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公开(公告)号：US09618856B2
公开(公告)日：2017-04-11
申请号：US15191831
申请日：2016-06-24
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chia-Ching Huang , Chia-Hao Hsu , Chia-Chen Chen
CPC classification number: G03F7/70708 , C23C16/042 , C23C16/34 , C23C16/56 , G03F7/70633 , G03F7/70783 , H01L21/6833 , Y10T29/49155
Abstract: The present disclosure relates to a deformable reticle chuck. In some embodiments, an extreme ultraviolet (EUV) deformable reticle chuck has a substrate of insulating material with a plurality of protrusions extending outward from a first side of the substrate. A resistive material is arranged along a second side of the substrate below the plurality of protrusions. The resistive material is configured to expand in response to an applied current or voltage to adjust a shape of a reticle.
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公开(公告)号：US20160306285A1
公开(公告)日：2016-10-20
申请号：US15191831
申请日：2016-06-24
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chia-Ching Huang , Chia-Hao Hsu , Chia-Chen Chen
IPC: G03F7/20 , C23C16/56 , C23C16/04 , H01L21/683 , C23C16/34
CPC classification number: G03F7/70708 , C23C16/042 , C23C16/34 , C23C16/56 , G03F7/70633 , G03F7/70783 , H01L21/6833 , Y10T29/49155
Abstract: The present disclosure relates to a deformable reticle chuck. In some embodiments, an extreme ultraviolet (EUV) deformable reticle chuck has a substrate of insulating material with a plurality of protrusions extending outward from a first side of the substrate. A resistive material is arranged along a second side of the substrate below the plurality of protrusions. The resistive material is configured to expand in response to an applied current or voltage to adjust a shape of a reticle.
Abstract translation: 本公开涉及可变形的光罩卡盘。 在一些实施例中，极紫外（EUV）可变形标线卡盘具有绝缘材料的基底，其具有从基底的第一侧向外延伸的多个突起。 电阻材料沿着多个突起下方的衬底的第二侧布置。 电阻材料被配置为响应于所施加的电流或电压而膨胀以调整掩模版的形状。
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公开(公告)号：US20150077733A1
公开(公告)日：2015-03-19
申请号：US14029844
申请日：2013-09-18
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chia-Ching Huang , Chia-Hao Hsu , Chia-Chen Chen
IPC: G03F7/20 , H01L21/683
CPC classification number: G03F7/70708 , C23C16/042 , C23C16/34 , C23C16/56 , G03F7/70633 , G03F7/70783 , H01L21/6833 , Y10T29/49155
Abstract: Some embodiments of the present disclosure relate to a method of overlay control which utilizes a deformable electrostatic chuck. The method comprises exposing a substrate to radiation which is reflected off of a reticle. The reticle is mounted to a deformable electrostatic chuck by a plurality of raised contacts, where each raised contact is configured to independently vary in height from a surface of the deformable electrostatic chuck. After exposure of the substrate to radiation which is reflected off of the reticle, a displacement between a first alignment shape formed on a first layer disposed on a surface of the substrate and a second alignment shape formed by the exposure is measured. The height of one or more of the plurality of raised contact is changed based upon the displacement to alter a surface topology of the reticle, which negates some effects of clamping topology. Other embodiments are also disclosed.
Abstract translation: 本公开的一些实施例涉及利用可变形的静电卡盘的覆盖控制的方法。 该方法包括将衬底暴露于从掩模版反射的辐射。 通过多个凸起的触点将掩模版安装到可变形的静电卡盘上，其中每个凸起的触点构造成独立地从可变形的静电卡盘的表面改变高度。 在将衬底暴露于从掩模版反射的辐射之后，测量形成在设置在衬底表面上的第一层上形成的第一对准形状与通过曝光形成的第二取向形状之间的位移。 基于位移改变多个凸起接触中的一个或多个的高度，以改变掩模版的表面拓扑，这消除了钳位拓扑的一些影响。 还公开了其他实施例。
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公开(公告)号：US20240310741A1
公开(公告)日：2024-09-19
申请号：US18673669
申请日：2024-05-24
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yu-Fu Lin , Shih-Chang Shih , Chia-Chen Chen
CPC classification number: G03F7/70858 , B01D53/0407 , B01D53/30 , C23C16/4412 , B01D2257/108 , B01D2257/553 , B01D2257/93 , B01D2258/0216
Abstract: An exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas includes: a main exhaust pipe above the semiconductor manufacturing equipment and having a top surface on a first side and a bottom surface on a second side, a first branch pipe connected to a source of a gas mixture containing the hazardous gas on the second side and connected to the main exhaust pipe through the top surface, a second branch pipe connected to a gas box on the second side and connected to the main exhaust pipe through the bottom surface, and a detector on the second branch pipe configured to detect presence of the hazardous gas and downstream to the gas box. The first and the second branch pipes are connected to the main exhaust pipe at a first location and a second location, respectively. The first location is more upstream than the second location.
