公开(公告)号：US20120012906A1

公开(公告)日：2012-01-19

申请号：US13126722

申请日：2010-12-31

申请人： Jing Wang ,  Jun Xu ,  Lei Guo

发明人： Jing Wang ,  Jun Xu ,  Lei Guo

IPC分类号： H01L29/772 ,  H01L21/336

CPC分类号： H01L29/665 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/778 ,  H01L29/7833

摘要： A Si—Ge—Si semiconductor structure having double compositionally-graded hetero-structures is provided, comprising: a substrate; a buffer layer or an insulation layer formed on the substrate; a strained SiGe layer formed on the buffer layer or the insulation layer, wherein a Ge content in a central portion of the strained SiGe layer is higher than the Ge content in an upper surface or in a lower surface of the strained SiGe layer, and the Ge content presents a compositionally-graded distribution from the central portion to the upper surface and to the lower surface respectively. According to the present disclosure, a compositionally-graded hetero-structure replaces an abrupt hetero-structure so as to form a triangular hole carrier potential well, so that most of hole carriers may be distributed in the strained SiGe layer with high Ge content and a reduction of the carrier mobility caused by interface scattering may be avoided, thus further improving a performance of a device.

摘要翻译： 提供了具有双组分梯度异质结构的Si-Ge-Si半导体结构，包括：基板; 形成在基板上的缓冲层或绝缘层; 形成在缓冲层或绝缘层上的应变SiGe层，其中应变SiGe层的中心部分的Ge含量高于应变SiGe层的上表面或下表面中的Ge含量， Ge含量呈现出从中心部分到上表面和下表面的成分分级分布。 根据本公开，组成渐变异质结构取代了突变异质结构以便形成三角形空穴载流子阱，使得大多数空穴载流子可以分布在具有高Ge含量的应变SiGe层中，并且 可以避免由界面散射引起的载流子迁移率的降低，从而进一步提高器件的性能。

公开(公告)号：US20110208749A1

公开(公告)日：2011-08-25

申请号：US12710119

申请日：2010-02-22

申请人： Lei Guo ,  Yihong Zhao

发明人： Lei Guo ,  Yihong Zhao

IPC分类号： G06F17/30

CPC分类号： G06Q50/01 ,  G06Q30/02

摘要： One particular embodiment accesses a plurality of user profiles corresponding to a plurality of users and a plurality of content objects; ranks the users in descending order based on a number of content objects each of the users has contributed to the social network; represents in log space ranks of the users versus in log space numbers of content objects contributed by the users; determines a threshold rank based on an increasing rate of the ranks of the users, a decreasing rate of the numbers of content objects, and a predetermined value in the log space; and identifies from among the users, those users ranked at and above the threshold rank as high-volume content contributors for the social network. The users belong to a social network; and each of the users has contributed at least one of the content objects to the social network.

摘要翻译： 一个特定实施例访问对应于多个用户和多个内容对象的多个用户简档; 基于每个用户对社交网络贡献的多个内容对象，以降序排列用户; 表示日志空间中的用户数与用户贡献的内容对象的日志空间数的比例; 基于用户的等级的增加率，内容对象的数量的减少率以及日志空间中的预定值来确定阈值等级; 并从用户中识别那些排在等级和高于阈值级别的用户作为社交网络的高容量内容贡献者。 用户属于社交网络; 并且每个用户已经将至少一个内容对象贡献给社交网络。

公开(公告)号：US11339372B2

公开(公告)日：2022-05-24

申请号：US16346762

申请日：2017-05-03

申请人： Cheng Li ,  Lei Guo ,  SCLNOW BIOTECHNOLOGY CO., LTD

发明人： Lei Guo

IPC分类号： C12N5/0775 ,  C12N5/071

摘要： Provided is a new type serum-free medium. The medium comprises: DMEM with high glucose (the content of glucose being 4.5 g/L), B27, recombinant human basic fibrolast growth factor (b-FGF), nicotinamide, N-2, vinblastine III (conophylline), non-essential amino acid (NEAA), heparin, epidermal growth factor (EGF), hepatocyte growth factor (HGF), a serum replacement (SR), an insulin-transferrin-selenium complex (ITS), and pentagastrin. Inducing differentiation of mesenchymal stem cells into insulin-secretion-like cells can be achieved in six days in one step using the medium.

