公开(公告)号：US07579220B2

公开(公告)日：2009-08-25

申请号：US11383694

申请日：2006-05-16

申请人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

发明人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/1288 ,  H01L27/14623 ,  H01L27/3244 ,  H01L29/78645

摘要： It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes.

摘要翻译： 本发明的目的是在有限的区域中形成多个元件，以减少用于积分的元件所占据的面积，从而进一步提高分辨率（增加像素数），减小每个显示像素间距，同时小型化， 并且驱动像素部分的驱动电路的集成可以在具有EL元件的液晶显示装置和发光装置等半导体装置中进行。 将具有由衍射光栅图案或半透明膜构成的辅助图案的光掩模或掩模版施加到用于形成栅电极的光刻工艺以形成复杂的栅电极 。 此外，只要通过改变掩模而不增加处理次数，就可以在同一基板上形成具有上述多栅结构的顶栅TFT和具有单栅结构的顶栅TFT。

公开(公告)号：US07306978B2

公开(公告)日：2007-12-11

申请号：US10941837

申请日：2004-09-16

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda ,  Keiko Saito ,  Hisao Ikeda

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda ,  Keiko Saito ,  Hisao Ikeda

IPC分类号： H01L21/00

CPC分类号： H01L51/56 ,  H01L27/3244 ,  H01L27/3246 ,  H01L51/5203 ,  H01L51/5262 ,  H01L2251/5315 ,  H01L2251/5323

摘要： The present invention provides a highly stable light emitting device having high light-emitting efficiency (light-extraction efficiency) with high luminance and low power consumption, and a method of manufacturing thereof. A partition wall and a heat-resistant planarizing film are formed of a same material so as to be well-adhered to each other, thereby reducing material costs. Either an anode or a cathode is formed on the heat-resistant planarizing film. The partition wall and the heat-resistant planarizing film is adhered to each other without inserting a film having different refractive index therebetween, and therefore reflection of light is not caused in an interface.

摘要翻译： 本发明提供了具有高亮度和低功耗的高发光效率（光提取效率）的高度稳定的发光器件及其制造方法。 分隔壁和耐热平面化膜由相同的材料形成以便彼此良好地粘附，从而降低材料成本。 在耐热平面化膜上形成阳极或阴极。 分隔壁和耐热平面化膜彼此粘合而不插入其间具有不同折射率的膜，因此在界面上不会引起光的反射。

公开(公告)号：US20060275710A1

公开(公告)日：2006-12-07

申请号：US11440175

申请日：2006-05-25

申请人： Shunpei Yamazaki ,  Tetsuya Kakehata ,  Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori

发明人： Shunpei Yamazaki ,  Tetsuya Kakehata ,  Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori

IPC分类号： G03F7/26

CPC分类号： H01L21/02683 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1285 ,  H01L27/1288

摘要： To provide a semiconductor device having a circuit with high operating performance and high reliability, and improve the reliability of the semiconductor device, thereby improving the reliability of an electronic device having the same. The aforementioned object is achieved by combining a step of crystallizing a semiconductor layer by irradiation with continuous wave laser beams or pulsed laser beams with a repetition rate of 10 MHz or more, while scanning in one direction; a step of photolithography with the use of a photomask or a leticle including an auxiliary pattern which is formed of a diffraction grating pattern or a semi-transmissive film having a function of reducing the light intensity; and a step of performing oxidation, nitridation, or surface-modification to the surface of the semiconductor film, an insulating film, or a conductive film, with high-density plasma with a low electron temperature.

公开(公告)号：US20110170084A1

公开(公告)日：2011-07-14

申请号：US13069491

申请日：2011-03-23

申请人： Hideto Ohnuma ,  Masaharu Nagai

发明人： Hideto Ohnuma ,  Masaharu Nagai

IPC分类号： G03B27/72

CPC分类号： H01L27/1288 ,  G03F1/50 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78621

摘要： The present invention provides a light exposure mask which can form a photoresist layer in a semi-transmissive portion with uniform thickness, and a method for manufacturing a semiconductor device in which the number of photolithography steps (the number of masks) necessary for manufacturing a TFT substrate is reduced by using the light exposure mask. A light exposure mask is used, which includes a transmissive portion, a light shielding portion, and a semi-transmissive portion having a light intensity reduction function where lines and spaces are repeatedly formed, wherein the sum of a line width L of a light shielding material and a space width S between light shielding materials in the semi-transmissive portion satisfies a conditional expression (2n/3)×m≦L+S≦(6n/5)×m when a resolution of a light exposure apparatus is represented by n and a projection magnification is represented by 1/m (m≧1).