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公开(公告)号：US11681232B2
公开(公告)日：2023-06-20
申请号：US17233203
申请日：2021-04-16
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yu-Fu Lin , Shih-Chang Shih , Chia-Chen Chen
CPC classification number: G03F7/70858 , B01D53/0407 , B01D53/30 , C23C16/4412 , B01D2257/108 , B01D2257/553 , B01D2257/93 , B01D2258/0216
Abstract: The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe having a top surface and a bottom surface; a first branch pipe including an upstream end coupled to a source of a gas mixture containing the hazardous gas and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.
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Patent Agency Ranking
公开(公告)号：US11272606B2
公开(公告)日：2022-03-08
申请号：US15801225
申请日：2017-11-01
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Shang-Chieh Chien , Po-Chung Cheng , Chia-Chen Chen , Jen-Yang Chung , Li-Jui Chen , Tzung-Chi Fu , Shang-Ying Wu
Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH4 to Sn.
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27.发明授权公开(公告)号：US11029613B2
公开(公告)日：2021-06-08
申请号：US16933872
申请日：2020-07-20
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Yen-Hsun Chen , Ming-Hsun Tsai , Shao-Hua Wang , Han-Lung Chang , Li-Jui Chen , Chia-Chen Chen
Abstract: An extreme ultraviolet radiation source apparatus includes a chamber including at least a droplet generator, a nozzle of the droplet generator, and a dry ice blasting assembly. The droplet generator includes a reservoir for a molten metal, and the nozzle has a first end connected to the reservoir and a second opposing end where molten metal droplets emerge from the nozzle. The dry ice blasting assembly includes a blasting nozzle, a blasting air inlet and a blaster carbon dioxide (CO2) inlet. The blasting nozzle is disposed inside the chamber. The blasting nozzle is arranged to direct a pressurized air stream and dry ice particles at the nozzle of the droplet generator.
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公开(公告)号：US10429314B2
公开(公告)日：2019-10-01
申请号：US15883971
申请日：2018-01-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Lin Louis Chang , Shang-Chieh Chien , Shang-Ying Wu , Li-Kai Cheng , Tzung-Chi Fu , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng , Anthony Yen , Chia-Chen Chen
IPC: G01N21/94 , G01N21/88 , G03F7/20 , H01L21/027 , G01N21/956
Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.
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公开(公告)号：US10156794B1
公开(公告)日：2018-12-18
申请号：US15692098
申请日：2017-08-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Sheng-Kang Yu , Yu-Fu Lin , Chia-Chen Chen
IPC: G01C15/10 , G02B26/08 , G01B11/27 , G03F7/20 , H01L21/033 , H01L21/308 , H01L21/68 , G01B11/16 , G01B11/26 , G01D5/26 , G03F7/00
Abstract: Positioning devices and positioning methods are provided. The positioning device includes a laser source and an optical assembly. The optical assembly is configured to direct a laser beam projected from the laser source toward a floor and a ceiling of a semiconductor fabrication facility to generate a first laser line on the floor and a second laser line on the ceiling. The first laser line and the second laser line are parallel to and aligned with each other when viewed in a direction perpendicular to the floor and the ceiling. Accordingly, the first laser line and the second laser line can be used to align a semiconductor tool and an overhead hoist transport system in the semiconductor fabrication facility.
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公开(公告)号：US09735065B2
公开(公告)日：2017-08-15
申请号：US14656754
申请日：2015-03-13
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Chia-Hao Hsu , Pei-Cheng Hsu , Chia-Ching Huang , Chih-Ming Chen , Chia-Chen Chen
IPC: G06F17/50 , H01L21/66 , H01L21/02 , G03F1/00 , H01L21/311 , H01L21/3205 , H01L21/321 , H01L21/3213
CPC classification number: H01L22/12 , G03F1/00 , G06F17/5068 , H01L21/02697 , H01L21/31144 , H01L21/32051 , H01L21/3212 , H01L21/32133
Abstract: A system and method of compensating for local focus errors in a semiconductor process. The method includes providing a reticle and applying, at a first portion of the reticle, a step height based on an estimated local focus error for a first portion of a wafer corresponding to the first portion of the reticle. A multilayer coating is formed over the reticle and an absorber layer is formed over the multilayer coating. A photoresist is formed over the absorber layer. The photoresist is patterned, an etch is performed of the absorber layer and residual photoresist is removed.
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