公开(公告)号：US20170287778A1

公开(公告)日：2017-10-05

申请号：US15473489

申请日：2017-03-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro OKADA ,  Satoshi TAKAGI

IPC: H01L21/768 ,  C23C16/04 ,  C23C16/24 ,  H01L21/3213 ,  C23C16/455 ,  C23C16/44 ,  H01L21/3205 ,  C23C16/02 ,  C23C16/52

CPC classification number: H01L21/76882 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/45523 ,  C23C16/52 ,  H01L21/32055 ,  H01L21/32135 ,  H01L21/76802 ,  H01L21/76879

Abstract: A silicon film forming method of forming a silicon film in a recess with respect to a target substrate having on its surface an insulating film in which the recess is formed. The method includes (a) forming a first silicon film filling the recess by supplying a Silicon raw material gas onto the target substrate, (b) subsequently, etching the first silicon film by supplying a halogen-containing etching gas onto the target substrate such that surfaces of the insulating film on the target substrate and on an upper portion of an inner wall of the recess are exposed and such that the first silicon film remains in a bottom portion of the recess, and (c) subsequently, growing a second silicon film in a bottom-up growth manner on the first silicon film that remains in the recess by supplying a Silicon raw material gas onto the target substrate after the etching.

公开(公告)号：US20170243742A1

公开(公告)日：2017-08-24

申请号：US15436991

申请日：2017-02-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuya TAKAHASHI ,  Mitsuhiro OKADA ,  Katsuhiko KOMORI

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/455

CPC classification number: H01L21/02647 ,  C23C16/045 ,  C23C16/24 ,  C23C16/455 ,  C23C16/52 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636

Abstract: A method of forming a silicon film, a germanium film or a silicon germanium film on a target substrate having a fine recess formed on a surface of the target substrate by a chemical vapor deposition method includes placing the target substrate having the fine recess in a processing container, and supplying a film forming gas containing an element constituting a film to be formed and a chlorine-containing compound gas into the processing container. Adsorption of the film forming gas at an upper portion of the fine recess is selectively inhibited by the chlorine-containing compound gas.

公开(公告)号：US20150275356A1

公开(公告)日：2015-10-01

申请号：US14669952

申请日：2015-03-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro OKADA

IPC: C23C16/44 ,  C23C16/24 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/4405 ,  C23C16/24

Abstract: A method of cleaning an apparatus for forming an amorphous silicon film by removing an adhered material from an interior of the apparatus after the amorphous silicon film is formed on a workpiece through supply of a process gas into a reaction chamber of the apparatus includes: removing the adhered material from the interior of the apparatus by supplying the cleaning gas into the reaction chamber; and performing at least one purge process selected from a first purge process of supplying ammonia into the reaction chamber, from which the adhered material has been removed by supplying the cleaning gas into the reaction chamber, and a second purge process of supplying a gas containing hydrogen and oxygen into the reaction chamber, from which the adhered material has been removed by supplying the cleaning gas into the reaction chamber.

Abstract translation: 一种清洁用于形成非晶硅膜的装置的方法，其特征在于，在通过将工艺气体供给到所述装置的反应室中而在工件上形成所述非晶硅膜之后，从所述装置的内部除去附着材料，包括： 通过将清洁气体供应到反应室中，从设备内部粘附材料; 并且进行至少一个净化过程，所述清洗过程选自向反应室供应氨的第一吹扫过程，通过将清洁气体供应到反应室中已经除去了粘附的材料;以及第二吹扫工艺， 和氧气进入反应室，通过将清洁气体供应到反应室中，从而从中除去粘附的材料。

公开(公告)号：US20150270160A1

公开(公告)日：2015-09-24

申请号：US14657573

申请日：2015-03-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro OKADA

IPC: H01L21/762 ,  C23C16/455 ,  C23C16/40 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L21/76232 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3065

Abstract: A method of forming a silicon oxide film for burying the silicon oxide film in a trench formed on a surface of a target object includes forming a silicon film on the trench of the target object, etching the silicon film, oxidizing the silicon film subjected to the etching to form a first silicon oxide film, and forming a second silicon oxide film on the first silicon oxide film to cover the first silicon oxide film formed through the oxidizing the silicon film while the second silicon oxide film is buried in the trench of the target object.

