公开(公告)号：US08507965B2

公开(公告)日：2013-08-13

申请号：US12896231

申请日：2010-10-01

申请人： Kazutoshi Izumi ,  Hitoshi Saito ,  Naoya Sashida ,  Kaoru Saigoh ,  Kouichi Nagai

发明人： Kazutoshi Izumi ,  Hitoshi Saito ,  Naoya Sashida ,  Kaoru Saigoh ,  Kouichi Nagai

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L2924/19041

摘要： An insulation film (24) having a gradual inclination of a surface is formed by a high density plasma CVD method, an atmospheric pressure CVD method or the like, after a ferroelectric capacitor (23) is formed. Thereafter, an alumina film (25) is formed on the insulation film (24). According to the method, low coverage of the alumina film (25) does not become a problem, and the ferroelectric capacitor (23) is reliably protected.

公开(公告)号：US20110012230A1

公开(公告)日：2011-01-20

申请号：US12896231

申请日：2010-10-01

申请人： Kazutoshi Izumi ,  Hitoshi Saito ,  Naoya Sashida ,  Kaoru Saigoh ,  Kouichi Nagai

发明人： Kazutoshi Izumi ,  Hitoshi Saito ,  Naoya Sashida ,  Kaoru Saigoh ,  Kouichi Nagai

IPC分类号： H01L29/92

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L2924/19041

摘要： An insulation film (24) having a gradual inclination of a surface is formed by a high density plasma CVD method, an atmospheric pressure CVD method or the like, after a ferroelectric capacitor (23) is formed. Thereafter, an alumina film (25) is formed on the insulation film (24). According to the method, low coverage of the alumina film (25) does not become a problem, and the ferroelectric capacitor (23) is reliably protected.

摘要翻译： 在形成铁电电容器（23）之后，通过高密度等离子体CVD法，大气压CVD法等形成具有逐渐倾斜的表面的绝缘膜（24）。 此后，在绝缘膜（24）上形成氧化铝膜（25）。 根据该方法，氧化铝膜（25）的低覆盖率不成为问题，铁电电容器（23）被可靠地保护。

公开(公告)号：US07745232B2

公开(公告)日：2010-06-29

申请号：US12285748

申请日：2008-10-14

申请人： Naoya Sashida

发明人： Naoya Sashida

IPC分类号： H01L21/8239

CPC分类号： H01L21/7687 ,  H01L21/76877 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60

摘要： According to the present invention, contact plugs are formed by a CVD method without deteriorating the properties of the ferroelectric capacitor in a semiconductor device having a fine ferroelectric capacitor. Adhesive film is formed in a contact hole, which exposes an upper electrode of the ferroelectric capacitor after conducting heat treatment in an oxidizing atmosphere, and a W layer is deposited by the CVD method using such TiN adhesive film as a hydrogen barrier and the contact hole is filled.

摘要翻译： 根据本发明，通过CVD方法形成接触插塞，而不会劣化具有精细铁电电容器的半导体器件中的强电介质电容器的特性。 在接触孔中形成粘合膜，该接触孔在氧化气氛中进行热处理后露出强电介质电容器的上部电极，并且通过使用这种TiN粘合膜作为氢气阻挡层的CVD法沉积W层，并且接触孔 充满。

公开(公告)号：US07655531B2

公开(公告)日：2010-02-02

申请号：US12292980

申请日：2008-12-02

申请人： Naoya Sashida ,  Tatsuya Yokota

发明人： Naoya Sashida ,  Tatsuya Yokota

IPC分类号： H01L21/20

CPC分类号： H01L21/76834 ,  H01L21/7682 ,  H01L27/10811 ,  H01L27/10855 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/40

摘要： The semiconductor device comprises a capacitor formed over a semiconductor substrate 10 and including a lower electrode 32, a dielectric film 34 formed over the lower electrode and an upper electrode 36 formed over the dielectric film, a first insulation film 42 formed over the semiconductor substrate and the capacitor, a first interconnection 48 formed over the first insulation film and electrically connected to the capacitor, a first hydrogen diffusion preventive film 50 for preventing the diffusion of hydrogen formed over the first insulation film, covering the first interconnection, a second insulation film 58 formed over the first hydrogen diffusion preventive film and having the surface planarized, a third insulation film 62 formed over the second insulation film, a second interconnection 70b formed over the third insulation film, and a second hydrogen diffusion preventive film 72 for preventing the diffusion of hydrogen formed on the third insulation film, covering the second interconnection. Since the second hydrogen diffusion preventive film positioned above the capacitor is planarized, the dielectric film is surely prevented from being reduced with hydrogen.

