Customizable Backup and Restore from NonVolatile Logic Array
    23.
    发明申请
    Customizable Backup and Restore from NonVolatile Logic Array 审中-公开
    非易失性逻辑阵列的可定制备份和还原

    公开(公告)号:US20160217840A1

    公开(公告)日:2016-07-28

    申请号:US15089607

    申请日:2016-04-04

    Abstract: Design and operation of a processing device is configurable to optimize wake-up time and peak power cost during restoration of a machine state from non-volatile storage. The processing device includes a plurality of non-volatile logic element arrays configured to store a machine state represented by a plurality of volatile storage elements of the processing device. A stored machine state is read out from the plurality of non-volatile logic element arrays to the plurality of volatile storage elements. During manufacturing, a number of rows and a number of bits per row in non-volatile logic element arrays are based on a target wake up time and a peak power cost. In another approach, writing data to or reading data of the plurality of non-volatile arrays can be done in parallel, sequentially, or in any combination to optimize operation characteristics.

    Abstract translation: 处理设备的设计和操作可配置为在非易失性存储器恢复机器状态期间优化唤醒时间和峰值功耗成本。 处理装置包括被配置为存储由处理装置的多个易失性存储元件表示的机器状态的多个非易失性逻辑元件阵列。 将存储的机器状态从多个非易失性逻辑元件阵列读出到多个易失性存储元件。 在制造期间,非易失性逻辑元件阵列中每行的数行和数位数是基于目标唤醒时间和峰值功率成本的。 在另一种方法中,可以并行,顺序地或以任何组合来对数据进行数据写入或读取数据,以优化操作特性。

    Signal level conversion in nonvolatile bitcell array
    24.
    发明授权
    Signal level conversion in nonvolatile bitcell array 有权
    非易失性位单元阵列中的信号电平转换

    公开(公告)号:US08854858B2

    公开(公告)日:2014-10-07

    申请号:US13753819

    申请日:2013-01-30

    Abstract: A system on chip (SoC) includes one or more core logic blocks that are configured to operate on a lower supply voltage and a memory array configured to operate on a higher supply voltage. Each bitcell in the memory has two ferroelectric capacitors connected in series between a first plate line and a second plate line to form a node Q. A data bit voltage is transferred to the node Q by activating a write driver to provide the data bit voltage responsive to the lower supply voltage. The data bit voltage is boosted on the node Q by activating a sense amp coupled to node Q of the selected bit cell, such that the sense amp senses the data bit voltage on the node Q and in response increases the data bit voltage on the node Q to the higher supply voltage.

    Abstract translation: 片上系统(SoC)包括配置为在较低电源电压下操作的一个或多个核心逻辑块和配置为在较高电源电压下工作的存储器阵列。 存储器中的每个位单元具有串联连接在第一板线和第二板线之间以形成节点Q的两个铁电电容器。通过激活写驱动器将数据位电压传送到节点Q以提供数据位电压响应 到较低的电源电压。 通过激活耦合到所选位单元的节点Q的读出放大器,在节点Q上升高数据位电压,使得感测放大器感测节点Q上的数据位电压,并且响应于增加节点上的数据位电压 Q到更高的电源电压。

    Two capacitor self-referencing nonvolatile bitcell
    25.
    发明授权
    Two capacitor self-referencing nonvolatile bitcell 有权
    两个电容器自参考非易失性位单元

    公开(公告)号:US08817520B2

    公开(公告)日:2014-08-26

    申请号:US13753814

    申请日:2013-01-30

    CPC classification number: G11C11/221

    Abstract: A system on chip (SoC) provides a memory array of self referencing nonvolatile bitcells. Each bit cell includes two ferroelectric capacitors connected in series between a first plate line and a second plate line, such that a node Q is formed between the two ferroelectric capacitors. The first plate line and the second plate line are configured to provide a voltage approximately equal to first voltage while the bit cell is not being accessed. A clamping circuit coupled to the node Q. A first read capacitor is coupled to the bit line via a transfer device controlled by a first control signal. A second read capacitor coupled to the bit line via another transfer device controlled by a second control signal. A sense amp is coupled between the first read capacitor and the second read capacitor.

