Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof
    21.
    发明授权
    Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof 有权
    具有结晶区域的氧化物半导体的半导体装置及其制造方法

    公开(公告)号:US08633480B2

    公开(公告)日:2014-01-21

    申请号:US12938402

    申请日:2010-11-03

    IPC分类号: H01L29/786

    摘要: An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.

    摘要翻译: 本发明的实施例的目的是制造具有高显示质量和高可靠性的半导体器件,其包括能够使用具有良好电特性的晶体管的一个衬底上能够高速操作的像素部分和驱动器电路部分,以及 高可靠性作为开关元件。 在驱动器电路部分和像素部分中形成两个晶体管,每个晶体管的一个表面侧上包括结晶区域的氧化物半导体层用作有源层。 可以通过选择确定通道位置的栅电极层的位置来选择晶体管的电特性。 因此,可以制造包括能够高速操作的驱动电路部分和一个基板上的像素部分的半导体器件。

    Semiconductor Display Device
    22.
    发明申请
    Semiconductor Display Device 有权
    半导体显示设备

    公开(公告)号:US20090159890A1

    公开(公告)日:2009-06-25

    申请号:US12336996

    申请日:2008-12-17

    IPC分类号: H01L33/00

    摘要: A semiconductor display device using a light-emitting element, which can suppress luminance unevenness among pixels due to the potential drop of a wiring, is provided. Power supply lines to which a power supply potential is supplied are electrically connected to each other in a display region where a plurality of pixels are arranged. Further, an interlayer insulating film is formed over a wiring (an auxiliary power supply line) for electrically connecting the power supply lines to each other in the display region and a gate electrode of a transistor included in a pixel; and the power supply lines are formed over the interlayer insulating film which is formed over the auxiliary power supply line and the gate electrode. Furthermore, a wiring (an auxiliary wiring) formed over the interlayer insulating film is electrically or directly connected to the auxiliary power supply line.

    摘要翻译: 提供一种使用能够抑制由于布线的电位下降引起的像素之间的亮度不均匀的发光元件的半导体显示装置。 供给电源电位的电源线在布置有多个像素的显示区域中彼此电连接。 此外,在用于将显示区域中的电源线彼此电连接并且包括在像素中的晶体管的栅电极的布线(辅助电源线)上形成层间绝缘膜; 并且在辅助电源线和栅电极之间形成的层间绝缘膜上形成电源线。 此外,形成在层间绝缘膜上的布线(辅助布线)与辅助电源线电连接或直接连接。

    Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof
    23.
    发明授权
    Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof 有权
    具有结晶区域的氧化物半导体的半导体装置及其制造方法

    公开(公告)号:US09093328B2

    公开(公告)日:2015-07-28

    申请号:US12938533

    申请日:2010-11-03

    摘要: An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.

    摘要翻译: 晶体管使用本征或基本上固有的并且包括氧化物半导体层的表面部分中的结晶区域的氧化物半导体层。 使用从氧化物半导体去除作为电子给体(供体)的杂质并且具有比硅半导体更大的能隙的本征或本质上的本征半导体。 可以通过控制一对导电膜的电位来控制晶体管的电特性,所述一对导电膜相对于氧化物半导体层彼此相对设置,每个具有布置在其间的绝缘膜,使得沟道的位置 确定在氧化物半导体层中形成的氧化物半导体层。

    Semiconductor display device
    25.
    发明授权
    Semiconductor display device 有权
    半导体显示装置

    公开(公告)号:US07977678B2

    公开(公告)日:2011-07-12

    申请号:US12336996

    申请日:2008-12-17

    IPC分类号: H01L29/04

    摘要: A semiconductor display device using a light-emitting element, which can suppress luminance unevenness among pixels due to the potential drop of a wiring, is provided. Power supply lines to which a power supply potential is supplied are electrically connected to each other in a display region where a plurality of pixels are arranged. Further, an interlayer insulating film is formed over a wiring (an auxiliary power supply line) for electrically connecting the power supply lines to each other in the display region and a gate electrode of a transistor included in a pixel; and the power supply lines are formed over the interlayer insulating film which is formed over the auxiliary power supply line and the gate electrode. Furthermore, a wiring (an auxiliary wiring) formed over the interlayer insulating film is electrically or directly connected to the auxiliary power supply line.

