公开(公告)号：US4532549A

公开(公告)日：1985-07-30

申请号：US473865

申请日：1983-03-10

申请人： Toshifumi Ozaki ,  Shinya Ohba ,  Iwao Takemoto ,  Masaaki Nakai ,  Haruhisa Ando ,  Shusaku Nagahara ,  Takuya Imaide ,  Kenji Takahashi ,  Toshiyuki Akiyama

发明人： Toshifumi Ozaki ,  Shinya Ohba ,  Iwao Takemoto ,  Masaaki Nakai ,  Haruhisa Ando ,  Shusaku Nagahara ,  Takuya Imaide ,  Kenji Takahashi ,  Toshiyuki Akiyama

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/365 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H04N5/378 ,  H04N5/30

CPC分类号： H01L27/14643

摘要： Disclosed is a solid-state imaging device wherein optical information of a number of photo-electric conversion elements arranged in a matrix is read into vertical signal lines by a vertical shift register and then the optical information on the vertical signal lines is horizontally scanned by a horizontal register of a charge transfer device. Bias charge storage means and quasi-signal sweep-out drains are disposed between the horizontal register and the vertical signal lines, and a bias charge input means is arranged in the horizontal register. In order to ensure high efficiency in transferring signals between the vertical lines to the storage means, the sweep-out drains and the charge transfer device, it is arranged for bias charges to be provided at each stage of transfer. Thus, bias charges supplied from the storage means are used to transfer charges from the vertical lines to the storage means. Similarly bias charges directly injected from the quasi-signal sweep-out drains are used to sweep out quasi-signals from the storage means to the quasi-signal sweep-out drains. Finally bias charges supplied from the bias charge input means of the charge transfer device are used to read signals from the storage means into the charge transfer device. By virtue of this, the sweep-out efficiency of the quasi-signals from the capacitances which supply the bias charges and a read-out efficiency of the signal charges are enhanced and a high quality of video signal is produced.

摘要翻译： 公开了一种固态成像装置，其中以矩阵形式布置的多个光电转换元件的光学信息被垂直移位寄存器读入垂直信号线，然后垂直信号线上的光信息被水平扫描 电荷转移装置的水平寄存器。 偏置电荷存储装置和准信号扫除漏极设置在水平寄存器和垂直信号线之间，偏置电荷输入装置布置在水平寄存器中。 为了确保在垂直线之间向存储装置，扫除漏极和电荷转移装置传输信号的高效率，布置为在每个转移阶段提供偏置电荷。 因此，使用从存储装置提供的偏置电荷将电荷从垂直线传送到存储装置。 类似地，从准信号扫除漏极直接注入的偏置电荷用于将准信号从存储装置扫除到准信号扫除漏极。 最后，从电荷转移装置的偏置电荷输入装置提供的偏置电荷用于从存储装置读取信号到电荷转移装置中。 由此，来自提供偏置电荷的电容的准信号的扫除效率和信号电荷的读出效率被增强，并且产生高质量的视频信号。

公开(公告)号：US4443818A

公开(公告)日：1984-04-17

申请号：US329609

申请日：1981-12-10

申请人： Shinya Ohba ,  Masaaki Nakai ,  Toshifumi Ozaki ,  Kenji Takahashi

发明人： Shinya Ohba ,  Masaaki Nakai ,  Toshifumi Ozaki ,  Kenji Takahashi

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/369 ,  H04N5/372 ,  H04N3/14 ,  G11C7/06

CPC分类号： H04N3/1512 ,  H01L27/14643 ,  H04N3/1568

摘要： A solid-state imaging device comprises an array of picture elements and a horizontal CTD shift register. In a horizontal blanking period, two or more sets of signals from vertical signal output lines coupled to the picture element array are stored in the horizontal CTD shift register. In a horizontal scanning period, the horizontal CTD shift register operates in a 3-phase (or 4-phase) driving fashion to deliver picture image information signal to its output part.

