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公开(公告)号：US20090084757A1
公开(公告)日：2009-04-02
申请号：US11863886
申请日：2007-09-28
申请人： Yuri Erokhin , Steven R. Walther , Peter D. Nunan
发明人： Yuri Erokhin , Steven R. Walther , Peter D. Nunan
CPC分类号： H01J37/3053 , H01J2237/30455 , H01J2237/3151 , H01J2237/31701 , H01L22/20
摘要： An approach for providing uniformity control in an ion beam etch is described. In one embodiment, there is a method for providing uniform etching in an ion beam based etch process. In this embodiment, an ion beam is directed at a surface of a substrate. The surface of the substrate is etched with the ion beam. The etching is controlled to attain uniformity in the etch of the substrate. The control attains uniformity as a function of at least one ion beam based parameter selected from a plurality of ion beam based parameters.
摘要翻译： 描述了在离子束蚀刻中提供均匀性控制的方法。 在一个实施例中，存在在基于离子束的蚀刻工艺中提供均匀蚀刻的方法。 在本实施例中，离子束被引导到基板的表面。 用离子束蚀刻衬底的表面。 控制蚀刻以在衬底的蚀刻中获得均匀性。 控制获得作为从多个基于离子束的参数中选择的至少一个基于离子束的参数的函数的均匀性。
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公开(公告)号：US07820527B2
公开(公告)日：2010-10-26
申请号：US12119170
申请日：2008-05-12
申请人： Peter Nunan , Steven R. Walther , Yuri Erokhin , Paul J. Sullivan
发明人： Peter Nunan , Steven R. Walther , Yuri Erokhin , Paul J. Sullivan
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： An approach for providing a cleave initiation using a varying ion implant dose is described. In one embodiment, there is a method of forming a substrate. In this embodiment, a semiconductor material is provided and implanted with a spatially varying dose of one or more ion species. A handler substrate is attached to the implanted semiconductor material. A cleave of the implanted semiconductor material is initiated from the handler substrate at a preferential location that is a function of a dose gradient that develops from the spatially varying dose of one or more ion species implanted into the semiconductor material.
摘要翻译： 描述了使用变化的离子注入剂量提供切割引发的方法。 在一个实施例中，存在形成衬底的方法。 在该实施例中，提供半导体材料并且注入空间变化的一种或多种离子种类的剂量。 处理衬底附着到植入的半导体材料上。 植入的半导体材料的切割在优先位置从处理器基底开始，该优先位置是从植入半导体材料的一种或多种离子物质的空间变化剂量产生的剂量梯度的函数。
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公开(公告)号：US07939424B2
公开(公告)日：2011-05-10
申请号：US12212386
申请日：2008-09-17
申请人： Yuri Erokhin , Paul Sullivan , Steven R. Walther , Peter Nunan
发明人： Yuri Erokhin , Paul Sullivan , Steven R. Walther , Peter Nunan
CPC分类号： H01L21/76251 , H01J37/20 , H01J37/3171 , H01J2237/201 , H01J2237/202 , H01L21/26506 , H01L21/6835 , H01L2221/68359 , H01L2924/30105
摘要： A method for wafer bonding two substrates activated by ion implantation is disclosed. An in situ ion bonding chamber allows ion activation and bonding to occur within an existing process tool utilized in a manufacturing process line. Ion activation of at least one of the substrates is performed at low implant energies to ensure that the wafer material below the thin surface layers remains unaffected by the ion activation.
摘要翻译： 公开了一种通过离子注入激活的晶片接合两个基板的方法。 原位离子键合室允许离子激活和结合发生在制造工艺线中使用的现有工艺工具中。 在低注入能量下进行至少一个衬底的离子激活，以确保薄表面层下面的晶片材料不受离子激活的影响。
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公开(公告)号：US20090209084A1
公开(公告)日：2009-08-20
申请号：US12119170
申请日：2008-05-12
申请人： Peter Nunan , Steven R. Walther , Yuri Erokhin , Paul J. Sullivan
发明人： Peter Nunan , Steven R. Walther , Yuri Erokhin , Paul J. Sullivan
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： An approach for providing a cleave initiation using a varying ion implant dose is described. In one embodiment, there is a method of forming a substrate. In this embodiment, a semiconductor material is provided and implanted with a spatially varying dose of one or more ion species. A handler substrate is attached to the implanted semiconductor material. A cleave of the implanted semiconductor material is initiated from the handler substrate at a preferential location that is a function of a dose gradient that develops from the spatially varying dose of one or more ion species implanted into the semiconductor material
摘要翻译： 描述了使用变化的离子注入剂量提供切割引发的方法。 在一个实施例中，存在形成衬底的方法。 在该实施例中，提供半导体材料并且注入空间变化的一种或多种离子种类的剂量。 处理衬底附着到植入的半导体材料上。 植入的半导体材料的切割在优先位置从处理器基底开始，该优先位置是从注入到半导体材料中的一种或多种离子种类的空间变化剂量形成的剂量梯度的函数
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5.发明申请公开(公告)号：US20090181492A1
公开(公告)日：2009-07-16
申请号：US12013064
申请日：2008-01-11
申请人： Peter Nunan , Steven R. Walther , Yuri Erokhin
发明人： Peter Nunan , Steven R. Walther , Yuri Erokhin
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L21/02532 , H01L21/0262 , H01L21/76254 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： An approach for nano-cleaving a thin-film of silicon for solar cell fabrication is described. In one embodiment, there is a method of forming a substrate for use as a solar cell substrate. In this embodiment, a substrate of silicon is provided and implanted with an ion flux. A non-silicon substrate is attached to the thin-film of silicon to form a solar cell substrate.
