公开(公告)号：US20070197048A1

公开(公告)日：2007-08-23

申请号：US11785606

申请日：2007-04-19

申请人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

发明人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

IPC分类号： H01L21/31

CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02329 ,  H01L21/3145

摘要： According to the present invention, there is provided a semiconductor device comprising: a gate insulating film selectively formed on a predetermined region of a semiconductor substrate; a gate electrode formed on said gate insulating film; and a source region and drain region formed, in a surface portion of said semiconductor substrate, on two sides of a channel region positioned below said gate electrode, wherein a carbon concentration in an interface where said gate insulating film is in contact with said gate electrode is not more than 5×1022 atoms/cm3.

摘要翻译： 根据本发明，提供了一种半导体器件，包括：选择性地形成在半导体衬底的预定区域上的栅极绝缘膜; 形成在所述栅极绝缘膜上的栅电极; 以及在所述半导体衬底的表面部分中形成在位于所述栅极电极下方的沟道区域的两侧上的源极区和漏极区，其中所述栅极绝缘膜与所述栅电极接触的界面中的碳浓度 不大于5×10 22个原子/ cm 3。

公开(公告)号：US07242363B2

公开(公告)日：2007-07-10

申请号：US10819259

申请日：2004-04-07

申请人： Munenori Fujimura ,  Shuichiro Yamaguchi ,  Hiromi Tokunaga ,  Kazuhiro Eguchi

发明人： Munenori Fujimura ,  Shuichiro Yamaguchi ,  Hiromi Tokunaga ,  Kazuhiro Eguchi

IPC分类号： H01Q1/36 ,  H01Q21/00

CPC分类号： G06F1/1698 ,  G06F1/1616 ,  G06F1/1626 ,  H01Q1/2258 ,  H01Q1/2266 ,  H01Q1/243 ,  H01Q1/362 ,  H01Q1/40 ,  H01Q3/06 ,  H01Q3/2623 ,  H01Q9/16 ,  H01Q9/28 ,  H01Q9/46 ,  H01Q11/08 ,  H01Q13/10 ,  H01Q21/29

摘要： An antenna element, an antenna module, and an electronic equipment using these, are small-sized, high in transmitting and receiving performance, and capable of transmitting and receiving electric waves at a plurality of frequencies. The antenna element includes two antennas having at least a feeder portion and an open portion, and current is fed to each feeder portion. The antenna module includes at least an antenna and a mounting body in which the antenna is mounted, and current is fed to each feeder portion. The electronic equipment includes at least the antenna element or antenna module, a signal modulator, a signal demodulator, a controller, a man-machine interface, and a casing.

摘要翻译： 使用这些的天线元件，天线模块和电子设备是小型的，高的发送和接收性能，并且能够以多个频率发送和接收电波。 天线元件包括至少具有馈电部分和开放部分的两个天线，并且电流馈送到每个馈送部分。 天线模块至少包括天线和天线安装在其中的安装体，并且电流被馈送到每个馈送部分。 电子设备至少包括天线元件或天线模块，信号调制器，信号解调器，控制器，人机界面和外壳。

公开(公告)号：US07101775B2

公开(公告)日：2006-09-05

申请号：US10911516

申请日：2004-08-05

申请人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

发明人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

IPC分类号： H01L21/3205

CPC分类号： H01L29/511 ,  C23C16/30 ,  C23C16/45523 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28229 ,  H01L21/31604 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.

公开(公告)号：US20050158932A1

公开(公告)日：2005-07-21

申请号：US10995296

申请日：2004-11-24

申请人： Seiji Inumiya ,  Akio Kaneko ,  Motoyuki Sato ,  Katsuyuki Sekine ,  Kazuhiro Eguchi ,  Yoshitaka Tsunashima

发明人： Seiji Inumiya ,  Akio Kaneko ,  Motoyuki Sato ,  Katsuyuki Sekine ,  Kazuhiro Eguchi ,  Yoshitaka Tsunashima

IPC分类号： H01L29/423 ,  H01L21/316 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L21/31 ,  H01L21/8234

CPC分类号： H01L29/6656 ,  H01L21/28202 ,  H01L21/823828 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/518

摘要： A method of manufacturing a semiconductor device, comprises: providing a gate insulation layer of a high dielectric constant containing a metal element on a surface of a semiconductor substrate, part of which becoming a channel; providing a first conductive layer containing a silicon element on the surface of said gate insulation layer, said first conductive layer being a gate electrode; and introducing nitrogen or oxygen onto an interface between said gate insulation layer and said first conductive layer by executing a thermal treatment upon said semiconductor substrate in a atmosphere containing a nitriding agent or an oxidizing agent.

