公开(公告)号：US20090084757A1

公开(公告)日：2009-04-02

申请号：US11863886

申请日：2007-09-28

Applicant: Yuri Erokhin ,  Steven R. Walther ,  Peter D. Nunan

Inventor： Yuri Erokhin ,  Steven R. Walther ,  Peter D. Nunan

IPC: C23C14/00 ,  B44C1/22

CPC classification number: H01J37/3053 ,  H01J2237/30455 ,  H01J2237/3151 ,  H01J2237/31701 ,  H01L22/20

Abstract: An approach for providing uniformity control in an ion beam etch is described. In one embodiment, there is a method for providing uniform etching in an ion beam based etch process. In this embodiment, an ion beam is directed at a surface of a substrate. The surface of the substrate is etched with the ion beam. The etching is controlled to attain uniformity in the etch of the substrate. The control attains uniformity as a function of at least one ion beam based parameter selected from a plurality of ion beam based parameters.

Abstract translation: 描述了在离子束蚀刻中提供均匀性控制的方法。 在一个实施例中，存在在基于离子束的蚀刻工艺中提供均匀蚀刻的方法。 在本实施例中，离子束被引导到基板的表面。 用离子束蚀刻衬底的表面。 控制蚀刻以在衬底的蚀刻中获得均匀性。 控制获得作为从多个基于离子束的参数中选择的至少一个基于离子束的参数的函数的均匀性。

公开(公告)号：US20080314731A1

公开(公告)日：2008-12-25

申请号：US11767730

申请日：2007-06-25

Applicant: Steven R. Walther ,  Bon-Woong Koo ,  Bernard Gregory Lindsay

Inventor： Steven R. Walther ,  Bon-Woong Koo ,  Bernard Gregory Lindsay

IPC: H05F3/00 ,  B05C11/00

CPC classification number: H01J37/3299 ,  H01J37/32935

Abstract: Techniques for detecting wafer charging in a plasma processing system are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for detecting wafer charging in a plasma processing system. The apparatus may comprise a plasma chamber to produce a plasma discharge above a wafer in the plasma chamber. The apparatus may also comprise a biasing circuit to bias the wafer to draw ions from the plasma discharge towards the wafer. The apparatus may further comprise a detection mechanism to detect charge buildup on the wafer by measuring an electric field in one or more designated locations near a top surface of the wafer.

Abstract translation: 公开了一种在等离子体处理系统中检测晶片充电的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于在等离子体处理系统中检测晶片充电的装置。 该装置可以包括等离子体室，以在等离子体室中的晶片之上产生等离子体放电。 该装置还可以包括偏置电路，用于偏置晶片以从离子放电中向离子晶片提取离子。 该装置还可以包括检测机构，以通过测量在晶片顶表面附近的一个或多个指定位置的电场来检测晶片上的电荷积累。

公开(公告)号：US20080160212A1

公开(公告)日：2008-07-03

申请号：US11616314

申请日：2006-12-27

Applicant: Bon-Woong Koo ,  Steven R. Walther ,  Christopher J. Leavitt ,  Justin Tocco ,  Sung-Hwan Hyun ,  Timothy J. Miller ,  Jay T. Scheuer ,  Atul Gupta ,  Vikram Singh ,  Deven Raj

Inventor： Bon-Woong Koo ,  Steven R. Walther ,  Christopher J. Leavitt ,  Justin Tocco ,  Sung-Hwan Hyun ,  Timothy J. Miller ,  Jay T. Scheuer ,  Atul Gupta ,  Vikram Singh ,  Deven Raj

IPC: B28B7/38 ,  C23C16/00

CPC classification number: H01J37/32706 ,  H01J37/32623 ,  H01L21/67011 ,  H01L21/67069 ,  H01L21/68714 ,  H01L21/68735

Abstract: A method and apparatuses for providing improved electrical contact to a semiconductor wafer during plasma processing applications are disclosed. In one embodiment, an apparatus includes a wafer platen for supporting the wafer; and a plurality of electrical contact elements, each of the plurality of electrical contact elements are configured to provide a path for supplying a bias voltage from a bias power supply to the wafer on the wafer platen. The plurality of electrical contact elements are also geometrically arranged such that at least one electrical contact element contacts an inner surface region (e.g., region between a center of wafer and a distance approximately half of the radius of the wafer) and at least one electrical contact element contacts an outer annular surface region (e.g., region between an outer edge of wafer and a distance approximately half of the radius of the wafer).