    Abstract translation: 片上系统(SoC)提供了自参考非易失性位单元的存储器阵列。 每个位单元包括在第一板线和第二板线之间串联连接的两个铁电电容器,使得在两个铁电电容器之间形成节点Q。 第一板线和第二板线配置成在位单元未被访问时提供大致等于第一电压的电压。 耦合到节点Q的钳位电路。第一读取电容器经由由第一控制信号控制的传输装置耦合到位线。 通过由第二控制信号控制的另一转移装置耦合到位线的第二读电容器。 感测放大器耦合在第一读取电容器和第二读取电容器之间。

    Processing Device With Restricted Power Domain Wakeup Restore From Nonvolatile Logic Array
    26.
    发明申请
    Processing Device With Restricted Power Domain Wakeup Restore From Nonvolatile Logic Array 审中-公开
    具有限制功率域的处理器件从非易失性逻辑阵列恢复

    公开(公告)号:US20140075091A1

    公开(公告)日:2014-03-13

    申请号:US13770583

    申请日:2013-02-19

    Abstract: A processing device handles two or more operating threads. A non-volatile logic controller stores first program data from a first program in a first set of non-volatile logic element arrays and second program data from a second program in a second set of non-volatile logic element arrays. The first program and the second program can correspond to distinct executing threads, and the storage can be completed in response to receiving a stimulus regarding an interrupt for the computing device apparatus or in response to a power supply quality problem for the computing device apparatus. When the device needs to switch between processing threads, the non-volatile logic controller restores the first program data or the second program data from the non-volatile logic element arrays in response to receiving a stimulus regarding whether the first program or the second program is to be executed by the computing device apparatus.

    Abstract translation: 处理设备处理两个或多个操作线程。 非易失性逻辑控制器将第一程序中的第一程序数据存储在第一组非易失性逻辑单元阵列中的第一程序数据和来自第二组非易失性逻辑单元阵列中的第二程序的第二程序数据中。 第一程序和第二程序可以对应于不同的执行线程,并且响应于接收到关于计算设备装置的中断的刺激或响应于计算设备装置的电源质量问题,可以完成存储。 当设备需要在处理线程之间切换时,非易失性逻辑控制器响应于接收关于第一程序或第二程序是否为...的刺激而从非易失性逻辑单元阵列恢复第一程序数据或第二程序数据 由计算设备设备执行。

    Configuration Bit Sequencing Control of Nonvolatile Domain and Array Wakeup and Backup
    27.
    发明申请
    Configuration Bit Sequencing Control of Nonvolatile Domain and Array Wakeup and Backup 有权
    非易失性域和阵列唤醒和备份的配置位排序控制

    公开(公告)号:US20140075090A1

    公开(公告)日:2014-03-13

    申请号:US13770399

    申请日:2013-02-19

    Abstract: A processing device includes a plurality of non-volatile logic element array domains having two or more non-volatile logic element arrays to store 2006 a machine state of the processing device stored in a plurality of volatile store elements. Configuration bits are read to direct which non-volatile logic element array domains are enabled first and to direct an order in which the first enabled non-volatile logic element array domains are restored or backed up in response to entering a wakeup or backup mode. Configuration bits can be read to direct an order of and a parallelism of how individual non-volatile logic element arrays in a first enabled non-volatile logic element array domain are restored or backed up. The order of restoration or backing up can be controlled by instructions from non-volatile arrays of the first enabled of the plurality of non-volatile logic element array domains.