摘要翻译： 半导体器件包括形成在半导体衬底10上的电容器，包括下电极32，形成在下电极上的电介质膜34和形成在电介质膜上的上电极36，形成在半导体衬底上的第一绝缘膜42和 电容器，形成在第一绝缘膜上并电连接到电容器的第一互连48，用于防止在第一绝缘膜上形成的覆盖第一互连的氢的扩散的第一防氢膜50，第二绝缘膜58 形成在第一氢扩散防止膜上并且具有表面平坦化，形成在第二绝缘膜上的第三绝缘膜62，形成在第三绝缘膜上的第二互连70b和用于防止扩散的第二防扩散膜72 形成在第三绝缘膜上的氢，覆盖第二绝缘膜 连接。 由于位于电容器上方的第二氢扩散防止膜被平坦化，所以可靠地防止电介质膜被氢还原。

公开(公告)号：US20090160023A1

公开(公告)日：2009-06-25

申请号：US12379488

申请日：2009-02-24

申请人： Kazutoshi Izumi ,  Hitoshi Saito ,  Naoya Sashida ,  Kaoru Saigoh ,  Kouichi Nagai

发明人： Kazutoshi Izumi ,  Hitoshi Saito ,  Naoya Sashida ,  Kaoru Saigoh ,  Kouichi Nagai

IPC分类号： H01L29/92 ,  H01L21/02 ,  H01L23/58 ,  H01L21/31

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L2924/19041

摘要： An insulation film (24) having a gradual inclination of a surface is formed by a high density plasma CVD method, an atmospheric pressure CVD method or the like, after a ferroelectric capacitor (23) is formed. Thereafter, an alumina film (25) is formed on the insulation film (24). According to the method, low coverage of the alumina film (25) does not become a problem, and the ferroelectric capacitor (23) is reliably protected.

公开(公告)号：US20090130815A1

公开(公告)日：2009-05-21

申请号：US12292980

申请日：2008-12-02

申请人： Naoya Sashida ,  Tatsuya Yokota

发明人： Naoya Sashida ,  Tatsuya Yokota

IPC分类号： H01L21/02

CPC分类号： H01L21/76834 ,  H01L21/7682 ,  H01L27/10811 ,  H01L27/10855 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/40

摘要： The semiconductor device comprises a capacitor formed over a semiconductor substrate 10 and including a lower electrode 32, a dielectric film 34 formed over the lower electrode and an upper electrode 36 formed over the dielectric film, a first insulation film 42 formed over the semiconductor substrate and the capacitor, a first interconnection 48 formed over the first insulation film and electrically connected to the capacitor, a first hydrogen diffusion preventive film 50 for preventing the diffusion of hydrogen formed over the first insulation film, covering the first interconnection, a second insulation film 58 formed over the first hydrogen diffusion preventive film and having the surface planarized, a third insulation film 62 formed over the second insulation film, a second interconnection 70b formed over the third insulation film, and a second hydrogen diffusion preventive film 72 for preventing the diffusion of hydrogen formed on the third insulation film, covering the second interconnection. Since the second hydrogen diffusion preventive film positioned above the capacitor is planarized, the dielectric film is surely prevented from being reduced with hydrogen.

公开(公告)号：US07518173B2

公开(公告)日：2009-04-14

申请号：US11129490

申请日：2005-05-16

申请人： Yukinobu Hikosaka ,  Mitsushi Fujiki ,  Kazutoshi Izumi ,  Naoya Sashida ,  Aki Dote

发明人： Yukinobu Hikosaka ,  Mitsushi Fujiki ,  Kazutoshi Izumi ,  Naoya Sashida ,  Aki Dote

IPC分类号： H01L29/41 ,  H01L29/43

CPC分类号： H01L27/11507 ,  H01L21/76816 ,  H01L21/76832 ,  H01L21/7687 ,  H01L27/11502 ,  H01L28/57

摘要： A semiconductor device includes: a semiconductor substrate; a MOS transistor formed in the semiconductor substrate and having an insulated gate and source/drain regions on both sides of the insulated gate; a ferroelectric capacitor formed above the semiconductor substrate and having a lower electrode, a ferroelectric layer and an upper electrode; a metal film formed on the upper electrode and having a thickness of a half of or thinner than a thickness of the upper electrode; an interlayer insulating film burying the ferroelectric capacitor and the metal film; a conductive plug formed through the interlayer insulating film, reaching the metal film and including a conductive glue film and a tungsten body; and an aluminum wiring formed on the interlayer insulating film and connected to the conductive plug. A new problem near an upper electrode contact is solved which may otherwise be caused by adopting a W plug over the F capacitor.