Abstract translation: 公开了一种用于在等离子体处理应用期间提供与半导体晶片的改进的电接触的方法和装置。 在一个实施例中，一种装置包括用于支撑晶片的晶片台板; 以及多个电接触元件，所述多个电接触元件中的每一个被配置为提供用于将来自偏置电源的偏置电压提供给晶片台板上的晶片的路径。 多个电接触元件也被几何地布置成使得至少一个电接触元件接触内表面区域（例如，晶片的中心与晶片的半径的一半的距离）和至少一个电接触 元件接触外部环形表面区域（例如，晶片的外边缘之间的区域和晶片的半径的一半的距离）。

公开(公告)号：US07342240B2

公开(公告)日：2008-03-11

申请号：US11361765

申请日：2006-02-24

Applicant: Steven R. Walther ,  Morgan Evans

Inventor： Steven R. Walther ,  Morgan Evans

IPC: H01J37/317 ,  H01J37/304

CPC classification number: H01J37/026 ,  H01J2237/0044 ,  H01J2237/31703

Abstract: An ion beam monitoring system includes a charge neutralization system and a sensor. The charge neutralization system is configured to provide a compensating current to control a charge on a front surface of a wafer. The sensor is configured to sense the compensating current and provide a sensor signal in response to the compensating current, wherein the sensor signal is representative of a beam current of an ion beam. The charge neutralization system may include a plasma flood gun configured to provide the compensating current to the ion beam.

Abstract translation: 离子束监测系统包括电荷中和系统和传感器。 电荷中和系统被配置为提供补偿电流以控制晶片前表面上的电荷。 传感器被配置为感测补偿电流并且响应于补偿电流提供传感器信号，其中传感器信号代表离子束的束电流。 电荷中和系统可以包括配置成向离子束提供补偿电流的等离子体喷射枪。

公开(公告)号：USRE40008E1

公开(公告)日：2008-01-22

申请号：US10602795

申请日：2003-06-24

Applicant: Steven R. Walther

Inventor： Steven R. Walther

IPC: G21G5/10

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J2237/31703

Abstract: A method and apparatus for controlling implantation during vacuum fluctuations along a beam line. Vacuum fluctuations may be detected based on a detected beam current and/or may be compensated for without measuring pressure in an implantation chamber. A reference level for an ion beam current can determined and a difference between the reference value and the measured ion beam current can be used to control parameters of the ion implantation process, such as a wafer scan rate. The difference value can also be scaled to account for two types of charge exchanging collisions that result in a decrease in detected beam current. A first type of collision, a non-line of sight collision, causes a decrease in detected beam current, and also a decrease in the total dose delivered to a semiconductor wafer. A second type of collision, a line of sight collision, causes a decrease in detected beam current, but does not affect a total dose delivered to the wafer. Scaling of the difference can therefore be used to adjust a wafer scan rate that accounts for non-line of sight collisions.

Abstract translation: 一种用于在沿着光束线的真空波动期间控制植入的方法和装置。 可以基于检测到的束电流来检测真空波动和/或可以在不测量注入室中的压力的​​情况下补偿真空波动。 可以确定离子束电流的参考水平，并且可以使用参考值和测量离子束电流之间的差来控制离子注入过程的参数，例如晶片扫描速率。 差值也可以被缩放以考虑导致检测到的束电流减小的两种类型的电荷交换冲突。 第一类型的碰撞，非视线碰撞导致检测到的束电流降低，并且还导致递送到半导体晶片的总剂量的减小。 第二种类型的碰撞，视线碰撞导致检测到的束电流降低，但不影响传送给晶片的总剂量。 因此，差异的缩放可用于调整考虑非视线碰撞的晶片扫描速率。

