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公开(公告)号：US20050069815A1
公开(公告)日：2005-03-31
申请号：US10916414
申请日：2004-08-12
IPC分类号： B23K26/18 , B23K26/00 , B23K26/02 , B23K101/40 , G03F7/00 , H01L21/00 , H01L21/027 , H01L21/302 , H01L21/311 , H01L21/3205 , H01L21/3213 , H01L23/544
CPC分类号： H01L23/544 , H01L21/0275 , H01L21/0276 , H01L21/31144 , H01L21/32139 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A processing method comprises forming a water-soluble protective film on a first film having a processing area above a substrate irradiating processing light on the processing area selectively with to selectively remove the first film in the processing area and the protective film on the processing area, and removing the protective film with water after the selective irradiating.
摘要翻译： 一种处理方法包括在选择性地在处理区域上在基板上照射处理光的处理区域上的第一膜上形成水溶性保护膜，以选择性地去除处理区域中的第一膜和处理区域上的保护膜， 并在选择性照射后用水除去保护膜。
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22.发明授权Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device 失效基板处理方法，基板处理装置以及半导体装置的制造方法公开(公告)号：US07794923B2
公开(公告)日：2010-09-14
申请号：US11654565
申请日：2007-01-18
申请人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
发明人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
IPC分类号： G03F7/00
CPC分类号： G03F7/70341 , Y10S430/162
摘要： A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.
摘要翻译： 一种基板处理方法，包括在将待施加曝光处理的处理对象基板和用于进行曝光处理的曝光装置的投影光学系统之间提供液体之前，在将抗蚀剂膜提供在第一主面 为了进行曝光处理的一侧进行曝光处理而设置的液浸曝光处理对象基板，从第二图像的外围边缘部选择性地施加相对于规定范围的区域的至少疏水处理 主面与第一主面相对。
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23.发明申请公开(公告)号：US20080035851A1
公开(公告)日：2008-02-14
申请号：US11905977
申请日：2007-10-05
IPC分类号： G21K5/04
CPC分类号： H01L23/544 , B23K26/066 , B23K26/364 , B23K26/40 , B23K2103/172 , G03F7/2026 , G03F7/70341 , G03F9/7076 , G03F9/708 , G03F9/7084 , G21K5/10 , H01J2237/30438 , H01L2223/54453 , H01L2924/0002 , Y10S438/949 , H01L2924/00
摘要： A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.
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公开(公告)号：US07097960B2
公开(公告)日：2006-08-29
申请号：US10824482
申请日：2004-04-15
CPC分类号： H01L21/31133 , G03F7/3021 , G03F7/322 , G03F7/422 , G03F7/425
摘要： A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.
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公开(公告)号：US20060008746A1
公开(公告)日：2006-01-12
申请号：US11174720
申请日：2005-07-06
申请人： Yasunobu Onishi , Kenji Chiba , Daisuke Kawamura , Shinichi Ito , Koutaro Sho , Tomoyuki Takeishi
发明人： Yasunobu Onishi , Kenji Chiba , Daisuke Kawamura , Shinichi Ito , Koutaro Sho , Tomoyuki Takeishi
IPC分类号： G03F7/00
CPC分类号： G03F7/11 , G03F7/70341
摘要： The present application provides a method for manufacturing a semiconductor device, the method including forming a resist film on a substrate, forming a protective film on the resist film, exposing the resist film with a first liquid interposed between the protective film and a lens for exposure, removing the protective film using an oxidative second liquid after exposing the resist film, and developing the resist film to form a resist pattern after removing the protective film.
摘要翻译： 本申请提供了一种制造半导体器件的方法，该方法包括在衬底上形成抗蚀剂膜，在抗蚀剂膜上形成保护膜，用保护膜和用于曝光的透镜之间的第一液体暴露抗蚀剂膜 在曝光抗蚀剂膜之后使用氧化性第二液体除去保护膜，并且在除去保护膜之后使抗蚀剂膜显影以形成抗蚀剂图案。
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26.发明申请公开(公告)号：US20050130068A1
公开(公告)日：2005-06-16
申请号：US10992349
申请日：2004-11-19
IPC分类号： G03F7/40 , G03F7/00 , G03F7/20 , H01L21/00 , H01L21/027
摘要： A pattern forming method comprises forming a first resist pattern on a substrate, irradiating light on the first resist pattern, forming a resist film including a cross-linking material on the substrate and the first resist pattern, forming a second resist pattern including a cross-linking layer formed at an interface between the first resist pattern and the resist film by causing a cross-linking reaction at the interface, and irradiating light on the first resist pattern including setting an amount of the light irradiated on the first resist pattern such that a dimension of the second resist pattern is to be a predetermined dimension based on a previously prepared relationship between a difference between a dimension relating to the first resist pattern and a dimension relating to the second resist pattern and the amount of the light irradiated on the first resist pattern.
