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    Semiconductor wafer front side protection
    21.
    发明授权
    Semiconductor wafer front side protection 失效
    半导体晶圆正面保护

    公开(公告)号：US07288465B2

    公开(公告)日：2007-10-30

    申请号：US11117122

    申请日：2005-04-28

    Applicant: Allan D. Abrams ,  Donald W. Brouillette ,  Joseph D. Danaher ,  Timothy C. Krywanczyk ,  Rene A. Lamothe ,  Ivan J. Stone ,  Matthew R. Whalen

    Inventor： Allan D. Abrams ,  Donald W. Brouillette ,  Joseph D. Danaher ,  Timothy C. Krywanczyk ,  Rene A. Lamothe ,  Ivan J. Stone ,  Matthew R. Whalen

    IPC: H01L21/30 ,  H01L21/46

    CPC classification number: H01L21/3081 ,  H01L21/304 ,  H01L2221/6834

    Abstract: There is provided a method for making a wafer comprising the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second peripheral region adjacent to the first peripheral region. The method includes applying a fluid to the first surface and the first peripheral region of the at least one side edge and removing the opposite second surface and the second peripheral region of the at least one side edge to form a third surface. A semiconductor chip made from the method for making the wafer is also provided.

    Abstract translation: 提供了一种用于制造晶片的方法，包括以下步骤：提供具有第一表面，相对的第二表面和限定衬底的厚度的至少一个侧边缘的衬底，所述至少一个侧边缘具有第一周边区域 以及与第一周边区域相邻的第二周边区域。 该方法包括将流体施加到至少一个侧边缘的第一表面和第一周边区域，并且移除至少一个侧边缘的相对的第二表面和第二周边区域以形成第三表面。 还提供了由制造晶片的方法制成的半导体芯片。

    Use of photoresist in substrate vias during backside grind
    22.
    发明授权
    Use of photoresist in substrate vias during backside grind 失效
    在背面研磨过程中在基板通孔中使用光致抗蚀剂

    公开(公告)号：US07074715B2

    公开(公告)日：2006-07-11

    申请号：US10989059

    申请日：2004-11-15

    Applicant: Donald W. Brouillette ,  Joseph D. Danaher ,  Timothy C. Krywanczyk ,  Amye L. Wells

    Inventor： Donald W. Brouillette ,  Joseph D. Danaher ,  Timothy C. Krywanczyk ,  Amye L. Wells

    IPC: H01L21/4763

    CPC classification number: H01L21/76898

    Abstract: A structure and method of formation. The substrate has front and back surfaces on opposite sides of the substrate. The substrate has a backside portion extending from the back surface to a second depth into the substrate as measured from the front surface. At least one via is formed in the substrate and extends from the front surface to a via depth into the substrate. The via depth is specific to each via. The via depth of each via is less than an initial thickness of the substrate. The second depth does not exceed the minimum via depth of the via depths. Organic material (e.g., photoresist) is inserted into each via. The organic material is subsequently covered with a tape, followed by removal of the backside portion of the substrate. The tape is subsequently removed from the organic material, followed by removal of the organic material from each via.

    Abstract translation: 一种结构和形成方法。 衬底在衬底的相对侧上具有前表面和后表面。 衬底具有从前表面测量的从后表面延伸到衬底的第二深度的背侧部分。 在衬底中形成至少一个通孔，并从前表面延伸到通孔深度进入衬底。 通孔深度特定于每个通孔。 每个通孔的通孔深度小于衬底的初始厚度。 第二深度不超过通孔深度的最小值。 将有机材料（例如光致抗蚀剂）插入每个通孔中。 随后用带覆盖有机材料，随后除去基材的背面部分。 随后从有机材料中取出胶带，然后从每个通孔中除去有机材料。

    Method to prevent leaving residual metal in CMP process of metal interconnect
    23.
    发明授权
    Method to prevent leaving residual metal in CMP process of metal interconnect 失效
    防止金属互连CMP工艺中留下残留金属的方法