公开(公告)号：US06521895B1

公开(公告)日：2003-02-18

申请号：US09425123

申请日：1999-10-22

Applicant: Steven R. Walther ,  Nicholas R. White

Inventor： Steven R. Walther ,  Nicholas R. White

IPC: G21K108

CPC classification number: H01J37/1474 ,  G21K1/087 ,  H01J37/15 ,  H01J37/3171 ,  H01J2237/30483

Abstract: Methods and apparatus are provided for scanning a charged particle beam. The apparatus includes scan elements and a scan signal generator for generating scan signals for scanning the charged particle beam in a scan pattern having a scan origin. In one embodiment, the apparatus includes a position controller for positioning the scan elements based on a parameter of the charged particle beam, such as energy. The scan elements may be positioned to achieve a fixed position of the scan origin for different beam energies. In another embodiment, the apparatus includes first and second sets of scan elements and a scan signal controller for controlling the scan signals supplied to the sets of scan elements based on a parameter of the charged particle beam, such as energy. The scan signal controller may control the ratio of the scan signals applied to the sets of scan elements, or may deenergize a set of scan elements, to minimize space charge forces on the charged particle beam that may reduce beam transmission through the apparatus.

Abstract translation: 提供了用于扫描带电粒子束的方法和装置。 该装置包括扫描元件和扫描信号发生器，用于产生用于以具有扫描原点的扫描图案扫描带电粒子束的扫描信号。 在一个实施例中，该装置包括位置控制器，用于基于带电粒子束（例如能量）的参数定位扫描元件。 扫描元件可以被定位成实现用于不同光束能量的扫描原点的固定位置。 在另一个实施例中，该装置包括第一组扫描元件和第二组扫描元件以及扫描信号控制器，用于基于诸如能量的带电粒子束的参数来控制提供给扫描元件组的扫描信号。 扫描信号控制器可以控制施加到该组扫描元件的扫描信号的比率，或者可以去除一组扫描元件，以最小化带电粒子束上的空间电荷力，以减少通过该装置的波束传输。

公开(公告)号：US06323497B1

公开(公告)日：2001-11-27

申请号：US09586492

申请日：2000-06-02

Applicant: Steven R. Walther

Inventor： Steven R. Walther

IPC: G21G510

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J2237/31703

Abstract: A method and apparatus for controlling implantation during vacuum fluctuations along a beam line. Vacuum fluctuations may be detected based on a detected beam current and/or may be compensated for without measuring pressure in an implantation chamber. A reference level for an ion beam current can determined and a difference between the reference value and the measured ion beam current can be used to control parameters of the ion implantation process, such as a wafer scan rate. The difference value can also be scaled to account for two types of charge exchanging collisions that result in a decrease in detected beam current. A first type of collision, a non-line of sight collision, causes a decrease in detected beam current, and also a decrease in the total dose delivered to a semiconductor wafer. A second type of collision, a line of sight collision, causes a decrease in detected beam current, but does not affect a total dose delivered to the wafer. Scaling of the difference can therefore be used to adjust a wafer scan rate that accounts for non-line of sight collisions.

Abstract translation: 一种用于在沿着光束线的真空波动期间控制植入的方法和装置。 可以基于检测到的束电流来检测真空波动和/或可以在不测量注入室中的压力的​​情况下补偿真空波动。 可以确定离子束电流的参考水平，并且可以使用参考值和测量的离子束电流之间的差来控制离子注入过程的参数，例如晶片扫描速率。 差值也可以被缩放以考虑导致检测到的束电流减小的两种类型的电荷交换冲突。 第一类型的碰撞，非视线碰撞导致检测到的束电流降低，并且还导致递送到半导体晶片的总剂量的减小。 第二种类型的碰撞，视线碰撞导致检测到的束电流降低，但不影响传送给晶片的总剂量。 因此，差异的缩放可用于调整考虑非视线碰撞的晶片扫描速率。

