公开(公告)号：US20090114152A1

公开(公告)日：2009-05-07

申请号：US12039887

申请日：2008-02-29

申请人： Tooru ARAMAKI ,  Tadamitsu Kanekiyo

发明人： Tooru ARAMAKI ,  Tadamitsu Kanekiyo

IPC分类号： B05C11/00

CPC分类号： H01L21/67248 ,  C23C16/463 ,  C23C16/52 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109

摘要： An apparatus for treating with plasma a specimen mounted on a specimen table and a next specimen mounted thereon after the treatment of the specimen is completed in a vacuumed container, comprises, a detector for measuring a temperature of the specimen table, and an adjustor for adjusting the temperature of the specimen table obtained when the next specimen is treated to have a value determined from a predetermined change in temperature of the specimen and one of the temperature of the specimen table measured by the detector and a temperature of returning refrigerant obtained after the treatment of the specimen is started, wherein the adjustor obtains the predetermined change in temperature of the specimen from the temperatures of the specimen measured in respective conditions in each of which conditions the treatment is continued until a changing rate of the temperature of the specimen becomes not more than a predetermined degree.

摘要翻译： 用于处理样品的样品安装在样品台上的样品和在样品处理后安装的下一个样品的等离子体装置在真空容器中完成，包括：用于测量样品台的温度的检测器和用于调节的调节器 当将下一个样品处理成具有从试样的预定温度变化确定的值和由检测器测量的试样台的温度和处理后得到的返回制冷剂的温度时的样品台的温度 开始试样，其中调节器在每个条件下在各条件下测量的试样的温度从样品的温度获得预定的变化，直到处理持续直到样品的温度变化不再变化 比预定程度。

公开(公告)号：US20090078563A1

公开(公告)日：2009-03-26

申请号：US12267880

申请日：2008-11-10

申请人： Tooru Aramaki ,  Tsunehiko Tsubone ,  Tadamitsu Kanekiyo ,  Kenetsu Yokogawa

发明人： Tooru Aramaki ,  Tsunehiko Tsubone ,  Tadamitsu Kanekiyo ,  Kenetsu Yokogawa

IPC分类号： C23C14/28

CPC分类号： H01L21/67069 ,  H01J37/32091 ,  H01J37/32192 ,  H01J37/32935 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/67248

摘要： A plasma processing method includes mounting a workpiece to be processed on an upper surface of a sample table disposed at a lower portion of an interior of a processing chamber disposed within a vacuum vessel and processing the workpiece by use of plasma formed within the processing chamber while applying thereto a first high frequency power for adjustment of a surface potential of the workpiece which is disposed on the sample table. The method further includes starting, prior to application of the first high frequency power, to adjust a temperature of a heat exchange medium flowing in a passage disposed inside of the sample table so as to have a predetermined value based on information of this high frequency power.

摘要翻译： 等离子体处理方法包括将待处理的工件安装在设置在设置在真空容器内的处理室的内部的下部的样品台的上表面上，并且通过使用在处理室内形成的等离子体来处理工件，同时 向其施加用于调整设置在样品台上的工件的表面电位的第一高频电力。 该方法还包括在施加第一高频功率之前，开始在设置在样品台内部的通道中流动的热交换介质的温度，以便基于该高频功率的信息具有预定值 。

公开(公告)号：US20090020227A1

公开(公告)日：2009-01-22

申请号：US11892665

申请日：2007-08-24

申请人： Youji Andou ,  Ryoji Nishio ,  Katsushi Yagi ,  Tadamitsu Kanekiyo

发明人： Youji Andou ,  Ryoji Nishio ,  Katsushi Yagi ,  Tadamitsu Kanekiyo

IPC分类号： H01L21/3065

CPC分类号： H01L21/67109 ,  H01L21/67017

摘要： A vacuum processing apparatus includes a vacuum processing chamber, a high-vacuum exhaust pump for exhausting the vacuum processing chamber in vacuum, a low-vacuum exhaust pump connected to the downstream side of the high-vacuum exhaust pump, a lower electrode having mounted thereon a substrate to be processed, and a cooling gas supply unit for supplying the cooling gas between the substrate and the lower electrode. The cooling gas supply unit includes a cooling gas supply system and a cooling gas supply line. The cooling gas supply line is connected, through a first waste gas valve, to a waste gas line for exhausting the cooling gas. The waste gas line is connected just above the high-vacuum exhaust pump through a second waste gas valve, and to the exhaust gas line between the high-vacuum exhaust pump and the low-vacuum exhaust pump through a third waste gas valve.