    公开(公告)号：US06599173B1

    公开(公告)日：2003-07-29

    申请号：US09608941

    申请日：2000-06-30

    Applicant: Jose L. Cruz ,  Cuc K. Huynh ,  Timothy C. Krywanczyk ,  Douglas K. Sturtevant

    Inventor： Jose L. Cruz ,  Cuc K. Huynh ,  Timothy C. Krywanczyk ,  Douglas K. Sturtevant

    IPC: B24B722

    CPC classification number: H01L21/3212 ,  Y02P80/30

    Abstract: A CMP slurry for and method of polishing a semiconductor wafer during formation of metal interconnects are disclosed. The present invention utilizes a first slurry comprising a first oxidizer, preferably ferric nitrate, to remove the excess metal of the metal interconnect but which leaves the metal residues on the surface of the wafer. A second slurry comprising another oxidizer, preferably potassium iodate solution, having a greater affinity to both the metal residue and the liner material than the underlying dielectric is used to remove the metal residue and liner material with significantly reduced scratching of the underlying dielectric. The more robust metal interconnects formed utilizing the present invention is effective in lowering the overall resistance of a wafer, reducing the number of shorts, and provides greater protection of the underlying dielectric. Overpolishing of the wafer and its associated problems are avoided.

    Abstract translation: 公开了一种用于在形成金属互连件期间研磨半导体晶片的CMP浆料和方法。 本发明利用包含第一氧化剂，优选硝酸铁的第一浆料来除去金属互连体的多余金属，但是留下晶片表面上的金属残留物。 使用包含另一种氧化剂（优选碘酸钾溶液）的第二种浆料，其比底层电介质对金属残余物和衬垫材料具有更大的亲和力，以便以显着减少的下面的电介质的刮擦去除金属残余物和衬垫材料。 利用本发明形成的更坚固的金属互连在降低晶片的整体电阻，减少短路数量方面是有效的，并且为下面的电介质提供更大的保护。 避免晶片的抛光及其相关问题。

    Chemical-mechanical-polishing slurry and method for polishing metal/oxide layers
    24.
    发明授权
    Chemical-mechanical-polishing slurry and method for polishing metal/oxide layers 有权
    化学机械抛光浆料和抛光金属/氧化物层的方法

    公开(公告)号：US06355565B2

    公开(公告)日：2002-03-12

    申请号：US09904323

    申请日：2001-07-12

    Applicant: Paul M. Feeney ,  Timothy C. Krywanczyk ,  Lawrence D. David ,  Matthew T. Tiersch ,  Eric J. White

    Inventor： Paul M. Feeney ,  Timothy C. Krywanczyk ,  Lawrence D. David ,  Matthew T. Tiersch ,  Eric J. White

    IPC: H01L2100

    CPC classification number: C09G1/02 ,  C09K3/1463 ,  C23F3/00 ,  H01L21/31053 ,  H01L21/3212

    Abstract: A ferric nitrate-alumina based slurry useful for Chemical-Mechanical-Polishing of tungsten metallurgy and silica based oxides on semiconductor substrates in which the suspension and stability of abrasive material in the slurry is essentially stable. The slurry formulation is balanced to provide low residue of foreign material after polishing and due to its reduced ferric nitrate concentration will be less corrosive than prior art slurries. The recipe for the slurry includes of a 30% wt silica suspension, about 800 ml of 40% by wt ferric nonahydrate, liters and enough 70% wt nitric acid to adjust the pH of the slurry to about 1.2 to 1.4.