摘要翻译： 一种制造半导体器件的方法，包括：在半导体衬底的表面上提供包含金属元素的高介电常数的栅极绝缘层，其中一部分变成沟道; 在所述栅极绝缘层的表面上提供含有硅元素的第一导电层，所述第一导电层是栅电极; 以及通过在包含氮化剂或氧化剂的气氛中对所述半导体衬底进行热处理，将氮或氧引入到所述栅极绝缘层和所述第一导电层之间的界面上。

公开(公告)号：US06844234B2

公开(公告)日：2005-01-18

申请号：US10101913

申请日：2002-03-21

申请人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

发明人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

IPC分类号： H01L21/31 ,  C23C16/30 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L21/3205

CPC分类号： H01L29/511 ,  C23C16/30 ,  C23C16/45523 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28229 ,  H01L21/31604 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.

摘要翻译： 一种半导体器件，包括半导体衬底，形成在所述半导体衬底上并包括含有金属元素的氧化硅膜的栅极电介质，所述氧化硅膜含有所述金属元素，所述金属元素包括在其下表面附近的第一区域， 上表面和第一和第二区域之间的第三区域，包含在氧化硅膜中的金属元素在氧化硅膜的厚度方向上具有密度分布，存在于第三区域中的密度分布的峰值， 以及形成在栅极电介质上的电极。

公开(公告)号：US20050006674A1

公开(公告)日：2005-01-13

申请号：US10911516

申请日：2004-08-05

申请人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

发明人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

IPC分类号： H01L21/31 ,  C23C16/30 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L21/336 ,  H01L29/76 ,  H01L31/062 ,  B05D1/36 ,  B05D7/00

CPC分类号： H01L29/511 ,  C23C16/30 ,  C23C16/45523 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28229 ,  H01L21/31604 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.

公开(公告)号：US06541813B1

公开(公告)日：2003-04-01

申请号：US09650746

申请日：2000-08-30

申请人： Shoko Niwa ,  Hiroshi Tomita ,  Kazuhiro Eguchi ,  Katsuhiko Hieda

发明人： Shoko Niwa ,  Hiroshi Tomita ,  Kazuhiro Eguchi ,  Katsuhiko Hieda

IPC分类号： H01L2976

CPC分类号： H01L21/31691 ,  H01L28/55

摘要： The capacitor related to the present invention has a lower electrode, a dielectric film provided on the lower electrode and made mainly of crystal containing at Ti, O and at least one element selected from the group consisting of Ba and Sr, and an upper electrode provided on the dielectric film, wherein the dielectric film includes a layer which contacts the upper electrode. In case the dielectric film which has a thickness of at least 5 nm and exhibits a first-order differential spectrum measured by means of Auger electron spectroscopy, and the in the first-order differential spectrum, a ratio A/B is at most 0.3, where A is the absolute value A of a difference between a third peak appearing near 420 eV and a fourth peak appearing at a higher energy level and near the third peak, and B is the absolute value B of a difference between a first peak appearing near 410 eV and a third peak appearing at a lower energy level and near the first level.

摘要翻译： 与本发明有关的电容器具有下电极，在下电极上设置的电介质膜，主要由含有Ti，O的晶体和从Ba和Sr组成的组中选出的至少一种元素制成，上电极 在电介质膜上，其中电介质膜包括与上电极接触的层。 在通过俄歇电子能谱法测量的具有至少5nm的厚度并显示一阶微分光谱的电介质膜和一阶微分光谱中，A / B比至多为0.3时， 其中A是在420eV附近出现的第三峰与出现在较高能级和接近第三峰的第四峰之间的差的绝对值A，B是出现在附近的第一峰之间的差的绝对值B 410 eV和第三个峰出现在较低的能级和接近第一级。

