公开(公告)号：US4954895A

公开(公告)日：1990-09-04

申请号：US278844

申请日：1988-12-02

申请人： Hajime Akimoto ,  Shinya Ohba

发明人： Hajime Akimoto ,  Shinya Ohba

IPC分类号： H01L27/00 ,  H01L27/146 ,  H04N5/335 ,  H04N5/365 ,  H04N5/369 ,  H04N5/374

CPC分类号： H01L27/14643

摘要： A solid-state imaging device has a plurality of photodiodes (photoelectric conversion elements) formed in a surface of a semiconductor substrate in a matrix configuration and reading means for reading out signal charges stored in the photodiodes in accordance with the incident lights in a predetermined order. This reading means includes active elements, such as MOS type transistors, connected to each of the photodiodes. A MOS type transistor constituting part of theses active elements is provided in the path of the transmitting incident light for the associated photodiode. By this configuration, the area occupied by one picture element is reduced as far as the processing steps allow.

摘要翻译： 固态成像装置具有以矩阵形式形成在半导体衬底的表面中的多个光电二极管（光电转换元件）和用于按照预定顺序根据入射光读出存储在光电二极管中的信号电荷的读取装置 。 该读取装置包括连接到每个光电二极管的有源元件，例如MOS型晶体管。 构成这些有源元件的一部分的MOS型晶体管设置在用于相关光电二极管的透射入射光的路径中。 通过该配置，只要处理步骤允许，就减少一个图像元素所占据的面积。

公开(公告)号：US4825287A

公开(公告)日：1989-04-25

申请号：US063476

申请日：1987-06-18

申请人： Toru Baji ,  Tatsuji Matsuura ,  Toshiro Tsukada ,  Shinya Ohba

发明人： Toru Baji ,  Tatsuji Matsuura ,  Toshiro Tsukada ,  Shinya Ohba

IPC分类号： H04N5/14

CPC分类号： H04N5/14

摘要： According to the present invention, the number of elements of a signal processing circuit or the like can be drastically reduced by conducting a time-multiplex processing. In a transversal filter having a coefficient of symmetry of 16 taps, for example, the prior art requires about 58,000 transistors. In case four signal processing cores (i.e., SPC) having a function of four taps are used, the number of transistors required can be reduced to about 34,000 by a duplexing process. In case two SPCs having a function of eight taps are used, the number can be reduced to about 19,000 by a quadplexing process. In case, moreover, one SPC having a function of sixteen taps is used, the number can be reduced to about 13,000 by an octaplexing process. Here, the reason why the number of elements is not halved even if the number of the SPCs is halved is that the number of elements to be used in control circuits, memories and so on increases.

摘要翻译： 根据本发明，通过进行时间复用处理，可以大大减少信号处理电路等的元件数量。 在具有16个抽头的对称系数的横向滤波器中，例如，现有技术需要约58,000个晶体管。 在使用具有四个抽头功能的四个信号处理核心（即，SPC）的情况下，通过双工处理，所需的晶体管数量可以减少到约34,000个。 在使用具有八个抽头功能的两个SPC的情况下，通过四重处理可将数量减少到约19,000个。 此外，在使用具有十六个抽头功能的一个SPC的情况下，也可以通过八次打印处理将数量减少到约13,000个。 这里，即使SPC的数量减半，元件的数量不减半的原因在于控制电路，存储器等中要使用的元件的数量增加。

公开(公告)号：US4942474A

公开(公告)日：1990-07-17

申请号：US281220

申请日：1988-12-08

申请人： Hajime Akimoto ,  Shinya Ohba ,  Toshifumi Ozaki

发明人： Hajime Akimoto ,  Shinya Ohba ,  Toshifumi Ozaki

IPC分类号： H04N5/3745

CPC分类号： H04N3/1512

摘要： A solid-state imaging device including a plurality of photoelectric conversion elements (for example, photodiodes) arranged on a semiconductor substrate so as to form a matrix and read-out means for reading out signal charges which are stored in the photodiodes in accordance with incident light, in a predetermined order, is disclosed in which device the read-out means is made up of a plurality of active elements such as a MOS transistor connected to a photodiode, part of the active elements are used as a pixel amplifier for amplifying the signal charge of the photodiode in such a manner that the signal charge is converted into a current or voltage, the output of the pixel amplifier at a time the signal charge of the photodiode is not applied to the input part of the pixel amplifier and the output of the pixel amplifier at a time the signal charge of the photodiode is applied to the input part of the pixel amplifier are separately stored in a pair of storage means, and the outputs of a plurality of pairs of storage means are successively taken out in accordance with a scanning signal.

