公开(公告)号：US20240258074A1

公开(公告)日：2024-08-01

申请号：US18162876

申请日：2023-02-01

Applicant: Tokyo Electron Limited

Inventor： Chelsea DuBose ,  Barton Lane ,  Justin Moses ,  Merritt Funk ,  Mitsunori Ohata

IPC: H01J37/32

CPC classification number: H01J37/3222 ,  H01J2237/327

Abstract: According to an embodiment, a plasma processing system includes a plasma chamber, a planar antenna, a dielectric plate, and a plurality of magnets. The planar antenna is configured to generate plasma within the plasma chamber. The dielectric plate is disposed between the plasma chamber and the planar antenna. The magnets are arranged vertically above an outer surface of the dielectric plate that faces the plasma chamber.

公开(公告)号：US20240213005A1

公开(公告)日：2024-06-27

申请号：US18146253

申请日：2022-12-23

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Barton Lane ,  Yohei Yamazawa

IPC: H01J37/32 ,  H01P7/06

CPC classification number: H01J37/3299 ,  H01J37/32091 ,  H01J37/3211 ,  H01J37/32165 ,  H01P7/06 ,  H01J37/32743 ,  H01J2237/24564 ,  H01J2237/24585 ,  H01J2237/334

Abstract: An apparatus for plasma processing includes an RF power source and a set of resonating structures coupled to the RF power source. The resonating structures include a first region and a second region adjacent to the second region. The first region includes a first antenna and a first coupling circuit, the first coupling circuit being outside a coupling of the RF power source to the first region, where the first coupling circuit is configured to adjust a power distribution of the first region. The second region includes a second antenna.

公开(公告)号：US11410832B2

公开(公告)日：2022-08-09

申请号：US16913548

申请日：2020-06-26

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Yohei Yamazawa ,  Chelsea Dubose ,  Barton Lane

IPC: H01J37/32 ,  H01J37/244

Abstract: In accordance with an embodiment, a measurement system includes a sensor circuit configured to provide a voltage sense signal proportional to an electric field sensed by the RF sensor and a current sense signal proportional to a magnetic field sensed by the RF sensor; an analysis circuit comprising a frequency selective demodulator circuit configured to: demodulate the voltage sense signal into a first set of analog demodulated signals according to a set of demodulation frequencies, demodulate the current sense signal into a second set of analog demodulated signals according to the set of demodulation frequencies, and determine a phase shift between the voltage sense signal and the current sense signal for at least one frequency of the set of demodulation frequencies; and analog-to-digital converters configured to receive the first and second sets of analog demodulated signals.

公开(公告)号：US20220076923A1

公开(公告)日：2022-03-10

申请号：US17012168

申请日：2020-09-04

Applicant: Tokyo Electron Limited

Inventor： John Carroll ,  Jianping Zhao ,  Peter Ventzek ,  Barton Lane

IPC: H01J37/32 ,  H05H1/46

Abstract: A system includes a plasma chamber coupled to a power source, and an impedance matching network coupled between the power source and the plasma chamber, wherein the impedance matching network comprises an L-shaped network and a first adjustable inductor coupled between an input of the plasma chamber and ground, and wherein the impedance matching network is configured such that, in a predetermined frequency range, an impedance of the impedance matching network and the plasma chamber is substantially equal to an impedance of the power source.

公开(公告)号：US11201035B2

公开(公告)日：2021-12-14

申请号：US15971778

申请日：2018-05-04

Applicant: Tokyo Electron Limited

Inventor： Barton Lane ,  Peter Ventzek

IPC: H01J37/32 ,  H01L21/67

Abstract: Described herein are technologies related to a radical source with a housing that includes a plasma cavity that is designed to contain a plasma created by a plasma generator. The housing has at least one gas injector designed to inject process gas into the plasma. The plasma produces radicals from the gas injected into the plasma. The cavity has an exit or opening formed therein that ejects the radicals from the cavity. The ejected radicals may be directed towards a subject wafer substrate under the radical source. This Abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

