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    Ferroelectric type semiconductor device having a barium titanate type dielectric film and method for manufacturing the same
    1.
    发明授权
    Ferroelectric type semiconductor device having a barium titanate type dielectric film and method for manufacturing the same 失效
    具有钛酸钡型电介质膜的铁电型半导体器件及其制造方法

    公开(公告)号：US5739563A

    公开(公告)日：1998-04-14

    申请号：US559945

    申请日：1995-11-17

    申请人： Takashi Kawakubo ,  Kenya Sano ,  Kazuhide Abe ,  Shuichi Komatsu ,  Noburu Fukushima ,  Kazuhiro Eguchi

    发明人： Takashi Kawakubo ,  Kenya Sano ,  Kazuhide Abe ,  Shuichi Komatsu ,  Noburu Fukushima ,  Kazuhiro Eguchi

    IPC分类号： H01L21/02 ,  H01L21/8246 ,  H01L27/115 ,  H01L29/94 ,  H01L27/108

    CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

    摘要： A semiconductor memory device comprising a silicon substrate, a plurality of switching transistors formed on the silicon substrate, an insulating layer having an opening and formed on a surface portion of the silicon substrate where the plurality of switching transistors formed, and a plurality of capacitors for accumulating electric charge formed on the insulating layer and connected respectively to the switching transistors via a conductive film buried in the opening of insulating layer, wherein each of the capacitors for accumulating electric charge is provided with an underlying crystal layer formed on the insulating layer and with a dielectric film consisting essentially of a ferroelectric material and epitaxially or orientationaly grown on the underlying crystal layer, and the switching transistors and the capacitors for accumulating electric charge connected to each other constitute a plurality of memory cells arranged in a two-dimensional pattern.

    摘要翻译： 一种半导体存储器件，包括硅衬底，形成在硅衬底上的多个开关晶体管，具有开口并形成在形成有多个开关晶体管的硅衬底的表面部分上的绝缘层，以及多个用于 累积形成在绝缘层上的电荷，并且经由埋在绝缘层开口中的导电膜分别连接到开关晶体管，其中用于积累电荷的每个电容器设置有形成在绝缘层上的下面的晶体层， 基本上由铁电材料构成并在下面的晶体层上生长的外延或取向的电介质膜，并且用于积累彼此连接的电荷的开关晶体管和电容器构成以二维图案布置的多个存储单元。

    Thin film capacitor
    2.
    发明授权
    Thin film capacitor 失效
    薄膜电容器

    公开(公告)号：US5889299A

    公开(公告)日：1999-03-30

    申请号：US804394

    申请日：1997-02-21

    申请人： Kazuhide Abe ,  Shuichi Komatsu ,  Mitsuaki Izuha ,  Noburu Fukushima ,  Kenya Sano ,  Takashi Kawakubo

    发明人： Kazuhide Abe ,  Shuichi Komatsu ,  Mitsuaki Izuha ,  Noburu Fukushima ,  Kenya Sano ,  Takashi Kawakubo

    IPC分类号： H01L21/02 ,  H01L29/76

    CPC分类号： H01L28/55

    摘要： A thin film capacitor including a first electrode having on its surface a (100) face of cubic system or a (001) face of tetragonal system, a dielectric thin film epitaxially grown on the first electrode and exhibiting a crystal structure which inherently belongs to a perovskite structure of cubic system, and a second electrode formed on the dielectric thin film. Further, the dielectric thin film meets the following relationship V/V.sub.0 .gtoreq.1.01 where a unit lattice volume of true perovskite crystal structure belonging to the cubic system (lattice constant a.sub.0) is represented by V.sub.0 =a.sub.0.sup.3, and a unit lattice volume (lattice constant a=b.noteq.c) which is strained toward a tetragonal system after the epitaxial growth is represented by V=a.sup.2 c, and also meets the following relationship c/a.gtoreq.1.01 where c/a represents a ratio between a lattice constant "c" in the direction thicknesswise of the film and a lattice constant "a" in the direction parallel with a plane of the film.