摘要翻译： 固态成像装置包括像素阵列和水平CTD移位寄存器。 在水平消隐期间，耦合到像素阵列的垂直信号输出线的两组或更多组信号存储在水平CTD移位寄存器中。 在水平扫描周期中，水平CTD移位寄存器以三相（或四相）驱动方式工作，以将图像信息信号传送到其输出部分。

公开(公告)号：US09186433B2

公开(公告)日：2015-11-17

申请号：US13580573

申请日：2011-02-22

申请人： Yasuhiro Yoshida ,  Masato Tanaka ,  Kazuomi Suzuki ,  Toshifumi Ozaki ,  Tomohiro Takahata ,  Masao Irie ,  Mariko Nakamura ,  Mitsunobu Kawashima ,  Yamato Nojiri ,  Koichi Okada ,  Masahiro Nagao

发明人： Yasuhiro Yoshida ,  Masato Tanaka ,  Kazuomi Suzuki ,  Toshifumi Ozaki ,  Tomohiro Takahata ,  Masao Irie ,  Mariko Nakamura ,  Mitsunobu Kawashima ,  Yamato Nojiri ,  Koichi Okada ,  Masahiro Nagao

IPC分类号： A61K47/36 ,  A61K35/12 ,  A61K6/097 ,  A61K31/519 ,  A61K38/12 ,  A61P19/00 ,  A61P35/00 ,  A61L26/00 ,  A61K6/00 ,  A61L27/00

CPC分类号： A61L24/08 ,  A61K6/0023 ,  A61L24/02 ,  A61L26/00 ,  A61L27/00 ,  A61L2430/02 ,  C08L5/00

摘要： A kit for bonding to biological hard tissues, containing a phosphorylated polysaccharide, a polyvalent metal salt other than phosphates, and a solvent. The adhesive composition for biological hard tissues provided by the kit for bonding to biological hard tissues is suitably used in for medical uses, such as cement for bones or dental cement. In addition, since the adhesive composition has excellent bio-absorbability, it is useful as fusion materials for artificial joint prosthesis, fusion materials for spine fracture, fusion materials for extremity fracture, filling materials for bone tumors in the region of orthopedics, filling materials and restorative materials at dental caries-defective sites, luting materials for prosthetic restorative materials such as inlay and crown, pulp-capping and lining materials, implant surface treatment materials, periodontal disease therapeutic materials, hyperesthesia preventive materials, dental pulp capping materials, substrates for DDS, substrates for systems engineering, and tissue bonding materials in the dental region.

摘要翻译： 用于结合生物硬组织，包含磷酸化多糖，磷酸盐以外的多价金属盐和溶剂的试剂盒。 用于粘合生物硬组织的试剂盒提供的用于生物硬组织的粘合剂组合物适合用于医疗用途，例如骨水泥或牙科粘固剂。 此外，由于粘合剂组合物具有优异的生物吸收性，因此可用作人造关节假体的融合材料，用于脊柱骨折的融合材料，用于肢体骨折的融合材料，骨科区域的骨肿瘤填充材料，填充材料和 龋齿缺陷部位的修复材料，假体修复材料如镶嵌和牙冠，纸浆覆盖和衬里材料，植入物表面处理材料，牙周病治疗材料，感觉预防材料，牙髓封口材料，DDS基材 ，用于系统工程的基底和牙科区域中的组织粘合材料。

公开(公告)号：US07221086B2

公开(公告)日：2007-05-22

申请号：US10664966

申请日：2003-09-22

申请人： Tomoki Nakamura ,  Yuuichi Kijima ,  Yoshiyuki Kaneko ,  Toshifumi Ozaki ,  Shigemi Hirasawa

发明人： Tomoki Nakamura ,  Yuuichi Kijima ,  Yoshiyuki Kaneko ,  Toshifumi Ozaki ,  Shigemi Hirasawa

IPC分类号： H01J19/42 ,  H01J19/24

CPC分类号： H01J29/06 ,  H01J29/467 ,  H01J31/127

摘要： To provide a display device having the long lifetime and the high reliability by preventing the generation of a spark or a dark current between terminals of cathode lines and an anode, a shielding member is arranged between the terminals of the cathode lines and the anode so as to ensure shielding between the terminals and the anode.

