公开(公告)号：US20230296992A1

公开(公告)日：2023-09-21

申请号：US18324889

申请日：2023-05-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yu TU ,  Chieh HSIEH ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/20 ,  H05G2/00

CPC classification number: G03F7/7085 ,  H05G2/008 ,  H05G2/005 ,  G03F7/70033 ,  G03F7/70925 ,  G03F7/70916

Abstract: An extreme ultraviolet (EUV) photolithography system detects debris travelling from an EUV generation chamber to a scanner. The photolithography system includes a detection light source and a sensor. The detection light source outputs a detection light across a path of travel of debris particles from the EUV generation chamber. The sensor senses debris particles by detecting interaction of the debris particles with the detection light.

公开(公告)号：US20230273526A1

公开(公告)日：2023-08-31

申请号：US18304778

申请日：2023-04-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ssu-Yu CHEN ,  Hsin-Feng CHEN ,  Chi YANG ,  Li-Jui CHEN

IPC: G03F7/20

CPC classification number: G03F7/70033

Abstract: A method includes dispensing a droplet into a vacuum chamber; firing a pre-pulse laser to the droplet; sensing a first image of a return beam of the pre-pulse laser from the droplet; after firing the pre-pulse laser, firing a main-pulse laser to the droplet, wherein when the main-pulse laser hits the droplet, the droplet is vaporized into a plasma that emits extreme ultraviolet radiation; after sensing the first image and firing the main-pulse laser, sensing a second image of a return beam of the main-pulse laser from the droplet; and adjusting a plasma position in the vacuum chamber according to at least the second image.

公开(公告)号：US20230189422A1

公开(公告)日：2023-06-15

申请号：US18064858

申请日：2022-12-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Kuang SUN ,  Cheng-Hao LAI ,  Yu-Huan CHEN ,  Wei-Shin CHENG ,  Ming-Hsun TSAI ,  Hsin-Feng CHEN ,  Chiao-Hua CHENG ,  Cheng-Hsuan WU ,  Yu-Fa LO ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: H05G2/00 ,  G03F7/20

CPC classification number: H05G2/006 ,  G03F7/70033 ,  H05G2/005 ,  H05G2/008

Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a droplet generator with a nozzle and a piezoelectric structure coupled to the nozzle. The generator outputs groups of droplets. A control system applies a voltage waveform to the piezoelectric structure while the nozzle outputs the group of droplets. The waveform causes the droplets of the group to have a spread of velocities that results in the droplets coalescing into a single droplet prior to being irradiated by the laser.

公开(公告)号：US20220334472A1

公开(公告)日：2022-10-20

申请号：US17232483

申请日：2021-04-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Hung TSAI ,  Sheng-Kang YU ,  Shang-Chieh CHIEN ,  Heng-Hsin LIU ,  Li-Jui CHEN

IPC: G03F7/00 ,  G03F7/22 ,  G03F7/20 ,  G03F7/36

Abstract: A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.

公开(公告)号：US20220299883A1

公开(公告)日：2022-09-22

申请号：US17484945

申请日：2021-09-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yu TU ,  Chieh HSIEH ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin Liu

IPC: G03F7/20 ,  G01N15/06 ,  H05G2/00 ,  B08B5/02 ,  B08B7/00 ,  B08B13/00 ,  B08B7/04 ,  B08B3/08

Abstract: An extreme ultraviolet (EUV) photolithography system detects debris travelling from an EUV generation chamber to a scanner. The photolithography system includes a detection light source and a sensor. The detection light source outputs a detection light across a path of travel of debris particles from the EUV generation chamber. The sensor senses debris particles by detecting interaction of the debris particles with the detection light.

公开(公告)号：US20220260927A1

公开(公告)日：2022-08-18

申请号：US17734774

申请日：2022-05-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ssu-Yu CHEN ,  Shang-Chieh CHIEN ,  Li-Jui CHEN

IPC: G03F7/20 ,  H05G2/00

Abstract: In accordance with some embodiments, a method of controlling an extreme ultraviolet (EUV) radiation in lithography system is provided. The method includes generating a plurality of target droplets. The method also includes generating a pre-pulse and a main pulse from an excitation laser module to generate EUV light and reflecting the EUV light by a collector mirror. The method further includes measuring a separation between a pre-pulse and a main pulse. Moreover, the method includes determining whether the separation between the pre-pulse and the main pulse in the y-axis is changed, if not adjusting a configurable parameter of the excitation laser module to set the variation in the energy of the EUV light within an acceptable range.