Abstract translation: 在形成在目标物体的表面上的沟槽中形成用于将氧化硅膜埋入的氧化硅膜的方法包括在目标物体的沟槽上形成硅膜，蚀刻硅膜，氧化受到 蚀刻以形成第一氧化硅膜，并且在第一氧化硅膜上形成第二氧化硅膜以覆盖通过氧化硅膜而形成的第一氧化硅膜，而第二氧化硅膜被掩埋在靶的沟槽中 目的。

公开(公告)号：US20140283750A1

公开(公告)日：2014-09-25

申请号：US14221334

申请日：2014-03-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro OKADA ,  Kazuhide HASEBE

IPC: H01L21/683

CPC classification number: H01L21/6719 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/67303 ,  H01L21/67757

Abstract: A batch-type vertical substrate processing apparatus includes a processing chamber into which a substrate holder configured to stack and hold a plurality of target substrates in a height direction is inserted; and a plurality of flanges formed to protrude from an inner wall of the processing chamber toward an internal space of the processing chamber along a planar direction and configured to divide the interior of the processing chamber into a plurality of processing subspaces along the height direction, wherein the flanges include insertion holes through which the substrate holder is inserted, and diameters of the insertion holes are small at an upper side of the processing chamber and become gradually larger toward a lower side of the processing chamber.

Abstract translation: 分批式立式基板处理装置包括：处理室，其中构造成在高度方向上堆叠和保持多个目标基板的基板保持器插入其中; 以及多个凸缘，其形成为从所述处理室的内壁朝向所述处理室的内部空间沿着平面方向突出并且被配置为沿着所述高度方向将所述处理室的内部分成多个处理子空间，其中， 凸缘包括插入基板保持器的插入孔，并且插入孔的直径在处理室的上侧较小，并且朝向处理室的下侧逐渐变大。

公开(公告)号：US20210384071A1

公开(公告)日：2021-12-09

申请号：US17445436

申请日：2021-08-19

Applicant: Tokyo Electron Limited

Inventor： Kazuo KIBI ,  Shigetsugu FUJITA ,  Kenji SUZUKI ,  Mitsuhiro OKADA

IPC: H01L21/768 ,  H01L21/027

Abstract: A method of manufacturing a semiconductor device includes: planarizing a surface of a substrate having a conductive material embedded in a first hole so as to expose the conductive material embedded in the first hole, wherein the first hole is formed in a region which is on an insulating film laminated on the substrate and is surrounded by a spacer film; laminating a mask film on the surface of the substrate; forming a second hole in the mask film such that at least a portion of an upper surface of the conductive material embedded in the first hole is exposed; embedding the conductive material in the second hole; and removing the mask film.

公开(公告)号：US20190259599A1

公开(公告)日：2019-08-22

申请号：US16281418

申请日：2019-02-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki HAYASHI ,  Rui KANEMURA ,  Satoshi TAKAGI ,  Mitsuhiro OKADA

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/311

Abstract: There is provided a film forming method comprising an organic substance removal step of removing an organic substance adhering to an oxide film generated on a surface of a base by supplying a hydrogen-containing gas and an oxygen-containing gas to the base; an oxide film removal step of removing the oxide film formed on the surface of the base after the organic substance removal step; and a film forming step of forming a predetermined film on the surface of the base after the oxide film removal step.

