公开(公告)号：US07968905B2

公开(公告)日：2011-06-28

申请号：US12165794

申请日：2008-07-01

申请人： Tomofumi Yamamuro ,  Michihiro Sano ,  Naochika Horio ,  Hiroyuki Kato ,  Akio Ogawa ,  Hiroshi Kotani

发明人： Tomofumi Yamamuro ,  Michihiro Sano ,  Naochika Horio ,  Hiroyuki Kato ,  Akio Ogawa ,  Hiroshi Kotani

IPC分类号： H01L29/20 ,  H01L33/00

CPC分类号： H01L33/285

摘要： A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

摘要翻译： 含ZnO的半导体层含有添加到ZnO中的Se或S，具有紫外光的发射峰值波长和视觉光的发射峰值波长。 通过将含ZnO的半导体层与被发射的紫外线激发的荧光体或半导体结合并发射视觉光，可以发出各种波长的视觉光。

公开(公告)号：US07943927B2

公开(公告)日：2011-05-17

申请号：US12501764

申请日：2009-07-13

申请人： Akio Ogawa ,  Michihiro Sano ,  Hiroyuki Kato ,  Hiroshi Kotani ,  Tomofumi Yamamuro

发明人： Akio Ogawa ,  Michihiro Sano ,  Hiroyuki Kato ,  Hiroshi Kotani ,  Tomofumi Yamamuro

IPC分类号： H01L33/00

CPC分类号： H01L21/02433 ,  H01L21/0237 ,  H01L21/02403 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/02609 ,  H01L21/02631 ,  H01L33/28

摘要： A ZnO based semiconductor light emitting device includes: a first semiconductor layer containing ZnO1-x1Sx1; a second semiconductor layer formed above the first semiconductor layer and containing ZnO1-x2Sx2; and a third semiconductor layer formed above the second semiconductor layer and containing ZnO1-x3Sx3, wherein an S composition x1 of the first semiconductor layer, an S composition x2 of the second semiconductor layer and an S composition x3 of the third semiconductor layer are so selected that an energy of the second semiconductor layer at the lower end of a conduction band becomes lower than both energies of the first and third semiconductor layers at the lower end of the conduction bands, and that an energy of the second semiconductor layer at the upper end of a valence band becomes higher than both energies of the first and third semiconductor layers at the upper end of the valence bands.

摘要翻译： ZnO基半导体发光器件包括：含有ZnO1-x1Sx1的第一半导体层; 形成在第一半导体层之上并含有ZnO1-x2Sx2的第二半导体层; 以及第三半导体层，其形成在所述第二半导体层的上方并且包含ZnO1-x3Sx3，其中所述第一半导体层的S组成x1，所述第二半导体层的S组成x2和所述第三半导体层的S组成x3被选择 导带下端的第二半导体层的能量变得低于导带下端的第一和第三半导体层的能量的两者的能量，并且第二半导体层在上端的能量 的价带变得高于在价带上端的第一和第三半导体层的能量的两个能量。

公开(公告)号：US07718468B2

公开(公告)日：2010-05-18

申请号：US12194791

申请日：2008-08-20

申请人： Tomofumi Yamamuro ,  Michihiro Sano ,  Hiroyuki Kato ,  Akio Ogawa

发明人： Tomofumi Yamamuro ,  Michihiro Sano ,  Hiroyuki Kato ,  Akio Ogawa

IPC分类号： H01L21/00

CPC分类号： H01L21/0237 ,  H01L21/02403 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02661

摘要： A method includes (a) preparing a substrate, and (b) growing a ZnO-containing compound semiconductor layer above the substrate by supplying at the same time at least Zn and O as source gases and S as a surfactant.

