公开(公告)号：US09018669B2

公开(公告)日：2015-04-28

申请号：US14231043

申请日：2014-03-31

Applicant: Seoul Viosys Co., Ltd.

Inventor： Won Cheol Seo ,  Dae Sung Cho ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

IPC: H01L33/00 ,  H01L33/42 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L33/08 ,  H01L33/20

CPC classification number: H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

Abstract: A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

Abstract translation: 衬底，布置在衬底上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层和第二导电类型半导体层之间的有源层，第一导电类型半导体层 电连接到第一导电型半导体层的电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极焊盘之间的绝缘层，以及至少一个电连接 到所述第二电极焊盘，所述至少一个上延伸部电连接到所述第二导电型半导体层。

公开(公告)号：US20150076446A1

公开(公告)日：2015-03-19

申请号：US14385113

申请日：2013-02-27

Applicant: Seoul Viosys Co, Ltd.

Inventor： Duk II Suh ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ji Hye Kim

IPC: H01L33/24 ,  H01L33/42 ,  H01L33/32 ,  H01L33/10 ,  H01L33/06 ,  H01L33/00

CPC classification number: H01L33/24 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/382 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: Disclosed are a light emitting diode and a method of fabricating the same. The light emitting diode includes a GaN substrate having a plurality of through-holes; a GaN-based semiconductor stack structure placed on the substrate and including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; and a first electrode electrically connected to the first conductive-type semiconductor layer via the through-holes. The light emitting diode can reduce crystal defects and prevent reduction in light emitting area.

Abstract translation: 公开了一种发光二极管及其制造方法。 发光二极管包括具有多个通孔的GaN衬底; GaN基半导体堆叠结构，其放置在基板上并且包括第一导电型半导体层，有源层和第二导电型半导体层; 以及经由所述通孔与所述第一导电型半导体层电连接的第一电极。 发光二极管可以减少晶体缺陷并防止发光面积的减少。

公开(公告)号：US20140231852A1

公开(公告)日：2014-08-21

申请号：US14181094

申请日：2014-02-14

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Duk Il Suh ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Won Woo ,  Shin Hyoung Kim

IPC: H01L27/15

CPC classification number: H01L33/387 ,  H01L27/15 ,  H01L29/861 ,  H01L33/145 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2933/0091 ,  H01L2924/00014

Abstract: A light emitting diode chip and a light emitting diode package including the same. The light emitting diode chip includes a substrate, a light emitting diode section disposed on the substrate, an inverse parallel diode section disposed on the substrate and connected inversely parallel to the light emitting diode section. In the light emitting diode chip, the light emitting diode section is disposed together with the inverse parallel diode section.

Abstract translation: 发光二极管芯片和包括该发光二极管芯片的发光二极管封装。 发光二极管芯片包括衬底，设置在衬底上的发光二极管部分，设置在衬底上并且与发光二极管部分反向并联连接的反并联二极管部分。 在发光二极管芯片中，发光二极管部分与逆并联二极管部分一起设置。

公开(公告)号：US20140131729A1

公开(公告)日：2014-05-15

申请号：US14053098

申请日：2013-10-14

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jeong Hun HEO ,  Yeo Jin Yoon ,  Joo Won Choi ,  Joon Hee Lee ,  Chang Yeon Kim ,  Su Young Lee

IPC: H01L27/15

CPC classification number: H01L33/0075 ,  H01L27/156 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Exemplary embodiments of the present invention disclose a semiconductor device and a method of fabricating the same. The semiconductor device includes a gallium nitride substrate, a plurality of semiconductor stacks disposed on the gallium nitride substrate, and an insulation pattern disposed between the gallium nitride substrate and the plurality of semiconductor stacks, the insulation pattern insulating the semiconductor stacks from the gallium nitride substrate.

