,  Teppei OGUNI

IPC: H01M4/38 ,  B82Y30/00 ,  H01M4/587 ,  H01G11/32 ,  H01M4/583 ,  H01M10/0525 ,  B82Y40/00

CPC classification number: H01M4/386 ,  B82Y30/00 ,  B82Y40/00 ,  H01G11/32 ,  H01M4/583 ,  H01M4/587 ,  H01M10/0525 ,  H01M2220/20 ,  H01M2220/30 ,  Y02E60/122 ,  Y02E60/13 ,  Y02P70/54 ,  Y02T10/7011 ,  Y02T10/7022

Abstract: An object is to provide graphene which has high conductivity and is permeable to ions of lithium or the like. Another object is to provide, with use of the graphene, a power storage device with excellent charging and discharging characteristics. Graphene having a hole inside a ring-like structure formed by carbon and nitrogen has conductivity and is permeable to ions of lithium or the like. The nitrogen concentration in graphene is preferably higher than or equal to 0.4 at. % and lower than or equal to 40 at. %. With use of such graphene, ions of lithium or the like can be preferably made to pass; thus, a power storage device with excellent charging and discharging characteristics can be provided.

公开(公告)号：US20160218226A1

公开(公告)日：2016-07-28

申请号：US15090937

申请日：2016-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/78696 ,  H01L21/2636 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

公开(公告)号：US20160111282A1

公开(公告)日：2016-04-21

申请号：US14972964

申请日：2015-12-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Junichiro SAKATA ,  Takuya HIROHASHI ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Akiharu MIYANAGA

IPC: H01L21/02 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/28079 ,  H01L21/28158 ,  H01L29/04 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

Abstract: It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).

公开(公告)号：US20150270405A1

公开(公告)日：2015-09-24

申请号：US14734080

申请日：2015-06-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Masashi TSUBUKU ,  Noritaka ISHIHARA ,  Masashi OOTA

IPC: H01L29/786 ,  H01L29/04

CPC classification number: H01L27/1225 ,  C23C14/086 ,  G01N23/207 ,  G02F1/1368 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L22/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

公开(公告)号：US20230369341A1

公开(公告)日：2023-11-16

申请号：US18137032

申请日：2023-04-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Masashi TSUBUKU ,  Noritaka ISHIHARA ,  Masashi OOTA

IPC: H01L27/12 ,  G02F1/1368 ,  C23C14/08 ,  H01L29/66 ,  H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  G01N23/207 ,  H01L21/66 ,  H01L21/02

CPC classification number: H01L27/1225 ,  G02F1/1368 ,  C23C14/086 ,  H01L29/66969 ,  H01L29/78693 ,  H01L29/7869 ,  H01L29/24 ,  H01L29/04 ,  G01N23/207 ,  H01L22/12 ,  H01L2924/0002 ,  H01L21/0237 ,  H01L21/02631 ,  H01L21/02422 ,  H01L21/02565 ,  H01L21/02554

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

公开(公告)号：US20230361290A1

公开(公告)日：2023-11-09

申请号：US18212440

申请日：2023-06-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro KAWAKAMI ,  Teruaki OCHIAI ,  Shuhei YOSHITOMI ,  Takuya HIROHASHI ,  Mako MOTOYOSHI ,  Yohei MOMMA ,  Junya GOTO

IPC: H01M4/505 ,  H01M4/36 ,  H01M4/131 ,  H01M4/1391

CPC classification number: H01M4/505 ,  H01M4/366 ,  H01M4/131 ,  H01M4/1391 ,  H01M2220/30

Abstract: To increase capacity per weight of a power storage device, a particle includes a first region, a second region in contact with at least part of a surface of the first region and located on the outside of the first region, and a third region in contact with at least part of a surface of the second region and located on the outside of the second region. The first and the second regions contain lithium and oxygen. At least one of the first region and the second region contains manganese. At least one of the first and the second regions contains an element M. The first region contains a first crystal having a layered rock-salt structure. The second region contains a second crystal having a layered rock-salt structure. An orientation of the first crystal is different from an orientation of the second crystal.

公开(公告)号：US20180175386A1

公开(公告)日：2018-06-21

申请号：US15874123

申请日：2018-01-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro KAWAKAMI ,  Tatsuya IKENUMA ,  Teruaki OCHIAI ,  Shuhei YOSHITOMI ,  Mako MOTOYOSHI ,  Hiroyuki MIYAKE ,  Yohei MOMMA ,  Takuya HIROHASHI ,  Satoshi SEO

IPC: H01M4/485 ,  H01M4/48 ,  G06F1/16 ,  H01M4/62 ,  H01M4/583 ,  H01M4/505 ,  G04G21/00 ,  H01M4/525 ,  H01M4/36 ,  H01M10/052

CPC classification number: H01M4/485 ,  G04C10/00 ,  G04G21/00 ,  G06F1/16 ,  G06F1/1626 ,  G06F1/163 ,  G06F1/1635 ,  G06F1/1652 ,  H01M4/366 ,  H01M4/483 ,  H01M4/505 ,  H01M4/525 ,  H01M4/583 ,  H01M4/623 ,  H01M4/625 ,  H01M10/052 ,  H01M2220/30

Abstract: A lithium-ion secondary battery with high capacity is provided. Alternatively, a lithium-ion secondary battery with unproved cycle characteristics is provided. To achieve this, an active material including a particle having a cleavage plane and a layer containing carbon covering at least part of the cleavage plane is provided. The particle having the cleavage plane contains lithium, manganese, nickel, and oxygen. The layer containing carbon preferably contains graphene. When a lithium-ion secondary battery is fabricated using an electrode including the particle having the cleavage plane at least part of which is covered with the layer containing carbon as an active material, the discharge capacity can be increased and the cycle characteristics can be improved.