公开(公告)号：US20150364593A1

公开(公告)日：2015-12-17

申请号：US14483617

申请日：2014-09-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shiu-Ko JANGJIAN ,  Tzu-Kai LIN ,  Chi-Cherng JENG

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/66

CPC classification number: H01L21/823821 ,  H01L21/02532 ,  H01L21/324 ,  H01L21/823814 ,  H01L27/0924 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.

Abstract translation: 提供了半导体器件的结构和形成方法。 半导体器件包括在半导体衬底上的半导体衬底和鳍状结构。 半导体器件还包括覆盖翅片结构的一部分的栅极堆叠以及在鳍结构上并且邻近栅堆叠的外延生长的源极/漏极结构。 半导体器件还包括在外延生长的源极/漏极结构上的半导体保护层。 半导体保护层的硅的原子浓度大于外延生长的源极/漏极结构的原子浓度。

公开(公告)号：US20150364579A1

公开(公告)日：2015-12-17

申请号：US14483900

申请日：2014-09-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Shiu-Ko JANGJIAN ,  Tzu-Kai LIN ,  Chi-Cherng JENG

IPC: H01L29/66 ,  H01L27/088 ,  H01L29/78

CPC classification number: H01L21/823814 ,  H01L21/02532 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of carbon greater than that of the epitaxially grown source/drain structure.

Abstract translation: 提供了半导体器件的结构和形成方法。 半导体器件包括在半导体衬底上的半导体衬底和鳍状结构。 半导体器件还包括覆盖翅片结构的一部分的栅极堆叠以及在鳍结构上并且邻近栅堆叠的外延生长的源极/漏极结构。 半导体器件还包括在外延生长的源极/漏极结构上的半导体保护层。 半导体保护层的碳原子浓度大于外延生长的源极/漏极结构的碳原子浓度。

公开(公告)号：US20150243805A1

公开(公告)日：2015-08-27

申请号：US14192258

申请日：2014-02-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume CHIEN ,  Yun-Wei CHENG ,  Zhe-Ju LIU ,  Kuo-Cheng LEE ,  Chi-Cherng JENG ,  Chuan-Pu LIU

IPC: H01L31/0232 ,  H01L31/101 ,  H01L31/0216

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463

Abstract: Embodiments of the disclosure provide an image sensor device. The image sensor device includes a semiconductor substrate including a front surface, a back surface opposite to the front surface, a light-sensing region close to the front surface, and a trench adjacent to the light-sensing region. The image sensor device includes a light-blocking structure positioned in the trench to absorb or reflect incident light.

Abstract translation: 本公开的实施例提供了一种图像传感器装置。 图像传感器装置包括：半导体衬底，包括前表面，与前表面相对的后表面，靠近前表面的感光区域和与光感测区域相邻的沟槽。 图像传感器装置包括位于沟槽中以吸收或反射入射光的遮光结构。

公开(公告)号：US20150130002A1

公开(公告)日：2015-05-14

申请号：US14080611

申请日：2013-11-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Zhe-Ju LIU ,  Kuo-Cheng LEE ,  Chi-Cherng JENG ,  Chun-Hao CHOU ,  Yin-Chieh HUANG ,  Wan-Chen HUANG

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685

Abstract: An image sensor is provided including a substrate, an array of photosensitive units, a grid, a light-tight layer and a plurality of color filters. In the image sensor, the grid has a top surface, and the light-tight layer is disposed on the top surface of the grid. Due to the light-tight layer on the grid, an incident light entering into the grid can be blocked by the light-tight layer, so that the crosstalk effect is reduced significantly. Further, a method for manufacturing the image sensor also provides herein.

Abstract translation: 提供一种图像传感器，包括基板，感光单元阵列，格栅，不透光层和多个滤色器。 在图像传感器中，栅格具有顶表面，并且不透光层设置在栅格的顶表面上。 由于栅格上的不透光层，入射到电网中的入射光可被遮光层阻挡，使得串扰效应显着降低。 此外，本文还提供了一种用于制造图像传感器的方法。

公开(公告)号：US20150130001A1

公开(公告)日：2015-05-14

申请号：US14080555

申请日：2013-11-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Yin-Chieh HUANG ,  Wan-Chen Huang ,  Zhe-Ju LIU ,  Kuo-Cheng LEE ,  Chi-Cherng JENG

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685

Abstract: An image sensor is provided including a substrate, an array of photosensitive units, a grid and a plurality of color filters. In the image sensor, the grid has a first portion and a second portion disposed on the first portion. The second portion of the grid can cause reflection or refraction of incident lights targeted for one image sensor element back into the same image sensor element, so as to avoid crosstalk occurred. Further, a method for manufacturing the image sensor also provides herein.