摘要翻译： 一种固态成像装置，其包括布置在半导体衬底上的多个光电转换元件（例如，光电二极管），以形成矩阵和读出装置，用于根据事件读出存储在光电二极管中的信号电荷 公开了以预定顺序的光，读出装置由多个有源元件（例如连接到光电二极管的MOS晶体管）构成，其中有源元件的一部分用作像素放大器，用于放大 光电二极管的信号电荷使得信号电荷被转换为电流或电压，在光电二极管的信号电荷未被施加到像素放大器的输入部分的时间处的像素放大器的输出和输出 在光电二极管的信号电荷施加到像素放大器的输入部分的时间分别存储在一对存储装置中，并且输出的像素放大器的输出 根据扫描信号依次取出多对存储装置。

公开(公告)号：US4903122A

公开(公告)日：1990-02-20

申请号：US142919

申请日：1988-01-12

申请人： Toshifumi Ozaki ,  Naoki Ozawa ,  Shinya Ohba ,  Itaru Mimura

发明人： Toshifumi Ozaki ,  Naoki Ozawa ,  Shinya Ohba ,  Itaru Mimura

IPC分类号： H04N9/04

CPC分类号： H04N9/045

摘要： A high resolution solid-state color imaging apparatus having two-dimensionally disposed photoelectric sensors are arranged in rows and columns each having a color spectral responsivity characteristic such as by employing color filters. Each of the photoelectric sensors is scanned so as to obtain an intensity signal with respect to each row of each field, and wherein scanning of each field is for the same number of rows as that of each frame. Intensity signals are obtained only by the scanned output of each row. Additional intensity signals equal to half the number of said first mentioned intensity signals are obtained by a 2:1 subsampling of bandwidth-restricted signals by a filter along the vertical temporal frequency, thereby realizing high vertical resolution by the photoelectric image sensors of conventional row numbers and having compatibility with a conventional NTSC system and, furthermore, eliminating aliasing distortion.

摘要翻译： 具有二维设置的光电传感器的高分辨率固体彩色成像装置以各种具有色谱响应特性的行和列布置，例如通过使用滤色器。 每个光电传感器被扫描以获得相对于每个场的每一行的强度信号，并且其中每个场的扫描是与每个帧相同数量的行。 强度信号仅通过每行的扫描输出获得。 通过沿着垂直时间频率的滤波器对带宽限制信号进行2:1的子采样来获得等于所述第一提到的强度信号数量的一半的附加强度信号，从而通过常规行号的光电图像传感器实现高垂直分辨率 并且具有与常规NTSC系统的兼容性，并且还消除了混叠失真。

公开(公告)号：US4814848A

公开(公告)日：1989-03-21

申请号：US58825

申请日：1987-06-05

申请人： Hajime Akimoto ,  Harushisa Ando ,  Toshifumi Ozaki ,  Hideyuki Ono ,  Shinya Ohba ,  Masaaki Nakai ,  Norio Koike

发明人： Hajime Akimoto ,  Harushisa Ando ,  Toshifumi Ozaki ,  Hideyuki Ono ,  Shinya Ohba ,  Masaaki Nakai ,  Norio Koike

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L29/78 ,  H01L27/14 ,  H01L29/06

CPC分类号： H01L27/14887

摘要： A solid-state imaging device having a plurality of semiconductor layers of a first conductivity type for photo-electric conversion provided on the surface of a first semiconductor layer of a second conductivity type which is formed on a part of one surface of a semiconductor substrate of the first conductivity type, a semiconductor layer of the first conductivity type for charge transfer provided on the surface of a second semiconductor layer of the second conductivity type which is formed on a part of the surface of the substrate, and a signal output means. The first semiconductor layer of the second conductivity type and the second semiconductor layer of the second conductivity type are formed in different steps so that the first semiconductor layer is disposed deeper than the second semiconductor layer.

摘要翻译： 一种具有多个第一导电类型的用于光电转换的半导体层的固态成像装置，其设置在第二导电类型的第一半导体层的表面上，该第二半导体层形成在半导体衬底的一个表面的一部分上 第一导电型，形成在基板表面的一部分上的第二导电类型的第二半导体层的表面上的用于电荷转移的第一导电类型的半导体层和信号输出装置。 第二导电类型的第一半导体层和第二导电类型的第二半导体层以不同的步骤形成，使得第一半导体层被设置为比第二半导体层更深。

公开(公告)号：US4609407A

公开(公告)日：1986-09-02

申请号：US563036

申请日：1983-12-19

申请人： Tamura Masao ,  Hirotsugu Kozuka ,  Yasuo Wada ,  Makoto Ohkura ,  Tamura Hiroshi ,  Takashi Tokuyama ,  Takahiro Okabe ,  Osamu Minato ,  Shinya Ohba

