摘要:
A corrosive environmental crack length measuring apparatus including a double-cantilever beam type test piece having a tapered portion in a portion where the crack grows, a slit, and at least two holes, with the test piece being placed within a corrosive environment. Leads inserted in the holes of the test piece to be spot-welded thereto to supply a direct current to the holes. A current polarity switching device is provided with, a stabilized direct current power supply connected with the direct current supplying leads through the current polarity switching device. Potential difference measuring leads are inserted in holes formed in two outer faces of the double-cantilever beam type test piece parallel to a section of a crack growing portion at a plurality of points along the crack growing direction so as to be spot-welded thereto. A multiplexer is provided with, a micro-voltmeter connected with the potential difference measuring leads through the multiplexer, and an arithmetic unit judges crack length based on ratios between potential differences measured by switching the polarity of direct current using the current polarity switching device.
摘要:
A transverse flux machine includes a stator assembly consisting of a plurality of shaped cores, each having a base with a plurality of legs with a corresponding gap between each leg and each leg having a winding. A rotor assembly is positioned adjacent the stator assembly and includes a rotor disc, and a rotor ring with a plurality of rotor poles interleaved with a plurality of interpoles. The plurality of rotor poles and plurality of interpoles are radially disposed around the rotor disc. The plurality of rotor poles include a plurality of focused rotor poles interleaved with a plurality of diffused rotor poles.
摘要:
Provided is a method for easily producing a lamellar compressed fiber structural material which has mechanical characteristics close to those of in vivo bone and which is capable of easily increasing osteoblast even when a difference in strength exists. In order to solve the issues, the method for producing compressed fiber structural material 1, includes: a step of preparing biocompatible fiber 14 having an average diameter of 5 μm-50 μm and an aspect ratio of 20-500; and a step of molding compressed fiber structural material 1 by cold pressing/shearing biocompatible fiber 14, compressed fiber structural material 1 having an average pore diameter that is in the range of 60 μm-100 μm inclusive and a void fraction that is in the range of 25%-50% inclusive, both obtained by measurement in accordance with the mercury penetration method. Further, it is preferable for the cold pressing/shearing is performed by controlling a compressive pressure in the range of 200 MPa-2000 MPa, a shearing stroke length in the range of 0.2 mm-5 mm and a shearing velocity in the range of 0.5 mm/min-5 mm/min.
摘要翻译:本发明提供一种容易制造层状压缩纤维结构材料的方法,其具有接近体内骨的机械特性,并且即使存在强度差也能够容易地增加成骨细胞。 为了解决这些问题,制造压缩纤维结构材料1的方法包括:制备平均直径为5μm〜50μm,长径比为20-500的生物相容性纤维14的工序; 以及通过冷压/剪切生物相容性纤维14成型压缩纤维结构材料1的步骤,平均孔径在60μm-100μm范围内的压缩纤维结构材料1和在该范围内的空隙率 为25%-50%,均为根据汞渗透法测量得到的。 此外,优选通过将压缩压力控制在200MPa〜2000MPa,剪切行程长度在0.2mm-5mm范围内,剪切速度在0.5的范围内进行冷压/剪切 mm / min-5mm / min。
摘要:
A semiconductor device includes a second semiconductor package, which includes a substrate and at least one semiconductor package. The substrate includes a terminal group formed on a surface thereof. At least one first semiconductor package is stacked on the substrate, and includes a plurality of flexible substrates, each of which includes a wiring group on a surface thereof and each of which is bending-deformable. At least one first semiconductor package includes a plurality of semiconductor elements mounted on a plurality of flexible substrates. Electric conduction through the second semiconductor package is established by connecting the wiring group on each of a plurality of flexible substrates to the terminal group on the substrate. Further, at least one terminal of the terminal group on the substrate is electrically connected to all of the plurality of semiconductor elements on at least one first semiconductor package, and at least one other terminal of the terminal group is electrically connected only to particular semiconductor elements of the plurality of semiconductor elements.