摘要翻译： 一种方法包括（a）制备衬底，以及（b）通过同时至少供给作为源气体的Zn和O以及S作为表面活性剂，生长在衬底上方的含ZnO化合物半导体层。

公开(公告)号：US20090272972A1

公开(公告)日：2009-11-05

申请号：US12501764

申请日：2009-07-13

申请人： Akio Ogawa ,  Michihiro Sano ,  Hiroyuki Kato ,  Hiroshi Kotani ,  Tomofumi Yamamuro

发明人： Akio Ogawa ,  Michihiro Sano ,  Hiroyuki Kato ,  Hiroshi Kotani ,  Tomofumi Yamamuro

IPC分类号： H01L33/00

CPC分类号： H01L21/02433 ,  H01L21/0237 ,  H01L21/02403 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/02609 ,  H01L21/02631 ,  H01L33/28

摘要： A ZnO based semiconductor light emitting device includes: a first semiconductor layer containing ZnO1-x1Sx1; a second semiconductor layer formed above the first semiconductor layer and containing ZnO1-x2Sx2; and a third semiconductor layer formed above the second semiconductor layer and containing ZnO1-x3Sx3, wherein an S composition x1 of the first semiconductor layer, an S composition x2 of the second semiconductor layer and an S composition x3 of the third semiconductor layer are so selected that an energy of the second semiconductor layer at the lower end of a conduction band becomes lower than both energies of the first and third semiconductor layers at the lower end of the conduction bands, and that an energy of the second semiconductor layer at the upper end of a valence band becomes higher than both energies of the first and third semiconductor layers at the upper end of the valence bands.

摘要翻译： ZnO基半导体发光器件包括：含有ZnO1-x1Sx1的第一半导体层; 形成在第一半导体层之上并含有ZnO1-x2Sx2的第二半导体层; 以及第三半导体层，其形成在所述第二半导体层的上方并且包含ZnO1-x3Sx3，其中所述第一半导体层的S组成x1，所述第二半导体层的S组成x2和所述第三半导体层的S组成x3被选择 导带下端的第二半导体层的能量变得低于导带下端的第一和第三半导体层的能量的两者的能量，并且第二半导体层在上端的能量 的价带变得高于在价带上端的第一和第三半导体层的能量的两个能量。

公开(公告)号：US20070193605A1

公开(公告)日：2007-08-23

申请号：US11701846

申请日：2007-02-02

申请人： Hisashi Kuroshima ,  Akio Ogawa ,  Kojiro Kotani ,  Takayoshi Iwanami ,  Hideto Onishi

发明人： Hisashi Kuroshima ,  Akio Ogawa ,  Kojiro Kotani ,  Takayoshi Iwanami ,  Hideto Onishi

IPC分类号： B08B9/00 ,  B08B7/04 ,  B08B3/00

CPC分类号： A61B1/123 ,  A61B1/015 ,  A61B1/125 ,  A61B90/70 ,  A61B2090/701 ,  A61L2/18 ,  A61L2/24 ,  A61L2202/17 ,  A61L2202/24

摘要： An apparatus washes/disinfects, at a time, a plurality of endoscopes having a plurality of channels with different diameters, and dewaters the channels at a time. For the dewatering, the apparatus includes plural ports for receiving air supply, and a plurality of tubes for connecting between each of the plurality of ports and each of the plurality of channels in each of the plurality of endoscopes. The apparatus also includes an on-off valve for intermittently supply air to the ports, and a control unit for opening/closing the valve a plurality of times at a predetermined ratio. Water droplets remaining in a large-diameter channel are mainly moved by wind pressure of continuously flowing air while the valve is open, and discharged. Water droplets in a smaller-diameter channel are mainly moved by hammer effect of high-pressure air caused while the valve is closed, and discharged. The valve opening/closing is repeated for complete dewatering.

摘要翻译： 一次装置一次洗涤/消毒多个具有不同直径的通道的内窥镜，并一次对通道进行脱水。 为了脱水，该装置包括用于接收空气供应的多个端口和用于在多个端口中的每一个和多个内窥镜中的每一个中的多个通道中的每一个连接的多个管。 该装置还包括用于向端口间歇地供给空气的开关阀和用于以预定比率多次打开/关闭阀的控制单元。 留在大直径通道中的水滴主要是通过持续流动的空气的风压在阀门打开时移动并排出。 较小直径通道中的水滴主要是通过在阀门关闭时引起的高压空气的锤击作用而移动，并排出。 阀门打开/关闭重复进行完全脱水。

