公开(公告)号：US10756027B1

公开(公告)日：2020-08-25

申请号：US16371077

申请日：2019-03-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhibiao Zhou

IPC: H01L21/00 ,  H01L29/82 ,  H01L23/552 ,  H01L27/06 ,  H01L27/12 ,  H01L23/66 ,  H01L21/822 ,  H01L27/02 ,  H01L21/84 ,  H01L27/148

Abstract: A semiconductor structure is provided, the semiconductor structure includes a front oxide layer on a backside oxide layer, a front electronic component in the front oxide layer, a backside electronic component in the backside oxide layer, and a shield structure disposed between the front oxide layer and the backside oxide layer, the shield structure includes a patterned buried metal layer, two front contact structures disposed on a front surface of the patterned buried metal layer, and two back contact structures disposed on a backside of the patterned buried metal layer.

公开(公告)号：US10354711B2

公开(公告)日：2019-07-16

申请号：US15691729

申请日：2017-08-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yuanli Ding ,  Zhibiao Zhou

IPC: G11C11/22 ,  H01L29/786 ,  H01L29/49

Abstract: A dual mode memory system is provided in the present invention, which includes a memory cell array with a plurality of oxide-semiconductor field effect transistors, each said oxide-semiconductor field effect transistor has a ferroelectric layer in the bottom gate to modulate the bottom gate bias voltage according to the polarization voltages provided by the dual mode control unit.

公开(公告)号：US10313611B2

公开(公告)日：2019-06-04

申请号：US15613147

申请日：2017-06-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhibiao Zhou

IPC: H04N5/347 ,  H04N5/232 ,  H04N5/369 ,  H04N5/378

Abstract: An image sensor includes a first pixel and a second pixel. The first pixel receives a first signal sensed by a first photodiode. The second pixel receives a second signal sensed by a second photodiode. A pixel binning device includes a first transistor, a second transistor and a binning circuit, wherein the first transistor switchably couples to the first pixel to transfer the first signal, the second transistor switchably couples to the second pixel to transfer the second signal, and the binning circuit couples to the first transistor and the second transistor to bin the first signal and the second signal.

公开(公告)号：US10043917B2

公开(公告)日：2018-08-07

申请号：US15059311

申请日：2016-03-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhibiao Zhou ,  Shao-Hui Wu ,  Chen-Bin Lin ,  Ding-Lung Chen ,  Chi-Fa Ku

IPC: H01L21/00 ,  H01L29/786 ,  H01L29/66 ,  H01L21/426

Abstract: An oxide semiconductor device and a method for manufacturing the same are provided in the present invention. The oxide semiconductor device includes a back gate, an oxide semiconductor film, a pair of source and drain electrodes, agate insulating film, a gate electrode on the oxide semiconductor film with the gate insulating film therebetween, an insulating layer covering only over the gate electrode and the pair of source and drain electrodes, and a top blocking film over the insulating layer.

公开(公告)号：US09749567B2

公开(公告)日：2017-08-29

申请号：US14953411

申请日：2015-11-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhibiao Zhou ,  Chen-Bin Lin ,  Ding-Lung Chen

IPC: H04N5/374 ,  H01L31/0352 ,  H01L27/146 ,  H04N9/04

CPC classification number: H04N5/374 ,  H01L27/14667 ,  H01L31/035218 ,  H04N5/3745 ,  H04N9/04

Abstract: An operating method of an image sensor includes the following steps. The image sensor includes at least one pixel unit. The pixel unit includes a photoelectric conversion unit, a first control unit, a capacitor unit, and a sensing unit. The photoelectric conversion unit includes a quantum film photoelectric conversion unit, and the first control unit includes an oxide semiconductor transistor. The capacitor unit is coupled to the first control unit, and the sensing unit is configured to sense signals at a sense point coupled between the first control unit and the sensing unit. The pixel unit is discharged before a readout operation. The capacitor unit is charged by electrons emitted from the photoelectric conversion unit when the photoelectric conversion unit is excited by light. Signals at the sense point are then sensed by the sensing unit.

公开(公告)号：US09627547B2

公开(公告)日：2017-04-18

申请号：US14724799

申请日：2015-05-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhibiao Zhou ,  Shao-Hui Wu ,  Chi-Fa Ku

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L27/1218 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/0649 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/4916 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78603

Abstract: A semiconductor structure includes a substrate and a first element disposed in the substrate and arranged along a first direction. The first element is made of a semiconductor oxide material. The semiconductor structure also includes a dielectric layer disposed on the first element, and a second element, disposed on the dielectric layer and arranged along the first direction. The second element is used as a gate of a transistor structure.