Abstract translation: 本发明的示例性实施例公开了一种半导体器件及其制造方法。 半导体器件包括氮化镓衬底，设置在氮化镓衬底上的多个半导体堆叠以及设置在氮化镓衬底和多个半导体堆叠之间的绝缘图案，该绝缘图案使半导体堆叠与氮化镓衬底绝缘 。

公开(公告)号：US11572290B2

公开(公告)日：2023-02-07

申请号：US17385364

申请日：2021-07-26

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jae Young Choi ,  Kyu Won Han ,  Yeo Jin Yoon ,  Woong Ki Jeong

IPC: C02F1/32

Abstract: A sterilizing module includes a main body and a light source. The main body includes an inner surface, an outer surface and an internal space to treat a target substance in a fluid and connected an inlet and a outlet. The light source is configured to emit light toward the internal space to sterilize the target substance in the fluid. The light source includes a substrate and a plurality of light emitting structures disposed on the substrate. The plurality of light emitting structures is disposed to be spaced apart each other. A first distance between two light emitting structures is adjacent to each other varies depending on a second distance from each light emitting structure to the inner surface of the main body. The second distance has a maximum value and a minimum value of illuminance and a difference between the maximum and the minimum value thereof is about more than 75%.

公开(公告)号：US11282892B2

公开(公告)日：2022-03-22

申请号：US16594239

申请日：2019-10-07

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu Kim ,  So Ra Lee ,  Yeo Jin Yoon ,  Jae Kwon Kim ,  Joon Sup Lee ,  Min Woo Kang ,  Se Hee Oh ,  Hyun A. Kim ,  Hyoung Jin Lim

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/38 ,  H01L33/58 ,  H01L33/60 ,  H01L33/64 ,  H01L33/36 ,  H01L33/62

Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

公开(公告)号：US11242266B2

公开(公告)日：2022-02-08

申请号：US16805389

申请日：2020-02-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jae Young Choi ,  Kyu Won Han ,  Yeo Jin Yoon ,  Woong Ki Jeong

IPC: C02F1/32 ,  A61L9/20

Abstract: A fluid treatment device includes a pipe including an inlet, an outlet, an internal space through which a fluid moves and including a light source part disposed in the internal space and providing a light to the fluid. The light source part includes at least one light source unit having a substrate and a plurality of light sources disposed on the substrate and emitting the light. A ratio of a first distance between two light sources adjacent to each other to a second distance between each light source and an inner circumferential surface of the pipe is 1:1.25 or less when viewed in a longitudinal-section.

公开(公告)号：US11072544B2

公开(公告)日：2021-07-27

申请号：US16805389

申请日：2020-02-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jae Young Choi ,  Kyu Won Han ,  Yeo Jin Yoon ,  Woong Ki Jeong

IPC: C02F1/32 ,  A61L9/20

Abstract: A fluid treatment device includes a pipe including an inlet, an outlet, an internal space through which a fluid moves and including a light source part disposed in the internal space and providing a light to the fluid. The light source part includes at least one light source unit having a substrate and a plurality of light sources disposed on the substrate and emitting the light. A ratio of a first distance between two light sources adjacent to each other to a second distance between each light source and an inner circumferential surface of the pipe is 1:1.25 or less when viewed in a longitudinal-section.

公开(公告)号：US11069846B2

公开(公告)日：2021-07-20

申请号：US15572051

申请日：2016-04-25

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jun Yong Park ,  Jae Hyun Park ,  Yeo Jin Yoon ,  In Kyu Park

IPC: H01L33/64 ,  H01L25/075 ,  H01L33/48 ,  H01L33/62 ,  H01L33/60

Abstract: A light-emitting device is provided. The light-emitting device comprises: a first body unit including a base part and at least three conductive patterns positioned on the base part while including a plurality of element loading areas; and a plurality of light-emitting elements positioned on the plurality of element loading areas of the first body unit, wherein at least one conductive pattern among the conductive patterns is electrically connected to at least two light-emitting elements, the at least two light-emitting elements are connected to each other in series, at least two conductive patterns among the conductive patterns include pad electrode areas, an area of the plurality of conductive patterns is 80% or more of an upper surface area of the base part, and a separation distance among the plurality of conductive patterns is 200 μm to 2,400 μm.

公开(公告)号：US10608141B2

公开(公告)日：2020-03-31

申请号：US15936321

申请日：2018-03-26

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

IPC: H01L33/36 ,  H01L33/62 ,  H01L33/38 ,  H01L33/20 ,  H01L33/42 ,  H01L33/46 ,  H01L33/08

Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.