摘要翻译： 为了通过防止阴极线和阳极的端子之间产生火花或暗电流来提供具有长寿命和高可靠性的显示装置，在阴极线和阳极的端子之间设置屏蔽部件，以便 以确保端子和阳极之间的屏蔽。

公开(公告)号：US07190107B2

公开(公告)日：2007-03-13

申请号：US10660720

申请日：2003-09-12

申请人： Susumu Sasaki ,  Yoshiyuki Kaneko ,  Toshifumi Ozaki ,  Shigemi Hirasawa ,  Yuuichi Kijima ,  Tomoki Nakamura

发明人： Susumu Sasaki ,  Yoshiyuki Kaneko ,  Toshifumi Ozaki ,  Shigemi Hirasawa ,  Yuuichi Kijima ,  Tomoki Nakamura

IPC分类号： H01J1/304 ,  H01J1/30 ,  H01J1/48 ,  H01J1/00

CPC分类号： B82Y10/00 ,  H01J9/022 ,  H01J29/467 ,  H01J29/481 ,  H01J2201/30469

摘要： A field emission type display device has a structure in which each pixel is constituted of a combination of a plurality of small apertures and a plurality of small electron sources. Due to such a constitution, it is possible to reduce undesired impact of electrons on control electrodes and the enhancement of the heat resistance of the carbon nanotubes of electron sources, whereby it is possible to obtain a display device of high quality and long lifetime, while exhibiting a high-performance electron emission characteristic. Boron (B) is adhered to carbon nanotubes, which constitute electron sources, through the small apertures of the control electrodes; and, hence, the alignment of the small apertures and the small electron sources is ensured and the area of the electron source is set to be equal to or less than the area of the aperture.

摘要翻译： 场发射型显示装置具有其中每个像素由多个小孔和多个小电子源的组合构成的结构。 由于这样的结构，可以减少电子对控制电极的不期望的影响，提高电子源的碳纳米管的耐热性，从而可以获得质量好，寿命长的显示装置，同时 具有高性能的电子发射特性。 硼（B）通过控制电极的小孔附着在构成电子源的碳纳米管上; 因此，确保小孔和小电子源的对准，并且将电子源的面积设定为等于或小于孔的面积。

公开(公告)号：US20050062694A1

公开(公告)日：2005-03-24

申请号：US10931120

申请日：2004-09-01

申请人： Tomoki Nakamura ,  Yoshiyuki Kaneko ,  Toshifumi Ozaki

发明人： Tomoki Nakamura ,  Yoshiyuki Kaneko ,  Toshifumi Ozaki

IPC分类号： H01J29/08 ,  G05F1/00 ,  G09G3/20 ,  G09G3/22 ,  H01J31/12

CPC分类号： H01J29/085 ,  G09G3/22 ,  G09G2320/04 ,  G09G2320/043 ,  H01J31/127

摘要： To detect a dark current when an abnormal discharge occurs between an anode and respective electrodes, on an inner surface of a front substrate, a dark current detection electrode is formed in a state that the dark current detection electrode is positioned adjacent to the outside of a screen display region on which an anode is formed and on a plane substantially equal to a plane on which the anode is formed. Then, between an electrode terminal of the dark current detection electrode and a ground, an ammeter which detects the flow of a dark current and a DC power source having a preset voltage value which is more or less lower than a high voltage supplied to the anode are connected in series.

