STRUCTURE AND FORMATION METHOD OF FIN-LIKE FIELD EFFECT TRANSISTOR
    21.
    发明申请
    STRUCTURE AND FORMATION METHOD OF FIN-LIKE FIELD EFFECT TRANSISTOR 有权
    晶体场效应晶体的结构和形成方法

    公开(公告)号:US20150364593A1

    公开(公告)日:2015-12-17

    申请号:US14483617

    申请日:2014-09-11

    Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.

    Abstract translation: 提供了半导体器件的结构和形成方法。 半导体器件包括在半导体衬底上的半导体衬底和鳍状结构。 半导体器件还包括覆盖翅片结构的一部分的栅极堆叠以及在鳍结构上并且邻近栅堆叠的外延生长的源极/漏极结构。 半导体器件还包括在外延生长的源极/漏极结构上的半导体保护层。 半导体保护层的硅的原子浓度大于外延生长的源极/漏极结构的原子浓度。

    IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF
    24.
    发明申请
    IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF 有权
    图像传感器及其制造方法

    公开(公告)号:US20150130002A1

    公开(公告)日:2015-05-14

    申请号:US14080611

    申请日:2013-11-14

    Abstract: An image sensor is provided including a substrate, an array of photosensitive units, a grid, a light-tight layer and a plurality of color filters. In the image sensor, the grid has a top surface, and the light-tight layer is disposed on the top surface of the grid. Due to the light-tight layer on the grid, an incident light entering into the grid can be blocked by the light-tight layer, so that the crosstalk effect is reduced significantly. Further, a method for manufacturing the image sensor also provides herein.

    Abstract translation: 提供一种图像传感器,包括基板,感光单元阵列,格栅,不透光层和多个滤色器。 在图像传感器中,栅格具有顶表面,并且不透光层设置在栅格的顶表面上。 由于栅格上的不透光层,入射到电网中的入射光可被遮光层阻挡,使得串扰效应显着降低。 此外,本文还提供了一种用于制造图像传感器的方法。

    IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF
    25.
    发明申请
    IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF 有权
    图像传感器及其制造方法

    公开(公告)号:US20150130001A1

    公开(公告)日:2015-05-14

    申请号:US14080555

    申请日:2013-11-14

    Abstract: An image sensor is provided including a substrate, an array of photosensitive units, a grid and a plurality of color filters. In the image sensor, the grid has a first portion and a second portion disposed on the first portion. The second portion of the grid can cause reflection or refraction of incident lights targeted for one image sensor element back into the same image sensor element, so as to avoid crosstalk occurred. Further, a method for manufacturing the image sensor also provides herein.

    Abstract translation: 提供一种图像传感器,包括基板,感光单元阵列,格栅和多个滤色器。 在图像传感器中,格栅具有设置在第一部分上的第一部分和第二部分。 网格的第二部分可以使针对一个图像传感器元件的入射光的反射或折射返回到相同的图像传感器元件中,以避免串扰发生。 此外,本文还提供了一种用于制造图像传感器的方法。

Patent Agency Ranking