Abstract translation: 提供一种图像传感器，包括基板，感光单元阵列，格栅和多个滤色器。 在图像传感器中，格栅具有设置在第一部分上的第一部分和第二部分。 网格的第二部分可以使针对一个图像传感器元件的入射光的反射或折射返回到相同的图像传感器元件中，以避免串扰发生。 此外，本文还提供了一种用于制造图像传感器的方法。

公开(公告)号：US20240363439A1

公开(公告)日：2024-10-31

申请号：US18770861

申请日：2024-07-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiu-Ko JANGJIAN ,  Tzu-Kai LIN ,  Chi-Cherng JENG

IPC: H01L21/8238 ,  H01L21/02 ,  H01L21/324 ,  H01L27/092 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/823821 ,  H01L21/02532 ,  H01L21/324 ,  H01L21/823814 ,  H01L27/0924 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.

公开(公告)号：US20190252429A1

公开(公告)日：2019-08-15

申请号：US16398133

申请日：2019-04-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume CHIEN ,  Yun-Wei CHENG ,  Zhe-Ju LIU ,  Kuo-Cheng LEE ,  Chi-Cherng JENG ,  Chuan-Pu LIU

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate including a front surface, a back surface opposite to the front surface, and a light-sensing region extending from the front surface into the semiconductor substrate. The image sensor device includes a light-blocking structure in the semiconductor substrate and surrounding the light-sensing region. The light-blocking structure includes a conductive light reflection structure and a light absorption structure, and the light absorption structure is between the conductive light reflection structure and the back surface. The image sensor device includes an insulating layer between the light-blocking structure and the semiconductor substrate.

公开(公告)号：US20170345923A1

公开(公告)日：2017-11-30

申请号：US15367054

申请日：2016-12-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hung-Pin CHEN ,  Chi-Cherng JENG ,  Ru-Shang HSIAO ,  Li-Yi CHEN

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/36 ,  H01L21/265 ,  H01L29/16 ,  H01L21/306 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/785 ,  H01L21/26506 ,  H01L21/30604 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/16 ,  H01L29/36 ,  H01L29/41791 ,  H01L29/42356 ,  H01L29/66795 ,  H01L29/775 ,  H01L2029/7857

Abstract: A semiconductor device is provided and includes a semiconductor fin protruding from a semiconductor substrate. The semiconductor fin includes plural pairs of semiconductor layers on the semiconductor substrate, each pair of semiconductor layers consists of a first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type. The second semiconductor layer is stacked on and contacts the first semiconductor layer.

公开(公告)号：US20170207316A1

公开(公告)日：2017-07-20

申请号：US15074991

申请日：2016-03-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chi-Cheng HUNG ,  Yu-Sheng WANG ,  Weng-Cheng CHEN ,  Hao-Han WEI ,  Ming-Ching CHUNG ,  Chi-Cherng JENG

IPC: H01L29/51 ,  H01L21/285 ,  H01L29/78 ,  H01L29/40

CPC classification number: H01L29/517 ,  H01L21/28088 ,  H01L21/28512 ,  H01L21/823842 ,  H01L29/401 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/78

Abstract: A method of fabricating tantalum nitride barrier layer in an ultra low threshold voltage semiconductor device is provided. The method includes forming a high-k dielectric layer over a semiconductor substrate. Subsequently, a tantalum nitride barrier layer is formed on the high-k dielectric layer. The tantalum nitride barrier layer has a Ta:N ratio between 1.2 and 3. Next, a plurality of first metal gates is formed on the tantalum nitride barrier layer. The first metal gates are patterned, and then a second metal gate is formed on the tantalum nitride barrier layer.

公开(公告)号：US20170125298A1

公开(公告)日：2017-05-04

申请号：US15382478

申请日：2016-12-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shiu-Ko JANGJIAN ,  Ren-Hau YU ,  Chi-Cherng JENG

IPC: H01L21/8234 ,  H01L29/49 ,  H01L21/285 ,  H01L27/092

CPC classification number: H01L21/82345 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823842 ,  H01L27/0924 ,  H01L29/4966 ,  H01L29/785

Abstract: A semiconductor device includes a n-type gate structure over a first semiconductor fin, in which the n-type gate structure is fluorine incorporated and includes a n-type work function metal layer overlying the first high-k dielectric layer. The n-type work function metal layer includes a TiAl (titanium aluminum) alloy, in which an atom ratio of Ti (titanium) to Al (aluminum) is in a range substantially from 1 to 3. The semiconductor device further includes a p-type gate structure over a second semiconductor fin, in which the p-type gate structure is fluorine incorporated includes a p-type work function metal layer overlying the second high-k dielectric layer. The p-type work function metal layer includes titanium nitride (TiN), in which an atom ratio of Ti to N (nitrogen) is in a range substantially from 1:0.9 to 1:1.1.