摘要翻译： 真空处理装置包括真空处理室，用于真空排气真空处理室的高真空排气泵，连接到高真空排气泵下游侧的低真空排气泵，安装在其上的下电极 待处理的基板和用于在基板和下电极之间供给冷却气体的冷却气体供给单元。 冷却气体供给单元包括冷却气体供给系统和冷却气体供给管路。 冷却气体供给管线通过第一废气阀连接到用于排出冷却气体的废气管路。 废气管线通过第二废气阀正好连接在高真空排气泵上方，并通过第三废气阀与高真空排气泵和低真空排气泵之间的废气管路连接。

公开(公告)号：US6156663A

公开(公告)日：2000-12-05

申请号：US721732

申请日：1996-09-27

申请人： Katsuya Watanabe ,  Saburo Kanai ,  Ryoji Hamasaki ,  Tsuyoshi Yoshida ,  Yutaka Omoto ,  Masayuki Kojima ,  Syunji Sasabe ,  Tadamitsu Kanekiyo ,  Takazumi Ishizu

发明人： Katsuya Watanabe ,  Saburo Kanai ,  Ryoji Hamasaki ,  Tsuyoshi Yoshida ,  Yutaka Omoto ,  Masayuki Kojima ,  Syunji Sasabe ,  Tadamitsu Kanekiyo ,  Takazumi Ishizu

IPC分类号： H01J37/32 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01J37/32477 ,  C23F4/00 ,  H01J37/32192 ,  H01L21/32136

摘要： Provided is a method of processing a sample by generating plasma by an electromagnetic wave, wherein a material containing carbon, such as silicon carbide (Sic), is disposed in a vacuum container serving as a discharge region. The inside of an etching chamber is cleaned by O.sub.2 cleaning treatment by using a sheet type dry etching apparatus, and after an inner wall temperature of the etching chamber is set and controlled, a sample is conveyed into the etching chamber, and a TiN cap layer, an Al--Cu alloy layer and a TiN barrier layer are plasma-etched in order by using BCl.sub.3 /Cl.sub.2 /CH.sub.4 /Ar gases with the pattern of a resist film as a mask.

摘要翻译： 提供了一种通过电磁波产生等离子体来处理样品的方法，其中在用作放电区域的真空容器中设置含有碳的材料，例如碳化硅（Sic）。 通过使用片式干蚀刻装置通过O 2清洗处理来清洁蚀刻室的内部，并且在设置和控制蚀刻室的内壁温度之后，将样品输送到蚀刻室中，并且将TiN盖层 ，通过使用具有抗蚀剂膜的图案的BCl 3 / Cl 2 / CH 4 / Ar气体作为掩模，依次等离子体蚀刻Al-Cu合金层和TiN阻挡层。

公开(公告)号：US08801951B2

公开(公告)日：2014-08-12

申请号：US13210490

申请日：2011-08-16

申请人： Yoshiharu Inoue ,  Michikazu Morimoto ,  Tsuyoshi Matsumoto ,  Tetsuo Ono ,  Tadamitsu Kanekiyo ,  Mamoru Yakushiji ,  Masakazu Miyaji

发明人： Yoshiharu Inoue ,  Michikazu Morimoto ,  Tsuyoshi Matsumoto ,  Tetsuo Ono ,  Tadamitsu Kanekiyo ,  Mamoru Yakushiji ,  Masakazu Miyaji

IPC分类号： C03C15/00

CPC分类号： H01L21/31116

摘要： In a plasma processing method for conducting etching on an object to be processed by generating plasma from depositional gas introduced into a processing chamber and exposing the object to be processed to the plasma in a state in which radio frequency power is applied, the object to be processed is etched under etching conditions that a deposit film on an inner wall of the processing chamber becomes amorphous by repeating a first period during which the object to be processed is exposed to plasma and a second period during which the object to be processed is exposed to plasma and an etching rate is lower as compared with the first period. Consequently, particles due to increase in the number of processed sheets of the object to be processed can be suppressed.

摘要翻译： 在等离子体处理方法中，通过在施加射频电力的状态下，通过从引入到处理室中的沉积气体产生等离子体并将待处理物体暴露于等离子体，对待处理对象进行蚀刻， 在处理室的内壁上的沉积膜通过重复将被处理物暴露于等离子体的第一期间和第二期间，使被处理室的暴露于 等离子体和蚀刻速率比第一阶段低。 因此，能够抑制由于加工对象物的加工张数而增加的粒子。

公开(公告)号：US08057634B2

公开(公告)日：2011-11-15

申请号：US10902032

申请日：2004-07-30

申请人： Ryoji Nishio ,  Tadamitsu Kanekiyo ,  Yoshiyuki Oota ,  Tsuyoshi Matsumoto

发明人： Ryoji Nishio ,  Tadamitsu Kanekiyo ,  Yoshiyuki Oota ,  Tsuyoshi Matsumoto

IPC分类号： H01L21/205 ,  H01L21/302

CPC分类号： G06F17/5081 ,  G06F17/5086 ,  H01J37/32082 ,  H01J37/32642 ,  H01J37/32935 ,  H01L21/67069 ,  H01L21/6875

摘要： The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring.

摘要翻译： 本发明提供一种等离子体处理装置，其能够最小化晶片周边周围的电位分布的不均匀性，并且跨晶片表面提供均匀的工艺。 该装置配备有由电介质，导体或半导体形成的并且施加RF的聚焦环，其设计被优化用于基于澄清用于使晶片上的鞘等离子体界面平坦化的物理条件的设计技术进行处理 以及聚焦环上方的鞘 - 等离子体界面。 聚焦环的表面电压被确定为不低于用于防止由晶片加工引起的反应产物沉积在其上的最小电压。 聚焦环的表面高度，表面电压，材料和结构被优化，使得形成在聚焦环表面上的离子鞘的高度相等或具有在离子鞘高度适当的公差范围内的高度差 形成在晶片表面上。 通过考虑由聚焦环的消耗引起的变化，建立适当的公差范围来实现结构的优化。

公开(公告)号：US20110209828A1

公开(公告)日：2011-09-01

申请号：US13103666

申请日：2011-05-09

申请人： Ryoji NISHIO ,  Tadamitsu Kanekiyo ,  Yoshiyuki Oota ,  Tsuyoshi Matsumoto

发明人： Ryoji NISHIO ,  Tadamitsu Kanekiyo ,  Yoshiyuki Oota ,  Tsuyoshi Matsumoto

IPC分类号： H01L21/66 ,  C23F1/08

CPC分类号： G06F17/5081 ,  G06F17/5086 ,  H01J37/32082 ,  H01J37/32642 ,  H01J37/32935 ,  H01L21/67069 ,  H01L21/6875

摘要： The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring.

摘要翻译： 本发明提供一种等离子体处理装置，其能够最小化晶片周边周围的电位分布的不均匀性，并且跨晶片表面提供均匀的工艺。 该装置配备有由电介质，导体或半导体形成的并且施加RF的聚焦环，其设计被优化用于基于澄清用于使晶片上的鞘等离子体界面平坦化的物理条件的设计技术进行处理 以及聚焦环上方的鞘 - 等离子体界面。 聚焦环的表面电压被确定为不低于用于防止由晶片加工引起的反应产物沉积在其上的最小电压。 聚焦环的表面高度，表面电压，材料和结构被优化，使得形成在聚焦环表面上的离子鞘的高度相等或具有在离子鞘高度适当的公差范围内的高度差 形成在晶片表面上。 通过考虑由聚焦环的消耗引起的变化，建立适当的公差范围来实现结构的优化。

公开(公告)号：US20100297849A1

公开(公告)日：2010-11-25

申请号：US12512084

申请日：2009-07-30

申请人： Masatoshi Miyake ,  Nobuyuki Negishi ,  Masatoshi Oyama ,  Tadamitsu Kanekiyo ,  Masaru Izawa

