摘要:
A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; an inhibiting layer that is formed on the wafer and that inhibits crystal growth, the inhibiting layer including a covering region that covers a portion of the wafer and an open region that does not cover a portion of the wafer within the covering region; a Ge layer that is crystal-grown in the open region; and a functional layer that is crystal-grown on the Ge layer. The Ge layer may be formed by annealing with a temperature and duration that enables movement of crystal defects, and the annealing is repeated a plurality of times.
摘要:
Provided is an optical device including a base wafer containing silicon, a plurality of seed crystals disposed on the base wafer, and a plurality of Group 3-5 compound semiconductors lattice-matching or pseudo lattice-matching the plurality of seed crystals. At least one of the Group 3-5 compound semiconductors has a photoelectric semiconductor formed therein, the photoelectric semiconductor including a light emitting semiconductor that emits light in response to a driving current supplied thereto or a light receiving semiconductor that generates a photocurrent in response to light applied thereto, and at least one of the plurality of Group 3-5 compound semiconductors other than the Group 3-5 compound semiconductor having the photoelectric semiconductor has a heterojunction transistor formed therein.
摘要:
To improve the flatness of the surface and improve the reliability of a semiconductor device when expitaxially growing semiconductor crystal layers of different types on a single silicon wafer, provided is a semiconductor wafer which includes: a base wafer having a silicon crystal in the surface thereof, the silicon crystal having a first dent and a second dent; a first Group IVB semiconductor crystal located in the first dent and exposed; a second Group IVB semiconductor crystal located in the second dent; and a Group III-V compound semiconductor crystal located above the second Group IVB semiconductor crystal in the second dent and exposed.
摘要:
A digital camera includes: a mirror box that defines a space in which a light flux from a photographic lens is guided to an imaging unit; a mirror unit that is arranged inside the mirror box and is configured to rotate between a viewing position in which the mirror unit is inserted in a photographic light path from the photographic lens to the imaging unit to reflect the light flux and a photographing position in which the mirror unit is retracted from the photographic light path; and an opening section that discharges from the mirror box air that is moved when the mirror unit is rotated.
摘要:
A foam sheet produced from a foamable composition containing an acid generator that generates acid or a base generator that generates base due to the action of an active energy beam, and containing a compound having decomposing foamable functional group that decomposes and eliminates at least one type of low boiling point volatile substance by reacting with acid or base, makes it possible to obtain a microcellular thin foam that was considered to be difficult to produce thus far, thereby greatly expanding the range of fields in which foams can be used and significantly contributing to industry.
摘要:
A digital camera includes: a mirror box that defines a space in which a light flux from a photographic lens is guided to an imaging unit; a mirror unit that is arranged inside the mirror box and is configured to rotate between a viewing position in which the mirror unit is inserted in a photographic light path from the photographic lens to the imaging unit to reflect the light flux and a photographing position in which the mirror unit is retracted from the photographic light path; and an opening section that discharges from the mirror box air that is moved when the mirror unit is rotated.
摘要:
A foam production method including an irradiating step in which an active energy beam is irradiated onto a foamable composition containing an acid generating agent, which generates an acid, or a base generating agent, which generates a base, due to an action of an active energy beam, and containing a compound which has a decomposable/foamable functional group, which decomposes and eliminates one or more kinds of volatile substances with a low boiling point by reacting with the acid or base; and a subsequent foaming step in which the foamable composition is foamed under controlled pressure in a temperature region where the volatile substances with a low boiling point are decomposed and being eliminated.
摘要:
In a method of determining the quality of a semiconductor epitaxial crystal wafer having a buffer structure portion comprised of epitaxial layers the semiconductor epitaxial crystal wafer (S) is irradiated with pulsed exciting light (5A) to modulate an internal electric field of the buffer structure portion, the electric transport properties deriving from the crystal quality of the buffer structure of the semiconductor epitaxial crystal wafer (S) are predicted based on a spectral difference in reflectance in reflection probe light (3B) from the semiconductor epitaxial crystal wafer (S), to determine the crystal quality of the buffer structure portion. The crystal quality may also be determined based on electric field strength calculated from Franz-Keldysh oscillation originating in the semiconductor chemical compound of the buffer structure portion.
摘要:
The present invention discloses a foam sheet and its production process comprising the formation of a plurality of independent cells and/or a plurality of continuous cells. The foam sheet is produced from a foamable composition that contains an acid generator that generates an acid or a base generator that generates a base due to the action of an active energy beam and a compound that has a decomposing foarmable functional group that decomposes and eliminates one or more types of low boiling point volatile substances by reacting with the acid or base.
摘要:
A sensor includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat, where the photothermal absorber outputs an electric signal in response to incident light to be introduced into the photothermal absorber or heat to be applied to the photothermal absorber. A semiconductor wafer includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat.