Ion beam apparatus having plasma sheath controller
    21.
    发明授权
    Ion beam apparatus having plasma sheath controller 失效
    具有等离子体鞘控制器的离子束装置

    公开(公告)号:US07564042B2

    公开(公告)日:2009-07-21

    申请号:US11834561

    申请日:2007-08-06

    Abstract: An ion beam apparatus includes a plasma chamber with a grid assembly installed at one end of the plasma chamber and a plasma sheath controller disposed between the plasma chamber and the grid assembly. The grid assembly includes first ion extraction apertures. The plasma sheath controller includes second ion extraction apertures smaller than the first ion extraction apertures. When the plasma sheath controller is used in this configuration, the surface of the plasma takes on a more planar configuration adjacent the controller so that ions, extracted from the plasma in a perpendicular direction to the plasma surface, pass cleanly through the apertures of the grid assembly rather than collide with the sidewalls of the grid assembly apertures. A semiconductor manufacturing apparatus and method for forming an ion beam are also provided.

    Abstract translation: 离子束装置包括等离子体室,其中安装在等离子体室的一端的栅格组件和设置在等离子体室和栅格组件之间的等离子体鞘控制器。 栅格组件包括第一离子提取孔。 等离子体鞘控制器包括比第一离子提取孔小的第二离子提取孔。 当在该构造中使用等离子体鞘控制器时,等离子体的表面具有与控制器相邻的更平面的配置,使得从垂直于等离子体表面的方向从等离子体提取的离子通过网格的孔 组件而不是与栅格组件孔的侧壁碰撞。 还提供了用于形成离子束的半导体制造装置和方法。

    Reflector for generating a neutral beam and substrate processing apparatus including the same
    23.
    发明授权
    Reflector for generating a neutral beam and substrate processing apparatus including the same 有权
    用于产生中性束的反射器和包括该反射器的基板处理装置

    公开(公告)号:US07446325B2

    公开(公告)日:2008-11-04

    申请号:US11341558

    申请日:2006-01-30

    CPC classification number: H01J37/32422 H05H3/02

    Abstract: Example embodiments of the present invention provide a reflector for generating a neutral beam and a substrate processing apparatus including the same. The reflector may include at least one reflecting plate including a reflecting layer onto which an ion beam collides and a supporting layer. The reflecting layer may reflect and convert the ion beam into a neutral beam, and the supporting layer may reduce thermal deformation of the reflecting layer.

    Abstract translation: 本发明的示例性实施例提供了一种用于产生中性光束的反射器和包括该反射体的基板处理设备。 反射器可以包括至少一个反射板,该反射板包括反射层,离子束在其上碰撞和支撑层。 反射层可以将离子束反射并转换成中性光束,并且支撑层可以减小反射层的热变形。

    Reflector for generating a neutral beam and substrate processing apparatus including the same
    24.
    发明申请
    Reflector for generating a neutral beam and substrate processing apparatus including the same 有权
    用于产生中性束的反射器和包括该反射器的基板处理装置

    公开(公告)号:US20060219887A1

    公开(公告)日:2006-10-05

    申请号:US11341558

    申请日:2006-01-30

    CPC classification number: H01J37/32422 H05H3/02

    Abstract: Example embodiments of the present invention provide a reflector for generating a neutral beam and a substrate processing apparatus including the same. The reflector may include at least one reflecting plate including a reflecting layer onto which an ion beam collides and a supporting layer. The reflecting layer may reflect and convert the ion beam into a neutral beam, and the supporting layer may reduce thermal deformation of the reflecting layer.

    Abstract translation: 本发明的示例性实施例提供了一种用于产生中性光束的反射器和包括该反射体的基板处理设备。 反射器可以包括至少一个反射板,该反射板包括反射层,离子束在其上碰撞和支撑层。 反射层可以将离子束反射并转换成中性光束,并且支撑层可以减小反射层的热变形。

Patent Agency Ranking