    摘要翻译: 提供一种使用能够抑制由于布线的电位下降引起的像素之间的亮度不均匀的发光元件的半导体显示装置。 供给电源电位的电源线在布置有多个像素的显示区域中彼此电连接。 此外,在用于将显示区域中的电源线彼此电连接并且包括在像素中的晶体管的栅电极的布线(辅助电源线)上形成层间绝缘膜; 并且在辅助电源线和栅电极之间形成的层间绝缘膜上形成电源线。 此外,形成在层间绝缘膜上的布线(辅助布线)与辅助电源线电连接或直接连接。

    Display device and electronic device including display device
    26.
    发明授权
    Display device and electronic device including display device 有权
    显示装置和电子装置包括显示装置

    公开(公告)号:US08890781B2

    公开(公告)日:2014-11-18

    申请号:US12906538

    申请日:2010-10-18

    IPC分类号: G09G3/32 H01L27/12

    摘要: Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.

    摘要翻译: 目的是提供一种降低功耗的显示装置,以提供其功耗降低并且能够在黑暗处长期使用的自发光显示装置。 使用其中使用高度纯化的氧化物半导体并且像素可以保持一定状态(已经写入视频信号的状态)的薄膜晶体管形成电路。 结果,即使在显示静止图像的情况下,也能够容易地进行稳定的动作。 此外,可以延长驱动电路的操作间隔,这导致显示装置的功耗的降低。 此外,在自发光显示装置的像素部分中使用光存储材料来存储光,由此显示装置可以在黑暗的地方长时间使用。

    Manufacturing method of thin film transistor and liquid crystal display device
    28.
    发明授权
    Manufacturing method of thin film transistor and liquid crystal display device 有权
    薄膜晶体管和液晶显示器件的制造方法

    公开(公告)号:US08546161B2

    公开(公告)日:2013-10-01

    申请号:US13226822

    申请日:2011-09-07

    IPC分类号: H01L21/00

    摘要: Etching of a semiconductor layer including a part over a gate wiring and formation of a contact hole for connection between a pixel electrode and a drain electrode are performed by one-time photolithography step and one-time etching step; thus, the number of photolithography steps is reduced. The exposed part of the gate wiring is covered by an insulating layer, and this insulating layer also functions as a spacer for maintaining a space for a liquid crystal layer. By the reduction in the number of photolithography steps, a liquid crystal display device can be provided at lower cost and higher productivity. Using an oxide semiconductor for the semiconductor layer can realize a liquid crystal display device with low power consumption and high reliability.

    摘要翻译: 通过一次光刻步骤和一次蚀刻步骤进行包括栅极布线上的部分的半导体层的蚀刻和用于像素电极和漏极之间的连接的接触孔的形成; 因此,光刻步骤的数量减少。 栅极布线的暴露部分被绝缘层覆盖,并且该绝缘层还用作用于保持液晶层的空间的间隔物。 通过减少光刻步骤的数量,可以以更低的成本和更高的生产率提供液晶显示装置。 使用半导体层的氧化物半导体可以实现低功耗,高可靠性的液晶显示装置。

    Semiconductor display device
    30.
    发明授权
    Semiconductor display device 有权
    半导体显示装置

    公开(公告)号:US08294154B2

    公开(公告)日:2012-10-23

    申请号:US13179824

    申请日:2011-07-11

    IPC分类号: H01L29/04

    摘要: A semiconductor display device using a light-emitting element, which can suppress luminance unevenness among pixels due to the potential drop of a wiring, is provided. Power supply lines to which a power supply potential is supplied are electrically connected to each other in a display region where a plurality of pixels are arranged. Further, an interlayer insulating film is formed over a wiring (an auxiliary power supply line) for electrically connecting the power supply lines to each other in the display region and a gate electrode of a transistor included in a pixel; and the power supply lines are formed over the interlayer insulating film which is formed over the auxiliary power supply line and the gate electrode. Furthermore, a wiring (an auxiliary wiring) formed over the interlayer insulating film is electrically or directly connected to the auxiliary power supply line.

    摘要翻译: 提供一种使用能够抑制由于布线的电位下降引起的像素之间的亮度不均匀的发光元件的半导体显示装置。 供给电源电位的电源线在布置有多个像素的显示区域中彼此电连接。 此外,在用于将显示区域中的电源线彼此电连接并且包括在像素中的晶体管的栅电极的布线(辅助电源线)上形成层间绝缘膜; 并且在辅助电源线和栅电极之间形成的层间绝缘膜上形成电源线。 此外,形成在层间绝缘膜上的布线(辅助布线)与辅助电源线电连接或直接连接。