摘要翻译： 为了在阳极和各个电极之间发生异常放电时检测暗电流，在前基板的内表面上，在暗电流检测电极位于邻近于外部的状态下形成暗电流检测电极 在其上形成有阳极的屏幕显示区域和基本上等于形成有阳极的平面的平面上。 然后，在暗电流检测电极的电极端子与地之间，检测暗电流的电流的电流表以及具有比供给阳极的高电压低的电压值的直流电源 串联连接。

公开(公告)号：US5063581A

公开(公告)日：1991-11-05

申请号：US557699

申请日：1990-07-25

申请人： Hajime Akimoto ,  Toshifumi Ozaki ,  Kazuya Tokumasu ,  Hideyuki Ono ,  Haruhiko Tanaka

发明人： Hajime Akimoto ,  Toshifumi Ozaki ,  Kazuya Tokumasu ,  Hideyuki Ono ,  Haruhiko Tanaka

IPC分类号： H01L21/339 ,  H01L27/148 ,  H01L29/762 ,  H04N5/335 ,  H04N5/361 ,  H04N5/369 ,  H04N5/3728

CPC分类号： H01L27/14831

摘要： The semiconductor device having both vertically arranged CCDs and a horizontal CCD, such as, in connection with a solid state image pickup device, is provided with a horizontal CCD in which the transfer speed and the transfer efficiency of a horizontal CCD thereof is improved substantially. In such a device, a plurality of photodiodes are provided on a semiconductor substrate, vertical CCDs are provided on the semiconductor substrate for transferring signal charges of the photodiodes and a horizontal CCD is provided on the semiconductor substrate for transferring signal charges received from the vertical CCDs. The vertical and horizontal CCDs of such a semiconductor device are formed in a well structure provided on the substrate such that the depletion region extending from the channel of the horizontal CCD and a depletion region produced between the underlying substrate and the well are configured to meet each other under each of the transfer electrodes of the horizontal CCD. The depletion region extending from a channel of the vertical CCDs and the depletion region produced between the underlying substrate and the well, however, do not meet each other under each of the transfer electrodes thereof.

摘要翻译： 具有垂直配置的CCD和水平CCD的半导体器件（例如与固态图像拾取器件相关联）设置有水平CCD，其中水平CCD的传输速度和传输效率基本上得到改善。 在这种器件中，在半导体衬底上设置多个光电二极管，在半导体衬底上设置垂直CCD以转移光电二极管的信号电荷，并且在半导体衬底上设置水平CCD以传送从垂直CCDs接收的信号电荷 。 这样的半导体器件的垂直和水平CCD形成在设置在衬底上的阱结构中，使得从水平CCD的沟道延伸的耗尽区域和在下面的衬底和阱之间产生的耗尽区被配置为满足每个 在水平CCD的每个转移电极下方。 然而，从垂直CCD的通道延伸的耗尽区域和在下面的衬底和阱之间产生的耗尽区域在其每个转移电极之间不相互满足。

公开(公告)号：US4942474A

公开(公告)日：1990-07-17

申请号：US281220

申请日：1988-12-08

申请人： Hajime Akimoto ,  Shinya Ohba ,  Toshifumi Ozaki

发明人： Hajime Akimoto ,  Shinya Ohba ,  Toshifumi Ozaki

IPC分类号： H04N5/3745

CPC分类号： H04N3/1512

摘要： A solid-state imaging device including a plurality of photoelectric conversion elements (for example, photodiodes) arranged on a semiconductor substrate so as to form a matrix and read-out means for reading out signal charges which are stored in the photodiodes in accordance with incident light, in a predetermined order, is disclosed in which device the read-out means is made up of a plurality of active elements such as a MOS transistor connected to a photodiode, part of the active elements are used as a pixel amplifier for amplifying the signal charge of the photodiode in such a manner that the signal charge is converted into a current or voltage, the output of the pixel amplifier at a time the signal charge of the photodiode is not applied to the input part of the pixel amplifier and the output of the pixel amplifier at a time the signal charge of the photodiode is applied to the input part of the pixel amplifier are separately stored in a pair of storage means, and the outputs of a plurality of pairs of storage means are successively taken out in accordance with a scanning signal.

