Abstract:
An ion beam apparatus includes a plasma chamber with a grid assembly installed at one end of the plasma chamber and a plasma sheath controller disposed between the plasma chamber and the grid assembly. The grid assembly includes first ion extraction apertures. The plasma sheath controller includes second ion extraction apertures smaller than the first ion extraction apertures. When the plasma sheath controller is used in this configuration, the surface of the plasma takes on a more planar configuration adjacent the controller so that ions, extracted from the plasma in a perpendicular direction to the plasma surface, pass cleanly through the apertures of the grid assembly rather than collide with the sidewalls of the grid assembly apertures. A semiconductor manufacturing apparatus and method for forming an ion beam are also provided.
Abstract:
A stacked semiconductor package including a number of solder ball pads formed on a lower surface of an interposing print circuit board, which is smaller than that of solder ball pads formed on an upper surface thereof, a pitch of the solder ball pads formed on the lower surface of the interposing print circuit board is greater than a pitch of the solder ball pads formed on the upper interposing print circuit board.
Abstract:
Example embodiments of the present invention provide a reflector for generating a neutral beam and a substrate processing apparatus including the same. The reflector may include at least one reflecting plate including a reflecting layer onto which an ion beam collides and a supporting layer. The reflecting layer may reflect and convert the ion beam into a neutral beam, and the supporting layer may reduce thermal deformation of the reflecting layer.
Abstract:
Example embodiments of the present invention provide a reflector for generating a neutral beam and a substrate processing apparatus including the same. The reflector may include at least one reflecting plate including a reflecting layer onto which an ion beam collides and a supporting layer. The reflecting layer may reflect and convert the ion beam into a neutral beam, and the supporting layer may reduce thermal deformation of the reflecting layer.