公开(公告)号：US20160289833A1

公开(公告)日：2016-10-06

申请号：US15082442

申请日：2016-03-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro OKADA ,  Katsuhiko KOMORI

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/46 ,  C23C16/44 ,  C23C16/458

CPC classification number: C23C16/45578 ,  H01L21/67109

Abstract: A vertical heat treatment apparatus includes a plurality of gas supply pipes installed in one of left-right-half regions of a reaction vessel and configured to supply a process gas to division regions obtained by dividing a processing region; an exhaust opening formed in a wall of the reaction vessel in the other of the left-right-half regions; and a vacuum exhaust path in communication with the exhaust opening. The plurality of gas supply pipes are installed to extend from an inner wall portion of the reaction vessel at a position lower than the processing region. At least one of the gas supply pipes includes a bent portion formed by bending downward a leading end portion that is extended upward, and a plurality of gas discharge holes are formed at a downstream side from the bent portion.

Abstract translation: 立式热处理装置包括安装在反应容器的左右半部区域中的多个气体供给管，其构造成将处理气体供给到通过分割处理区域而得到的分割区域; 形成在左右半部区域中的另一方的反应容器的壁的排气口; 以及与排气口连通的真空排气路径。 多个气体供给管被安装成在比处理区域低的位置从反应容器的内壁部延伸。 气体供给管中的至少一个包括通过向下弯曲而向前弯曲而形成的弯曲部，并且在弯曲部的下游侧形成有多个排气孔。

公开(公告)号：US20150037975A1

公开(公告)日：2015-02-05

申请号：US14449744

申请日：2014-08-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Katsuhiko KOMORI ,  Mitsuhiro OKADA

IPC: H01L21/3205 ,  C23C16/56 ,  C23C16/24 ,  H01L21/3213 ,  H01L21/3215

CPC classification number: H01L21/32055 ,  C23C16/045 ,  C23C16/24 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/32135 ,  H01L21/32155 ,  H01L21/76877

Abstract: Provided is a method of forming a silicon film in a groove formed on a surface of an object to be processed, which includes: forming a first silicon layer on the surface of the object to be processed to embed the groove; doping impurities near a surface of the first silicon layer; forming a seed layer on the doped first silicon layer; and forming a second silicon layer containing impurities on the seed layer.

Abstract translation: 本发明提供一种在被处理物的表面上形成的沟槽中形成硅膜的方法，该方法包括：在待加工物体的表面上形成第一硅层以嵌入槽中; 在第一硅层的表面附近掺杂杂质; 在掺杂的第一硅层上形成晶种层; 以及在种子层上形成含有杂质的第二硅层。

公开(公告)号：US20150037970A1

公开(公告)日：2015-02-05

申请号：US14447060

申请日：2014-07-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide HASEBE ,  Kazuya TAKAHASHI ,  Katsuhiko KOMORI ,  Yoshikazu FURUSAWA ,  Mitsuhiro OKADA ,  Hiroyuki HAYASHI ,  Akinobu KAKIMOTO

IPC: H01L21/768 ,  H01L21/285

CPC classification number: C23C16/045 ,  C23C16/24 ,  H01L21/28556 ,  H01L21/32055 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: The present disclosure provides a silicon film forming method for forming a silicon film on a workpiece having a processed surface, including: forming a seed layer by supplying a high-order aminosilane-based gas containing two or more silicon atoms in a molecular formula onto the processed surface and by having silicon adsorbed onto the processed surface; and forming a silicon film by supplying a silane-based gas not containing an amino group onto the seed layer and by depositing silicon onto the seed layer, wherein, when forming a seed layer, a process temperature is set within a range of 350 degrees C. or lower and a room temperature or higher.

Abstract translation: 本公开内容提供了一种用于在具有加工表面的工件上形成硅膜的硅膜形成方法，包括：通过将分子式中含有两个或更多个硅原子的高级氨基硅烷系气体供给到 并且通过使硅吸附在处理过的表面上; 以及通过将不含有氨基的硅烷类气体供给到种子层上并通过在种子层上沉积硅而形成硅膜，其中，当形成种子层时，将处理温度设定在350℃的范围内 或更低，室温以上。