    摘要翻译： 一种薄膜电容器，包括在其表面上具有立方体系的（100）面或四方晶系的（001）面的第一电极，在第一电极上外延生长并呈现出固有地属于 立方体的钙钛矿结构，以及形成在电介质薄膜上的第二电极。 此外，电介质薄膜满足以下关系V / V0 / = 1.01，其中属于立方体系的真实钙钛矿晶体结构的单位晶格体积（晶格常数a0）由V0 = a03表示，单位晶格体积 晶格常数a = b NOTEQUAL c），其外延生长后由V = a2c表示为四方晶系，并满足以下关系c / a> / = 1.01其中c / a表示晶格常数 在膜的厚度方向上的“c”和与膜的平面平行的方向上的晶格常数“a”。

    Thin film piezoelectric actuator
    4.
    发明授权
    Thin film piezoelectric actuator 失效
    薄膜压电致动器

    公开(公告)号：US07675222B2

    公开(公告)日：2010-03-09

    申请号：US11781667

    申请日：2007-07-23

    申请人： Takashi Kawakubo ,  Ryoichi Ohara ,  Tomio Ono ,  Toshihiko Nagano ,  Michihiko Nishigaki ,  Takaaki Yasumoto ,  Kazuhide Abe ,  Kenya Sano

    发明人： Takashi Kawakubo ,  Ryoichi Ohara ,  Tomio Ono ,  Toshihiko Nagano ,  Michihiko Nishigaki ,  Takaaki Yasumoto ,  Kazuhide Abe ,  Kenya Sano

    IPC分类号： H01L41/08

    CPC分类号： H01G7/06 ,  H01H2057/006 ,  H01L41/0933 ,  H01L41/094

    摘要： A thin film piezoelectric actuator comprises a driving part at least one end of which is supported by an anchor portion. The driving part includes: a piezoelectric film, a first lower electrode provided under a first region of the piezoelectric film, a second lower electrode provided under a second region different from the first region of the piezoelectric film, a first upper electrode provided opposite to the first lower electrode on the piezoelectric film, a second upper electrode provided opposite to the second lower electrode on the piezoelectric film, a first connection part that electrically connects the first lower electrode and the second upper electrode via a first via hole formed in the piezoelectric film, and a second connection part that electrically connects the second lower electrode and the first upper electrode via a second via hole formed in the piezoelectric film.

    摘要翻译： 薄膜压电致动器包括驱动部件，其至少一端由锚固部分支撑。 驱动部包括：压电膜，设置在压电膜的第一区域下方的第一下电极，设置在与压电膜的第一区不同的第二区域下方的第二下电极，与第一下电极相对设置的第一上电极 压电膜上的第一下电极，与压电膜上的第二下电极相对设置的第二上电极，经由形成在压电膜中的第一通孔电连接第一下电极和第二上电极的第一连接部 以及第二连接部，其经由形成在所述压电膜中的第二通路孔电连接所述第二下部电极和所述第一上部电极。

    Method for manufacturing an infrared detection element
    8.
    发明申请
    Method for manufacturing an infrared detection element 审中-公开
    红外线检测元件的制造方法

    公开(公告)号：US20050006584A1

    公开(公告)日：2005-01-13

    申请号：US10901110

    申请日：2004-07-29

    申请人： Takashi Kawakubo ,  Kazuhide Abe ,  Kenya Sano

    发明人： Takashi Kawakubo ,  Kazuhide Abe ,  Kenya Sano

    IPC分类号： G01J1/02 ,  G01J5/02 ,  G01J5/34 ,  H01L37/02 ,  G01J5/10 ,  H01L37/00

    CPC分类号： H01L37/02

    摘要： The present invention provides an infrared detection element having a single-crystalline base layer 3 with a thickness of 50 nm to 10 μm having a principal surface, a first electrode layer 4 formed on the principal surface of the single-crystalline base layer 3, a ferroelectric layer 5 which is formed on the first electrode layer 4 and is composed of a single-crystalline layer or a unidirectioally oriented layer. Distortion of the single-crystalline layer or a unidirectioally oriented layer in a surface parallel to the principal surface of the single-crystalline base layer 3 is elastically constrained by the single-crystalline base layer 3. The infrared detection element further has a second electrode layer 6 formed on the ferroelectric layer 5. An amount of charge is changed by changes in temperature caused by irradiation of infrared light to the ferroelectric layer 5. The amount of the charge is detected from the first and the second electrode layer4, 6. With the infrared detection element, an accurate temperature measurement is possible even in the neighborhood of the Curie temperature due to a discontinuous primary phase transition.

    摘要翻译： 本发明提供一种红外线检测元件，其具有厚度为50nm〜10μm的具有主面的单晶基底层3，形成在单晶基底层3的主面上的第一电极层4， 形成在第一电极层4上并由单晶层或单向取向层构成的铁电体层5。 在与单晶基底层3的主表面平行的表面中的单晶层或单向取向层的失真由单晶基底层3弹性约束。红外线检测元件还具有第二电极层 形成在铁电层5上的电荷量。由于红外光照射到铁电层5而引起的温度变化，电荷量被改变。从第一和第二电极层4,6检测电荷量。 红外线检测元件，由于不连续的初级相变，即使在居里温度附近也可进行精确的温度测量。