公开(公告)号：US08735923B2

公开(公告)日：2014-05-27

申请号：US13251897

申请日：2011-10-03

申请人： Tae Sung Jang ,  Seok Min Hwang ,  Su Yeol Lee ,  Jong Gun Woo

发明人： Tae Sung Jang ,  Seok Min Hwang ,  Su Yeol Lee ,  Jong Gun Woo

IPC分类号： H01L29/18 ,  H01L29/30 ,  H01L33/00 ,  H01L21/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0091

摘要： There is provided a semiconductor light emitting device and method of making the same, having a first conductivity type semiconductor layer; an active layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the active layer and including a plurality of holes; and a transparent electrode formed on the second conductivity type semiconductor layer.

摘要翻译： 提供了具有第一导电类型半导体层的半导体发光器件及其制造方法， 形成在所述第一导电类型半导体层上的有源层; 形成在有源层上并包括多个孔的第二导电类型半导体层; 以及形成在第二导电类型半导体层上的透明电极。

公开(公告)号：US08686450B2

公开(公告)日：2014-04-01

申请号：US11892445

申请日：2007-08-23

申请人： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

发明人： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/22 ,  H01L2933/0083

摘要： The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.

摘要翻译： 本发明涉及一种垂直构造的GaN基发光二极管的制造方法。 制造垂直结构的GaN基发光二极管的方法包括在衬底上形成GaN层; 将化合物层图案化成预定的形状; 通过外延横向过度生长工艺在图案化的化合物层上形成n型GaN层，并在n型GaN层上依次形成有源层和p型GaN层; 在p型GaN层上形成结构支撑层; 在形成结构支撑层之后，依次去除衬底和形成在衬底上的GaN层; 去除在去除GaN层之后暴露的图案化合物层，以形成图案化为凹形的n型GaN层; 在形成凹形的n型GaN层上形成n型电极。

公开(公告)号：US20120080707A1

公开(公告)日：2012-04-05

申请号：US13251897

申请日：2011-10-03

申请人： Tae Sung JANG ,  Seok Min Hwang ,  Su Yeol Lee ,  Jong Gun Woo

发明人： Tae Sung JANG ,  Seok Min Hwang ,  Su Yeol Lee ,  Jong Gun Woo

IPC分类号： H01L33/60 ,  H01L33/42

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0091

摘要： There is provided a semiconductor light emitting device and method of making the same, having a first conductivity type semiconductor layer; an active layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the active layer and including a plurality of holes; and a transparent electrode formed on the second conductivity type semiconductor layer.

摘要翻译： 提供了具有第一导电类型半导体层的半导体发光器件及其制造方法， 形成在所述第一导电类型半导体层上的有源层; 形成在有源层上并包括多个孔的第二导电类型半导体层; 以及形成在第二导电类型半导体层上的透明电极。

公开(公告)号：US08115220B2

公开(公告)日：2012-02-14

申请号：US11889562

申请日：2007-08-14

申请人： Su Yeol Lee ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

发明人： Su Yeol Lee ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/14 ,  H01L33/40

摘要： Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

公开(公告)号：US07791100B2

公开(公告)日：2010-09-07

申请号：US11602285

申请日：2006-11-21

申请人： Su Yeol Lee ,  Dong Woo Kim ,  Seok Beom Choi ,  Tae Jun Kim

发明人： Su Yeol Lee ,  Dong Woo Kim ,  Seok Beom Choi ,  Tae Jun Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/38

摘要： A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer formed under the p-electrode. The light-emitting structure has or or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.

摘要翻译： 垂直GaN基LED包括n型接合焊盘; 形成在n型焊盘下面的n电极; 通过在n电极下依次层叠n型GaN层，有源层和p型GaN层而形成的发光结构体; 形成在发光结构下的p电极; 以及形成在p电极下方的支撑层。 发光结构具有与n电极与发光结构的最外侧隔开预定距离的沟槽，并且其中除去发光结构的有源层。

公开(公告)号：US07695989B2

公开(公告)日：2010-04-13

申请号：US12406540

申请日：2009-03-18

申请人： Doo Go Baik ,  Bang Won Oh ,  Seok Beom Choi ,  Su Yeol Lee

发明人： Doo Go Baik ,  Bang Won Oh ,  Seok Beom Choi ,  Su Yeol Lee

IPC分类号： H01L21/00

CPC分类号： H01L33/14 ,  H01L33/02 ,  H01L33/32

摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.

