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43 条记录 (耗时 0.033 秒)

    Process for producing meta-aromatic polyamide fiber
    21.
    发明授权
    Process for producing meta-aromatic polyamide fiber 失效
    制备间位芳族聚酰胺纤维的方法

    公开(公告)号：US06569987B1

    公开(公告)日：2003-05-27

    申请号：US09868863

    申请日：2001-06-21

    申请人： Akihiro Ohba ,  Takashi Yoshitomi ,  Hirozumi Iwasaki ,  Kotaro Takiue

    发明人： Akihiro Ohba ,  Takashi Yoshitomi ,  Hirozumi Iwasaki ,  Kotaro Takiue

    IPC分类号： C08G6900

    CPC分类号： D01F6/605

    摘要： To produce meta aramid filaments having a good quality from a polymer solution of a meta aramid produced by a solution polymerization method, with high efficiency, (1) a meta aramid is prepared by polymerization-reacting a aromatic meta-diamine with a aromatic meta-dicarboxylic acid chloride in a polar organic solvent; (2) hydrogen chloride contained in the resultant polymer solution is neutralized with a neutralizing agent containing an alkali metal hydroxide which can react with hydrogen chloride to produce a salt thereof insoluble in the polymerization solvent; (3) the salt deposited from the polymer solution is removed by filtration; (4) the resultant polymer solution is mixed with water and a polar organic amide solvent to prepare a spinning solution; (5) the resultant meta aramid spinning solution is directly extruded in the form of filamentary streams into an aqueous coagulation liquid, to coagulate the extruded filamentary streams of the polymer solution into the form of filaments; (6) the coagulated filaments are immersed in water to remove the salt and the solvent from the filaments; and (7) the water-washed filaments are drawn and heat-treated.

    摘要翻译： 为了从溶液聚合法生产的间位芳族聚合物的聚合物溶液中高效地制备具有良好质量的间位芳族聚酰胺长丝，（1）通过使芳族间二胺与芳族间二胺反应， 二羧酸氯化物在极性有机溶剂中; （2）所得聚合物溶液中所含的氯化氢用含碱金属氢氧化物的中和剂中和，该中和剂可与氯化氢反应，生成不溶于聚合溶剂的盐; （3）通过过滤除去由聚合物溶液沉积的盐; （4）将得到的聚合物溶液与水和极性有机酰胺溶剂混合以制备纺丝溶液; （5）将所得到的间位芳族聚酰胺纺丝溶液以丝状流的形式直接挤出成水凝固液体，使挤出的聚合物溶液的丝状流凝结成长丝形式; （6）将凝固的长丝浸入水中以从长丝中除去盐和溶剂; 和（7）水洗长丝被拉伸和热处理。

    MOSFET with a thin gate insulating film
    22.
    发明授权
    MOSFET with a thin gate insulating film 有权

    公开(公告)号：US06410952B1

    公开(公告)日：2002-06-25

    申请号：US09828205

    申请日：2001-04-09

    申请人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

    发明人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

    IPC分类号： H01L2976

    摘要： A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed on the substrate via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (TOX) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (Lg) of the gate electrode (2) is determined to be equal to or less than 0.3 &mgr;m; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined to be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly.

    MOSFET with a thin gate insulating film
    28.
    发明授权
    MOSFET with a thin gate insulating film 失效
    具有薄栅绝缘膜的MOSFET

    公开(公告)号：US07282752B2

    公开(公告)日：2007-10-16

    申请号：US11143594

    申请日：2005-06-03

    申请人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

    发明人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

    IPC分类号： H01L29/76

    CPC分类号： H01L29/66575 ,  H01L21/2255 ,  H01L21/2256 ,  H01L21/28211 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/78

    摘要： A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed an the substrate via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (TOX) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (Lg) of the gate electrode (2) is determined to be equal to or less than 0.3 μm; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined a be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly.

    摘要翻译： 半导体器件包括：p型半导体衬底（1）; 绝缘膜（3）; 经由所述绝缘膜形成所述基板的栅电极（2） 以及形成在形成在基板（1）上的栅电极（2）下方的沟道形成区域（4）的两侧的n型源极/漏极区域（5）。 特别地，在氧化硅膜的转换率（氧化硅当量厚度）下，确定绝缘膜（3）的厚度（T×OX ）小于2.5nm。 栅极（2）的栅极长度（L SUB）确定为等于或小于0.3μm; 并且进一步施加到栅电极（2）和漏区（6）的电压为1.5V以下。 因此，在具有隧穿栅极氧化膜（3）的MOSFET中，可以提高热载流子应力下的晶体管的可靠性，并且可以显着降低栅极漏电流，从而可以显着提高晶体管特性。

    MIM capacitor with diffusion barrier
    29.
    发明授权
    MIM capacitor with diffusion barrier 失效
    具有扩散阻挡层的MIM电容器

    公开(公告)号：US06864137B2

    公开(公告)日：2005-03-08

    申请号：US10619394

    申请日：2003-07-15

    申请人： Takashi Yoshitomi ,  Yuichi Nakashima

    发明人： Takashi Yoshitomi ,  Yuichi Nakashima

    IPC分类号： H01L23/52 ,  H01L21/02 ,  H01L21/304 ,  H01L21/311 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/822 ,  H01L27/04 ,  H01L21/8242

    CPC分类号： H01L28/40 ,  H01L21/31116 ,  H01L21/31604 ,  H01L21/32136 ,  H01L21/76801 ,  H01L21/76834 ,  Y10S438/957

    摘要： A process of manufacturing a semiconductor device. The initial process steps are forming a first insulating film above a semiconductor substrate and removing a selected portion of the first insulating film to form an opening. The next step is depositing a first electrode, a dielectric film and a second electrode successively on a bottom portion of the opening, The deposits being oriented such that they are in substantially parallel relationship with a surface of the semiconductor substrate. The final steps are removing selected portions of the first electrode, the dielectric film and the second electrode, forming a capacitor at a selected position in the opening, forming a second insulating film at least in the opening, and forming a third insulating film on the second insulating film.

    摘要翻译： 一种制造半导体器件的工艺。 初始工艺步骤是在半导体衬底上形成第一绝缘膜，并去除第一绝缘膜的选定部分以形成开口。 下一步是在开口的底部依次沉积第一电极，电介质膜和第二电极。沉积物取向为使得它们与半导体衬底的表面基本平行。 最后的步骤是去除第一电极，电介质膜和第二电极的选定部分，在开口中的选定位置形成电容器，至少在开口中形成第二绝缘膜，并在第二绝缘膜上形成第三绝缘膜 第二绝缘膜。

    Semiconductor device having capacitor and method of manufacturing the same
    30.
    发明授权
    Semiconductor device having capacitor and method of manufacturing the same 失效

    公开(公告)号：US06746929B2

    公开(公告)日：2004-06-08

    申请号：US10263186

    申请日：2002-10-03

    申请人： Takashi Yoshitomi ,  Masahiko Matsumoto

    发明人： Takashi Yoshitomi ,  Masahiko Matsumoto

    IPC分类号： H01L2120

    CPC分类号： H01L28/40

    摘要： A semiconductor device, comprising a first wiring formed in a first insulating film, a second insulating film formed on the first insulating film, a first electrode film selectively formed on the second insulating film, a third insulating film formed on the first electrode film, and having an end portion and a central portion, wherein the end portion has a thickness thinner than the central portion, a second electrode film formed on the central portion of the third insulating film such that the second electrode film faces the first electrode film.