发明人： Masatoshi Miyake ,  Nobuyuki Negishi ,  Masatoshi Oyama ,  Tadamitsu Kanekiyo ,  Masaru Izawa

IPC分类号： H01L21/3065

CPC分类号： H01L21/31116 ,  H01L21/31144

摘要： The invention provides a plasma etching method capable of suppressing bowing of an opening of the object to be etched, and solving the lack of opening at a high aspect ratio portion in deep hole processing having a high aspect ratio. A plasma etching method for etching an object to be etched in a plasma etching apparatus using a mask patterned and formed on the object to be etched comprises sequentially performing a first step for etching the mask while attaching deposits on a side wall of an opening close to a surface of the mask pattern of the mask using fluorocarbon gas CxFy (x=1, 2, 3, 4, 5, 6, y=4, 5, 6, 8), and a second step for etching the object to be etched while removing the deposits attached to the side wall of the opening close to the surface of the mask pattern of the mask using fluorocarbon gas.

摘要翻译： 本发明提供一种能够抑制待蚀刻物体的开口弯曲的等离子体蚀刻方法，并且解决了在具有高纵横比的深孔加工中在高纵横比部分缺少开口。 在等离子体蚀刻装置中使用图案化并形成在待蚀刻对象上的掩模来蚀刻待蚀刻物体的等离子体蚀刻方法包括：顺序地执行用于蚀刻掩模的第一步骤，同时将沉积物附着在靠近 使用碳氟化合物气体CxFy（x = 1,2,3,4,5,6，y = 4,5,6,8）的掩模的掩模图案的表面，以及蚀刻被蚀刻物体的第二步骤 同时使用碳氟化合物气体除去附着在开口的侧壁附近的沉积物的掩模图案的表面附近的沉积物。

公开(公告)号：US07662232B2

公开(公告)日：2010-02-16

申请号：US11730962

申请日：2007-04-05

申请人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa ,  Tadamitsu Kanekiyo

发明人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa ,  Tadamitsu Kanekiyo

IPC分类号： C23C16/00 ,  B65B1/04

CPC分类号： H01J37/32449 ,  C23C16/455 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/3065 ,  Y10T137/0402

摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

摘要翻译： 本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。 等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中通过不同的气体入口将具有不同组成比的O 2或N 2的至少两种处理气体引入处理室，以便控制临界尺寸的面内均匀性 同时保持工艺深度的面内均匀性。

公开(公告)号：US07658815B2

公开(公告)日：2010-02-09

申请号：US12105018

申请日：2008-04-17

申请人： Kenji Maeda ,  Kenetsu Yokogawa ,  Tadamitsu Kanekiyo

发明人： Kenji Maeda ,  Kenetsu Yokogawa ,  Tadamitsu Kanekiyo

IPC分类号： C23F1/02 ,  C23C16/513

CPC分类号： H01J37/32935 ,  H01J37/32082 ,  H01J2237/3341

摘要： An antenna electrode having a substantially circular shape, is arranged on a plane of a processing vessel, which is located opposite to a stage for mounting a sample within the processing vessel, and positioned parallel to the stage. An emission monitor monitors emission intensity of plasma present in at least 3 different points along a radial direction of the antenna electrode. A control unit adjusts an energizing current supplied to an external coil for forming a magnetic field within the processing vessel. The control unit adjusts the energizing current supplied to the external coil based upon the monitoring result obtained from the emission monitor so as to control the emission intensity of the plasma to become uniform emission intensity.

摘要翻译： 具有大致圆形形状的天线电极被布置在处理容器的平面上，该处理容器的平面位于与用于将样品安装在处理容器内并平行于平台的台的相对的位置。 发射监视器监视沿着天线电极的径向至少3个不同点存在的等离子体的发射强度。 控制单元调节提供给外部线圈的激励电流，以在处理容器内形成磁场。 控制单元基于从发射监视器获得的监视结果来调节供给外部线圈的通电电流，以控制等离子体的发射强度变为均匀的发射强度。