公开(公告)号：US20050028354A1

公开(公告)日：2005-02-10

申请号：US10938535

申请日：2004-09-13

申请人： Hiroshi Shindo ,  Akio Ogawa ,  Kazushige Tohta

发明人： Hiroshi Shindo ,  Akio Ogawa ,  Kazushige Tohta

IPC分类号： B24B1/00 ,  B24B19/26 ,  B24B37/04 ,  B24B49/04 ,  B24B49/10 ,  G11B5/187 ,  G11B5/31 ,  G11B5/39 ,  G11B5/127 ,  B23P19/00 ,  H04R31/00

CPC分类号： B24B37/013 ,  B24B37/048 ,  B24B49/04 ,  B24B49/10 ,  G11B5/1871 ,  G11B5/3103 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3166 ,  G11B5/3173 ,  Y10S156/923 ,  Y10T29/49032 ,  Y10T29/49036 ,  Y10T29/49037 ,  Y10T29/49041 ,  Y10T29/49048 ,  Y10T29/4905 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49174 ,  Y10T29/53165 ,  Y10T29/53174 ,  Y10T29/53265 ,  Y10T156/1082 ,  Y10T156/1168

摘要： The present invention is an object to provide an apparatus or a method making it possible to easily effect connection between additional electrodes, etc. and lead electrodes when performing a processing for achieving a predetermined throat height value or crown processing or the like and making it possible to measure the requisite lapping amount. For achieving the object, a flexible electrode extension sheet is used which consists of a portion for retaining a ceramic bar in which element portions are formed and a portion where there are formed wirings respectively in correspondence with the elements and adapted to be connected to these elements, in which these wirings, which can be easily connected to an external measurement system, are electrically connected to the elements, whereby the lapping amount is easily obtained from the characteristic amount of the elements in the lapping process.

摘要翻译： 本发明的目的是提供一种装置或方法，其可以在进行用于实现预定的喉部高度值或冠部加工等的处理时容易地实现附加电极等与引线电极之间的连接，并使其成为可能 测量必要的研磨量。 为了实现该目的，使用了柔性电极延伸片，其由用于保持形成元件部分的陶瓷棒的部分和分别与元件对应形成布线的部分组成，并适于连接到这些元件 其中可以容易地连接到外部测量系统的这些布线电连接到元件，由此在研磨过程中容易从元件的特征量获得研磨量。

公开(公告)号：US5075411A

公开(公告)日：1991-12-24

申请号：US480786

申请日：1990-02-16

申请人： Akio Ogawa ,  Yukio Ohsaki ,  Takeichiro Takehara ,  Tadashi Ashida ,  Seiichiro Hashimoto

发明人： Akio Ogawa ,  Yukio Ohsaki ,  Takeichiro Takehara ,  Tadashi Ashida ,  Seiichiro Hashimoto

IPC分类号： C08G59/20 ,  C08G59/08 ,  C08G59/40 ,  C08G59/60 ,  C08L63/00 ,  C08L79/02 ,  C09J163/04

CPC分类号： C08L63/00 ,  C08L79/02

摘要： A curable epoxy resin composition comprises (I) an epoxy resin and (II) a curing agent. It may comprise (III) another curing agent. It is preferable for it to comprise 25 to 95 wt.% of (I) and 5 to 45 wt.% of (II).1 an epoxy resin (I) represented by the general formula: ##STR1## wherein Z represents a group selected from among a hydrogen atom, a methyl group and an ethyl group, R represents a group selected from among a hydrogen atom and alkyl groups, and n represents a number of 0 to 1.6, and2 a curing agent comprising a polyamine reaction composition (II) obtained by reacting 1 mol of a phenol (II-1) having at least one unsubstituted reactive site in the aromatic nucleus with at least 1 mol of an aliphatic polyamine (II-2) and at least 1 mol of a carbonyl compound (II-3) having at least one carbonyl group in the molecule.

