公开(公告)号：US06261862B1

公开(公告)日：2001-07-17

申请号：US09358930

申请日：1999-07-23

申请人： Tadashi Hori ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

发明人： Tadashi Hori ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

IPC分类号： H01L2100

CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A process is provided for producing a photovoltaic element which has at least one pin junction, and a buffering semiconductor layer constituted of plural sublayers between an n-type layer and an i-type layer and/or between an i-type layer and a p-type layer, through production steps of introducing a source material gas into an electric discharge space in a reaction chamber, and decomposing the source material gas by plasma discharge to form a non-monocrystalline semiconductor layer. In the process, in electric discharge generation for formation of at least one of the sublayers, the polarity of the electrode confronting the substrate for formation of a first sublayer and the polarity of the electrode confronting the substrate for formation of a second sublayer adjacent to the first sublayer is made different from each other, or the potential of one of the electrodes is set at zero volt. Thereby, diffusion of the dopant from the p-type layer or the n-type layer into the i-type layer is prevented effectively. The produced photovoltaic element is improved in the output properties, the open-circuit voltage, and the fill factor, and these properties deteriorate less.

摘要翻译： 提供了一种制造具有至少一个pin结的光电元件的工艺，以及在n型层和i型层之间和/或i型层与p型之间由多个子层构成的缓冲半导体层 型层，通过将源材料气体引入反应室中的放电空间的生产步骤，以及通过等离子体放电来分解原料气体以形成非单晶半导体层。 在该过程中，在用于形成至少一个子层的放电产生中，与用于形成第一子层的衬底相对的电极的极性和与衬底相对的用于形成邻近第二子层的第二子层的电极的极性 使第一子层彼此不同，或者将一个电极的电位设置为零伏。 由此，有效地防止了掺杂剂从p型层或n型层向i型层的扩散。 所产生的光电元件的输出性能，开路电压和填充因子得到改善，并且这些特性劣化较少。

公开(公告)号：US06858087B2

公开(公告)日：2005-02-22

申请号：US10320430

申请日：2002-12-17

申请人： Tadashi Hori ,  Masahiro Kanai ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

发明人： Tadashi Hori ,  Masahiro Kanai ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

IPC分类号： C23C16/509 ,  C23C16/54 ,  H01L21/00 ,  C23C16/00

CPC分类号： C23C16/4411 ,  C23C16/5096 ,  C23C16/545 ,  H01L21/67098

摘要： A vacuum-processing apparatus comprising a vacuum vessel, a processing chamber arranged in the vacuum vessel and a heater for heating a circumferential wall of the processing chamber, wherein a substrate is arranged in the processing chamber and the substrate is vacuum-processed in the processing chamber, characterized in that the vacuum-processing apparatus has a cooling plate located outside the processing chamber and arranged at a position to oppose the circumferential wall of the processing chamber for cooling the circumferential wall of the processing chamber, and a mechanism for moving the cooling plate so as to change a distance between the cooling plate and the circumferential wall of the processing chamber. A vacuum-processing method for performing a surface treatment for a substrate using the vacuum-processing apparatus.

摘要翻译： 一种真空处理装置，包括真空容器，布置在真空容器中的处理室和用于加热处理室的周壁的加热器，其中在处理室中布置基板，并且在处理中对基板进行真空处理 其特征在于，所述真空处理装置具有位于所述处理室外部的冷却板，并且配置在与所述处理室的周壁对置的位置，用于冷却所述处理室的周壁，以及用于使所述冷却 以便改变冷却板和处理室的周壁之间的距离。 一种使用真空处理装置对基板进行表面处理的真空处理方法。

公开(公告)号：US06576061B1

公开(公告)日：2003-06-10

申请号：US09469797

申请日：1999-12-22

申请人： Koichiro Moriyama ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Naoto Okada ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

发明人： Koichiro Moriyama ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Naoto Okada ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

IPC分类号： H01L2100

CPC分类号： H01L21/67173 ,  H01L21/67236 ,  H01L21/67253 ,  H01L21/6776

摘要： A substrate-processing method comprising transporting a substrate to pass through a plurality of processing spaces communicated with each other while processing said substrate in each processing space, characterized in that based on an inner pressure of (a) one of said plurality of processing spaces, said inner pressure of said processing space (a) and an inner pressure of (b) at least one of the processing spaces arranged before or after said processing space (a) are controlled. A substrate-processing apparatus comprising a plurality of processing spaces, a substrate transportation means for transporting a substrate to pass through said plurality of processing spaces while said substrate being processed in each processing space, and a pressure gage of measuring an inner pressure of (a) one of said plurality of processing spaces, characterized in that said substrate-processing apparatus has a control unit for controlling the inner pressure of said processing space (a) and that of (b) at least one of the processing spaces arranged before or after said processing space (a) based on information obtained from said pressure gage.

摘要翻译： 一种基板处理方法，包括在每个处理空间中处理所述基板的同时传送基板以通过彼此连通的多个处理空间，其特征在于，基于所述多个处理空间中的一个的内部压力， 所述处理空间（a）的所述内部压力和所述处理空间（a）之前或之后布置的处理空间中的至少一个处理空间（b）的内部压力被控制。1。一种基板处理设备，包括多个处理空间， 基板传送装置，用于在每个处理空间中处理所述基板的同时传送基板以通过所述多个处理空间;以及压力计，测量所述多个处理空间中的一个处理空间中的（a）的内部压力，其特征在于， 所述基板处理装置具有用于控制所述处理空间（a）和（b）的内部压力的控制单元 基于从所述压力计获得的信息，在所述处理空间（a）之前或之后布置的处理空间中的至少一个。

公开(公告)号：US06547922B2

公开(公告)日：2003-04-15

申请号：US09772987

申请日：2001-01-31

申请人： Tadashi Hori ,  Masahiro Kanai ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

发明人： Tadashi Hori ,  Masahiro Kanai ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

IPC分类号： H01L2100

CPC分类号： C23C16/4411 ,  C23C16/5096 ,  C23C16/545 ,  H01L21/67098

摘要： A vacuum-processing apparatus comprising a vacuum vessel, a processing chamber arranged in the vacuum vessel and a heater for heating a circumferential wall of the processing chamber, wherein a substrate is arranged in the processing chamber and the substrate is vacuum-processed in the processing chamber, characterized in that the vacuum-processing apparatus has a cooling plate arranged at a position to oppose the circumferential wall of the processing chamber for cooling the circumferential wall of the processing chamber, and a mechanism for moving the cooling plate so as to change a distance between the cooling plate and the circumferential wall of the processing chamber.

摘要翻译： 一种真空处理装置，包括真空容器，布置在真空容器中的处理室和用于加热处理室的周壁的加热器，其中在处理室中布置基板，并且在处理中对基板进行真空处理 其特征在于，所述真空处理装置具有布置在与所述处理室的周壁相对的位置以冷却所述处理室的周壁的位置的冷却板，以及用于使所述冷却板移动以改变所述处理室的机构 冷却板与处理室的周壁之间的距离。

公开(公告)号：US6159300A

公开(公告)日：2000-12-12

申请号：US990915

申请日：1997-12-15

申请人： Tadashi Hori ,  Shotaro Okabe ,  Akira Sakai ,  Yuzo Kohda ,  Takahiro Yajima

发明人： Tadashi Hori ,  Shotaro Okabe ,  Akira Sakai ,  Yuzo Kohda ,  Takahiro Yajima

IPC分类号： C23C14/56 ,  C23C16/54 ,  H01L21/205 ,  H01L31/075 ,  H01L31/20 ,  C23C16/00

CPC分类号： C23C16/545 ,  C23C14/562 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S438/907

摘要： An apparatus for forming a non-single-crystal semiconductor thin film comprising a film deposition chamber having a film-forming space surrounded by a film deposition chamber wall and a beltlike substrate, and an external chamber surrounding the deposition chamber wall is provided. While the beltlike substrate is moved in a longitudinal direction, a film-forming gas is introduced through a gas supply device into the film-forming space and microwave energy is radiated from a microwave applicator into the film-forming space to induce a microwave plasma, and thereby form a non-single-crystal semiconductor thin film on a surface of the beltlike substrate. A cooling mechanism and a temperature-increasing mechanism are provided to cover a part of an outside surface of the deposition chamber wall. An apparatus for forming a non-single-crystal semiconductor thin film where the gas supply device comprises a gas manifold set apart from the deposition chamber wall is another embodiment.