公开(公告)号：US06188493B1

公开(公告)日：2001-02-13

申请号：US09058242

申请日：1998-04-10

申请人： Takahiro Esaki ,  Kazuhiro Eguchi ,  Takeshi Nakayama

发明人： Takahiro Esaki ,  Kazuhiro Eguchi ,  Takeshi Nakayama

IPC分类号： H04N146

CPC分类号： H04N1/46

摘要： An electronic blackboard device capable of performing color printing. Data read by an image sensor is converted to digital data by an A/D converter and provided via a shading correcting circuit and a converter to a printer control circuit, which causes a color printer to print the appropriate data in a color corresponding to a marker.

摘要翻译： 能够进行彩色打印的电子黑板装置。 由图像传感器读取的数据由A / D转换器转换成数字数据，经由阴影校正电路和转换器提供给打印机控制电路，使得彩色打印机以对应于标记的颜色打印适当的数据 。

公开(公告)号：US5739563A

公开(公告)日：1998-04-14

申请号：US559945

申请日：1995-11-17

申请人： Takashi Kawakubo ,  Kenya Sano ,  Kazuhide Abe ,  Shuichi Komatsu ,  Noburu Fukushima ,  Kazuhiro Eguchi

发明人： Takashi Kawakubo ,  Kenya Sano ,  Kazuhide Abe ,  Shuichi Komatsu ,  Noburu Fukushima ,  Kazuhiro Eguchi

IPC分类号： H01L21/02 ,  H01L21/8246 ,  H01L27/115 ,  H01L29/94 ,  H01L27/108

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A semiconductor memory device comprising a silicon substrate, a plurality of switching transistors formed on the silicon substrate, an insulating layer having an opening and formed on a surface portion of the silicon substrate where the plurality of switching transistors formed, and a plurality of capacitors for accumulating electric charge formed on the insulating layer and connected respectively to the switching transistors via a conductive film buried in the opening of insulating layer, wherein each of the capacitors for accumulating electric charge is provided with an underlying crystal layer formed on the insulating layer and with a dielectric film consisting essentially of a ferroelectric material and epitaxially or orientationaly grown on the underlying crystal layer, and the switching transistors and the capacitors for accumulating electric charge connected to each other constitute a plurality of memory cells arranged in a two-dimensional pattern.

摘要翻译： 一种半导体存储器件，包括硅衬底，形成在硅衬底上的多个开关晶体管，具有开口并形成在形成有多个开关晶体管的硅衬底的表面部分上的绝缘层，以及多个用于 累积形成在绝缘层上的电荷，并且经由埋在绝缘层开口中的导电膜分别连接到开关晶体管，其中用于积累电荷的每个电容器设置有形成在绝缘层上的下面的晶体层， 基本上由铁电材料构成并在下面的晶体层上生长的外延或取向的电介质膜，并且用于积累彼此连接的电荷的开关晶体管和电容器构成以二维图案布置的多个存储单元。

公开(公告)号：US5691219A

公开(公告)日：1997-11-25

申请号：US527581

申请日：1995-09-13

申请人： Takashi Kawakubo ,  Kazuhiro Eguchi ,  Shuichi Komatsu ,  Kazuhide Abe

发明人： Takashi Kawakubo ,  Kazuhiro Eguchi ,  Shuichi Komatsu ,  Kazuhide Abe

IPC分类号： H01L21/02 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/70

CPC分类号： H01L28/55 ,  H01L27/10808 ,  H01L28/91 ,  H01L27/10852 ,  Y10S148/014

摘要： A semiconductor memory device having a semiconductor substrate, an insulating layer provided on the substrate, and a memory cell. The memory cell has a switching transistor provided on the substrate and a charge storage element in a trench made in the insulating layer. The charge storage element has a bottom electrode, a dielectric layer and a top electrode deposited one on another in the order mentioned.

摘要翻译： 具有半导体衬底，设置在衬底上的绝缘层和存储单元的半导体存储器件。 存储单元具有设置在基板上的开关晶体管和在绝缘层中形成的沟槽中的电荷存储元件。 电荷存储元件具有下列顺序的底电极，电介质层和顶电极。