摘要翻译： 可固化环氧树脂组合物包含（I）环氧树脂和（II）固化剂。 它可以包含（III）另一种固化剂。 优选包含25〜95重量％的（I）和5〜45重量％的（II）。 + E，crc / 1 /由以下通式表示的环氧树脂（I）：其中Z表示选自氢原子，甲基和乙基的基团，R表示选自 氢原子和烷基，n表示0〜1.6的数，+ E，crc / 2 / a固化剂，其含有多胺反应组合物（II），其通过使1摩尔的苯酚（II-1） 在分子中具有至少1摩尔脂族多胺（II-2）和至少1摩尔具有至少一个羰基的羰基化合物（II-3）的至少一个未取代的反应性位点在芳香核中。

公开(公告)号：US4977201A

公开(公告)日：1990-12-11

申请号：US315524

申请日：1989-02-24

申请人： Akio Ogawa ,  Masahiko Shimada ,  Kazuhiko Ando

发明人： Akio Ogawa ,  Masahiko Shimada ,  Kazuhiko Ando

IPC分类号： C08L27/06 ,  C08L63/10

CPC分类号： C08L27/06 ,  C08L63/10

摘要： The present invention provides a polyvinyl chloride plastisol composition characterized by containing a specified epoxy resin, a blocked isocyanate and, if necessary, a latent curing agent for an epoxy resin as tackifiers. This plastisol composition is excellent in storage stability and can strongly adhere to various metals and various undercoate of metals (such as electro-deposit) by baking even at a relatively low temperature to give a coating which is free from blowing and exhibits excellent adhesion after the immersion in hot water or the heating. Therefore, the composition is useful as a body sealer or undercoat for an automotive body.

公开(公告)号：US08546797B2

公开(公告)日：2013-10-01

申请号：US12907127

申请日：2010-10-19

申请人： Tomofumi Yamamuro ,  Hiroyuki Kato ,  Akio Ogawa

发明人： Tomofumi Yamamuro ,  Hiroyuki Kato ,  Akio Ogawa

IPC分类号： H01L29/12 ,  H01L21/00

CPC分类号： H01L21/02554 ,  H01L21/0237 ,  H01L21/02403 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  H01L33/0087 ,  H01L33/285

摘要： In a ZnO based compound semiconductor device, nitrogen (N) doped (Mg)ZnO:N layer is inserted as a diffusion barrier layer 9 between a ZnO based n-type layer 3 to which n-type dopants are doped and an active layer 4 or a p-type layer 5. The diffusion barrier layer 9 prevents diffusion of the n-type dopants to the active layer 4 or the p-type layer 5. Crystalline quality of the active layer 4 of the ZnO based compound semiconductor device is not deteriorated by the diffusion of the n-type dopants.

摘要翻译： 在基于ZnO的化合物半导体器件中，在掺杂有n型掺杂剂的ZnO基n型层3和有源层4之间插入氮（N）掺杂（Mg）ZnO：N层作为扩散阻挡层9 或p型层5.扩散阻挡层9防止n型掺杂剂扩散到有源层4或p型层5. ZnO基化合物半导体器件的有源层4的结晶质量不是 由于n型掺杂剂的扩散而劣化。

公开(公告)号：US08138754B2

公开(公告)日：2012-03-20

申请号：US12467335

申请日：2009-05-18

申请人： Akio Ogawa ,  Tsutomu Chikamatsu ,  Kazuyuki Kobayashi ,  Haruhiko Yamaguchi ,  Kazunori Matsuiwa ,  Masaki Ohashi ,  Kazuyoshi Nakajima ,  Kiyotaka Shindo

发明人： Akio Ogawa ,  Tsutomu Chikamatsu ,  Kazuyuki Kobayashi ,  Haruhiko Yamaguchi ,  Kazunori Matsuiwa ,  Masaki Ohashi ,  Kazuyoshi Nakajima ,  Kiyotaka Shindo

IPC分类号： G01R33/12

CPC分类号： G11B5/455

摘要： The characteristics of thin-film magnetic heads are evaluated by measuring, in a step and repeat method and apparatus, the magnetic field generated by the respective heads in a bar including multiple heads.

摘要翻译： 通过在步骤和重复方法和装置中测量由包括多个头的棒中的各个头产生的磁场来评估薄膜磁头的特性。