公开(公告)号：US11273114B2

公开(公告)日：2022-03-15

申请号：US16473209

申请日：2017-05-03

申请人： Lei Guo ,  Cheng Li ,  SCLNOW BIOTECHNOLOGY CO., LTD

发明人： Lei Guo

IPC分类号： C12N5/0775 ,  C12N5/00 ,  A61K8/64 ,  A61Q19/08

摘要： A compound additive having a biological activation function. The compound additive contains water or phosphate buffer, and multiple proteins and various factors dissolved therein. The compound additive can be added into a culture medium for cell cultivation, and can also be directly used or added into a skin repair product or a cosmetic product so as to achieve certain skin repair and cosmetic effects.

公开(公告)号：US10386273B2

公开(公告)日：2019-08-20

申请号：US16129832

申请日：2018-09-13

申请人： Lei Guo

发明人： Lei Guo ,  Yanjun Liu ,  Shizhen Li

IPC分类号： G01N1/20 ,  C02F1/00 ,  B01D21/00 ,  B01D21/24 ,  G01N21/33 ,  G01N21/53 ,  B01D35/02 ,  C02F103/08

摘要： A 3D time series vector sediment trap includes a base disposed with trap pipes which includes water flow pipes and sedimentation pipes. The water flow pipes have a horizontal water inlet at the front end, a vertical downward water outlet at the back end and the water flow pipe is internally provided with a filter screen which tilts towards the water inlet. The filter screen is internally tangential to the water flow pipe, and the sedimentation pipes are vertically fixed underneath the water flow pipes. The top end of the sedimentation pipes have an opening and bottom end thereof is closed. The opening is connected to the water flow pipe and directly faces the filter screen so that materials with a diameter greater than the screen pore diameter are intercepted by the filter screen in the water flow pipe and collected in the sedimentation pipe.

公开(公告)号：US09015174B2

公开(公告)日：2015-04-21

申请号：US13329204

申请日：2011-12-16

申请人： Lei Duan ,  Will Chin ,  Seokkyung Chung ,  Lei Guo ,  Guenther Schmuelling

发明人： Lei Duan ,  Will Chin ,  Seokkyung Chung ,  Lei Guo ,  Guenther Schmuelling

IPC分类号： G06F17/30

CPC分类号： G06F17/30873

摘要： A plurality of web documents that include indicators corresponding to one or more selectable like objects may be obtained. A corresponding web domain associated with each of the plurality of obtained web documents may be determined. A domain total like object count of the indicators corresponding to the one or more selectable like objects may be determined for each one of the obtained plurality of web documents, for each determined corresponding web domain. A candidate group of the corresponding web domains may be determined based on a comparison of a predetermined first threshold value with one or more of the domain total like object counts. A likefarm domain confidence score may be determined for each one of a second group of the corresponding web domains based on a decision tree function that is based on a plurality of domain attributes.

摘要翻译： 可以获得包括对应于一个或多个可选择的相似对象的指示符的多个web文档。 可以确定与多个获得的web文档中的每一个相关联的对应web域。 对于每个确定的相应web域，可以针对所获得的多个web文档中的每一个确定与一个或多个可选择的相似对象相对应的指示符的对象计数的域总数。 可以基于预定的第一阈值与一个或多个域总共相似对象计数的比较来确定相应web域的候选组。 可以基于基于多个域属性的决策树函数来确定相应web域的第二组中的每一个的类似域域置信度得分。

公开(公告)号：US08842816B2

公开(公告)日：2014-09-23

申请号：US10537043

申请日：2002-12-03

申请人： Weiliang Lian ,  Aijun Li ,  Yimin Xi ,  Lei Guo

发明人： Weiliang Lian ,  Aijun Li ,  Yimin Xi ,  Lei Guo

IPC分类号： H04M7/00 ,  H04Q3/00 ,  H04L12/66

CPC分类号： H04Q3/0045 ,  H04L12/66 ,  H04Q3/0029

摘要： The present invention discloses a Softswitch and system for implementing the intelligent network in the next generation networks and a method for interconnecting the intelligent networks to the PSTN. The Softswitch comprises: a network adaptive device for implementing the communication between the Softswitch and other devices in said network, as well as receiving the call request; a call server for determining whether the call received by said network adaptive device is a common call or the call of the intelligent network and processing the common call; and an INAP adapter for responding the call of the intelligent network and encoding/decoding the INAP message.