公开(公告)号：US11043362B2

公开(公告)日：2021-06-22

申请号：US16572696

申请日：2019-09-17

Applicant: Tokyo Electron Limited

Inventor： Peter Ventzek ,  Barton Lane ,  Zhiying Chen ,  Alok Ranjan

IPC: H01J37/32 ,  H01J37/06

Abstract: A plasma processing apparatus includes a processing chamber, a substrate disposed in the processing chamber, and a plurality of electron sources configured to supply electrons to a plasma generated in the processing chamber. Each of the plurality of electron sources includes a first side facing the plasma in the processing chamber. Each of the plurality of electron sources also includes a resonant structure disposed at the first side and configured to be held at a negative direct current bias voltage.

公开(公告)号：US10991554B2

公开(公告)日：2021-04-27

申请号：US16138375

申请日：2018-09-21

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Peter L. G. Ventzek ,  Barton Lane

IPC: H01J37/32 ,  H01L21/67

Abstract: A system and method for using plasma to treat a substrate are described. The system includes a substrate holder disposed within a plasma processing system, and arranged to support a substrate, a first signal generator for coupling a first signal at a first frequency to plasma in the plasma processing system, and a second signal generator for coupling a second signal at a second frequency to plasma in the plasma processing system, wherein the second frequency being less than the first frequency. The system further includes an amplitude modulation circuit for modulating the first signal between a high amplitude state and a low amplitude state in response to an amplitude modulation signal, and a timing circuit configured to define the amplitude modulation signal that synchronizes the amplitude modulation of the first signal with a target phase for each cycle of the second signal.

公开(公告)号：US20190341226A1

公开(公告)日：2019-11-07

申请号：US15971778

申请日：2018-05-04

Applicant: Tokyo Electron Limited

Inventor： Barton Lane ,  Peter Ventzek

IPC: H01J37/32

Abstract: Described herein are technologies related to a radical source with a housing that includes a plasma cavity that is designed to contain a plasma created by a plasma generator. The housing has at least one gas injector designed to inject process gas into the plasma. The plasma produces radicals from the gas injected into the plasma. The cavity has an exit or opening formed therein that ejects the radicals from the cavity. The ejected radicals may be directed towards a subject wafer substrate under the radical source. This Abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

公开(公告)号：US12272520B2

公开(公告)日：2025-04-08

申请号：US16506202

申请日：2019-07-09

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Peter Ventzek ,  Alok Ranjan ,  Barton Lane ,  Justin Moses ,  Chelsea DuBose

IPC: H01J37/32 ,  C23C16/509 ,  H01L21/67 ,  H01L21/683

Abstract: In one exemplary embodiment described herein are innovative plasma processing methods and system that utilize direct measurement of direct current (DC) field or self-bias voltage (Vdc) in a plasma processing chamber. In one embodiment, a non-plasma contact measurement using the electric field effect from Vdc is provided. The Vdc sensing method may be robust to a variety of process conditions. In one embodiment, the sensor is integrated with any focus ring material (for example, quartz or doped-undoped silicon). Robust extraction of the Vdc measurement signal may be used for process control. In one embodiment, the sensor may be integrated, at least in part, with the substrate being processed in the chamber.

公开(公告)号：US12261017B2

公开(公告)日：2025-03-25

申请号：US17971394

申请日：2022-10-21

Applicant: Tokyo Electron Limited

Inventor： Barton Lane ,  Masaki Takagi

IPC: H01J37/32 ,  C23C14/35 ,  H01L21/02 ,  H01Q5/10

Abstract: Systems and methods provide a solution for efficiently generating high density plasma for a physical vapor deposition (PVD). The present solution includes a vacuum chamber for a PVD process. The system can include a target located within the vacuum chamber for sputtering a material onto a wafer. The system can include a resonant structure formed by an antenna and a plurality of capacitors. The resonant structure can be configured to provide a pulsed output at a resonant frequency. The resonant structure can be configured to generate, via the antenna and based on the pulsed output, a plasma between the target and a location of the wafer to ionize the material sputtered from the target.