PHOTORESIST TOPCOAT FOR A PHOTOLITHOGRAPHIC PROCESS
    27.
    发明申请
    PHOTORESIST TOPCOAT FOR A PHOTOLITHOGRAPHIC PROCESS 有权
    用于光刻机工艺的光刻胶贴片

    公开(公告)号:US20090011377A1

    公开(公告)日:2009-01-08

    申请号:US12128129

    申请日:2008-05-28

    IPC分类号: G03F7/20

    摘要: A method of forming an image using a topcoat composition. A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas TmR3 where m is equal to 8, 10 or 12 and QnMnR1,R2,R3 where n is equal to 8, 10 or 12 are provided. The functional groups include aqueous base soluble moieties. Mixtures of the functionalized polyhedral oligomeric silsesquioxanes derivatives are highly suitable as a topcoat for photoresist in photolithography and immersion photolithography applications.

    摘要翻译: 使用面漆组合物形成图像的方法。 提供了式TmR3的官能化多面体低聚倍半硅氧烷衍生物,其中m等于8,10或12,QnMnR1,R2,R3其中n等于8,10或12的组合物。 官能团包括碱水溶性部分。 官能化多面体低聚倍半硅氧烷衍生物的混合物非常适合用作光刻和浸没光刻应用中的光致抗蚀剂的顶涂层。

    Photoresist composition
    30.
    发明授权
    Photoresist composition 失效
    光刻胶组成

    公开(公告)号:US06806026B2

    公开(公告)日:2004-10-19

    申请号:US10159635

    申请日:2002-05-31

    IPC分类号: G03F7039

    摘要: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula: where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

    摘要翻译: 提供了一种光致抗蚀剂组合物,其包括具有至少一种具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物:其中R 1表示氢(H),1-20个碳的直链或支链烷基,或半或全氟 1〜20个碳原子的直链或支链烷基; 并且其中R 2表示未取代的脂族基团或具有连接在取代的脂族基团的每个碳上的零个或一个三氟甲基(CF 3)基团的取代的脂族基团,或取代或未取代的芳族基团; 并且其中R 3表示氢(H),甲基(CH 3),三氟甲基(CF 3),二氟甲基(CHF 2),氟甲基(CH 2 F)或半或全氟化脂族链; 并且其中R 4表示三氟甲基(CF 3),二氟甲基(CHF 2),氟甲基(CH 2 F)或半或全氟取代或未取代的脂族基团。 本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。