摘要翻译： 本发明提供一种能够在均匀厚度的半透射部分中形成光致抗蚀剂层的曝光掩模，以及制造半导体器件的方法，其中制造TFT所需的光刻步骤数（掩模数） 通过使用曝光掩模来减少衬底。 使用曝光掩模，其包括透射部分，遮光部分和具有重复形成线和间隔的光强降低功能的半透射部分，其中遮光层的线宽L之和 材料和半透射部分的遮光材料之间的空间宽度S满足条件表达式（2n / 3）×m＆nlE; L + S＆nlE;（6n / 5）×m，当曝光装置的分辨率由 n，投影倍率由1 / m（m≥1）表示。

公开(公告)号：US07829432B2

公开(公告)日：2010-11-09

申请号：US12489594

申请日：2009-06-23

申请人： Hideto Ohnuma ,  Kenichiro Makino ,  Yoichi Iikubo ,  Masaharu Nagai ,  Aiko Shiga

发明人： Hideto Ohnuma ,  Kenichiro Makino ,  Yoichi Iikubo ,  Masaharu Nagai ,  Aiko Shiga

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L29/66772 ,  H01L29/78621

摘要： To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.

摘要翻译： 即使使用含有氮的绝缘膜作为接合层，为了提高接合强度并提高SOI基板的接合半导体基板和基板的可靠性，在半导体基板侧设置氧化膜，氮 在基底基板侧设置含氧层，并且形成在半导体基板上的氧化膜和形成在基底基板上的含氮层彼此结合。 此外，在将形成在半导体衬底上的氧化膜和形成在基底衬底上的含氮层彼此粘合之前，对氧化物膜和含氮层中的至少一种进行等离子体处理。 可以在施加偏置电压的状态下进行等离子体处理。

公开(公告)号：US6020601A

公开(公告)日：2000-02-01

申请号：US189679

申请日：1998-11-13

申请人： Hiroyasu Noguchi ,  Eisaku Kato ,  Masaharu Nagai

发明人： Hiroyasu Noguchi ,  Eisaku Kato ,  Masaharu Nagai

IPC分类号： H01L33/06 ,  H01L33/28 ,  H01S5/00 ,  H01L33/00

CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/06

摘要： A semiconductor light-emitting device longer in life time and higher in reliability is provided which is formed of, on a substrate (1), a first conductivity type cladding layer (3) and a second conductivity type cladding layer (7) made of Zn.sub.x Mg.sub.Y Be.sub.1-x-y S.sub.Z Se.sub.1-z (0

摘要翻译： 提供了一种寿命长且可靠性更高的半导体发光器件，其在基板（1），由Zn x Mg y B e 1制成的第一导电型包覆层（3）和第二导电型包覆层（7） -x-ySZSe1-z（0

公开(公告)号：US08723417B2

公开(公告)日：2014-05-13

申请号：US13088578

申请日：2011-04-18

申请人： Kaoru Tsuchiya ,  Aya Anzai ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda

发明人： Kaoru Tsuchiya ,  Aya Anzai ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： H01L33/52 ,  H01L27/3244 ,  H01L27/3276 ,  H01L51/5246 ,  H01L2251/5323 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to provide such a sealing structure that a material to be a deterioration factor such as water or oxygen is prevented from entering from external and sufficient reliability is obtained in a display using an organic or inorganic electroluminescent element. In view of the above object, focusing on permeability of an interlayer insulating film, deterioration of an electroluminescent element is suppressed and sufficient reliability is obtained by preventing water entry from an interlayer insulating film according to the present invention.