公开(公告)号：US08766523B2

公开(公告)日：2014-07-01

申请号：US13618682

申请日：2012-09-14

Applicant: Steven R. Walther ,  Gerald M. Friedman ,  Michael L. Bufano

Inventor： Steven R. Walther ,  Gerald M. Friedman ,  Michael L. Bufano

IPC: H01J33/04

CPC classification number: G21K5/00 ,  H01J5/18 ,  H01J33/04 ,  H01J2237/164 ,  Y10T156/10

Abstract: An exit window can include an exit window foil, and a support grid contacting and supporting the exit window foil. The support grid can have first and second grids, each having respective first and second grid portions that are positioned in an alignment and thermally isolated from each other. The first and second grid portions can each have a series of apertures that are aligned for allowing the passage of a beam therethrough to reach and pass through the exit window foil. The second grid portion can contact the exit window foil. The first grid portion can mask the second grid portion and the exit window foil from heat caused by the beam striking the first grid portion.

Abstract translation: 出口窗口可以包括出口窗口箔片和支撑出口窗口箔片的支撑格栅。 支撑格栅可以具有第一和第二格栅，每个栅格具有相互对准的第一和第二格栅部分，并且彼此热隔离。 第一和第二格栅部分可以各自具有一系列孔，其被对准以允许梁通过其到达并通过出射窗箔。 第二格栅部分可以接触出口窗箔。 第一格栅部分可以掩蔽第二格栅部分和出射窗箔，以防止由射束撞击第一格栅部分引起的热量。

公开(公告)号：US08222053B2

公开(公告)日：2012-07-17

申请号：US12603707

申请日：2009-10-22

Applicant: Paul Sullivan ,  Peter Nunan ,  Steven R. Walther

Inventor： Paul Sullivan ,  Peter Nunan ,  Steven R. Walther

IPC: H01L21/00 ,  H01L31/00

CPC classification number: H01L31/022425 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/0682 ,  Y02E10/547

Abstract: Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.

Abstract translation: 公开了用于制造太阳能电池的装置和方法。 在特定实施例中，太阳能电池可以通过在具有粒子源的室中设置太阳能电池来制造; 布置图案化组件，其包括孔和在所述颗粒源和所述太阳能电池之间的组件段; 以及将穿过所述孔的第一类型掺杂剂选择性地注入到所述太阳能电池的第一区域中，同时最小化将所述第一类型掺杂剂引入所述​​第一区域外的区域。

公开(公告)号：US20110207308A1

公开(公告)日：2011-08-25

申请号：US13099203

申请日：2011-05-02

Applicant: Jonathan G. ENGLAND ,  Steven R. Walther ,  Richard S. Muka ,  Julian Blake ,  Paul J. Murphy ,  Reuel B. Liebert

Inventor： Jonathan G. ENGLAND ,  Steven R. Walther ,  Richard S. Muka ,  Julian Blake ,  Paul J. Murphy ,  Reuel B. Liebert

IPC: H01L21/265 ,  H01L21/683

CPC classification number: H01L21/67213 ,  H01L21/26593 ,  H01L21/67098 ,  H01L21/67109 ,  H01L21/67248

Abstract: A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter; a cooling mechanism within the pre-chill station configured to cool a wafer from ambient temperature to a predetermined range less than ambient temperature; a loading assembly coupled to the pre-chill station and the end station; and a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to the predetermined temperature range before any ion implantation into the wafer, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

Abstract translation: 公开了一种用于低温离子注入的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。 设备可以包括位于离子注入机内的端站附近的预冷站; 所述预冷站内的冷却机构被配置为将晶片从环境温度冷却到小于环境温度的预定范围; 耦合到预冷站和终端站的加载组件; 以及与加载组件和冷却机构通信的控制器，用于将晶片加载到预冷站中，将晶片在任何离子注入晶片之前将晶片冷却至预定温度范围，并将冷却的晶片装载到端部 冷却晶片经历离子注入工艺的工位。