摘要翻译： 提供了一种用于形成非单晶半导体薄膜的装置，其包括具有由成膜室壁和带状基板包围的成膜空间的成膜室和围绕沉积室壁的外部室。 当带状基板沿长度方向移动时，成膜气体通过气体供给装置引入成膜空间，并且微波能量从微波施加器辐射到成膜空间中以诱导微波等离子体， 从而在带状基板的表面上形成非单晶半导体薄膜。 提供冷却机构和升温机构以覆盖沉积室壁的外表面的一部分。 形成非单晶半导体薄膜的装置是另一实施例，其中气体供应装置包括与沉积室壁分开的气体歧管。

公开(公告)号：US06399411B1

公开(公告)日：2002-06-04

申请号：US09594563

申请日：2000-06-15

申请人： Tadashi Hori ,  Shotaro Okabe ,  Akira Sakai ,  Yuzo Kohda ,  Takahiro Yajima

发明人： Tadashi Hori ,  Shotaro Okabe ,  Akira Sakai ,  Yuzo Kohda ,  Takahiro Yajima

IPC分类号： H01L2100

CPC分类号： C23C16/545 ,  C23C14/562 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S438/907

摘要： A method for forming a non-single-crystal semiconductor thin film and a photovoltaic device using an apparatus, which has a film deposition chamber with a film-forming space surrounded by a film deposition chamber wall and a belt-like substrate. An external chamber surrounding the deposition chamber wall is provided in the apparatus. While the belt-like substrate is moved in a longitudinal direction, a film-forming gas is introduced through a gas supply device into the film-forming space and microwave energy is radiated from a microwave applicator into the film-forming space to induce a microwave plasma, and thereby form a non-single-crystal semiconductor thin film on a surface of the belt-like substrate. A cooling mechanism and a temperature-increasing mechanism covering a part of an outside surface of the deposition chamber wall provide temperature control.

摘要翻译： 一种用于形成非单晶半导体薄膜的方法和使用具有由成膜室壁和带状衬底围成的成膜空间的成膜室的装置的光电器件。 在该装置中设置有围绕沉积室壁的外部室。 当带状基板沿纵向移动时，成膜气体通过气体供给装置引入成膜空间，并且微波能量从微波施加器辐射到成膜空间中以引起微波 等离子体，从而在带状基板的表面上形成非单晶半导体薄膜。 覆盖沉积室壁的外表面的一部分的冷却机构和升温机构提供温度控制。

公开(公告)号：US06833155B2

公开(公告)日：2004-12-21

申请号：US10425652

申请日：2003-04-30

申请人： Hiroshi Shimoda ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Koichiro Moriyama

发明人： Hiroshi Shimoda ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Koichiro Moriyama

IPC分类号： H05H100

CPC分类号： C23C16/545 ,  G21K5/10 ,  H01L31/03921 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A substrate-processing method includes at least (a) a step of delivering a web substrate and an interleaf from a substrate delivery bobbin provided in a substrate delivery chamber while the web substrate is transported into a substrate-processing chamber and the interleaf delivered is wound on an interleaf takeup bobbin, and (b) a step of subjecting the web substrate transported into the substrate-processing chamber to desired processing in the substrate-processing chamber. The web substrate processed in the substrate-processing chamber is transported outside the substrate-processing chamber, and transport abnormality of the interleaf in the substrate delivery chamber is detected by a transport abnormality-detecting mechanism.

摘要翻译： 基板处理方法至少包括以下步骤：将幅材基板输送到基板处理室中并且所传送的中间片被卷绕时，从设置在基板输送室中的基板输送线轴输送纸幅基板和插页的步骤 并且（b）使运送到基板处理室中的卷筒纸基板在基板处理室中进行所希望的处理的步骤。 在基板处理室中处理的网状基板被输送到基板处理室外部，并且通过运输异常检测机构来检测基板输送室内的交错异常。

公开(公告)号：US06447612B1

公开(公告)日：2002-09-10

申请号：US09625840

申请日：2000-07-26

申请人： Koichiro Moriyama ,  Masahiro Kanai ,  Yuzo Koda ,  Tadashi Hori

发明人： Koichiro Moriyama ,  Masahiro Kanai ,  Yuzo Koda ,  Tadashi Hori

IPC分类号： C23C1600

CPC分类号： C23C16/4409 ,  C23C16/545

摘要： A film-forming apparatus which has at least a vacuum vessel whose inside is capable of being vacuumed and a film-forming chamber having a discharge region provided in said vacuum vessel and in which a substrate web having a desired width and a desired length is arranged so as to constitute a part of said film-forming chamber, wherein said substrate web is continuously moved to pass through said discharge region of said film-forming chamber to continuously form a deposited film on said substrate web, characterized in that said film-forming chamber is provided with an opening-adjusting member such that said opening-adjusting member constitutes an entrance or/and an exit of said film-forming chamber, and a face of said opening-adjusting member which is opposed to said substrate web has one or more grooves formed substantially in parallel to a direction for said substrate web to be transported.