    Abstract translation: 用于半导体衬底上的钨冶金和二氧化硅基氧化物的化学机械抛光的硝酸铁 - 氧化铝基浆料，其中在浆料中研磨材料的悬浮液和稳定性基本上是稳定的。 浆料配方是平衡的，在抛光后提供低的异物残留，并且由于其降低的硝酸铁浓度将比现有技术的浆料腐蚀性更小。 浆料的配方包括30重量％二氧化硅悬浮液，约800毫升40重量％的三水合九水合物，升和足够的70重量％的硝酸以将浆料的pH调节至约1.2至1.4。

    Chemical mechanical polishing slurry and method for polishing metal/oxide layers
    29.
    发明授权
    Chemical mechanical polishing slurry and method for polishing metal/oxide layers 失效
    化学机械抛光浆料和抛光金属/氧化物层的方法

    公开(公告)号：US06294105B1

    公开(公告)日：2001-09-25

    申请号：US08997290

    申请日：1997-12-23

    Applicant: Paul M. Feeney ,  Timothy C. Krywanczyk ,  Lawrence D. David ,  Matthew T. Tiersch ,  Eric J. White

    Inventor： Paul M. Feeney ,  Timothy C. Krywanczyk ,  Lawrence D. David ,  Matthew T. Tiersch ,  Eric J. White

    IPC: C09K1300

    CPC classification number: C09G1/02 ,  C09K3/1463 ,  C23F3/00 ,  H01L21/31053 ,  H01L21/3212

    Abstract: A ferric nitrate-alumina based slurry useful for Chemical-Mechanical-Polishing of tungsten metallurgy and silica based oxides on semiconductor substrates in which the suspension and stability of abrasive material in the slurry is essentially stable. The slurry formulation is balanced to provide low residue of foreign material after polishing and due to its reduced ferric nitrate concentration will be less corrosive than prior art slurries. The recipe for the slurry includes of a 30% wt silica suspension, about 800 ml of 40% by wt ferric nonahydrate and enough 70% wt nitric acid to adjust the pH of the slurry to about 1.2 to 1.4.

    Abstract translation: 用于半导体衬底上的钨冶金和二氧化硅基氧化物的化学机械抛光的硝酸铁 - 氧化铝基浆料，其中在浆料中研磨材料的悬浮液和稳定性基本上是稳定的。 浆料配方是平衡的，在抛光后提供低的异物残留，并且由于其降低的硝酸铁浓度将比现有技术的浆料腐蚀性更小。 该浆料的配方包括30重量％的二氧化硅悬浮液，约800毫升40重量％的三水合九水合物和足够的70重量％的硝酸以将浆料的pH调节至约1.2至1.4。

    Chemical mechanical polishing slurry for tungsten
    30.
    发明授权
    Chemical mechanical polishing slurry for tungsten 失效
    钨化学机械抛光浆

    公开(公告)号：US06284151B1

    公开(公告)日：2001-09-04

    申请号：US08997289

    申请日：1997-12-23

    Applicant: Timothy C. Krywanczyk ,  Lawrence D. David

    Inventor： Timothy C. Krywanczyk ,  Lawrence D. David

    IPC: C09K1304

    CPC classification number: C09K3/1463 ,  C09G1/02 ,  H01L21/3212

    Abstract: A ferric nitrate-alumina based slurry useful for Chemical-Mechanical-Polishing of tungsten metallurgy on semiconductor substrates in which the suspension and stability of abrasive material in the slurry is essentially stable. The slurry formulation is balanced to provide low residue of foreign material after polishing and due to its reduced ferric nitrate concentration will be less corrosive than prior art slurries. The recipe for the slurry includes 375 ml of a 9% wt alumina suspension, about 200 grams ferric nonahydrate, water to dilute to about 4.5 liters and enough 70% wt nitric acid to adjust the pH of the slurry to about 1.0 to 1.5.

    Abstract translation: 用于半导体衬底上的钨冶金的化学机械抛光的硝酸铁 - 氧化铝基浆料，其中研磨材料在浆料中的悬浮和稳定性基本上是稳定的。 浆料配方是平衡的，在抛光后提供低的异物残留，并且由于其降低的硝酸铁浓度将比现有技术的浆料腐蚀性更小。 该浆料的配方包括375ml的9％wt的氧化铝悬浮液，约200克的三水合九水合物，稀释至约4.5升的水和足够的70％重量的硝酸以将浆料的pH调节至约1.0至1.5。

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