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    BioMEMS and planar light circuit with integrated package
    21.
    发明授权
    BioMEMS and planar light circuit with integrated package 有权
    BioMEMS和具有集成封装的平面光电路

    公开(公告)号：US09034678B2

    公开(公告)日：2015-05-19

    申请号：US14444586

    申请日：2014-07-28

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Allen Timothy Chang ,  Yi-Shao Liu ,  Ching-Ray Chen ,  Chun-Ren Cheng

    IPC: H01L21/00 ,  G01N21/64 ,  H01L23/02 ,  H01L23/00

    CPC classification number: G01N21/648 ,  G01N21/6454 ,  H01L23/02 ,  H01L24/80 ,  H01L2924/12042 ,  H01L2924/12043 ,  Y10T156/10 ,  H01L2924/00

    Abstract: A BioMEMS microelectromechanical apparatus and for fabricating the same is disclosed. A substrate is provided with at least one signal conduit formed on the substrate. A sacrificial layer of sacrificial material may be deposited on the signal conduit and optionally patterned to remove sacrificial material from outside the packaging covered area. A bonding layer may be deposited on at least a portion of the signal conduit and on the sacrificial layer when included. The bonding layer may be planarized and patterned to form one or more cap bonding pads and define a packaging covered area. A cap may be bonded on the cap bonding pad to define a capped area and so that the signal conduit extends from outside the capped area to inside the capped area. Additionally, a test material such as a fluid may be provided within the capped area.

    Abstract translation: 公开了一种BioMEMS微机电装置及其制造方法。 衬底上设置有形成在衬底上的至少一个信号导管。 牺牲材料的牺牲层可以沉积在信号导管上，并且可选地被图案化以从包装覆盖区域的外部去除牺牲材料。 当包括的时候，粘结层可沉积在信号导管的至少一部分上和牺牲层上。 结合层可以被平坦化和图案化以形成一个或多个帽接合焊盘并限定包装覆盖区域。 帽可以结合在盖接合垫上以限定封盖区域，并且使得信号导管从封盖区域的外部延伸到封盖区域的内部。 此外，可以在封盖区域内设置诸如流体的测试材料。

    Backside CMOS compatible bioFET with no plasma induced damage
    23.
    发明授权
    Backside CMOS compatible bioFET with no plasma induced damage 有权
    背面CMOS兼容的bioFET，没有等离子体引起的损坏

    公开(公告)号：US08728844B1

    公开(公告)日：2014-05-20

    申请号：US13706002

    申请日：2012-12-05

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Yi-Shao Liu ,  Chun-Ren Cheng ,  Ching-Ray Chen ,  Yi-Hsien Chang ,  Fei-Lung Lai ,  Chun-Wen Cheng

    IPC: H01L21/00

    CPC classification number: G01N27/4145 ,  G01N27/4148 ,  H01L21/31105 ,  H01L27/088 ,  H01L29/66477

    Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.

    Abstract translation: 本公开提供了生物场效应晶体管（BioFET）器件和制造BioFET和BioFET器件的方法。 该方法包括使用与互补金属氧化物半导体（CMOS）工艺兼容或典型的一个或多个工艺步骤形成BioFET。 BioFET器件包括设置在衬底的第一表面上的栅极结构和形成在衬底的第二表面上的界面层。 在形成界面层之前，从第二表面减薄衬底以暴露沟道区。

    Piezoelectric anti-stiction structure for microelectromechanical systems
    25.
    发明授权
    Piezoelectric anti-stiction structure for microelectromechanical systems 有权

    公开(公告)号：US12215016B2

    公开(公告)日：2025-02-04

    申请号：US18366151

    申请日：2023-08-07

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Fan Hu ,  Chun-Ren Cheng ,  Hsiang-Fu Chen ,  Wen-Chuan Tai

    IPC: B81B3/00 ,  B81C1/00

    Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. A first piezoelectric anti-stiction structure is disposed between the movable mass and the first dielectric structure, wherein the first piezoelectric anti-stiction structure includes a first piezoelectric structure and a first electrode disposed between the first piezoelectric structure and the first dielectric structure.

    Method of using integrated electro-microfluidic probe card
    30.
    发明授权
    Method of using integrated electro-microfluidic probe card 有权

    公开(公告)号：US10429341B2

    公开(公告)日：2019-10-01

    申请号：US15350399

    申请日：2016-11-14

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    Inventor： Yi-Shao Liu ,  Fei-Lung Lai ,  Chun-Ren Cheng ,  Chun-Wen Cheng

    IPC: G01N27/414 ,  G01N27/327 ,  G01N33/543 ,  B01L9/00 ,  B01L3/00 ,  G01N21/75

    Abstract: A method for testing a partially fabricated bio-sensor device wafer includes aligning the partially fabricated bio-sensor device wafer on a wafer stage of a wafer-level bio-sensor processing tool. The method further includes mounting an integrated electro-microfluidic probe card to a device area on the partially fabricated bio-sensor device wafer, wherein the electro-microfluidic probe card has a first major surface. The method further includes electrically connecting one or more electronic probe tips disposed on the first major surface of the integrated electro-microfluidic probe card to conductive areas of the device area. The method further includes flowing a test fluid from a fluid supply to the integrated electro-microfluidic probe card. The method further includes electrically measuring via the one or more electronic probe tips a first electrical property of one or more bio-FETs of the device area based on the test fluid flow.

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