摘要翻译： 本发明的目的是提供一种这样的密封结构，即，在使用有机或无机电致发光元件的显示器中，可以获得防止外部和水中的劣化因素等水分或氧气劣化的材料的密封结构。 鉴于上述目的，着眼于层间绝缘膜的磁导率，抑制了电致发光元件的劣化，并且通过防止水从本发明的层间绝缘膜进入而获得足够的可靠性。

公开(公告)号：US08426945B2

公开(公告)日：2013-04-23

申请号：US13225752

申请日：2011-09-06

申请人： Masaharu Nagai ,  Takafumi Mizoguchi

发明人： Masaharu Nagai ,  Takafumi Mizoguchi

IPC分类号： H01L29/06

CPC分类号： H01L29/78648 ,  H01L29/6675 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621

摘要： To provide a semiconductor device in which a channel formation region can be thinned without adversely affecting a source region and a drain region through a simple process and a method for manufacturing the semiconductor device. In the method for manufacturing a semiconductor device, a semiconductor film, having a thickness smaller than a height of a projection of a substrate, is formed over a surface of the substrate having the projections; the semiconductor film is etched to have an island shape with a resist used as a mask; the resist is etched to expose a portion of the semiconductor film which covers a top surface of the projection; and the exposed portion of the semiconductor film is etched to be thin, while the adjacent portions of the semiconductor film on both sides of the projection remain covered with the resist.

摘要翻译： 为了提供一种半导体器件，其中可以通过简单的工艺减少沟道形成区域而不会不利地影响源极区域和漏极区域，以及制造半导体器件的方法。 在半导体装置的制造方法中，在具有突起的基板的表面上形成厚度小于基板突起的高度的半导体膜， 蚀刻半导体膜以具有岛状，其中抗蚀剂用作掩模; 蚀刻抗蚀剂以暴露覆盖突起的顶表面的半导体膜的一部分; 并且半导体膜的暴露部分被蚀刻为薄，同时半导体膜在投影两侧的相邻部分保持被抗蚀剂覆盖。

公开(公告)号：US08198173B2

公开(公告)日：2012-06-12

申请号：US12910320

申请日：2010-10-22

申请人： Hideto Ohnuma ,  Kenichiro Makino ,  Yoichi Iikubo ,  Masaharu Nagai ,  Aiko Shiga

发明人： Hideto Ohnuma ,  Kenichiro Makino ,  Yoichi Iikubo ,  Masaharu Nagai ,  Aiko Shiga

IPC分类号： H01L21/46

CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L29/66772 ,  H01L29/78621

摘要： To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.

摘要翻译： 即使使用含有氮的绝缘膜作为接合层，为了提高接合强度并提高SOI基板的接合半导体基板和基板的可靠性，在半导体基板侧设置氧化膜，氮 在基底基板侧设置含氧层，并且形成在半导体基板上的氧化膜和形成在基底基板上的含氮层彼此结合。 此外，在将形成在半导体衬底上的氧化膜和形成在基底衬底上的含氮层彼此粘合之前，对氧化物膜和含氮层中的至少一种进行等离子体处理。 可以在施加偏置电压的状态下进行等离子体处理。

公开(公告)号：US20110248313A1

公开(公告)日：2011-10-13

申请号：US13088578

申请日：2011-04-18

申请人： Kaoru Tsuchiya ,  Aya Anzai ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda

发明人： Kaoru Tsuchiya ,  Aya Anzai ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda

IPC分类号： H01L33/52

CPC分类号： H01L33/52 ,  H01L27/3244 ,  H01L27/3276 ,  H01L51/5246 ,  H01L2251/5323 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to provide such a sealing structure that a material to be a deterioration factor such as water or oxygen is prevented from entering from external and sufficient reliability is obtained in a display using an organic or inorganic electroluminescent element. In view of the above object, focusing on permeability of an interlayer insulating film, deterioration of an electroluminescent element is suppressed and sufficient reliability is obtained by preventing water entry from an interlayer insulating film according to the present invention.

摘要翻译： 本发明的目的是提供一种这样的密封结构，即在使用有机或无机电致发光元件的显示器中，可以获得防止外部和水中的劣化因素等水分或氧气的材料进入的可靠性的密封结构。 鉴于上述目的，着眼于层间绝缘膜的磁导率，抑制了电致发光元件的劣化，并且通过防止水从本发明的层间绝缘膜进入而获得足够的可靠性。