摘要翻译： 一种成膜装置，其至少具有能够被真空的内部的真空容器和具有设置在所述真空容器中的放电区域的成膜室，其中布置具有期望宽度和期望长度的基材网 以构成所述成膜室的一部分，其中所述基片网连续移动以通过所述成膜室的所述放电区域，以在所述基片网上连续形成沉积膜，其特征在于，所述成膜 腔室设置有开口调节构件，使得所述开口调节构件构成所述成膜室的入口或/和出口，并且与所述基材腹板相对的所述开口调节构件的表面具有一个或多个 更多的凹槽基本上平行于要输送的衬底腹板的方向形成。

公开(公告)号：US06602347B1

公开(公告)日：2003-08-05

申请号：US09439609

申请日：1999-11-12

申请人： Hiroshi Shimoda ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Koichiro Moriyama

发明人： Hiroshi Shimoda ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Koichiro Moriyama

IPC分类号： C23C1600

CPC分类号： C23C16/545 ,  G21K5/10 ,  H01L31/03921 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A substrate-processing apparatus includes a substrate delivery chamber, a substrate-processing chamber and a substrate takeup chamber, wherein in the substrate delivery chamber, a web substrate and an interleaf are delivered from a delivery bobbin including the web substrate and the interleaf alternately wound while the web substrate delivered is transported into the substrate-processing chamber to process the web substrate therein and the interleaf delivered is wound on an interleaf takeup bobbin. In the substrate takeup chamber, the web substrate transported from the substrate-processing chamber and an interleaf delivered from an interleaf delivery bobbin are alternately wound in a roll form on a substrate takeup bobbin. The substrate-processing apparatus is provided with a mechanism for detecting transport abnormality of the interleaf either in the substrate delivery chamber or in the substrate takeup chamber.

摘要翻译： 基板处理装置包括基板输送室，基板处理室和基板卷取室，其中，在基板输送室中，从基板和交错卷绕的输送线轴输送卷筒纸基板和夹板 而输送的网状基材被输送到基材处理室中以在其中处理网状物基材，并且输送的中间层被卷绕在中间卷取线轴上。 在基板卷取室中，从基板处理室输送的网状基板和从中间输送线轴输送的夹层交替地卷绕在基板卷绕筒管上。 衬底处理装置设置有用于检测衬底输送室或衬底收容室中的插入物的运输异常的机构。

公开(公告)号：US5575855A

公开(公告)日：1996-11-19

申请号：US433052

申请日：1995-05-03

申请人： Masahiro Kanai ,  Yasushi Fujioka ,  Takehito Yoshino ,  Tadashi Hori

发明人： Masahiro Kanai ,  Yasushi Fujioka ,  Takehito Yoshino ,  Tadashi Hori

IPC分类号： C23C16/50 ,  C23C16/455 ,  C23C16/511 ,  C23C16/54 ,  H01L21/205 ,  H01L31/04 ,  H01L31/075 ,  H01L31/20 ,  C23C16/00

CPC分类号： C23C16/455 ,  C23C16/511 ,  C23C16/545 ,  H01L31/075 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A deposited film forming method includes the steps of: continuously carrying a long substrate into or out of a vacuum chamber, flowing a first deposited film forming gas in a reverse direction parallel to the substrate and opposite to a conveying direction of the substrate from first gas discharging means into the vacuum chamber, exhausting the gas from first gas exhausting means, flowing a second deposited film forming gas in a forward direction parallel to the substrate and equivalent to the conveying direction of the substrate, exhausting the gas through the second gas exhausting means, and applying a discharge energy to the first and second gases.

摘要翻译： 沉积膜形成方法包括以下步骤：将长衬底连续地携带到真空室中或从真空室流出，使第一沉积膜形成气体沿平行于衬底的相反方向流动并与第一气体与衬底的输送方向相反 排出装置进入真空室，从第一气体排出装置排出气体，使平行于基板的向前方向流动第二沉积成膜气体并等效于基板的输送方向，排出气体通过第二排气装置 并且向第一和第二气体施加放电能量。