摘要翻译： 本发明公开了一种用于在下一代网络中实现智能网的软交换机和系统，以及将智能网与PSTN互连的方法。 软交换机包括：网络自适应设备，用于实现软交换与所述网络中的其他设备之间的通信，以及接收呼叫请求; 呼叫服务器，用于确定由所述网络自适应设备接收的呼叫是公共呼叫还是智能网络的呼叫并处理公共呼叫; 以及用于响应智能网络的呼叫并对INAP消息进行编码/解码的INAP适配器。

公开(公告)号：US08785950B2

公开(公告)日：2014-07-22

申请号：US13823545

申请日：2012-11-09

申请人： Lei Guo

发明人： Lei Guo

IPC分类号： H01L33/00 ,  H04B10/00

CPC分类号： H04B10/00 ,  H01L31/125 ,  H01L31/173

摘要： A semiconductor electricity conversion structure is provided. The semiconductor electricity conversion structure includes: a substrate; and at least one semiconductor electricity conversion structure formed on the substrate, the at least one semiconductor electricity conversion structure including: at least one semiconductor electricity-to-light conversion unit for converting an input electric energy into a light energy, and at least one semiconductor light-to-electricity conversion unit for converting the light energy back into an output electric energy, in which a number of the semiconductor electricity-to-light conversion unit is in proportion to a number of the semiconductor light-to-electricity conversion unit to realize an electricity conversion, and an emitting spectrum of the semiconductor electricity-to-light conversion unit and an absorption spectrum of the semiconductor light-to-electricity conversion unit are matched with each other.

摘要翻译： 提供了一种半导体电转换结构。 半导体电转换结构包括：基板; 以及形成在所述基板上的至少一个半导体电转换结构，所述至少一个半导体电转换结构包括：用于将输入电能转换为光能的至少一个半导体电光转换单元，以及至少一个半导体 光电转换单元，用于将光能转换回输出电能，其中多个半导体电光转换单元与半导体光 - 电转换单元的数量成比例，至 实现电转换，并且半导体电光转换单元的发射光谱和半导体光 - 电转换单元的吸收光谱彼此匹配。

公开(公告)号：US20140145312A1

公开(公告)日：2014-05-29

申请号：US13816173

申请日：2012-12-18

申请人： Jing Wang ,  Renrong Liang ,  Lei Guo ,  Jun Xu

发明人： Jing Wang ,  Renrong Liang ,  Lei Guo ,  Jun Xu

IPC分类号： H01L29/02

CPC分类号： H01L29/02 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/28255 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/517 ,  H01L29/78

摘要： A semiconductor structure with a rare earth oxide is provided. The semiconductor structure comprises: a semiconductor substrate (100); and a plurality of insulation oxide layers (201, 202 . . . 20x) and a plurality of single crystal semiconductor layers (301, 302 . . . 30x) alternately stacked on the semiconductor substrate (100). A material of the insulation oxide layer (201) contacted with the semiconductor substrate (100) is any one of a rare earth oxide, SiO2, SiOxNy and a combination thereof, a material of other insulation oxide layers (202 . . . 20x) is a single crystal rare earth oxide.

摘要翻译： 提供了具有稀土氧化物的半导体结构。 半导体结构包括：半导体衬底（100）; 以及交替层叠在半导体基板（100）上的多个绝缘氧化物层（201,202,20.0x）和多个单晶半导体层（301,302,30 ...）。 与半导体衬底（100）接触的绝缘氧化物层（201）的材料是稀土氧化物，SiO 2，SiO x N y及其组合中的任一种，其它绝缘氧化物层（202.0×20×）的材料为 单晶稀土氧化物。

公开(公告)号：US20130320446A1

公开(公告)日：2013-12-05

申请号：US13576933

申请日：2012-07-18

申请人： Wei Wang ,  Jing Wang ,  Lei Guo

发明人： Wei Wang ,  Jing Wang ,  Lei Guo

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/02521 ,  H01L21/0237 ,  H01L21/02488 ,  H01L29/045 ,  H01L29/7849 ,  H01L29/78603

摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a semiconductor substrate; a rare earth oxide layer formed on the semiconductor substrate; a channel region formed on the rare earth oxide layer; and a source region and a drain region formed at both sides of the channel region respectively, in which a relationship between a lattice constant a of the rare earth oxide layer and a lattice constant b of a semiconductor material of the channel region and/or the source region and the drain region is a=(n±c)b, where n is an integer, c is a mismatch ratio of lattice constants, and 0

摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括：半导体衬底; 形成在半导体衬底上的稀土氧化物层; 形成在稀土氧化物层上的沟道区; 以及源极区域和漏极区域，分别形成在沟道区域的两侧，其中稀土氧化物层的晶格常数a与沟道区域的半导体材料的晶格常数b之间的关系和/或 源极区和漏极区是a =（n±c）b，其中n是整数，c是晶格常数的失配比，0