发明人： Tamura Masao ,  Hirotsugu Kozuka ,  Yasuo Wada ,  Makoto Ohkura ,  Tamura Hiroshi ,  Takashi Tokuyama ,  Takahiro Okabe ,  Osamu Minato ,  Shinya Ohba

IPC分类号： H01L21/268 ,  H01L21/822 ,  H01L27/02 ,  H01L27/06 ,  H01L29/04 ,  H01L21/265 ,  H01L21/26

CPC分类号： H01L21/8221 ,  H01L21/268 ,  H01L27/0233 ,  H01L27/0688 ,  H01L29/04

摘要： Herein disclosed is a semiconductor device having at least one lower resistance region formed in the single-crystalline semiconductor film which is so formed to continuously coat both a single-crystalline semiconductor substrate and an insulating film formed on the surface of the substrate.Since the aforementioned single-crystalline semiconductor film is used, many advantages which are not attained from the semiconductor device according to the prior art can be obtained.The aforementioned single-crystalline semiconductor film is formed by irradiating a polycrystalline or amorphous semiconductor film with a laser beam.

摘要翻译： 这里公开了一种半导体器件，其具有形成在单晶半导体膜中的至少一个下电阻区域，该至少一个下电阻区域被形成为连续地涂覆单晶半导体衬底和形成在衬底表面上的绝缘膜。 由于使用上述单晶半导体膜，因此可以获得从现有技术的半导体器件中获得的许多优点。 通过用激光束照射多晶或非晶半导体膜来形成上述单晶半导体膜。

公开(公告)号：US4559550A

公开(公告)日：1985-12-17

申请号：US548576

申请日：1983-11-04

申请人： Norio Koike ,  Shinya Ohba ,  Toshiaki Masuhara

发明人： Norio Koike ,  Shinya Ohba ,  Toshiaki Masuhara

IPC分类号： H01L21/339 ,  H01L27/148 ,  H01L29/762 ,  H04N5/335 ,  H04N5/341 ,  H04N5/357 ,  H04N5/3728 ,  H01L29/78 ,  G11C19/28 ,  H01L27/14 ,  H01L31/00

CPC分类号： H04N3/1575 ,  H01L27/14831 ,  H01L27/14868

摘要： A solid-state imager includes vertical CCD shift registers for transferring photogenerated signal charge packets produced by a group of photodiodes belonging to a first series, vertical CCD shift registers for transferring photogenerated signal charge packets produced by photodiodes belonging to a second series, a horizontal CCD shift register for receiving signal charge packets shifted through both the vertical shift registers and transferring them to an output circuit and a coupling circuit provided between the horizontal CCD shift register and both the vertical CCD shift registers, all the components being formed on a single semiconductor substrate. Through the coupling circuit, one of two series of photogenerated signal packets transferred from both the vertical CCD shift registers located adjacent to each other are transferred to the horizontal CCD shift register beneath a set of storage electrodes thereof, which is followed by the transfer of the other series of signal charge packets to the horizontal shift register beneath other set of storage electrode. The horizontal CCD shift register transfers sequentially and alternately two series of the photogenerated signal charge packets to an output circuit. Two series of the signal charge packets can thus be transferred through the single horizontal CCD shift register.

摘要翻译： 固态成像器包括垂直CCD移位寄存器，用于传送由属于第一系列的一组光电二极管产生的光生信号电荷包，用于传送由属于第二系列的光电二极管产生的光生信号电荷包的垂直CCD移位寄存器，水平CCD 移位寄存器，用于接收通过两个垂直移位寄存器移位的信号电荷数据包，并将它们传送到输出电路;以及耦合电路，设置在水平CCD移位寄存器和两个垂直CCD移位寄存器之间，所有元件都形成在单个半导体衬底上 。 通过耦合电路，从彼此相邻的垂直CCD移位寄存器传输的两个系列的光生成信号包中的一个被传送到其一组存储电极下方的水平CCD移位寄存器，其后是传送 其他系列的信号电荷包到水平移位寄存器下面的其他组存储电极。 水平CCD移位寄存器将两个系列的光生信号电荷分组顺序地和交替地传送到输出电路。 因此可以通过单个水平CCD移位寄存器传送两个系列的信号电荷包。

公开(公告)号：US4155094A

公开(公告)日：1979-05-15

申请号：US837709

申请日：1977-09-29

申请人： Shinya Ohba ,  Kyotake Uchiumi

发明人： Shinya Ohba ,  Kyotake Uchiumi

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L31/113 ,  H04N5/335 ,  H04N5/345 ,  H04N5/357 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H01L27/14

CPC分类号： H01L31/113 ,  H01L27/14643

摘要： In a semiconductor photoelectric device comprising a plurality of photodiodes, MOS transistor switches and signal output means which are provided on a semiconductor substrate, a solid-state imaging device characterized in that said each photodiode is constructed of a PN-junction diode and an MIS or MOS diode. Means are provided for permitting incident light to fall on only the PN-junction diode.

