公开(公告)号：US20190157342A1

公开(公告)日：2019-05-23

申请号：US16257410

申请日：2019-01-25

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Dok Won Lee ,  William David French ,  Keith Ryan Green

IPC: H01L27/22 ,  H01L43/04 ,  H01L43/14 ,  H01L43/06

CPC classification number: H01L27/22 ,  H01L43/04 ,  H01L43/065 ,  H01L43/14

Abstract: Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.

公开(公告)号：US20180130849A1

公开(公告)日：2018-05-10

申请号：US15865825

申请日：2018-01-09

Applicant: Texas Instruments Incorporated

Inventor： Dok Won Lee ,  William David French ,  Keith Ryan Green

IPC: H01L27/22 ,  H01L43/14 ,  H01L43/06 ,  H01L43/04

CPC classification number: H01L27/22 ,  H01L43/04 ,  H01L43/065 ,  H01L43/14

Abstract: Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.

公开(公告)号：US20180096784A1

公开(公告)日：2018-04-05

申请号：US15832884

申请日：2017-12-06

Applicant: Texas Instruments Incorporated

Inventor： Dok Won Lee ,  Sudtida Lavangkul ,  Erika Lynn Mazotti ,  William David French

IPC: H01F27/34 ,  G01R33/00 ,  H01F27/24 ,  H01L43/12 ,  H01L23/522 ,  H01L23/528 ,  G01R33/04 ,  H01F27/28

CPC classification number: H01F27/346 ,  G01R33/0029 ,  G01R33/04 ,  H01F27/24 ,  H01F27/28 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12

Abstract: An integrated fluxgate device, which includes a magnetic core, an excitation coil, and a sense coil. The magnetic core has a longitudinal edge and a terminal edge. The excitation coil coils around the longitudinal edge of the magnetic core, and the excitation coil has a first number of excitation coil members within a proximity of the terminal edge. The sense coil coils around the longitudinal edge of the magnetic core, and the sense coil has a second number of sense coil members within the proximity of the terminal edge. For reducing fluxgate noise, the second number of sense coil members may be less than the first number of excitation coil members within the proximity of the terminal edge.

公开(公告)号：US20170299661A1

公开(公告)日：2017-10-19

申请号：US15099561

申请日：2016-04-14

Applicant: Texas Instruments Incorporated

Inventor： Iouri N. Mirgorodski ,  Roozbeh Parsa ,  William French ,  Dok Won Lee ,  Ann Gabrys

IPC: G01R33/00 ,  H05K1/02 ,  H05K3/06

CPC classification number: G01R33/0005 ,  G01R33/0052 ,  H05K1/0296 ,  H05K1/0306 ,  H05K3/064 ,  H05K2201/083

Abstract: A magnetic sensor has a circuit segment with a quadrupole region. The quadrupole region includes a supply line, a first return line and a second return line, all in a conductor layer. The first supply line is laterally adjacent to the supply line on a first side, and the second return line is laterally adjacent to the supply line on a second, opposite side. A space between the supply line and the first return line is free of the conductor layer; similarly, a space between the supply line and the second return line is free of the conductor layer. The first return line and the second return line are electrically coupled to the supply line at a terminus of the circuit segment.

公开(公告)号：US20150340422A1

公开(公告)日：2015-11-26

申请号：US14286562

申请日：2014-05-23

Applicant: Texas Instruments Incorporated

Inventor： Dok Won Lee ,  William D. French ,  Andrei Papou

IPC: H01L49/02 ,  H01F27/28 ,  H01L25/10 ,  H01L23/522 ,  H01L23/00

CPC classification number: H01L28/10 ,  H01F17/0033 ,  H01F27/2804 ,  H01F2027/2809 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/5227 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/17 ,  H01L24/33 ,  H01L24/80 ,  H01L25/105 ,  H01L2224/0345 ,  H01L2224/03622 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/131 ,  H01L2224/1705 ,  H01L2224/30505 ,  H01L2224/80031 ,  H01L2224/80862 ,  H01L2225/1011 ,  H01L2924/01029 ,  H01L2924/06 ,  H01L2924/364 ,  H01L2924/00014 ,  H01L2924/014

Abstract: A method of manufacturing an inductor on a wafer level process that can operate at 20 MHz with good efficiency and a high inductance density is disclosed, wherein the inductor design allows high frequency operation, low RDSON values and high efficiency.

Abstract translation: 公开了一种在能够以20MHz以高效率和高电感密度工作的晶片级工艺上制造电感器的方法，其中电感器设计允许高频操作，低RDSON值和高效率。

公开(公告)号：US11885834B2

公开(公告)日：2024-01-30

申请号：US17463112

申请日：2021-08-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Lei Ding ,  Srinath Mathur Ramaswamy ,  Dok Won Lee ,  Baher Haroun ,  Wai Lee ,  Steven John Loveless

IPC: G01R15/20 ,  G01R19/10

CPC classification number: G01R15/202 ,  G01R19/10

Abstract: In a described example, a circuit includes a sensor circuit including multiple magnetic field sensors having respective sensor outputs. The magnetic field sensors are configured to provide magnetic field sensor signals at the respective sensor outputs representative of a measure of current flow through a conductive structure. A combiner interface has combiner inputs and a combiner output. The combiner inputs are coupled to the respective sensor outputs. The combiner interface is configured to provide an aggregate sensor measurement at the combiner output responsive to the magnetic field sensor signals, in which the aggregate sensor measurement is decoupled from magnetic fields generated responsive to the current flow through the conductive structure.

公开(公告)号：US20230135922A1

公开(公告)日：2023-05-04

申请号：US17514820

申请日：2021-10-29

Applicant: Texas Instruments Incorporated

Inventor： Rafael Jose Lizares Guevara ,  Dok Won Lee ,  Kashyap Mohan

IPC: H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  H01L43/14 ,  G01R33/00 ,  G01R33/07

Abstract: A described example includes: a semiconductor die including a Hall sensor arranged in a first plane that is parallel to a device side surface of the semiconductor die; a passivated magnetic concentrator including a magnetic alloy layer formed over the device side surface of the semiconductor die, the upper surface of the magnetic alloy layer covered by a layer of polymer material; a backside surface of the semiconductor die opposite the device side surface mounted to a die side surface of a die pad on a package substrate, the semiconductor die having bond pads on the device side surface spaced from the magnetic concentrator; electrical connections coupling the bond pads of the semiconductor die to leads of the package substrate; and mold compound covering the magnetic concentrator, the semiconductor die, the electrical connections, a portion of the leads, and the die side surface of the die pad.

公开(公告)号：US20190324097A1

公开(公告)日：2019-10-24

申请号：US16502317

申请日：2019-07-03

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Erika Lynn Mazotti ,  Dok Won Lee ,  William David French ,  Byron J.R. Shulver ,  Thomas Dyer Bonifield ,  Ricky Alan Jackson ,  Neil Gibson

IPC: G01R33/04 ,  G01R33/00

Abstract: An integrated fluxgate device has a magnetic core disposed over a semiconductor substrate. A first winding is disposed in a first metallization level above and a second metallization level below the magnetic core, and is configured to generate a first magnetic field in the magnetic core. A second winding is disposed in the first and second metallization levels and is configured to generate a second magnetic field in the magnetic core. A third winding is disposed in the first and second metallization levels and is configured to sense a magnetic field in the magnetic core that is the net of the first and second magnetic fields.

公开(公告)号：US20190178915A1

公开(公告)日：2019-06-13

申请号：US15836534

申请日：2017-12-08

Applicant: Texas Instruments Incorporated

Inventor： Dok Won Lee

IPC: G01R15/18 ,  G01R19/00

Abstract: A current-sensing system includes a conductor for carrying a first electrical current generating a first magnetic field. A device, spaced from the conductor by a clearance, includes a semiconductor integrated circuit die in a package. The semiconductor integrated circuit die includes at least one elongated bar of a first ferromagnetic material magnetized by the first magnetic field; a sensor comprising a first coil wrapped around the at least one elongated bar to sense the bar's magnetization; and an electronic driver creating a second electrical current flowing through a second coil wrapped around the at least one elongated bar generating a second magnetic field to compensate the at least one bar's magnetization. The package has a first outer surface free of device terminals. A discrete plate of a second ferromagnetic material is positioned in the clearance and is conformal with the first outer surface of the package.

公开(公告)号：US20180372511A1

公开(公告)日：2018-12-27

申请号：US15633516

申请日：2017-06-26

Applicant: Texas Instruments Incorporated

Inventor： Byron Jon Roderick Shulver ,  Dok Won Lee

IPC: G01D5/16 ,  G01R33/09

Abstract: An integrated AMR sensor includes a half bridge with two resistors, a Wheatstone bridge with four resistors, or a first Wheatstone bridge with four resistors in an orthogonal configuration, and a second Wheatstone bridge with four resistors in an orthogonal configuration, oriented at 45 degrees with respect to the first Wheatstone bridge. Each resistor includes first magnetoresistive segments with current flow directions oriented at a first tilt angle with respect to a reference direction of the resistor, and second magnetoresistive segments with current flow directions oriented at a second tilt angle with respect to the reference direction. The tilt angles are selected to advantageously cancel angular errors due to shape anisotropies of the magnetoresistive segments. In another implementation, the disclosed system/method include a method for identifying tilt angles which cancel angular errors due to shape anisotropies of the magnetoresistive segments.