摘要翻译： 图案形成方法包括在基板上形成第一抗蚀剂图案，在第一抗蚀剂图案上照射光，在基板上形成包含交联材料的抗蚀剂膜和第一抗蚀剂图案，形成第二抗蚀剂图案， 通过在界面处引起交联反应而在第一抗蚀剂图案和抗蚀剂膜之间的界面处形成的连接层，并且对第一抗蚀剂图案照射光，包括设定照射在第一抗蚀剂图案上的光量，使得 基于与第一抗蚀剂图案有关的尺寸与第二抗蚀剂图案的尺寸之间的差异以及照射在第一抗蚀剂层上的光量，第二抗蚀剂图案的尺寸为预定尺寸 模式。
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27.发明申请Alkaline solution and manufacturing method, and alkaline solution applied to patern forming method, resist film removing method, solution application method, substrate treatment method, solotion supply method, and semiconductor device manufacturing method 失效碱溶液及制造方法，碱性溶液应用于成型方法，抗蚀膜除去方法，溶液施加方法，基板处理方法，浸渍供给方法和半导体器件制造方法公开(公告)号：US20050058944A1
公开(公告)日：2005-03-17
申请号：US10824482
申请日：2004-04-15
IPC分类号： B01J19/00 , B05C5/02 , B05C11/10 , B05D1/26 , B05D3/00 , B05D3/10 , B05D7/00 , B05D7/24 , C02F1/68 , C09K3/00 , G03F7/30 , G03F7/32 , G03F7/42 , H01L21/027 , H01L21/311 , G03C5/00
CPC分类号： H01L21/31133 , G03F7/3021 , G03F7/322 , G03F7/422 , G03F7/425
摘要： A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.
摘要翻译： 一种碱性溶液的制造方法，包括将具有氧化性质或还原性的气态分子溶解在碱性水溶液中。
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公开(公告)号：US08084194B2
公开(公告)日：2011-12-27
申请号：US11675869
申请日：2007-02-16
申请人： Tomoyuki Takeishi , Yuji Kobayashi
发明人： Tomoyuki Takeishi , Yuji Kobayashi
CPC分类号： H01L21/67051 , G03F7/2028 , G03F7/3021 , H01L21/6715
摘要： A method of substrate edge treatment includes forming a processing target film on a treatment target substrate, applying an energy line to a predetermined position on the processing target film to form a latent image on the processing target film, heating the treatment target substrate in which the latent image is formed on the processing target film, developing the processing target film after the heating, inspecting whether a residue is present at an edge of the treatment target substrate after the developing, and cleaning an end of the treatment target substrate to remove the residue at the edge of the treatment target substrate determined to be defective in the inspecting.
摘要翻译： 一种基板边缘处理方法，包括：在处理对象基板上形成处理对象膜，向处理对象膜上的预定位置施加能量线，在所述处理对象膜上形成潜像，对所述处理对象基板进行加热， 在加工对象膜上形成潜像，在加热后显影加工对象膜，检查在显影后是否存在处理对象基板的边缘残留物，清洗处理对象基板的末端以除去残留物 在处理对象基材的边缘被确定为检查中有缺陷。
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公开(公告)号：US20070196566A1
公开(公告)日：2007-08-23
申请号：US11675869
申请日：2007-02-16
申请人： Tomoyuki Takeishi , Yuji Kobayashi
发明人： Tomoyuki Takeishi , Yuji Kobayashi
IPC分类号： B41M5/00
CPC分类号： H01L21/67051 , G03F7/2028 , G03F7/3021 , H01L21/6715
摘要： A method of substrate edge treatment includes forming a processing target film on a treatment target substrate, applying an energy line to a predetermined position on the processing target film to form a latent image on the processing target film, heating the treatment target substrate in which the latent image is formed on the processing target film, developing the processing target film after the heating, inspecting whether a residue is present at an edge of the treatment target substrate after the developing, and cleaning an end of the treatment target substrate to remove the residue at the edge of the treatment target substrate determined to be defective in the inspecting.
摘要翻译： 一种基板边缘处理方法，包括：在处理对象基板上形成处理对象膜，向处理对象膜上的预定位置施加能量线，在所述处理对象膜上形成潜像，对所述处理对象基板进行加热， 在加工对象膜上形成潜像，在加热后显影加工对象膜，检查在显影后是否存在处理对象基板的边缘残留物，清洗处理对象基板的末端以除去残留物 在处理对象基材的边缘被确定为检查中有缺陷。
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