摘要:
Provided is a method for easily producing a lamellar compressed fiber structural material which has mechanical characteristics close to those of in vivo bone and which is capable of easily increasing osteoblast even when a difference in strength exists. In order to solve the issues, the method for producing compressed fiber structural material 1, includes: a step of preparing biocompatible fiber 14 having an average diameter of 5 μm-50 μm and an aspect ratio of 20-500; and a step of molding compressed fiber structural material 1 by cold pressing/shearing biocompatible fiber 14, compressed fiber structural material 1 having an average pore diameter that is in the range of 60 μm-100 μm inclusive and a void fraction that is in the range of 25%-50% inclusive, both obtained by measurement in accordance with the mercury penetration method. Further, it is preferable for the cold pressing/shearing is performed by controlling a compressive pressure in the range of 200 MPa-2000 MPa, a shearing stroke length in the range of 0.2 mm-5 mm and a shearing velocity in the range of 0.5 mm/min-5 mm/min.
摘要翻译:本发明提供一种容易制造层状压缩纤维结构材料的方法,其具有接近体内骨的机械特性,并且即使存在强度差也能够容易地增加成骨细胞。 为了解决这些问题,制造压缩纤维结构材料1的方法包括:制备平均直径为5μm〜50μm,长径比为20-500的生物相容性纤维14的工序; 以及通过冷压/剪切生物相容性纤维14成型压缩纤维结构材料1的步骤,平均孔径在60μm-100μm范围内的压缩纤维结构材料1和在该范围内的空隙率 为25%-50%,均为根据汞渗透法测量得到的。 此外,优选通过将压缩压力控制在200MPa〜2000MPa,剪切行程长度在0.2mm-5mm范围内,剪切速度在0.5的范围内进行冷压/剪切 mm / min-5mm / min。
摘要:
In a crosshead, a pair of sheets (7) are formed by bisecting a parison (3) suspended from a resin flow passage (30) formed between a core (9) and a die (8) by causing a first dividing body (33) of a separator (5, 5a) provided on the core (9) or the die (8) to contact a second dividing body (40) provided on the core (9) or the die (8).
摘要:
In a frame (8) holding a sensor board (7) with a plurality of photoelectric conversion elements (6k) arranged and mounted and an imaging element (5) for focusing light reflected from an original onto the sensor board (7), the imaging element (5) includes a plurality of rod lens arrays (5) each having at least one cut end in a lengthwise direction, and cut portions of the rod lens arrays (5) are connected to each other to be tailored to a predetermined reading width, the frame (8) includes a holding section (13) for holding the rod lens arrays (5), and the holding section (13) includes a bottom surface (13B) widened at a part where a cut portion and/or a connection portion of the rod lens arrays (5) is located.
摘要:
In a frame (8) holding a sensor board (7) with a plurality of photoelectric conversion elements (6k) arranged and mounted and an imaging element (5) for focusing light reflected from an original onto the sensor board (7), the imaging element (5) includes a plurality of rod lens arrays (5) each having at least one cut end in a lengthwise direction, and cut portions of the rod lens arrays (5) are connected to each other to be tailored to a predetermined reading width, the frame (8) includes a holding section (13) for holding the rod lens arrays (5), and the holding section (13) includes a bottom surface (13B) widened at a part where a cut portion and/or a connection portion of the rod lens arrays (5) is located.
摘要:
Provided is a semiconductor device which includes a metal oxide semiconductor (MOS) transistor having high driving performance and high withstanding voltage with a thick gate oxide film. In the local oxidation-of-silicon (LOCOS) offset MOS transistor having high withstanding voltage, in order to prevent a gate oxide film (6) formed on a channel formation region (7) from being etched at a time of removing the gate oxide film (6) with a polycrystalline silicon gate electrode (8) being used as a mask to form a second conductivity type high concentration source region (4) and a second conductivity type high concentration drain region (5), a source field oxide film (14) is formed also on a source side of the channel formation region (7), and in addition, a length of a second conductivity type high concentration source field region (13) is optimized. Accordingly, it is possible to obtain a MOS transistor having high driving performance and high withstanding voltage with a thick gate oxide film.
摘要:
In a solidification sensor for measuring a solidification state of a liquid with a high degree of accuracy in real time, and for making the sensor small-sized with a reduced power consumption, the solidification sensor comprises a liquid absorbing portion formed of a liquid absorbable material, a substrate coupled to the liquid absorbing portion and a strain sensor for measuring strain exerted to the substrate due to a volumetric change upon solidification of a liquid absorbed in the liquid absorbing portion.