摘要翻译： 半导体器件包括：半导体衬底; 形成在所述半导体衬底中并且在所述绝缘栅极的两侧具有绝缘栅极和源极/漏极区域的MOS晶体管; 形成在半导体衬底上并具有下电极，铁电层和上电极的铁电电容器; 形成在上电极上并具有比上电极的厚度的一半或更薄的厚度的金属膜; 埋置铁电电容器和金属膜的层间绝缘膜; 通过层间绝缘膜形成的导电插塞，到达金属膜并且包括导电胶膜和钨体; 以及形成在层间绝缘膜上并连接到导电插塞的铝布线。 解决了上电极接触附近的新问题，否则可能是通过在F电容器上采用W插头引起的。

公开(公告)号：US20080142915A1

公开(公告)日：2008-06-19

申请号：US12037286

申请日：2008-02-26

申请人： Naoya Sashida

发明人： Naoya Sashida

IPC分类号： H01L43/00 ,  H01L29/82

CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L21/76895 ,  H01L27/11507 ,  H01L28/55

摘要： A ferroelectric memory device includes a field effect transistor formed over a semiconductor substrate and including first and second diffusion regions, an interlayer insulation film formed over the semiconductor substrate so as to cover the field effect transistor, a conductive plug formed in the interlayer insulation film in contact with the first diffusion region, and a ferroelectric capacitor formed over the interlayer insulation in contact with the conductive plug. The ferroelectric capacitor includes a ferroelectric film and upper and lower electrodes sandwiching the ferroelectric film respectively from above and below. The lower electrode is connected electrically to the conductive plug, and wherein a layer containing aluminum and oxygen is interposed between the conductive plug and the lower electrode, a layer containing nitrogen is interposed between the layer containing aluminum and oxygen and the lower electrode, and a self-aligned layer of a substance having a self-orientation is interposed between the layer containing nitrogen and the lower electrode.

摘要翻译： 铁电存储器件包括形成在半导体衬底上并包括第一和第二扩散区的场效应晶体管，形成在半导体衬底上以覆盖场效应晶体管的层间绝缘膜，形成在层间绝缘膜中的导电插塞 与第一扩散区接触，形成在与导电插塞接触的层间绝缘体上的铁电电容器。 铁电体电容器包括强电介质膜和分别从上下夹着铁电体膜的上下电极。 下电极与导电塞电连接，其中在导电插塞和下电极之间插入含有铝和氧的层，含有氮的层插入在包含铝和氧的层与下电极之间， 具有自取向的物质的自对准层插入在含氮层和下电极的层之间。

公开(公告)号：US20070045688A1

公开(公告)日：2007-03-01

申请号：US11315212

申请日：2005-12-23

申请人： Naoya Sashida

发明人： Naoya Sashida

IPC分类号： H01L29/94

CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

摘要： A ferroelectric memory device includes a field effect transistor formed on a semiconductor substrate, an interlayer insulation film formed on the semiconductor substrate so as to cover the field effect transistor, a conductive plug formed in the interlayer insulation film in contact with the first diffusion region, and a ferroelectric capacitor formed over the interlayer insulation in contact with the conductive plug, wherein the ferroelectric capacitor includes a ferroelectric film and upper and lower electrodes sandwiching the ferroelectric film respectively from above and below, the lower electrode being connected electrically to the conductive plug, a layer containing oxygen being interposed between the conductive plug and the lower electrode, a layer containing nitrogen being interposed between the layer containing oxygen and the lower electrode, a self-aligned layer being interposed between the layer containing nitrogen and the lower electrode.

摘要翻译： 铁电存储器件包括形成在半导体衬底上的场效应晶体管，形成在半导体衬底上以覆盖场效应晶体管的层间绝缘膜，形成在与第一扩散区接触的层间绝缘膜中的导电插塞， 以及形成在与所述导电插塞接触的所述层间绝缘体上的铁电电容器，其中，所述强电介质电容器包括强电介质膜和分别从上下夹着所述铁电体膜的上下电极，所述下电极与所述导电插塞电连接， 介于导电插塞和下电极之间的含有氧的层，包含氮的层包含在含氧层和下电极的层之间，自对准层插入在含氮层和下电极之间。

公开(公告)号：US07153735B2

公开(公告)日：2006-12-26

申请号：US11048752

申请日：2005-02-03

申请人： Naoya Sashida

发明人： Naoya Sashida

IPC分类号： H01L21/8242

CPC分类号： H01L21/022 ,  H01L21/02271 ,  H01L21/314 ,  H01L21/31612 ,  H01L21/31616 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/57 ,  H01L28/65

摘要： A method of manufacturing a semiconductor device comprises the steps of forming a first insulating film 9, 10 above a semiconductor substrate 1; forming a capacitor Q having a lower electrode 11a, a dielectric film 13a, and an upper electrode 14c on the first insulating film 9, 10; forming a second insulating film 15, 15a, 16 coating the capacitor Q; and forming a stress-controlling insulating film 30 on the rear surface of the semiconductor substrate 1 after the second insulating film 15, 15a, 16 have been formed.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体衬底1上形成第一绝缘膜9,10; 在第一绝缘膜9,10上形成具有下电极11a，电介质膜13a和上电极14c的电容器Q; 形成涂覆电容器Q的第二绝缘膜15,15a，16; 并且在形成第二绝缘膜15,15a，16之后，在半导体衬底1的后表面上形成应力控制绝缘膜30。