摘要翻译： 一种固态成像装置，其包括布置在半导体衬底上的多个光电转换元件（例如，光电二极管），以形成矩阵和读出装置，用于根据事件读出存储在光电二极管中的信号电荷 公开了以预定顺序的光，读出装置由多个有源元件（例如连接到光电二极管的MOS晶体管）构成，其中有源元件的一部分用作像素放大器，用于放大 光电二极管的信号电荷使得信号电荷被转换为电流或电压，在光电二极管的信号电荷未被施加到像素放大器的输入部分的时间处的像素放大器的输出和输出 在光电二极管的信号电荷施加到像素放大器的输入部分的时间分别存储在一对存储装置中，并且输出的像素放大器的输出 根据扫描信号依次取出多对存储装置。

公开(公告)号：US4903122A

公开(公告)日：1990-02-20

申请号：US142919

申请日：1988-01-12

申请人： Toshifumi Ozaki ,  Naoki Ozawa ,  Shinya Ohba ,  Itaru Mimura

发明人： Toshifumi Ozaki ,  Naoki Ozawa ,  Shinya Ohba ,  Itaru Mimura

IPC分类号： H04N9/04

CPC分类号： H04N9/045

摘要： A high resolution solid-state color imaging apparatus having two-dimensionally disposed photoelectric sensors are arranged in rows and columns each having a color spectral responsivity characteristic such as by employing color filters. Each of the photoelectric sensors is scanned so as to obtain an intensity signal with respect to each row of each field, and wherein scanning of each field is for the same number of rows as that of each frame. Intensity signals are obtained only by the scanned output of each row. Additional intensity signals equal to half the number of said first mentioned intensity signals are obtained by a 2:1 subsampling of bandwidth-restricted signals by a filter along the vertical temporal frequency, thereby realizing high vertical resolution by the photoelectric image sensors of conventional row numbers and having compatibility with a conventional NTSC system and, furthermore, eliminating aliasing distortion.

摘要翻译： 具有二维设置的光电传感器的高分辨率固体彩色成像装置以各种具有色谱响应特性的行和列布置，例如通过使用滤色器。 每个光电传感器被扫描以获得相对于每个场的每一行的强度信号，并且其中每个场的扫描是与每个帧相同数量的行。 强度信号仅通过每行的扫描输出获得。 通过沿着垂直时间频率的滤波器对带宽限制信号进行2:1的子采样来获得等于所述第一提到的强度信号数量的一半的附加强度信号，从而通过常规行号的光电图像传感器实现高垂直分辨率 并且具有与常规NTSC系统的兼容性，并且还消除了混叠失真。

公开(公告)号：US4814848A

公开(公告)日：1989-03-21

申请号：US58825

申请日：1987-06-05

申请人： Hajime Akimoto ,  Harushisa Ando ,  Toshifumi Ozaki ,  Hideyuki Ono ,  Shinya Ohba ,  Masaaki Nakai ,  Norio Koike

发明人： Hajime Akimoto ,  Harushisa Ando ,  Toshifumi Ozaki ,  Hideyuki Ono ,  Shinya Ohba ,  Masaaki Nakai ,  Norio Koike

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L29/78 ,  H01L27/14 ,  H01L29/06

CPC分类号： H01L27/14887

摘要： A solid-state imaging device having a plurality of semiconductor layers of a first conductivity type for photo-electric conversion provided on the surface of a first semiconductor layer of a second conductivity type which is formed on a part of one surface of a semiconductor substrate of the first conductivity type, a semiconductor layer of the first conductivity type for charge transfer provided on the surface of a second semiconductor layer of the second conductivity type which is formed on a part of the surface of the substrate, and a signal output means. The first semiconductor layer of the second conductivity type and the second semiconductor layer of the second conductivity type are formed in different steps so that the first semiconductor layer is disposed deeper than the second semiconductor layer.

摘要翻译： 一种具有多个第一导电类型的用于光电转换的半导体层的固态成像装置，其设置在第二导电类型的第一半导体层的表面上，该第二半导体层形成在半导体衬底的一个表面的一部分上 第一导电型，形成在基板表面的一部分上的第二导电类型的第二半导体层的表面上的用于电荷转移的第一导电类型的半导体层和信号输出装置。 第二导电类型的第一半导体层和第二导电类型的第二半导体层以不同的步骤形成，使得第一半导体层被设置为比第二半导体层更深。