摘要翻译： 描述了用于太阳能电池制造的用于纳米切割硅薄膜的方法。 在一个实施例中，存在形成用作太阳能电池基板的基板的方法。 在本实施例中，提供硅衬底并注入离子通量。 将非硅衬底附着到硅的薄膜上以形成太阳能电池衬底。
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6.发明授权公开(公告)号：US07820460B2
公开(公告)日：2010-10-26
申请号：US12205514
申请日：2008-09-05
申请人： Paul Sullivan , Peter Nunan , Steven R. Walther
发明人： Paul Sullivan , Peter Nunan , Steven R. Walther
CPC分类号： H01L31/022425 , H01L31/03529 , H01L31/068 , H01L31/0682 , Y02E10/547
摘要： Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.
摘要翻译： 公开了用于制造太阳能电池的装置和方法。 在特定实施例中，太阳能电池可以通过在具有粒子源的室中设置太阳能电池来制造; 布置图案化组件，其包括孔和在所述颗粒源和所述太阳能电池之间的组件段; 以及将穿过所述孔的第一类型掺杂剂选择性地注入到所述太阳能电池的第一区域中，同时最小化将所述第一类型掺杂剂引入所述第一区域外的区域。
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7.发明授权公开(公告)号：US07675730B2
公开(公告)日：2010-03-09
申请号：US11767730
申请日：2007-06-25
IPC分类号： H01L23/00
CPC分类号： H01J37/3299 , H01J37/32935
摘要： Techniques for detecting wafer charging in a plasma processing system are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for detecting wafer charging in a plasma processing system. The apparatus may comprise a plasma chamber to produce a plasma discharge above a wafer in the plasma chamber. The apparatus may also comprise a biasing circuit to bias the wafer to draw ions from the plasma discharge towards the wafer. The apparatus may further comprise a detection mechanism to detect charge buildup on the wafer by measuring an electric field in one or more designated locations near a top surface of the wafer.
摘要翻译： 公开了一种在等离子体处理系统中检测晶片充电的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于在等离子体处理系统中检测晶片充电的装置。 该装置可以包括等离子体室，以在等离子体室中的晶片之上产生等离子体放电。 该装置还可以包括偏置电路，用于偏置晶片以从离子放电中向离子晶片提取离子。 该装置还可以包括检测机构，以通过测量在晶片顶表面附近的一个或多个指定位置的电场来检测晶片上的电荷积累。
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8.发明申请公开(公告)号：US20100041176A1
公开(公告)日：2010-02-18
申请号：US12603707
申请日：2009-10-22
申请人： Paul SULLIVAN , Peter Nunan , Steven R. Walther
发明人： Paul SULLIVAN , Peter Nunan , Steven R. Walther
IPC分类号： H01L31/0232 , H01L31/02
CPC分类号： H01L31/022425 , H01L31/03529 , H01L31/068 , H01L31/0682 , Y02E10/547
摘要： Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.
摘要翻译： 公开了用于制造太阳能电池的装置和方法。 在特定实施例中，太阳能电池可以通过在具有粒子源的室中设置太阳能电池来制造; 布置图案化组件，其包括孔和在所述颗粒源和所述太阳能电池之间的组件段; 以及将穿过所述孔的第一类型掺杂剂选择性地注入到所述太阳能电池的第一区域中，同时最小化将所述第一类型掺杂剂引入所述第一区域外的区域。
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公开(公告)号：US07638781B2
公开(公告)日：2009-12-29
申请号：US11860333
申请日：2007-10-22
IPC分类号： A61N5/00
CPC分类号： H01J37/3299 , H01J37/32449 , H01J37/32935
摘要： A plasma processing system includes a process chamber, a source configured to generate a plasma in the process chamber, a platen configured to support a workpiece in the process chamber, and a pressure sensor positioned adjacent to the workpiece. The pressure sensor is configured to monitor a local pressure adjacent to the workpiece. A method includes generating a plasma in a process chamber, supporting a workpiece in the process chamber, and monitoring a local pressure adjacent to the workpiece with a pressure sensor positioned adjacent to the workpiece.
摘要翻译： 等离子体处理系统包括处理室，被配置为在处理室中产生等离子体的源，被配置为支撑处理室中的工件的压板和邻近工件定位的压力传感器。 压力传感器被配置为监测邻近工件的局部压力。 一种方法包括在处理室中产生等离子体，在处理室中支撑工件，并用邻近工件定位的压力传感器监测与工件相邻的局部压力。
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公开(公告)号：US20090101848A1
公开(公告)日：2009-04-23
申请号：US11860333
申请日：2007-10-22
IPC分类号： G21K5/00
CPC分类号： H01J37/3299 , H01J37/32449 , H01J37/32935
摘要： A plasma processing system includes a process chamber, a source configured to generate a plasma in the process chamber, a platen configured to support a workpiece in the process chamber, and a pressure sensor positioned adjacent to the workpiece. The pressure sensor is configured to monitor a local pressure adjacent to the workpiece. A method includes generating a plasma in a process chamber, supporting a workpiece in the process chamber, and monitoring a local pressure adjacent to the workpiece with a pressure sensor positioned adjacent to the workpiece.
摘要翻译： 等离子体处理系统包括处理室，被配置为在处理室中产生等离子体的源，被配置为支撑处理室中的工件的压板和邻近工件定位的压力传感器。 压力传感器被配置为监测邻近工件的局部压力。 一种方法包括在处理室中产生等离子体，在处理室中支撑工件，并用邻近工件定位的压力传感器监测与工件相邻的局部压力。
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