摘要翻译： 在包括设置在半导体衬底上的多个光电二极管，MOS晶体管开关和信号输出装置的半导体光电装置中，固态成像装置的特征在于，所述每个光电二极管由PN结二极管和MIS构成， MOS二极管。 提供了允许入射光仅落在PN结二极管上的装置。

公开(公告)号：US4809075A

公开(公告)日：1989-02-28

申请号：US109319

申请日：1987-10-19

申请人： Hajime Akimoto ,  Toshifumi Ozaki ,  Shinya Ohba

发明人： Hajime Akimoto ,  Toshifumi Ozaki ,  Shinya Ohba

IPC分类号： H01L27/146 ,  H01L27/148 ,  H04N5/335 ,  H04N5/357 ,  H04N5/359 ,  H04N5/363 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/378 ,  H04N3/14

CPC分类号： H04N5/37457 ,  H01L27/14818 ,  H01L27/14831 ,  H04N5/378

摘要： A solid-state imaging device is constructed by integrating a plurality of face plate elements of an imager in the shape of a matrix on a semiconductor substrate. The face plate elements are formed of photodiodes, in which charges corresponding to incident light are accumulated. The charges are converted into currents or voltages by a plurality of amplifying means disposed in the matrix and which are provided adjacent to the photodiodes. The currents or the voltages obtained through conversion are delivered out of the matrix through signal lines. To the signal lines a correlated double sampling circuit is connected, and this curcuit detects a difference in outputs of the amplifying means between a case when the charges of the photodiodes are not present in the input portions of the amplifying means and a case when they are present therein.

摘要翻译： 固态成像装置通过在半导体衬底上集成成像器形状的成像器的多个面板元件而构成。 面板元件由光电二极管形成，其中对应于入射光的电荷被累积。 通过设置在矩阵中并与光电二极管相邻设置的多个放大装置将电荷转换成电流或电压。 通过转换获得的电流或电压通过信号线传送出矩阵。 对于信号线，连接相关的双采样电路，并且该电路在放大装置的输入部分中不存在光电二极管的电荷的情况与它们之间的情况下检测放大装置的输出的差异 在其中存在。

公开(公告)号：US4578707A

公开(公告)日：1986-03-25

申请号：US662133

申请日：1984-10-18

申请人： Naoki Ozawa ,  Toshiyuki Akiyama ,  Shuusaku Nagahara ,  Shinya Ohba ,  Haruhisa Ando ,  Toshifumi Ozaki

发明人： Naoki Ozawa ,  Toshiyuki Akiyama ,  Shuusaku Nagahara ,  Shinya Ohba ,  Haruhisa Ando ,  Toshifumi Ozaki

IPC分类号： H04N5/217 ,  H04N3/12

CPC分类号： H04N5/2175

摘要： Herein disclosed is a method of reducing the vertical smears which are generated in a solid state image sensor including a plurality of vertical signal lines for transferring signal charges in a vertical direction and at least one charge transfer device for transferring the signal charges in a horizontal direction.The smear charges stored in the vertical signal lines and the signal charges generated in a photoelectric conversion element in response to an incident ray are inputted separately of each other for a horizontal blanking period to the charge transfer device for the horizontal transfer. During a tracing period, a smear voltage and a signal voltage are outputted separately of each other from said charge transfer device. The smear voltage adjusted is subtracted from the signal voltage to eliminate the smear component which has been mixed into the signal voltage.

摘要翻译： 这里公开了一种减少在包括用于在垂直方向上传送信号电荷的多个垂直信号线的固态图像传感器中产生的垂直涂片的方法，以及用于在水平方向上传送信号电荷的至少一个电荷转移装置 。 存储在垂直信号线中的拖尾电荷和在光电转换元件中产生的响应于入射光线的信号电荷在水平消隐期间彼此分开地输入到用于水平传送的电荷转移装置。 在跟踪期间，污染电压和信号电压彼此分离地从所述电荷转移装置输出。 从信号电压中减去调整的污迹电压，以消除已混入信号电压的污迹分量。