摘要翻译： 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED可以防止与n型电极接触的n型GaN层的损坏，从而稳定地确保n电极的接触电阻。 垂直GaN基LED包括：支撑层; 形成在支撑层上的p电极; 形成在p电极上的p型GaN层; 形成在p型GaN层上的有源层; 在有源层上形成用于n型电极接触的n型GaN层; 形成在所述n型GaN层上以暴露所述n型GaN层的一部分的蚀刻停止层; 以及形成在由蚀刻停止层露出的n型GaN层上的n电极。

公开(公告)号：US07687818B2

公开(公告)日：2010-03-30

申请号：US12177517

申请日：2008-07-22

申请人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

发明人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC分类号： H01L33/00

CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/405

摘要： There is provided a semiconductor light emitting device having excellent light extraction efficiency to efficiently reflect light moving into the device by increasing the total reflectivity of a reflective layer. A semiconductor light emitting device according to an aspect of the invention includes: a substrate, a reflective electrode, a first conductivity semiconductor layer, an active layer, and a second conductivity type semiconductor layer that are sequentially stacked. Here, the reflective electrode includes; a first reflective layer provided on the substrate and including a conductive reflective material reflecting light generated from the active layer; and a second reflective layer provided on the first reflective layer, including one or more dielectric portions reflecting light generated from the active layer, and one or more contact holes filled with a conductive filler to electrically connect the first conductivity type semiconductor layer and the first reflective layer, and having a greater thickness than a wavelength of the generated light.

摘要翻译： 提供了具有优异的光提取效率的半导体发光器件，以通过增加反射层的总反射率来有效地反射移入器件的光。 根据本发明的一个方面的半导体发光器件包括：依次堆叠的衬底，反射电极，第一导电半导体层，有源层和第二导电类型半导体层。 这里，反射电极包括： 第一反射层，设置在所述基板上，并且包括反射从所述有源层产生的光的导电反射材料; 以及设置在所述第一反射层上的第二反射层，包括反射从所述有源层产生的光的一个或多个介电部分和填充有导电填料的一个或多个接触孔，以将所述第一导电类型半导体层和所述第一反射层 并且具有比所产生的光的波长更大的厚度。

公开(公告)号：US07393710B2

公开(公告)日：2008-07-01

申请号：US11247935

申请日：2005-10-11

申请人： Jin Chul Kim ,  Su Yeol Lee ,  Chang Zoo Kim ,  Sang Heon Han ,  Keun Man Song ,  Tae Jun Kim ,  Seok Beom Choi

发明人： Jin Chul Kim ,  Su Yeol Lee ,  Chang Zoo Kim ,  Sang Heon Han ,  Keun Man Song ,  Tae Jun Kim ,  Seok Beom Choi

IPC分类号： H01L21/00

CPC分类号： H01S5/4031 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01S5/2231 ,  H01S5/4087 ,  H01S2304/04

摘要： The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.

摘要翻译： 本发明涉及一种双波长半导体激光器件，更具体地涉及一种多波长半导体激光器件的制造方法。 在该方法中，提供了具有分隔成至少第一和第二区域的上表面的基板。 然后，形成基板上的第一电介质掩模，仅露出第一区域。 然后，在衬底的第一区域上生长用于第一半导体激光器的外延层。 然后，形成基板上的第二电介质掩模，仅露出第二区域。 然后，在衬底的第二区域上生长用于第二半导体激光器的外延层。

公开(公告)号：US08969895B2

公开(公告)日：2015-03-03

申请号：US13225979

申请日：2011-09-06

申请人： Jae Yoon Kim ,  Jin Bock Lee ,  Seok Min Hwang ,  Su Yeol Lee

发明人： Jae Yoon Kim ,  Jin Bock Lee ,  Seok Min Hwang ,  Su Yeol Lee

IPC分类号： H01L33/00 ,  H01L33/40 ,  H01L33/38 ,  H01L33/42 ,  H01L33/32

CPC分类号： H01L33/005 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0058

摘要： A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.

摘要翻译： 一种半导体发光器件包括：发光结构，其中第一导电半导体层，有源层和第二导电半导体层依次层叠; 形成在所述第一导电半导体层上的第一电极; 形成在所述第二导电半导体层上并由透明材料制成的绝缘层; 反射单元，形成在所述绝缘层上并反射从所述有源层发射的光; 形成在反射单元上的第二电极; 以及形成在所述第二导电半导体层上的透明电极，所述透明电极与所述绝缘层和所述第二电极接触。

公开(公告)号：US08198114B2

公开(公告)日：2012-06-12

申请号：US12909297

申请日：2010-10-21

申请人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

发明人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC分类号： H01L21/56

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/20

摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

摘要翻译： 垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。 与n电极接触的n型氮化物半导体层的表面是平坦的。