公开(公告)号：US09431441B1

公开(公告)日：2016-08-30

申请号：US14834452

申请日：2015-08-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhibiao Zhou ,  Shao-Hui Wu ,  Chi-Fa Ku ,  Chen-Bin Lin ,  Chun-Yuan Wu ,  Chia-Fu Hsu

IPC: H01L29/10 ,  H01L27/146 ,  H01L29/786

CPC classification number: H01L27/14612 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L29/7869

Abstract: A back side illumination image sensor pixel structure includes a substrate having a front side and a back side opposite to the front side, a sensing device formed in the substrate to receive an incident light through the back side of the substrate, two oxide-semiconductor field effect transistor (OS FET) devices formed on the front side of the substrate, and a capacitor formed on the front side of the substrate. The two OS FET devices are directly stacked on the sensing device and the capacitor is directly stacked on the OS FET devices. The two OS FET devices overlap the sensing device, and the capacitor overlaps both of the OS FET devices and the sensing device.

Abstract translation: 背面照明图像传感器像素结构包括具有与前侧相反的前侧和后侧的基板，形成在基板中以接收穿过基板的背面的入射光的感测装置，两个氧化物半导体场 形成在基板的前侧的效应晶体管（OS FET）器件，以及形成在基板的前侧的电容器。 两个OS FET器件直接堆叠在感测器件上，电容器直接堆叠在OS FET器件上。 两个OS FET器件与感测器件重叠，并且电容器与OS FET器件和感测器件重叠。

公开(公告)号：US20240170490A1

公开(公告)日：2024-05-23

申请号：US18424888

申请日：2024-01-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： BO TAO ,  Li Wang ,  Ching-Yang Wen ,  Purakh Raj Verma ,  Zhibiao Zhou ,  Dong Yin ,  Gang Ren ,  Jian Xie

IPC: H01L27/12 ,  G11C17/16 ,  H01L23/525 ,  H10B20/20 ,  H10B20/25

CPC classification number: H01L27/1207 ,  G11C17/16 ,  G11C17/165 ,  H01L23/5252 ,  H10B20/20 ,  H10B20/25

Abstract: A semiconductor structure includes a semiconductor on insulator (SOI) substrate, a first electrically conductive structure, and a second electrically conductive structure. The SOI substrate includes a base substrate, a buried insulation layer disposed on the base substrate, a semiconductor layer disposed on the buried insulation layer, and a trap rich layer disposed between the buried insulation layer and the base substrate. At least a part of the first electrically conductive structure and at least a part of the second electrically conductive structure are disposed in the trap rich layer. A part of the trap rich layer is disposed between the first electrically conductive structure and the second electrically conductive structure. The first electrically conductive structure, the second electrically conductive structure, and the trap rich layer disposed between the first electrically conductive structure and the second electrically conductive structure are at least a portion of an anti-fuse structure.

公开(公告)号：US11774766B2

公开(公告)日：2023-10-03

申请号：US18082553

申请日：2022-12-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhibiao Zhou

IPC: G02B27/01 ,  H01L25/075 ,  H01L33/62

CPC classification number: G02B27/0172 ,  H01L25/0753 ,  H01L33/62 ,  G02B2027/0178

Abstract: A layout of Micro LED for augmented reality (AR) and mixed reality (MR) is provided in the present invention, including multiple display cells arranging into a cell array, multiple micro LEDs set on the edge region of each display cell and exposing the transparent region surrounded by the edge region, and pixel driver circuits set on the edge region right under the Micro LEDs.

公开(公告)号：US10410708B1

公开(公告)日：2019-09-10

申请号：US16424485

申请日：2019-05-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yuanli Ding ,  Zhibiao Zhou

IPC: G11C11/22 ,  H01L29/786 ,  H01L29/49

Abstract: A dual mode memory system is provided in the present invention, which includes a memory cell array with a plurality of oxide-semiconductor field effect transistors, each said oxide-semiconductor field effect transistor has a ferroelectric layer in the bottom gate to modulate the bottom gate bias voltage according to the polarization voltages provided by the dual mode control unit.