    Abstract translation: 处理装置包括具有两个或多个非易失性逻辑元件阵列的多个非易失性逻辑元件阵列域,以存储存储在多个易失性存储元件中的处理装置的机器状态。 读取配置位以指示首先启用哪些非易失性逻辑单元阵列域并且响应于进入唤醒或备份模式来引导第一启用的非易失性逻辑单元阵列域被还原或备份的顺序。 可以读取配置位以指导第一使能的非易失性逻辑单元阵列域中的各个非易失性逻辑单元阵列如何恢复或备份的顺序和并行性。 可以通过来自多个非易失性逻辑单元阵列域的第一使能的非易失性阵列的指令来控制恢复或备份的顺序。

    DIFFERENTIAL PLATE LINE SCREEN TEST FOR FERROELECTRIC LATCH CIRCUITS
    28.
    发明申请
    DIFFERENTIAL PLATE LINE SCREEN TEST FOR FERROELECTRIC LATCH CIRCUITS 有权
    用于电磁绞线电路的差分线路屏蔽测试

    公开(公告)号:US20130021833A1

    公开(公告)日:2013-01-24

    申请号:US13626531

    申请日:2012-09-25

    CPC classification number: G11C29/50 G11C11/22

    Abstract: Non-volatile latch circuits, such as in memory cells and flip-flops, that are constructed for reliability screening. The non-volatile latch circuits each include ferroelectric capacitors coupled to storage nodes, for example at the outputs of cross-coupled inverters. Separate plate lines are connected to the ferroelectric capacitors of the complementary storage nodes. A time-zero test of the latch stability margin is performed by setting a logic state at the storage nodes, then programming the state into the ferroelectric capacitors by polarization. After power-down, the plate lines are biased with a differential voltage relative to one another, and the latch is then powered up to attempt recall of the programmed state. The differential voltage disturbs the recall, and provides a measure of the cell margin and its later-life reliability.

    Abstract translation: 构建用于可靠性筛选的非易失性锁存电路,例如在存储器单元和触发器中。 非易失性锁存电路各自包括耦合到存储节点的铁电电容器,例如在交叉耦合的反相器的输出端。 单独的板线连接到互补存储节点的铁电电容器。 通过在存储节点设置逻辑状态,然后通过极化将状态编程到铁电电容器中来执行锁存稳定裕度的时间零测试。 掉电后,电路板以相对于彼此的差分电压偏置,然后锁存器上电以尝试调用编程状态。 差分电压会干扰召回,并提供信号余量的测量及其后期寿命的可靠性。

    Compute through power loss hardware approach for processing device having nonvolatile logic memory

    公开(公告)号:US11132050B2

    公开(公告)日:2021-09-28

    申请号:US16451260

    申请日:2019-06-25

    Abstract: A computing device apparatus facilitates use of a deep low power mode that includes powering off the device's CPU by including a hardware implemented process to trigger storage of data from the device's volatile storage elements in non-volatile memory in response to entering the low power mode. A hardware based power management unit controls the process including interrupting a normal processing order of the CPU and triggering the storage of the data in the non-volatile memory. In response to a wake-up event, the device is triggered to restore the data stored in the non-volatile memory to the volatile memory prior to execution of a wake up process for the CPU from the low power mode. The device includes a power storage element such as a capacitor that holds sufficient energy to complete the non-volatile data storage task prior to entering the low power mode.

    Processing device with nonvolatile logic array backup

    公开(公告)号:US10930328B2

    公开(公告)日:2021-02-23

    申请号:US16674525

    申请日:2019-11-05

    Abstract: A processing device is operated using a plurality of volatile storage elements. N groups of M volatile storage elements of the plurality of volatile storage elements per group are connected to an N by M size non-volatile logic element array of a plurality of non-volatile logic element arrays using a multiplexer. The multiplexer connects one of the N groups to the N by M size non-volatile logic element array to store data from the M volatile storage elements into a row of the N by M size non-volatile logic element array at one time or to write data to the M volatile storage elements from a row of the N by M size non-volatile logic element array at one time. A corresponding non-volatile logic controller controls the multiplexer operation with respect to the connections between volatile storage elements and non-volatile storage elements.

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