公开(公告)号：US20220225490A1

公开(公告)日：2022-07-14

申请号：US17712373

申请日：2022-04-04

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ssu-Yu CHEN ,  Shang-Chieh CHIEN ,  Li-Jui CHEN

IPC: H05G2/00 ,  G03F7/20

Abstract: An extreme ultraviolet (EUV) light source and a method for patterning a resist layer on a substrate using the EUV light source are disclosed. For example, the EUV light source includes a droplet generator, a droplet catcher, a laser source, a plurality of vanes, and a bucket. The droplet generator is to generate tin droplets. The droplet catcher is opposite to the droplet generator to catch the tin droplets. The laser source is to generate a laser beam striking the tin droplets to form a plasma. The plurality of vanes are arranged around an axis to collect tin debris created from the plasma. The bucket is connected to the vanes and includes a cover, a vane bucket, and a heater. The cover has an opening. The vane bucket is surrounded by the cover. The heater is on a sidewall of the cover and spaced apart from the droplet catcher.

公开(公告)号：US20210364931A1

公开(公告)日：2021-11-25

申请号：US16882086

申请日：2020-05-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ssu-Yu CHEN ,  Shang-Chieh CHIEN ,  Li-Jui CHEN

IPC: G03F7/20 ,  H05G2/00

Abstract: In accordance with some embodiments, a method of controlling an extreme ultraviolet (EUV) radiation in lithography system is provided. The method includes generating a plurality of target droplets. The method also includes generating a pre-pulse and a main pulse from an excitation laser module to generate EUV light and reflecting the EUV light by a collector mirror. The method further includes measuring a separation between a pre-pulse and a main pulse. Moreover, the method includes determining whether the separation between the pre-pulse and the main pulse in the y-axis is changed, if not adjusting a configurable parameter of the excitation laser module to set the variation in the energy of the EUV light within an acceptable range.

公开(公告)号：US20210318625A1

公开(公告)日：2021-10-14

申请号：US16845006

申请日：2020-04-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chi YANG ,  Yen-Shuo SU ,  Jui-Pin WU ,  Li-Jui CHEN

IPC: G03F7/20 ,  H01L21/66

Abstract: In accordance with some embodiments, a lithography method in semiconductor manufacturing is provided. The lithography method includes transmitting a main pulse laser to a zone of excitation through a first optic assembly. The lithography method further includes supplying a coolant to the first optic assembly and detecting a temperature of the coolant with a use of at least one sensor. The lithography method also includes adjusting a heat transfer rate between the coolant and the first optic assembly based on the temperature of the first optic assembly. In addition, the lithography method includes generating a droplet of a target material into the zone of excitation. The lithography method further includes exciting the droplet of the target material into plasma with the main pulse laser in the zone of excitation.

公开(公告)号：US20200350194A1

公开(公告)日：2020-11-05

申请号：US16926935

申请日：2020-07-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chueh-Chi KUO ,  Tsung-Yen LEE ,  Chia-Hsin CHOU ,  Tzung-Chi FU ,  Li-Jui CHEN ,  Po-Chung CHENG ,  Che-Chang HSU

IPC: H01L21/683 ,  G03F1/24 ,  G03F7/20

Abstract: A reticle holding tool is provided. The reticle holding tool includes a housing, a reticle chuck, and a gas delivery assembly. The housing includes an opening, a top housing member, and a lateral housing member extending from the top housing member and terminating at a lower edge which is located on a predetermined plane. The reticle chuck is positioned in the housing and has an effective surface configured to secure a reticle. The effective surface is located between the predetermined plane and the top housing member. The reticle chuck is movable between two boundary lines that are perpendicular to the effective surface. A width of the opening is greater than a distance between the two boundary lines. The gas delivery assembly is positioned within the housing and configured to supply gas into the housing.